Abstract: A component includes a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength, in the vertical direction, the first transition zone is arranged between the first and second semiconductor bodies and is directly adjacent to the first and second semiconductor bodies, the first transition zone includes a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and the first transition zone includes a structured surface or a first partially transparent and partially wavelength-selectively

Abstract: An illumination dystem, an electronic Device and a method for using an illumination device are disclosed. In an embodiment an illumination device includes at least one semiconductor component configured to generate radiation, an optical element and a control circuit, wherein the optical element is configured to direct the radiation into a field of view to be illuminated, wherein the semiconductor component has a plurality of pixels of a first type, each pixel configured to illuminate the field of view in regions with radiation in a visible spectral range, and at least one infrared pixel configured to illuminate the field of view at least in regions with radiation in an infrared spectral range, wherein the pixels of the first type are arranged in a first matrix arrangement and the infrared pixels are arranged in a second matrix arrangement, and wherein the pixels of the first type and the at least one infrared pixel are operable via the control circuit.

Abstract: A method for producing optoelectronic semiconductor chips and an optoelectronic semiconductor chip are disclosed. In an embodiment a method includes growing a semiconductor layer sequence with an active, attaching a carrier substrate, depositing a sacrificial layer on an outer side of the carrier substrate and/or of the growth substrate, structuring the sacrificial layer so that singulation lanes are formed and dividing the carrier substrate and/or the growth substrate along the singulation lanes by a singulation stream including a laser radiation or a plasma, wherein the sacrificial layer adjacent to the singulation lanes is not transmissive to the singulation stream, and wherein the singulation stream is passed both through the singulation lanes and over the sacrificial layer.

Abstract: A semiconductor chip may have a radiation-permeable support, a semiconductor body, and a transparent current spreading layer. The semiconductor body may have an n-sided semiconductor layer, a p-sided semiconductor layer, and an optically active area therebetween. The semiconductor body may be secured to the support by means of a radiation permeable connection layer. The current spread layer may be based on zinc selenide and may be adjacent to the n-sided semi-conductor layer. A method for producing this type of semiconductor chip is also disclosed.

Abstract: In one embodiment, the optoelectronic semiconductor device comprises a carrier having electrical connection surfaces on a carrier upper side. At least four semiconductor chips are configured to emit light of different colors from each other. The semiconductor chips are mounted close to each other on the connection surfaces so that a distance between adjacent semiconductor chips is at most 100 ?m in a top view on the carrier upper side.

Abstract: A semiconductor device with at least one radiation emitting optical semiconductor chip, an integrated circuit, and exactly two connecting contacts. The semiconductor device has a variable radiation characteristic which is controlled as a function of a voltage signal both for data transmission and for supplying the semiconductor device which can be applied to the connecting contacts and varied over time.

Abstract: A method of producing an optoelectronic component includes providing an opto-electronic semiconductor chip including a layer sequence arranged on a substrate, wherein the layer sequence includes a contact side including two electrical contact locations, the contact side facing away from the substrate; arranging the optoelectronic semiconductor chip on an auxiliary carrier such that the contact side faces away from the auxiliary carrier; arranging a molding material above the auxiliary carrier such that a housing is formed that at least partly encloses the optoelectronic semiconductor chip, wherein the contact side is covered by the molding material; and detaching the housing from the auxiliary carrier.

Abstract: An apparatus for presenting an image for a heads-up display includes three arrays of light-emitting diodes, wherein the light-emitting diodes of an array are arranged and output electromagnetic beams in an emission direction of an emission side of the array, the light-emitting diodes output an electromagnetic beam with a first opening angle in the emission direction, a collimation apparatus provided on the emission side at a specified spacing in front of the array of the light-emitting diodes, wherein the collimation apparatus reduces the first opening angles of the beams of the light-emitting diodes downstream of the collimation apparatus in the emission direction to a second opening angle, the second opening angle is smaller than the first opening angle, and a combination optical unit arranged downstream of the collimation apparatus in the emission direction, the combination optical unit superposes the electromagnetic rays from the three arrays to form an image for the head-up display.

Abstract: In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. The device further includes a contact track electrically connecting the semiconductor chip to a contact surface configured to externally contact the semiconductor device, a molding and a rear side of the semiconductor chip remote from the radiation exit surface, the rear side being free of a material of the molding, wherein one of the side faces is configured as a mounting side face for fastening of the semiconductor device, and wherein the contact track partially runs on one of the side faces.

Abstract: A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes growing an n-conductive n-layer, growing an active zone for generating ultraviolet radiation, growing a p-conductive p-layer, producing a p-type semiconductor contact layer having a varying thickness and having a plurality of thickness maxima directly on the p-type layer and applying an ohmic-conductive electrode layer directly on the semiconductor contact layer, wherein each the n-layer and the active zone is based on AlGaN, the p-layer is based on AlGaN or InGaN and the semiconductor contact layer is a GaN layer, wherein the thickness maxima have an area concentration of at least 104 cm?2 in a top view, and wherein the p-layer is only partially covered by the semiconductor contact layer in the top view.

Abstract: An optoelectronic semiconductor chip may include a semiconductor layer sequence provided for generating and/or receiving radiation. The chip may further include a first trench structure and a second trench structure formed in the semiconductor layer sequence. A first contact finger structure may electrically conductively connect the second trench structure to a first semiconductor layer of the semiconductor layer sequence. The first contact finger structure may adjoin a first side surface and/or a second side surface of the second trench structure at least in places. A second contact finger structure may electrically conductively connect to a second semiconductor layer of the semiconductor layer sequence where the second contact finger may be arranged in the first trench structure.

Abstract: A method for manufacturing a plurality of surface mounted optoelectronic devices and a surface mounted optoelectronic device are disclosed. In an embodiment, a surface mounted optoelectronic device includes a transparent base body having a mounting rear side, a radiation exit side opposite the mounting rear side, and mounting side surfaces which are each disposed transversely to the radiation exit side, a semiconductor layer sequence disposed laterally to at least one mounting side surface and a terminal contact extending from the at least one mounting side surface to the mounting rear side, wherein the semiconductor layer sequence includes an active region configured to emit radiation so that the radiation decouples from the surface mounted optoelectronic device via the radiation exit side of the base body.

Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.

Abstract: A display device is disclosed. In an embodiment a display device includes a plurality of image points, each image point comprising at least one active region configured to generate first radiation, a carrier including a drive circuit for the plurality of image points and a detector assigned to at least some image points, the detector configured to receive second radiation, wherein at least some image points are configured to act either as an emitter or as a detector during operation of the display device.

Abstract: A method of selecting semiconductor chips includes: A) providing the semiconductor chips in a composite, B) producing a cohesive, mechanical first connection between the semiconductor chips and a carrier film, C) singulating the semiconductor chips, wherein the carrier film mechanically connects the semiconductor chips to one another after singulation, D) selectively weakening the first connection between some singulated semiconductor chips and the carrier film, depending on electro-optical and/or electrical properties of the semiconductor chips, and E) removing the semiconductor chips whose first connection is selectively weakened from the carrier film.

Abstract: A method produces cross-linked hole-conducting electric layers by converting functionalized p-dopants. The functionalized p-dopants are organic metal complexes containing at least one central atom and organic ligands, wherein the central atom is selected from a metal of the groups 6-15 of the periodic table, and at least one of the organic ligands is selected from the following formulas I-V, in which E independently of one another is oxygen, sulfur, selenium, or N(E1)x, and each Rv has at least one functionalizing group selected from the group RF including —OH, —COOH, —NH2, —NHR?, halogen, C2-C40-alkenyl, -dienyl, -alkinyl, -alkenyloxy, -dienyloxy, -alkinyloxy, acrylic acid, oxetan, oxiran, silane, acrylic acid, anhydride, and cyclobutane or consists of the groups, and G=C(RF)uHvFw where u+v+w=3 and n=1-4.

Abstract: The method of manufacturing a plurality of semiconductor chips (100) comprises a step A) of providing a semiconductor substrate (1) having a plurality of integrated electronic circuits (2) on a top side (10) thereof. In a step B), a sacrificial layer (3) is applied on one side of the semiconductor substrate. In a step C), holes (30) are introduced in the sacrificial layer so that at least one hole is formed above each electronic circuit. In a step D), the semiconductor substrate is adhered to a carrier (5) with the sacrificial layer at the front, an adhesive layer (4) being used between the sacrificial layer and the carrier, and the adhesive layer filling the holes so that holding elements (40) from the adhesive layer are formed in the holes. In a step E) the semiconductor substrate is thinned.

Abstract: A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

Abstract: A semiconductor light source includes at least one first emission unit, at least one second emission unit, and an optics, wherein the optical system has an inner region that converges radiation from the first emission unit, the optical system has an outer region that expands radiation from the second emission unit, a first light emission region of the inner region completely covers the first emission unit when viewed in plan view, and at least partially covers the second emission unit, a second light emission region of the outer region is partially or completely beside the second emission unit when viewed in plan view, and the inner region and the outer region have differently shaped light entry regions.

Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.