Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed.

Abstract: A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element.

Abstract: An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.

Abstract: An optoelectronic semiconductor component may include at least one optoelectronic semiconductor chip, a reflector, a lens, and a connecting layer. The reflector may have a reflector recess where the semiconductor chip may be arranged. The lens may be fully located in the reflector recess, and the lens may have a lens recess. The connecting layer may fasten the lens on the reflector. The lens may have a lens outer side facing toward a reflector inner wall of the reflector recess. A gap may be between the reflector and the lens, and the gap may be filled only partially with the connecting layer. The semiconductor chip may not touch the lens. The optoelectronic semiconductor component may be incorporated into a biometric sensor.

Abstract: A radiation-emitting semiconductor arrangement includes at least one semiconductor body having an active region that generates a primary radiation, and includes a radiation conversion element, wherein the radiation conversion element converts the primary radiation at least partially into a secondary radiation during operation of the semiconductor arrangement, the radiation conversion element emits the secondary radiation at a narrow angle, the radiation conversion element emits the secondary radiation into a projected spatial angle of not more than ?/5, and the semiconductor arrangement includes an optical deflector movable during operation of the semiconductor arrangement.

Abstract: A dimmable light source for emitting white overall radiation may include a dimmer and a light-emitting diode. The dimmer may vary a current intensity of a current for operating the light-emitting diode during the operation of the light source. The LED may include a semiconductor layer sequence to emit primary radiation, and the LED may further include a conversion element configured to at least partially convert the primary radiation into secondary radiation having a first emission band with a first emission maximum ranging from 400 nm to 500 nm and a second emission band with a second emission maximum ranging from 510 nm to 700 nm. A relative intensity of the first emission band may reduce with decreasing current intensity of the current for operating the LED, and a relative intensity of the second emission band may increase with decreasing current intensity of the current for operating the LED.

Abstract: An optoelectronic component includes a light emitter including a multiplicity of segments, wherein each segment of the light emitter includes a multiplicity of image points configured to emit light, and an optical element configured to image light emitted by the light emitter into a target region, light emitted by the individual segments of the light emitter is superimposed in the target region, the optical element is subdivided into a number of segments corresponding to a number of segments of the light emitter, each segment of the optical element is respectively arranged over a segment of the light emitter, and the segments of the optical element are respectively configured as double-sided aspherical lenses.

Abstract: A light-emitting component a first layer stack configured to generate light, at least one additional layer stack configured to generate light, where each of the first layer stack and the at least one additional layer stack are separately drivable from one another and where an auxiliary structure is arranged between the first layer stacks and the at least one additional layer stacks.

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence having an active zone that generates radiation, a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence, and a second electrode that supplies current and extends from the bottom side to a top side of the semiconductor layer sequence opposite the bottom side, wherein the second electrode includes at least one current distribution structure on the top side, and the current distribution structure is impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions.

Abstract: A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.

Abstract: An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer.

Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.

Abstract: The invention relates to a method for classifying a light-emitting semiconductor component (301) for an image sensor application, wherein the semiconductor component (301) is designed as a light source for an image sensor (302), comprising the following steps: providing the light-emitting semiconductor component (301); determining at least one of the following parameters of the light emitted with an emission spectrum by the light-emitting semiconductor component (301) during operation: R=?qR(?)·S(?)d?·texp, G=?qG(?)·S(?)d?·texp, B=?qB(?)·S(?)d?·texp, wherein qR(?), qG(?), and qB(?) are spectral sensitivities of a red, green, and blue color channel of the image sensor (302), S(?) is the emission spectrum of the light-emitting semiconductor component (301), texp is an exposure time, and ? designates a wavelength; classifying the light-emitting semiconductor component (301) into a class from a group of classes, which are characterized by different value ranges of at least one parameter that depends on at least o

Abstract: An optoelectronic component, having an optoelectronic semiconductor chip, includes a substrate, wherein at least two light-emitting sections are arranged laterally next to one another over an upper side of the substrate, the light-emitting sections are separately controllable, the light-emitting sections generate electromagnetic radiation from different spectral ranges, the light-emitting sections are formed by a layer sequence, an active region is formed inside the layer sequence, trenches are formed between the light-emitting sections, and the trenches fully divide the active region so that the light-emitting sections are separated from one another.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material above the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; simultaneously spraying particles and a further material onto the cast surface, wherein a mixture of the further material and the particles includes a proportion of the particles of 20 percent by weight to 60 percent by weight, a portion of the particles remains at the cast surface, and a topography is created at the cast surface.

Abstract: A method of producing laser bars or semiconductor lasers includes providing a carrier composite to form a plurality of carriers for the laser bars or for the semiconductor lasers, providing a semiconductor body composite including a common substrate and a common semiconductor layer sequence grown thereon, forming a plurality of separation trenches through the common semiconductor layer sequence such that the semiconductor body composite is divided into a plurality of semiconductor bodies, applying the semiconductor body composite to the carrier composite such that the separation trenches face the carrier composite, thinning or removing the common substrate, and singulating the carrier composite into a plurality of carriers, wherein a plurality of semiconductor bodies are arranged on one of the carriers, and the semiconductor bodies arranged on one common carrier are laterally spaced apart from one another by the separation trenches.

Abstract: An optoelectronic circuit assembly has a first optoelectronic component and a second optoelectronic component, wherein the optoelectronic components each comprise a housing body with an upper face and a lower face, wherein in the housing body of each optoelectronic component, a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are embedded, wherein the optoelectronic components are mounted on a circuit board, wherein the first optoelectronic semiconductor chip of the first optoelectronic component and the first optoelectronic semiconductor chip of the second optoelectronic component are connected to a first conductor track in an electrically conductive manner, wherein the second optoelectronic semiconductor chip of the first optoelectronic component and the second optoelectronic semiconductor chip of the second optoelectronic component are connected to a second conductor track in an electrically conductive manner, wherein the first optoelectronic semiconductor chip or the

Abstract: An optoelectronic component may include four semiconductor chips arranged on a substrate. A first semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 610 to about 650 nm during operation. A second semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 450 to about 475 nm during operation. A third semiconductor chip may be configured to emit electromagnetic radiation with color space coordinates of 0.3231±0.005 and 0.5408±0.005 in the CIE color space during operation. A fourth semiconductor chip may emit electromagnetic radiation having color space coordinates of 0.5638±0.005 and 0.4113±0.005 in the CIE color space during operation. The third and fourth semiconductor chips may have a conversion layer configured to convert a wavelength of the electromagnetic radiation emitted by the active region.

Abstract: A 3D display element (2) comprising a plurality of emission regions (20) adapted to emit electromagnetic radiation (L), wherein at least some emission regions (20) are associated with a first group and at least some emission regions (20) are associated with a second group (21, 22), wherein by means of the emission regions (20) of the first group (21) respectively a pixel (100) of a first perspective (11) of an image (B) can be represented, and by means of the emission regions (20) of the second group (22) respectively a pixel (100) of a second perspective (12) of the image (B) can be represented the sum of all emission regions (20) is greater than the sum of all pixels (100) of all perspectives (11, 12).

Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a plurality of light-emitting diode chips arranged on a mounting surface of a carrier, a first translucent element and a second translucent element, wherein the first translucent element is arranged over the plurality of light-emitting diode chips as viewed from the mounting surface and the second translucent element is disposed on a side of the plurality of light-emitting diode chips opposite the first translucent element such that the light-emitting diode chips are arranged between the first and second translucent elements, wherein the first and second translucent elements are configured to emit light generated by the light-emitting diode chips during operation outwardly, and wherein the first and second translucent elements appear white or grey in daylight.