Abstract: A solid-state light source (10) that is compatible with the existing sockets normally reserved for filamented lamps (100). The solid-state light source (10) includes a hollow base (12) formed to mechanically and electrically adapt to an existing socket normally reserved for lamps (100). A sub-assembly (14) is adapted to cooperate with and fit into the hollow base (12). The sub-assembly (14) includes a circuit board (16) with a plurality of solid-state light sources (18) mechanically and electrically connected to one side (20) of the circuit board. Two electrical contacts (22, 24) are positioned on the other side (26) of the circuit board for connection to an electrical circuit. A light pipe (28) covers the plurality of light sources (18) and extends away therefrom to a terminal end (30).

Abstract: A locking system for two linear fluorescent lamps comprises an endcap (10) formed to receive two linear fluorescent lamps (12, 14) (FIG. 3). The endcap (10) has two chambers (16, 18) formed by the outside surfaces of endcap (10) and a central partition (19). Each of the chambers has a forward portion (20) and a rearward portion (22). The endcap (10) has a height H equal to the diameter of the fluorescent lamps, a width W equal to twice the diameter of the fluorescent lamps and a length, for example, 4 to 6 inches, that is substantially less than the length of the lamps, which can be one to eight feet long. A stop (24) is formed in each of the chambers at the forward portion (20) to retain the lamps within the endcap. Each of the stops (24), in the form of a reverse corner, extends inwardly toward the center of the endcap and has a first leg (26) with a first dimension equal to the height H and a second leg (28) with a second dimension that is greater than one half of said height H but less than the height H.

Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

Abstract: A nitride-based semiconductor component having a semiconductor body (1) with a contact metalization (4) applied thereon. The semiconductor body (1) is provided with a protective layer which, if appropriate, also covers partial regions of the contact metalization (4) and which has a plurality of recesses (5) arranged near to one another.

Abstract: A ceramic metal halide discharge lamp may be made having a monolithic seal between a sapphire arc tube and a polycrystalline alumina cap. The lamp is made by providing an arc tube of fully dense sapphire and providing a cap made of unsintered compressed polycrystalline alumina doped with magnesium oxide and yttrium oxide. The cap is presintered to remove binder material at a low temperature. The presintered cap is placed on an end of the arc tube to form a close interface. The presintered cap and arc tube are then heated to until the cap is fully sintered onto the arc tube and the sapphire tube grows into the cap. A monolithic seal is formed along the interface as the sapphire grows into the polycrystalline alumina.

Abstract: An optically pumped radiation-emitting semiconductor device with a surface-emitting quantum well structure (10), which has at least one quantum layer (11), and an active layer (8) for generating pump radiation (9) for optically pumping the quantum well structure (10), which is arranged parallel to the quantum layer (11). The semiconductor device has at least one emission region (12), in which the quantum well structure (10) is optically pumped, and at least one pump region (13). The quantum well structure (10) and the active pump layer (8) extend over the pump region (13) and over the emission region (12) of the semiconductor device, and the pump radiation (9) is coupled into the emission region (12) in the lateral direction.

Abstract: A first vehicle lamp driver circuit for a light emitting diode (LED) array, the LED array having a first string of four LEDs in series and a second string of four LEDs in series. A first LED driver drives the first LED string and a second LED driver drives the second LED string. In a STOP mode of operation, the current to both LED strings is controlled by the LED driver in series with the LED string. In a TAIL mode of operation, the current is provided to only one LED string via a series connected diode and resistor. When there is reduced input voltage, operation of the LED strings is provided by switching circuits that short-out one LED in each LED string. A second vehicle lamp driver circuit comprises a first LED string and a second LED string in series with a control switch having a feedback circuit for maintaining constant current regulation to control the sum of the current in each LED string and reduce switching noise.

Abstract: A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between ?1 and ?2 where ?2>?1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below ?2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below ?1, and passes electromagnetic radiation at a wavelength above ?1.

Abstract: The present invention relates to a method for the production of semiconductor components. This method comprises the steps of applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. The masking layers may be HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.

Abstract: According to the present invention at least one layer of an optoelectronic acting material, for example an emitter layer, is applied on a substrate (1) and subsequently dried in accordance with a method for the production of luminous diodes. At least one layer is set vibrating before it is completely dried. This step addresses trapped air and uneven surfaces of the layer.

Abstract: A radiation-emitting semiconductor chip (1) having a semiconductor layer sequence (3) comprising at least one active layer (2) that generates an electromagnetic radiation, and having an electrical contact layer (7) comprising a connection region (4) and a current injection region (5), which is arranged at a distance beside the connection region (4) and is electrically connected. In accordance with a first embodiment, an absorbent brightness setting layer (12) is applied between the connection region (4) and the current injection region (5) and/or, as seen from the connection region (4), outside the current injection region (5) on a front-side radiation coupling-out area (10) of the semiconductor layer sequence (3). The brightness setting layer absorbs in a targeted manner part of a radiation generated in the semiconductor layer sequence (3). In accordance with a second embodiment, a partly insulating brightness setting layer (6) is arranged between the connection region (4) and the active layer (2).

Abstract: An LED module includes a substrate having good thermal conductivity and one or more radiation-emitting semiconductor components that fixed on the top side of the substrate. The underside of the substrate is fixed on a carrier body having a high thermal capacity, in which the component fixing between the semiconductor components and the substrate and the substrate fixing between the substrate and the carrier body are embodied with good thermal conductivity. Furthermore, the invention relates to a method for producing the LED module, in which metal areas that are suitable as an etching mask improve the impressing of the current required during the anodic bonding, and at the same time, are used as contact areas for contact-connecting the radiation-emitting semiconductor components. The LED module has the advantage that the semiconductor components can be subjected to higher energization as a result of the high thermal capacity of the carrier body.

Abstract: A circuit for operating a high intensity discharge (HID) lamp includes an H-bridge connected between a common terminal and a power line, and a control circuit connected to the H-bridge. The control circuit includes a transformer having a primary winding connected between the common terminal and a power terminal and a secondary winding connected between the common terminal and the power line, and a current sense resistor connected in series between the secondary winding and the common terminal. The HID lamp is connected to the common terminal and to the second winding so as sense a current across the current sense resistor.

Abstract: A housing accommodating a semiconductor chip is set out. The housing and chip may be used for sending and/or receiving radiation. Popular applications of the housing may be in light emitting diodes. The housing includes a conductor strip that is punched into two electrically isolated portions. The housing further includes a cavity extending inwards from the top of the housing. The conductor portions include respective areas that are exposed at the bottom of the cavity. The semiconductor chip is bonded to one of the exposed areas and a wire bonds the chip to the second exposed area. The conductor portions also terminate in exposed electrodes, which allow for electrical connection of the chip with external devices. A window is formed in the cavity and the walls of the housing that form the cavity may be made of a reflective material. The electrodes remain unexposed to the window but for any residual areas about the chip and bonding wire within the first and second exposed areas.

Abstract: A semiconductor chip has a substrate that is in the form of a parallelepiped whose side surfaces are shaped as tilted parallelograms. Such a semiconductor chip has a high output efficiency and a homogeneous thermal load due to having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.

Abstract: An assembly (10) for a lamp. The assembly 10 includes a light source (12) having a center chamber (14) and opposite ends (16, 18), arrayed along a longitudinal axis (19). The ends (16, 18) are cylindrical in cross-section. A tubular shroud (20) surrounds the light source (12) and is coaxial with the longitudinal axis (19). The light source (12) is mounted within the shroud (20) by spring clips (26) one of which is mounted at either end of the shroud. The spring clips each include a base (28) lying in a first plane and having an aperture (30), for example, a star-shaped aperture, centrally located in the base. The apertures (30) in the two spring clips frictionally engage one of the ends (16, 18) of the light source (12). Each of the spring clips (26) has a U-shaped projection (32) at and end (33) of the base (26). The U-shaped projection comprises first and second upstanding walls (34, 36) joined by a first lip (38) that extends in a second plane and is fitted over the wall of the shroud (20).

Abstract: A ballast (10) for powering a gas discharge lamp load (30) comprises an inverter (100), an output circuit (200), and a fault detection circuit (300). During operation, fault detection circuit (300) monitors a first signal and a second signal within output circuit (300) and sets a fault threshold in dependence on the second signal. The second signal is indicative of the type of lamps in the load (30). In response to the first signal exceeding the fault threshold, fault detection circuit (300) issues a shutdown command directing the inverter (100) to cease operation.

Abstract: A method for producing a display, in which a first electrode film is produced on a substrate, functional layers are then applied to this film, and a second electrode film is then produced on the functional layer. The first and/or second electrode film according to the invention is produced overall or structured on the substrate by means of a contact printing process.

Abstract: A double-layer electrode coil for a high intensity discharge (HID) lamp and a method of making the electrode coil are provided. A more stable layer of coils is made by front winding, instead of back winding, the layers of wire. The second layer of wire is entirely within a helical groove on the exterior surface of the first layer of wire. This arrangement is particularly stable and permits more rapid insertion of the electrode shank after removal of the mandrel.

Abstract: A compact fused silica, electroded HID lamp for automotive forward lighting, which contains no mercury. The lamps voltage, approximately 40 volts, is developed in this lamp by vaporizing zinc iodide instead of mercury. A compromise between voltage and luminous flux is achieved through the choice of the sodium scandium (Na:Sc) molar ratio, between 4.5:1 and 6:1 and a zinc iodide (ZnI2) dose of 2 to 6 micrograms per cubic millimeter that permits the lamp to operate within the North America, European and Japanese automotive color specifications for white light. The voltage in the lamp can be controlled according to the zinc iodide doping level without seriously impacting the visible spectrum otherwise provided by the other known dopants in the lamp.