Abstract: A display device is disclosed. In an embodiment a device includes at least one optoelectronic semiconductor component configured to generate primary radiation, a plurality of pixels, wherein each pixel includes at least a first subpixel configured to generate radiation in a first spectral range and a second subpixel configured to generate radiation in a second spectral range different from the first spectral range, wherein the first and second subpixels are each assigned an active region of the semiconductor component; and a radiation conversion element arranged downstream of at least some of the active regions, wherein the radiation conversion element configured to at least partially convert the primary radiation into a secondary radiation and to radiate the secondary radiation at a narrow angle.

Abstract: A silicone composition includes a multiphase mixture of a low-refractive silicone having a refractive index n25D589 less than 1.45 and a high-refractive silicone having a refractive index n25D589 greater than 1.50, wherein a proportion of high-refractive silicone is 0.1 to 5.0 mass percent in relation to a total mass of high-refractive and low-refractive silicone, and the high-refractive silicone forms inclusions within the low-refractive silicone.

Abstract: A method of transferring semiconductor chips includes providing a transfer tool having a plurality of segments, each segment having a liquid receiving area; providing a plurality of semiconductor chips in a regular array on a source carrier; providing a target carrier; selectively arranging liquid drops on the liquid receiving areas of some of the segments; causing the transfer tool to approach the source carrier, each liquid drop contacting and wetting a semiconductor chip; lifting the transfer tool from the source carrier, wherein semiconductor chips wetted by liquid drops are lifted from the source carrier by the transfer tool; causing the target carrier by the transfer tool, to approach the semiconductor chips arranged on the transfer tool contacting the target carrier; and lifting the transfer tool from the target carrier, the semiconductor chips contacting the target carrier remaining on the target carrier

Abstract: An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including Alx1Iny1Ga1-x1-y1N with 0?x1<0.03, 0?y1?0.1 and x1+y1?1, and barrier layers including Alx2Iny2Ga1-x2-y2N with 0?x2?1, 0?y2?0.02 and x2+y2?1, wherein the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max?0.05, and a minimum value of the aluminium content in the barrier layers is x2,min<0.05.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation, a dielectric layer, a solder layer including a first metal arranged on the dielectric layer and a seed layer arranged between the solder layer and the dielectric layer, wherein the seed layer includes the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn.

Abstract: A light-emitting diode chip that includes an epitaxial semiconductor layer sequence having an active region that generates electromagnetic radiation during operation, and a passivation layer comprising magnesium oxide and magnesium nitride. The passivation layer may be applied to a lateral surface of the semiconductor layer sequence, and the passivation layer covering at least the active region.

Abstract: A component includes a light emitting semiconductor chip, wherein the semiconductor chip includes a layer arrangement including a plurality of layers, the p-conducting layer and the n-conducting layer adjoin one another in an active zone, a first electrical contact is configured on the p-conducting side of the layer arrangement at a first side of the semiconductor chip, a second electrical contact is configured on the n-conducting side of the layer arrangement at a second side of the semiconductor chip, the second side being situated opposite the first side of the semiconductor chip, the first side of the semiconductor chip transitions into the second side via an end side, the semiconductor chip is secured by the end side on a substrate, the substrate includes a first and second further electrical contact, and the further electrical contacts electrically conductively connect to the electrical contacts of the semiconductor chip.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active region arranged between first and second semiconductor layers; a first contact and a second contact for external electrical contacting of the semiconductor chip; first and second terminal layer regions, via which the first and second contacts electrically conductively connect to the first and second semiconductor layers; and a first insulation layer and a second insulation layer; wherein the first terminal layer region and the second terminal layer region are each arranged in some areas between the first insulation layer and the second insulation layer in a vertical direction perpendicular to a main extension plane of the active region; the first terminal layer region and the second terminal layer region are arranged side by side without overlapping; and the first terminal layer region extends in places up to a side surface of the semiconductor chip.

Abstract: A method of producing optoelectronic semiconductor components includes A) providing a chip carrier with electrical conductor structures on a carrier upper side, B) applying at least one semi-conductor chip configured to produce light on at least one of the electrical conductor structures, C) applying at least one sealing structure to at least one of the electrical conductor structures so that the sealing structure completely surrounds at least one contact area when viewed from the top, and D) producing a mold body directly at the at least one semiconductor chip and directly at the at least one sealing structure by transfer molding or injection molding, wherein, in an injection mold, the at least one sealing structure seals the at least one contact area against a material of the mold body so that the at least one contact area remains free of the mold body.

Abstract: A method of producing radiation-emitting semiconductor components includes arranging radiation-emitting semiconductor chips on a conversion layer; thickening the conversion layer next to and between the semiconductor chips by applying a filling compound containing phosphor, wherein the thickened conversion layer adjoins a front side and side faces of the semiconductor chips; forming a reflective layer on the conversion layer and on the semiconductor chips in a region of a rear side of the semiconductor chips, wherein a rear-side surface of the contacts of the semiconductor chips remains uncovered; and severing the reflective layer and the conversion layer to form singulated semiconductor components including a single semiconductor chip, a part of the conversion layer arranged on the front side and on the side faces of the semiconductor chip, and a part of the reflective layer arranged in the region of the rear side on the semiconductor chip and on the conversion layer.

Abstract: An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.

Abstract: An optoelectronic component includes a carrier, wherein the carrier includes a surface, reflective barriers are formed over the surface of the carrier, the reflective barriers divide the surface of the carrier into pixels, each pixel respectively includes at least one optoelectronic semiconductor chip arranged on the surface of the carrier, the optoelectronic semiconductor chip is configured to emit electromagnetic radiation, the optoelectronic semiconductor chip includes an upper side, the upper side faces away from the surface of the carrier, and a reflective covering is arranged on the upper side of the optoelectronic semiconductor chip.

Abstract: A method for producing an output coupling element and an output coupling element are disclosed. In an embodiment a method includes producing a suspension having quantum dots in a suspension medium, wherein each quantum dot comprises a core having a semiconductor material, directly applying the suspension onto a surface of an optoelectronic component and/or onto a surface of a carrier and removing the suspension medium for producing the output coupling element, wherein the output coupling element is matrix-free and transparent to radiation of a red range and/or a IR range.

Abstract: In an embodiment, a multi-chip module includes a first carrier including a mold material and at least two light-emitting diode chips embedded at least by side faces in the first carrier, wherein the light-emitting diode chips have first electrical contacts on a front side and second electrical contacts on a rear side, wherein the front side is configured as a radiation side, wherein the first electrical contacts are connected to control lines, wherein the control lines are arranged on a front side of the first carrier, wherein the second electrical contacts are connected to a collective line, and wherein the collective line is led to a rear side of the first carrier.

Abstract: A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes providing a light emitting diode chip with a growth substrate and with a semiconductor layer sequence for generating radiation, soldering chip contact surfaces located on a chip underside of the semiconductor layer sequence facing away from the growth substrate to carrier contact surfaces of a carrier, applying a liquid connector transparent to the radiation to a substrate upper side of the growth substrate facing away from the semiconductor layer sequence, fastening a fluorescent body to the substrate upper side, the connector being partially displaced by the fluorescent body from the substrate upper side so that chip side faces are predominantly covered by the connector and generating a reflector on outer faces of the connector facing away from the light emitting diode chip on the chip side faces, the outer faces pointing in a direction away from the carrier.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

Abstract: A method for producing an illumination device may include providing a plurality of optoelectronic semi-conductor components that each have a semi-conductor layer sequence for generating radiation where the semiconductor components each have at least one contact surface on one side and are held by a common carrier. The method may further include electroplating each contact surface of the semi-conductor components using a solder material, applying the semi-conductor components having the solder material to a substrate, and melting and soldering the contact surfaces onto the surfaces.

Abstract: A method of attaching a semiconductor chip on a lead frame includes A) providing a semiconductor chip, B) applying a solder metal layer sequence to the semiconductor chip, wherein the solder metal layer sequence includes a first metallic layer including indium or an indium-tin alloy, C) providing a lead frame, D) applying a metallization layer sequence to the lead frame, wherein the metallization layer sequence includes a fourth layer including indium and/or tin arranged above the lead frame and a third layer including gold arranged above the fourth layer, E) forming an intermetallic intermediate layer including gold and indium, gold and tin or gold, tin and indium, G) applying the semiconductor chip to the lead frame via the solder metal layer sequence and the intermetallic intermediate layer, and H) heating the arrangement produced in G) to attach the semiconductor chip to the lead frame.

Abstract: An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.

Abstract: A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1?0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2?0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3?0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.