Abstract: A phase-control power controller that converts a line voltage to an RMS load voltage includes an analog load voltage sensor that includes a light emitter that provides an optical output related to an RMS load voltage, and a phase-control circuit that has a comparison circuit that varies a resistance in the phase-control circuit responsive to the optical output. The comparison circuit includes an optically coupled transistor that senses the optical output from the light emitter, a load sensitive resistor that emits an amount of thermal energy corresponding to an amount of optical energy sensed by the optically coupled transistor, and two thermally dependent resistors connected in series, where one of the two resistors has a resistance that corresponds to the amount of thermal energy emitted by the load sensitive resistor and that varies the resistance in the phase-controlled dimming circuit.
Abstract: A phase-control power controller that converts a line voltage to an RMS load voltage includes a fixed forward phase-control clipping circuit that clips a load voltage to provide an RMS load voltage. A conduction angle of the phase-control clipping circuit is defined by a time-based pulse source that triggers conduction in a three-terminal thyristor with pulses provided at constant time intervals independently of line voltage magnitude. The power controller may be in a voltage conversion circuit that converts the line voltage at a lamp terminal to the RMS load voltage usable by a light emitting element of the lamp.
Abstract: In an optoelectronic component, having a semiconductor body (1) which includes a substrate (2) and a layer system (3) deposited on the substrate (2), a main surface of the semiconductor body (1) on the opposite side from the substrate (2) being secured to a support (4) by means of a soldered join (7), and the support (4) having a metallization (5) on the side facing the semiconductor body (1), wherein the metallization (5) is silver-free. Also disclosed is an optoelectronic component having a thin-film semiconductor body (8) which is secured to a support (4) by means of a soldered join (7), and the support (4) has a metallization (5) on the side facing the semiconductor body (8), in which the metallization (5) is silver-free.
Type:
Application
Filed:
September 28, 2004
Publication date:
May 26, 2005
Applicant:
Osram Opto Semiconductors GmbH
Inventors:
Matthias Winter, Georg Bogner, Stefan Gruber
Abstract: A lamp contains a lamp voltage conversion circuit within the lamp and connected to a lamp terminal. The voltage conversion circuit includes a phase-control clipping circuit that clips a load voltage and provides an RMS load voltage to the lamp. The phase-control clipping circuit has a time-based pulse source that triggers conduction of the phase-control clipping circuit independently of line voltage magnitude.
Abstract: A phase-control power controller that converts a line voltage to an RMS load voltage includes a fixed, reverse phase-control clipping circuit that performs phase-control clipping of a load voltage to provide an RMS load voltage. A conduction angle of the phase-control clipping circuit is defined by a time-based pulse source that triggers conduction in the phase-control clipping circuit independently of line voltage magnitude. The phase-control clipping circuit includes a transistor switch whose gate receives positive polarity signals from the time-based pulse source to trigger conduction of the phase-control clipping circuit. The power controller may be in a voltage conversion circuit that converts a line voltage at a lamp terminal to the RMS load voltage usable by a light emitting element of the lamp.
Abstract: A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced apart from one another on a common substrate (3) and have at least one first contact layer (4). The first semiconductor layer construction (1) has an electromagnetic-radiation-generating region (5) arranged between p-conducting semiconductor layers (6) and n-conducting semiconductor layers (7) of the first semiconductor layer construction (1). A second contact layer (8) is at least partially arranged on that surface of the first semiconductor layer construction (1) which is remote from the substrate (3) and that of the second semiconductor layer construction (2).
Type:
Application
Filed:
September 28, 2004
Publication date:
May 26, 2005
Applicant:
Osram Opto Semiconductors GmbH
Inventors:
Glenn-Yves Plaine, Tony Albrecht, Peter Brick, Marc Philippens
Abstract: A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).
Type:
Grant
Filed:
November 6, 2001
Date of Patent:
May 24, 2005
Assignee:
Osram Opto Semiconductors GmbH
Inventors:
Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Ulrich Jacob, Raimund Oberschmid, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
Abstract: The invention describes a radiation-emitting semiconductor component with a luminescent conversion element, at which the semiconductor body is placed in a recess of the base body. A cup-like area is molded inside of the recess around the semiconductor body, which contains the luminescent conversion element and coats the semiconductor body. The cup-like portion is formed as indentation inside of the recess or as annular border on the base of the recess.
Type:
Grant
Filed:
October 28, 2002
Date of Patent:
May 24, 2005
Assignee:
Osram Opto Semiconductors GmbH
Inventors:
Herbert Brunner, Alexandra Debray, Harald Jāger, Günther Waitl
Abstract: The inventive white-light emitting luminescent conversion LED uses a chlorosilicate luminous substance which is doped with europium in addition to containing Ca and Mg and a garnet rare-earth substance, especially Y and/or Tb. This results in high quality colour reproduction and highly constant lighting properties at various temperatures.
Abstract: An amalgam assembly for a fluorescent lamp includes an exhaust tubulation closed at a free end thereof, a glass ball disposed in the tubulation, and a mercury amalgam body disposed in the tubulation between the glass ball and the tubulation closed end. The tubulation is provided with a pinched portion comprising a plurality of inwardly extending dimples separated from each other and adapted to engage the glass ball to retain the glass ball on a central axis of the tubulation. The glass ball rests on the dimples concentrically and gaps between the dimples allow gas to pass therethrough between the glass ball and an inside surface of the tubulation.
Abstract: Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.
Type:
Grant
Filed:
July 24, 2001
Date of Patent:
May 10, 2005
Assignee:
Osram GmbH
Inventors:
Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
Abstract: LED module for generating white light having a plurality of white-light LEDs including at least one LED with a central wavelength of between 495 nm and 507 nm, at least one LED with a central wavelength of between 511 nm and 529 nm, at least one LED with a central wavelength of between 586 nm and 602 nm, and at least one LED with a central wavelength of between 618 nm and 630 nm.
Abstract: A method of encapsulating an organic device including flash evaporating a getter layer on the substrate is disclosed. The getter layer comprises an alkaline earth metal, such as barium. The getter layer serves to protect the active components by absorbing surrounding moisture and gases.
Type:
Grant
Filed:
September 11, 2002
Date of Patent:
May 3, 2005
Assignee:
Osram Opto Semiconductors (Malaysia) Sdn. Bhd
Abstract: The invention provides for the formation of thin devices having an overall thickness which is less than the width of the sealing frame used to mount the cap. The formation of thin devices is facilitated by the use of spacers in the device region to support the cap.
Abstract: An encapsulation for an electrical device is disclosed. A cap support is provided in the non-active regions of the device to prevent the package from contacting the active components of the device due to mechanical stress induced in the package.
Abstract: A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.
Type:
Application
Filed:
August 27, 2004
Publication date:
April 28, 2005
Applicant:
Osram Opto Semiconductors GmbH
Inventors:
Martin Behringer, Johann Luft, Bruno Acklin
Abstract: The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).
Type:
Application
Filed:
November 20, 2001
Publication date:
April 28, 2005
Applicant:
OSRAM OPTO SEMICONDUCTORS GMBH
Inventors:
Martin Behringer, Karl Ebeling, Thomas Knodl, Johann Luft
Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
Type:
Application
Filed:
February 2, 2004
Publication date:
April 28, 2005
Applicant:
Osram Opto Semiconductors GmbH
Inventors:
Stefan Illek, Peter Stauss, Andreas Ploessl, Gudrun Diepold, Ines Pietzonka, Wilhelm Stein, Ralph Wirth, Walter Wegleiter
Abstract: The present invention relates to an apparatus with electro-luminescent components having one or more layers of organic active material. The electrodes are structured in such a way that the apparatus's layers are protected during structuring and the components may be tightly packed together to improve display resolution. The display includes two electrode layers in addition to the at least one organic layer. The display also includes a first layer and a second layer that form a structure with an overhang. The overhang prevents at least two electrodes from one of the electrode layers from contacting one another. The second layer includes a cross-linked material.
Abstract: A semiconductor laser having a semiconductor chip (1) which contains an active layer (5) and emits radiation in a main radiating direction (6). The active layer (5) is structured in a direction perpendicular to the main radiating direction (6) in order to reduce heating of the semiconductor chip (1) by spontaneously emitted radiation (10).