Abstract: In various embodiments, an arrangement is provided. The arrangement includes a light source for a light system; an adaptive mirror arrangement connected downstream of the light source via which adaptive mirror arrangement light that is emittable by the light source is directable, and a radiation source for a sensor system for capturing an environment. The radiation from the radiation source for the sensor system is directable via the adaptive mirror arrangement.

Abstract: A light-emitting semiconductor device (100) comprising a semiconductor layer sequence (1) based on a phosphide and/or arsenide compound semiconductor material system is specified, wherein—the semiconductor layer sequence (1) comprises a light-emitting semiconductor layer (10), which is embodied to emit light during operation of the semiconductor device (100), between a first cladding layer (11) and a second cladding layer (12), and at least a first semiconductor protection layer (13), the first semiconductor protection layer (13) is arranged inside the first cladding layer (11), wherein the first cladding layer is formed as an outer layer, or the first semiconductor protection layer is arranged as an outer layer directly on the first cladding layer (11) on a side remote from the light-emitting semiconductor layer (10), and the first semiconductor protection layer (13) has a lower aluminum content than the first cladding layer.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one optoelectronic semiconductor chip configured to emit radiation and an encapsulation around the semiconductor chip. The encapsulation is a polysiloxane. A barrier layer can be used for protection against harmful gases, the barrier layer being arranged on the encapsulation. The barrier layer is a plasma-polymerized siloxane layer.

Abstract: Light-emitting component includes a light source and a dimming element arranged downstream of the light source in a radiation direction. The dimming element includes a dimming layer. The light source includes at least one emitter which is configured to emit light. A brightness of a light emitted by the light-emitting component is adjustable. The brightness is partially adjustable by way of a pulse width modulated and/or amplitude modulated operating signal for the emitter, and the brightness is partially adjustable by way of partial absorption and/or reflection of the light emitted by the emitter in the dimming element. A dimming capability of the dimming layer increases along an extension direction transverse to the radiation direction. The dimming layer is displaceable along the extension direction relative to the light source. A degree of absorption and/or reflection of light emitted by the emitter is variably adjustable.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: The invention relates to a lighting device comprising a pixelated light emitting semiconductor chip (pixelated with pixels), an electronic semiconductor chip for actuating the pixelated light emitting semiconductor chip, and a substrate. The pixelated light emitting semiconductor chip and the electronic semiconductor chip are placed next to one another on the substrate. The invention further relates to a process for manufacturing a lighting device.

Abstract: An optoelectronic semiconductor component may include a housing having a recess, and a chip carrier which is a part of the housing. The chip carrier may have a first fastening side and an upper side. The optoelectronic semiconductor chip may be mounted on the upper side in the recess. First electrical contact pads for external electrical contacting may be located on the first fastening side. Furthermore, second electrical contact pads for external electrical contacting may be located on a second fastening side, opposite to the first fastening side, of the housing. First and second electrical contact pads electrically assigned to one another may be electrically short-circuited so that the semiconductor component can be electrically contacted by the first or by the second fastening side.

Abstract: A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed. In an embodiment an arrangement includes a conversion element having a wavelength converting conversion material, a matrix material in which the conversion material is embedded and a substrate on which the matrix material with the embedded conversion material is directly arranged, wherein at least one condensed sol-gel material, and a laser source configured to emit primary radiation during operation, wherein the conversion element is arranged in a beam path of the laser source, wherein the conversion element is mechanically immovably mounted with respect to the laser source, and wherein the primary radiation of the laser source is dynamically arranged to the conversion element.

Abstract: A method for operating an optoelectronic semiconductor device. The semiconductor device includes a first optoelectronic semiconductor chip for generating, for example, blue light, an optional second optoelectronic semiconductor chip for generating, for example, green light, and a third optoelectronic semiconductor chip for generating, for example, red light. The semiconductor device also includes a driver unit which supplies the semiconductor chips with current during operation. The third semiconductor chip is operated on the basis of a temperature-brightness characteristic curve stored in the driver unit. The temperature-brightness characteristic curve is configured for a minimum color location deviation over an intended operating temperature range, relative to at least one reference color location.

Abstract: A lighting apparatus for show-business or entertainment sector comprises a light-radiation generator for projecting a lighting beam towards a lighting space that includes one or more undesired lighting zones. A motorization causes the lighting beam to scan the lighting space as a function of scanning-control signals as received by the lighting apparatus. Driving circuitry is provided, configured to control emission of the lighting beam, as well as processing circuitry configured to sense the scanning-control signals received and the scanning position of the lighting beam of the light-radiation generator. As a result of the detection of received scanning-control signals that can lead the lighting beam to being brought into the undesired lighting zone, the processing circuitry acts on the motorization and/or on the driving circuitry of the light-radiation generator, containing projection of the lighting beam directed towards the undesired lighting zone and preventing possible risks of a photobiological nature.

Abstract: A device for processing a multiplicity of semiconductor chips in a wafer assemblage includes an electrically conductive carrier for contacting rear contacts of the semiconductor chips, an electrically conductive film for contacting front contacts of the semiconductor chips that are situated opposite the rear contacts, and a squeegee, which is displaceable relative to the film and is configured to press a region of the film in the direction toward the carrier.

Abstract: A light fiber and an illuminating device are disclosed. In an embodiment a light fiber includes a cladding and at least two cores configured to conduct electromagnetic radiation, wherein each core comprises an incoupling surface at one end of the light fiber, wherein the incoupling surfaces of different cores are not contiguous, wherein each of the cladding and/or the cores includes at least one outcoupling zone configured to outcouple the electromagnetic radiation from the cores, wherein the light fiber is configured to emit at least a majority of the electromagnetic radiation in a region of outcoupling zone transverse to a main extension direction of the light fiber, wherein the cores are configured to guide primary radiation, and wherein the outcoupling zone is configured to mix the primary radiation so that mixed light is emitted from the light fiber.

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 ?m.

Abstract: A lighting device and a lighting system are disclosed. In an embodiment, a lighting device includes at least one optoelectronic semiconductor chip, two contacts configured to couple the lighting device to a DC voltage and a driver circuit interconnected in series with the at least one semiconductor chip in a string, wherein the driver circuit comprises a monolithic, unhoused controller, wherein the driver circuit is configured to adjust a current for operating the at least one semiconductor chip, and wherein the string extends between the two contacts in an electrically coupling way.

Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.

Abstract: An electronic semiconductor component with a housing structure and a cavity introduced into the housing structure is specified. The cavity comprises a base surface. Furthermore, the electronic semiconductor component comprises an auxiliary layer arranged on the base surface of the cavity and a marking penetrating the auxiliary layer at least as far as the base surface of the cavity. The marking comprises an optical contrast that depends on both an optical property of the housing structure and an optical property of the auxiliary layer. Furthermore, a method for producing an electronic semiconductor component is given.

Abstract: Techniques and architecture are disclosed for mobile transport systems configured to determine vehicle positions within an area using light-based communication signals. The system includes a plurality of luminaires located in an area and configured to transmit luminaire position data recognizable by a sensor disposed on a vehicle. The sensor receives an image of a luminaire including a light-based communication signal encoded with luminaire position data. Luminaire position data can be combined with luminaire layout information to determine a known location of the luminaire. A vehicle position relative to the known luminaire location can be determined based on mathematical relationships. Vehicle orientation relative to the area can be determined based an asymmetric fiducial pattern or multiple known luminaire locations. The system can combine a vehicle position relative to a known luminaire location with vehicle orientation relative to the area to determine a vehicle position relative to the area.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip including a carrier substrate, a first and a second side surface facing one another, respectively, and a third and a fourth side surface that intersect the first and second side surfaces, and a first main surface, at which at least one contact area is arranged, the carrier substrate being transparent to the emitted electromagnetic radiation, a transparent first potting compound directly adjacent to the first side surface; and a reflective potting compound directly adjacent to the second side surface and the carrier substrate and applied directly to the semiconductor chip.

Abstract: A radiation-emitting semiconductor chip includes a semiconductor body; a first contact layer having a first contact surface for external electrical contacting of the semiconductor chip and a first contact web structure connected to the first contact surface, wherein the first contact web structure is a region of the first contact layer that, compared to the first contact surface, has a comparatively small extent at least in a lateral direction; a second contact layer, wherein first and second contact web structures overlap in places in plan view of the semiconductor chip; a current distribution layer; and an insulation layer having a plurality of openings into which the current distribution layer extends.