Abstract: An optoelectronic component may include four semiconductor chips arranged on a substrate. A first semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 610 to about 650 nm during operation. A second semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 450 to about 475 nm during operation. A third semiconductor chip may be configured to emit electromagnetic radiation with color space coordinates of 0.3231±0.005 and 0.5408±0.005 in the CIE color space during operation. A fourth semiconductor chip may emit electromagnetic radiation having color space coordinates of 0.5638±0.005 and 0.4113±0.005 in the CIE color space during operation. The third and fourth semiconductor chips may have a conversion layer configured to convert a wavelength of the electromagnetic radiation emitted by the active region.

Abstract: An optoelectronic circuit assembly has a first optoelectronic component and a second optoelectronic component, wherein the optoelectronic components each comprise a housing body with an upper face and a lower face, wherein in the housing body of each optoelectronic component, a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are embedded, wherein the optoelectronic components are mounted on a circuit board, wherein the first optoelectronic semiconductor chip of the first optoelectronic component and the first optoelectronic semiconductor chip of the second optoelectronic component are connected to a first conductor track in an electrically conductive manner, wherein the second optoelectronic semiconductor chip of the first optoelectronic component and the second optoelectronic semiconductor chip of the second optoelectronic component are connected to a second conductor track in an electrically conductive manner, wherein the first optoelectronic semiconductor chip or the

Abstract: Systems and methods disclosed herein include distance-measuring unit for measuring a detection field based on a time-of-flight signal. The distance-measuring unit includes an emitter unit for emitting laser pulses, an optical unit for guiding the laser pulses into different solid angle segments, a sensor unit for receiving echo pulses from the solid angle segments, and a logic assembly configured to read the sensor unit, wherein at least the emitter unit, the optical unit, and the sensor unit are arranged on a common substrate.

Abstract: A lighting device that illuminates textiles by optical waveguides includes a body that receives the optical waveguide; a clamping device for the received optical waveguide; and a lighting module, wherein the lighting module is arranged within the body to enable light emitted by the lighting module during operation to be coupled into the optical waveguide, and the clamping device is adapted to repeatedly clamp and release the optical waveguide.

Abstract: A 3D display element (2) comprising a plurality of emission regions (20) adapted to emit electromagnetic radiation (L), wherein at least some emission regions (20) are associated with a first group and at least some emission regions (20) are associated with a second group (21, 22), wherein by means of the emission regions (20) of the first group (21) respectively a pixel (100) of a first perspective (11) of an image (B) can be represented, and by means of the emission regions (20) of the second group (22) respectively a pixel (100) of a second perspective (12) of the image (B) can be represented the sum of all emission regions (20) is greater than the sum of all pixels (100) of all perspectives (11, 12).

Abstract: The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.

Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a plurality of light-emitting diode chips arranged on a mounting surface of a carrier, a first translucent element and a second translucent element, wherein the first translucent element is arranged over the plurality of light-emitting diode chips as viewed from the mounting surface and the second translucent element is disposed on a side of the plurality of light-emitting diode chips opposite the first translucent element such that the light-emitting diode chips are arranged between the first and second translucent elements, wherein the first and second translucent elements are configured to emit light generated by the light-emitting diode chips during operation outwardly, and wherein the first and second translucent elements appear white or grey in daylight.

Abstract: An ambient light detector, a detector array and a method are disclosed. An ambient light sensor includes a first plurality of sensor elements, where each sensor element is configured to provide a signal in response to a level of illumination and a second plurality of reference elements, each reference element configured to provide a reference signal and each including a blocking element configured to shield the respective reference element from being illuminated, where the first plurality is larger than the second plurality and the first plurality of sensor elements and the second plurality of reference elements are arranged in an array, and where a sensor element and a reference element are laterally arranged on or in a common layer substrate sharing at least one common first contact.

Abstract: A device for cancelling undesired fractions in a detected signal may include a first region having an output node and including a light sensitive sensor configured to detect a first signal and an analogue to digital converter coupled to the output node. A second region may be switchably coupled to the first region based on a first control signal to the first region. The second region may include a storage device configured to store a signal based on the detection of the first signal. The second region may include an output node coupled to the sensor. The second may be configured to provide a compensation signal based on the stored signal to the light sensitive sensor during detection of a second signal.

Abstract: A lighting device and a method for operating a lighting device are disclosed. In an embodiment, a lighting device includes at least one semiconductor component comprising a plurality of pixels and configured to generate light illuminating a field of view and a drive circuit, wherein the field of view is divided into a plurality of regions, wherein each pixel is configured to illuminate a region of the field of view, wherein each pixel comprises at least a first type subpixel and a second type subpixel, and wherein the first type subpixel is configured to emit light of a white color location and the second type subpixel is configured to emit light of a non-white color location.

Abstract: A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.

Abstract: A method of manufacturing semiconductor device includes providing a radiation emitting semiconductor chip having a first main surface, applying a metallic seed layer to a second main surface opposite the first main surface, galvanically depositing first and second metallic volume regions on the seed layer, depositing an adhesion promoting layer on the volume regions, and applying a casting compound at least between contact points, wherein before the metallic volume regions are galvanically deposited, a dielectric layer is first applied to the seed layer over its entire surface and openings are produced in the dielectric layer by etching, and a material of the metallic volume regions is deposited through the openings of the dielectric layer, wherein the dielectric layer is underetched at boundaries to the openings and the underetches are filled with material of the metallic volume regions during the galvanical depositing of the metallic volume regions.

Abstract: A method for producing a plurality of radiation-emitting semiconductor components and a radiation-emitting semiconductor component are disclosed. In an embodiment a method includes providing an auxiliary carrier, applying a first structured wavelength converting layer to the auxiliary carrier comprising a plurality of structural elements, filling regions between the structural elements with a first reflective casting compound and applying a radiation-emitting semiconductor chip with its front side to one structural element of the first structured wavelength converting layer in each case.

Abstract: An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.

Abstract: A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

Abstract: A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

Abstract: A sensor device includes a first light emitter that emits light with a wavelength from a first spectral range, a second light emitter that emits light with a wavelength from a second spectral range, a first light detector configured to detect light with a wavelength from the first spectral range, but not to respond to light with a wavelength from the second spectral range, and a second light detector configured to detect light with a wavelength from the first spectral range and light with a wavelength from the second spectral range, wherein a distance between the first light emitter and the first light detector is smaller than a distance between the second light emitter and the second light detector.

Abstract: A headlamp includes a first semiconductor chip and a second semiconductor chip for generating light. The first and second semiconductor chips each include several pixels. A first optics is arranged to direct light from the first semiconductor chip with a first magnification into a base region. Via a second optics, light of the second semiconductor chip is directed into a bright region with a second magnification. The second magnification is between 0.3 times and 0.7 times the first magnification inclusive, so that the bright region is smaller than the base region. The bright region is within the base region.

Abstract: The invention relates to a method for producing at least one optoelectronic component (100) comprising the steps A) providing an auxiliary carrier (1), B) epitaxially applying a sacrificial layer (2) on the auxiliary carrier (1), wherein the sacrificial layer (2) comprises germanium, C) epitaxially applying a semiconductor layer sequence (3) on the sacrificial layer (2), D) removing the sacrificial layer (2) by means of dry etching (9), such that the auxiliary carrier (1) is removed from the semiconductor layer sequence (3).

Abstract: A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.