Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed.

Abstract: An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.

Abstract: A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element.

Abstract: A radiation-emitting semiconductor arrangement includes at least one semiconductor body having an active region that generates a primary radiation, and includes a radiation conversion element, wherein the radiation conversion element converts the primary radiation at least partially into a secondary radiation during operation of the semiconductor arrangement, the radiation conversion element emits the secondary radiation at a narrow angle, the radiation conversion element emits the secondary radiation into a projected spatial angle of not more than ?/5, and the semiconductor arrangement includes an optical deflector movable during operation of the semiconductor arrangement.

Abstract: An optoelectronic component includes a light emitter including a multiplicity of segments, wherein each segment of the light emitter includes a multiplicity of image points configured to emit light, and an optical element configured to image light emitted by the light emitter into a target region, light emitted by the individual segments of the light emitter is superimposed in the target region, the optical element is subdivided into a number of segments corresponding to a number of segments of the light emitter, each segment of the optical element is respectively arranged over a segment of the light emitter, and the segments of the optical element are respectively configured as double-sided aspherical lenses.

Abstract: A dimmable light source for emitting white overall radiation may include a dimmer and a light-emitting diode. The dimmer may vary a current intensity of a current for operating the light-emitting diode during the operation of the light source. The LED may include a semiconductor layer sequence to emit primary radiation, and the LED may further include a conversion element configured to at least partially convert the primary radiation into secondary radiation having a first emission band with a first emission maximum ranging from 400 nm to 500 nm and a second emission band with a second emission maximum ranging from 510 nm to 700 nm. A relative intensity of the first emission band may reduce with decreasing current intensity of the current for operating the LED, and a relative intensity of the second emission band may increase with decreasing current intensity of the current for operating the LED.

Abstract: A method for determining a distance (d) and a reflectivity of an object surface (14) using a laser source (10) that emits light (12) at a certain power and using a detector (16) that detects a level of irradiance of light (18) reflected by or scattered back from the object surface (14) and that outputs a time-dependent voltage signal on the basis thereof comprises: setting (100, 110, 220, 230, 240) the laser source (10) so that the latter emits light (12) at a specified first value of power in at least one pulse, setting (100, 110) the detector (16) so that the latter emits outputs a first voltage signal with a specified second value for a gain factor on the basis of a level of irradiance of the detected reflected or back-scattered light (18), determining (120, 260) a first value for the distance of the object surface (14) from a measured light time-of-flight (ToF) assigned to the first voltage signal, adapting (130, 150 220) the first value of the power of the laser source (10) and/or the second value of the

Abstract: A light-emitting component a first layer stack configured to generate light, at least one additional layer stack configured to generate light, where each of the first layer stack and the at least one additional layer stack are separately drivable from one another and where an auxiliary structure is arranged between the first layer stacks and the at least one additional layer stacks.

Abstract: A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.

Abstract: An optoelectronic light source includes a semiconductor laser configured to produce polarized primary radiation, a converter material configured to absorb at least part of the primary radiation and convert the primary radiation into a secondary radiation of an increased wavelength, a planar multi-layered mirror located between the semiconductor laser and the converter material, the multi-layered mirror configured to transmit the primary radiation and reflect the secondary radiation, and an optical element provided between the semiconductor laser and the multi-layered mirror, wherein the optical element is configured such that the primary radiation coming from the semiconductor laser impinges on the multi-layered mirror at a Brewster angle.

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence having an active zone that generates radiation, a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence, and a second electrode that supplies current and extends from the bottom side to a top side of the semiconductor layer sequence opposite the bottom side, wherein the second electrode includes at least one current distribution structure on the top side, and the current distribution structure is impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions.

Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.

Abstract: An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer.

Abstract: The invention relates to a method for classifying a light-emitting semiconductor component (301) for an image sensor application, wherein the semiconductor component (301) is designed as a light source for an image sensor (302), comprising the following steps: providing the light-emitting semiconductor component (301); determining at least one of the following parameters of the light emitted with an emission spectrum by the light-emitting semiconductor component (301) during operation: R=?qR(?)·S(?)d?·texp, G=?qG(?)·S(?)d?·texp, B=?qB(?)·S(?)d?·texp, wherein qR(?), qG(?), and qB(?) are spectral sensitivities of a red, green, and blue color channel of the image sensor (302), S(?) is the emission spectrum of the light-emitting semiconductor component (301), texp is an exposure time, and ? designates a wavelength; classifying the light-emitting semiconductor component (301) into a class from a group of classes, which are characterized by different value ranges of at least one parameter that depends on at least o

Abstract: An optoelectronic component, having an optoelectronic semiconductor chip, includes a substrate, wherein at least two light-emitting sections are arranged laterally next to one another over an upper side of the substrate, the light-emitting sections are separately controllable, the light-emitting sections generate electromagnetic radiation from different spectral ranges, the light-emitting sections are formed by a layer sequence, an active region is formed inside the layer sequence, trenches are formed between the light-emitting sections, and the trenches fully divide the active region so that the light-emitting sections are separated from one another.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material above the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; simultaneously spraying particles and a further material onto the cast surface, wherein a mixture of the further material and the particles includes a proportion of the particles of 20 percent by weight to 60 percent by weight, a portion of the particles remains at the cast surface, and a topography is created at the cast surface.

Abstract: In an embodiment a passive matrix LED display module includes n>1 first electrical lines connected to a respective first switch, m>1 second electrical lines connected to a respective second switch and at least m·n LED light sources, wherein each of the LED light sources is connected on an anode side to a first line and on a cathode side to a second line, wherein each of the first switches is a push-pull switch having a first terminal for connection to an LED supply voltage, a second terminal for connection to an adjustable discharge potential, a third terminal for receiving a switching signal and a fourth terminal for connection to an associated first line, wherein each of the second switches in a switched state is configured to allow current to flow to a reference potential, and wherein the second terminals of the push-pull switches are connected in common to an output voltage terminal of an adjustable voltage source.

Abstract: Systems and methods disclosed herein includes a distance-measuring unit for measuring a distance to an object located in a detection field based on a time-of-flight signal. The distance-measuring unit includes an emitter unit for emitting laser pulses, an optical unit coupling the emitter unit to the detection field, the optical unit configured to guide the laser pulses into the detection field during operation, and a receiver unit having a sensitive sensor surface for receiving laser pulses reflected at the object as echo pulses, wherein the receiver unit is coupled to the detection field by means of the optical unit such that the echo pulses received from the detection field are guided through the optical unit onto the sensor surface during operation.

Abstract: A method of producing laser bars or semiconductor lasers includes providing a carrier composite to form a plurality of carriers for the laser bars or for the semiconductor lasers, providing a semiconductor body composite including a common substrate and a common semiconductor layer sequence grown thereon, forming a plurality of separation trenches through the common semiconductor layer sequence such that the semiconductor body composite is divided into a plurality of semiconductor bodies, applying the semiconductor body composite to the carrier composite such that the separation trenches face the carrier composite, thinning or removing the common substrate, and singulating the carrier composite into a plurality of carriers, wherein a plurality of semiconductor bodies are arranged on one of the carriers, and the semiconductor bodies arranged on one common carrier are laterally spaced apart from one another by the separation trenches.

Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.