Abstract: A method produces an optoelectronic lighting device. The device efficiently increases a decoupling of electromagnetic radiation from a volume emitter LED chip. This is achieved in that, a frame made of an optical material is provided on side surfaces of the volume emitter LED chip, wherein the frame has a curved section. Light decoupled via the side surfaces of the volume emitter LED chip is thereby coupled into the frame, and can be decoupled again via same or reflected, for example, on a reflective material applied to the frame.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor layer sequence comprising a plurality of pixels and an active layer, wherein the active layer is configured to emit a primary radiation in a blue region of an electromagnetic spectrum with a peak wavelength of between 420 nm inclusive and 480 nm inclusive, applying a first photoresist and a first converter material on the semiconductor layer sequence, exposing the first photoresist with radiation having the peak wavelength longer than the peak wavelength of the primary radiation, curing the first photoresist by polymerization in order to form a first converter layer comprising a matrix material and the first converter material and structuring the first converter layer.

Abstract: A 3D display element is disclosed. In an embodiment a 3D display element includes a light-emitting component configured to emit light and an optical arrangement, wherein the light-emitting component includes a plurality of triplets, each triplet including a first, a second and a third light-emitting region, wherein the triplets are arranged side by side in a first lateral plane, wherein the regions are arranged side by side in the first lateral plane, wherein the optical arrangement is configured to diverge light of adjacent triplets passing through the optical arrangement, and wherein light of a triplet passing through the optical arrangement is mixed.

Abstract: A method for manufacturing a radiation-emitting semiconductor device and radiation-emitting semiconductor device are disclosed. In an embodiment a method includes providing a radiation-emitting semiconductor chip having a first main surface including a radiation exit surface of the semiconductor chip, applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface, galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point, galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point, wherein a material of the first metallic layer and a material of the second metallic layer are different, and applying a casting compound between the contact points.

Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

Abstract: A component with an optoelectronic part is disclosed. In an embodiment a component includes a carrier, at least one optoelectronic part arranged on the carrier, the part configured to emit electromagnetic radiation, a frame arranged on the carrier and enclosing a part space, wherein the part is arranged in the part space, and wherein the frame comprises a reflector and a lens arranged on the frame and at least partially covering an opening of the part space, wherein the lens is configured to direct the electromagnetic radiation of the part, wherein the lens comprises at least a partial pyramidal shape on a first side face facing toward the part, wherein the partial pyramidal shape of the lens comprises lateral faces, wherein the lateral faces meet one another via edges, and wherein the reflector is configured to direct radiation of the part onto the lens.

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

Abstract: A cover for an optoelectronic component includes a body of a first material, the body includes a lower side and, starting from the lower side, a recess for the optoelectronic component, the body includes a side surface adjacent to the lower side, the recess is continued as far as the side surface, a plate of a second material is arranged on the side surface, the second material being transparent for a radiation wavelength of the optoelectronic component, and the body and the plate are connected.

Abstract: A light-emitting component a first layer stack configured to generate light, at least one additional layer stack configured to generate light, where each of the first layer stack and the at least one additional layer stack are separately drivable from one another and where an auxiliary structure is arranged between the first layer stacks and the at least one additional layer stacks.

Abstract: A method for producing optoelectronic semiconductor components is disclosed.

Abstract: An optoelectronic component and a lighting apparatus are disclosed. In an embodiment an optoelectronic component includes a carrier having an upper side and an underside opposite the upper side, an optoelectronic semiconductor chip arranged on the upper side of the carrier, the semiconductor chip configured to emit primary radiation during operation via one or more sides. The component further includes a first conversion layer having an inorganic phosphor on the semiconductor chip, the first conversion layer covering at least all radiation-emitting sides of the semiconductor chip not facing the carrier and a solid body in which an organic phosphor is distributed, wherein the solid body is arranged and fastened on the carrier and is at least in indirect contact with the carrier, and wherein the solid body is spaced from the radiation-emitting sides of the semiconductor chip at least by the first conversion layer and/or by the carrier.

Abstract: The invention relates to an optoelectronic component (100) having a semiconductor chip (2) for generating a primary radiation in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip and is designed to generate a secondary radiation from the primary radiation, wherein the conversion element (4) comprises at least one first phosphor (9) and a second phosphor (10), wherein the first phosphor (9) is Sr(Sr1?xCax)Si2Al2N6:Eu2+ and/or (Sr1?yCay)[LiAl3N4]:Eu2+, where 0?x?1 and 0?y?1, wherein a total radiation (G) exiting from the component (100) is white mixed light.

Abstract: An optoelectronic semiconductor component for the emission of multicolored radiation may have a multiplicity of active regions arranged next to one another. The active regions may be configured as microrods or nanorods and configured to generate primary electromagnetic radiation. A first group of the active regions may respectively be followed in an emission direction by a first luminescence conversion element, which is suitable for converting the primary radiation into first secondary radiation. A second group of the active regions is respectively followed in the emission direction by a second luminescence conversion element, which is suitable for converting the primary radiation into second secondary radiation. The primary radiation, the first secondary radiation, and the second secondary radiation having different colors.

Abstract: An LED filament is disclosed.

Abstract: A light emitting filament device comprising a carrier extending in a longitudinal direction and having a first main surface, a second main surface opposite to the first main surface, and two side surfaces interconnecting the two main surfaces. Optoelectronic components are disposed on the first main surface of the carrier. A first converter layer is arranged on the first main surface of the carrier and covers the optoelectronic components. A second converter layer is arranged on the second main surface of the carrier. The carrier is designed at at least one location along the longitudinal direction such that at least one of the two side surfaces includes an angle with the first main surface of greater than 90°. The carrier is trapezoidal in cross-section at the at least one location.

Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a heating device includes a heating plane configured to be arranged parallel to a plane of the semiconductor chips in the wafer composite and a first heating unit extending substantially in a radial direction with respect to a reference point in the heating plane, wherein the first heating unit includes a plurality of inductive heating elements arranged adjacent to each other in a substantially radial direction, each inductive heating element having a predetermined distance from the reference point, and wherein the inductive heating elements are formed as electromagnets or permanent magnets configured to generate eddy currents in a carrier of the wafer composite.

Abstract: An optical assembly and a display device are disclosed. In an embodiment an optical assembly includes a common carrier, a plurality of first chip groups, each first chip group comprising at least two similar luminescence diode chips, a plurality of second chip groups, each second chip group comprising at least two similar luminescence diode chips, wherein the first and second chip groups are arranged planar along a regular grid of first unit cells on a main surface of the common carrier and an optical element arranged downstream of the first and second chip groups with respect to a main radiation direction, wherein the luminescence diode chips of the different chip groups are configured to emit electromagnetic radiation of different wavelength characteristics.

Abstract: A headlamp includes a first semiconductor chip and a second semiconductor chip for generating light. The first and second semiconductor chips each include several pixels. A first optics is arranged to direct light from the first semiconductor chip with a first magnification into a base region. Via a second optics, light of the second semiconductor chip is directed into a bright region with a second magnification. The second magnification is between 0.3 times and 0.7 times the first magnification inclusive, so that the bright region is smaller than the base region. The bright region is within the base region.

Abstract: In an embodiment, an arrangement includes an optoelectronic device including a plurality of components configured to generate electromagnetic radiation, wherein the components are arranged in a grid having identical spacings and a scattering element for expanding a radiation region of the electromagnetic radiation of the device, the scattering element comprising a first layer having first linear structures, the first structures being arranged parallel to one another and a second layer having second linear structures, the second linear structures being aligned parallel to one another, wherein the first linear structures and the second linear structures are arranged at a predefined angle of between 1° and 179°, wherein the first linear structures and/or the second linear structures constitute wave peaks and wave valleys, wherein adjacent wave valleys and adjacent wave peaks constitute a periodic spacing, and wherein the periodic spacing deviates at most by 20% from a multiple of the periodic spacing of the comp

Abstract: An optoelectronic semiconductor component is specified which comprises a semiconductor layer sequence having a first and a second semiconductor layer of a first conductivity type, an active layer designed for generating electromagnetic radiation, a first electrical terminal layer and a second electrical terminal layer laterally spaced therefrom which electrically contacts the second semiconductor layer, and a first contact zone of a second conductivity type which adjoins the first electrical terminal layer and is electrically conductively connected to the first electrical terminal layer. And at least one functional region formed between the first and second terminal layers, in which a second contact zone of a second conductivity type and at least one shielding zone of a second conductivity type is formed. Furthermore, a method for producing the optoelectronic semiconductor component is specified.