Abstract: A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: The semiconductor laser diode includes a semiconductor layer sequence having an active zone. The semiconductor layer sequence has a shape of a generalized cylinder or a frustum, and a main axis of the semiconductor layer sequence is perpendicular to a main extension plane of the semiconductor layer sequence. The semiconductor layer sequence has a core region and an edge region directly adjacent to the core region. The main axis passes through the core region. The edge region borders the core region in directions perpendicular to the main axis. The semiconductor layer sequence has a larger refractive index in the core region than in the edge region.

Abstract: A system and a method for operating a lighting device may include a transmission device and an optional communication unit. The transmission device may be configured to wirelessly transmit a radio signal with identification data specific to the transmission device of the lighting device via at least two radio channels. The transmitted radio signal transmitted via a respective one of the at least two channels may include channel data with respect to the respective one of the radio channels. In a non-limiting embodiment, the transmission device is a beacon.

Abstract: An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

Abstract: An optoelectronic arrangement is specified, including a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electr

Abstract: The present invention is directed to a wavelength converter comprising a non-luminescent substrate layer, at least one polysiloxane layer, wherein at least one of the polysiloxane layers comprises a phosphor material. Furthermore, the present invention is directed to a method for preparing a wavelength converter, a light emitting device and a method for preparing a light emitting device.

Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1?x*?y*?z*) Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

Abstract: In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 ?m and 200 ?m inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO3/2 units.

Abstract: A lighting assembly is provided with a housing defining a cavity that is aligned along a longitudinal axis. A light source is supported by the housing and aligned with the longitudinal axis. A lens is supported by the housing to collimate light from the light source. An image plate with a plurality of apertures formed through passes a portion of the collimated light as light segments. An exit lens includes a first series of optics arranged on a first plane spaced apart from the image plate at a first focal distance to focus the light segments at a first distance from the housing, and a second series of optics arranged on a second plane spaced apart from the image plate at a second focal distance to focus the light segments at a second distance from the housing. The second focal distance is greater than the first focal distance.

Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.

Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

Abstract: An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.

Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: A method for operating a sensor system may include predefining a spatial region to be detected in the surroundings of a light emission device, scanning the predefined spatial region by light beams emitted by the light emission device in different spatial directions, driving an emitter with a control unit based on a random component, emitting light beams from the emitter in the direction of a scanning unit at random points in time, and deflecting the light beams, using the scanning unit, in the different spatial directions along which the light beams leave the light emission device. The sensor system may include the control unit and the light emission device where the light emission device includes the emitter and the scanning unit.

Abstract: A multilayer encapsulation, a method for encapsulating and an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a first electrode layer, an organic light-emitting layer stack abutting the first electrode layer, a second electrode layer abutting the light-emitting layer stack and a multilayer encapsulation abutting the second electrode layer, wherein the multilayer encapsulation comprises a barrier layer and a planarization layer, wherein the planarization layer abuts the second electrode layer, and wherein the planarization layer is arranged between the second electrode layer and the barrier layer.

Abstract: A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.

Abstract: A method for operating a visual display apparatus is specified. The apparatus comprises a first optoelectronic semiconductor component configured to emit electromagnetic radiation of a first wavelength and comprising a first intrinsic switch-on delay. The apparatus comprises a second optoelectronic semiconductor component configured to emit electromagnetic radiation of a second wavelength and comprising a second intrinsic switch-on delay. The second wavelength is different from the first wavelength. The first semiconductor component is operated with a first operating current according to a first actuation signal. The second semiconductor component is operated with a second operating current according to a second actuation signal.