Abstract: A mounting assembly (10) for an electrodeless lamp (100). The mounting assembly (10) comprises a fixture housing (14) having an inner surface (16) and an outer surface (18). The fixture housing is preferably made from aluminum. Spaced-apart heat sinks (20, 21) are affixed to the inner surface (16) of the fixture housing (14). A reflector (22), which is preferably concave, as is the fixture housing, is positioned within the fixture housing (14). The reflector (22) contains two apertures (24, 26) that are aligned with the heat sinks (20, 21). Thermal insulators (28, 29) are positioned in the apertures and surround the heat sinks, thus thermally isolating the reflector from the heat sinks. The lamp (100) is mounted in the fixture housing by attaching brackets (40, 42), which surround the ferrite transformer cores of the lamp, directly to the top surfaces of the heat sinks (20, 21).

Abstract: In the process according to the invention for producing low-defect semiconductor layers based on III-V nitride semiconductor material, first of all a substrate (1) made from a material which is not based on III-V nitride semiconductors is provided, and then a mask layer (2) is applied to the substrate in order to form unmasked regions (2c) and masked regions (2a, 2b) on the substrate. Then, starting from the unmasked regions (2c) of the substrate (1), the III-V nitride semiconductor layer (3) is grown. To avoid the formation of stress-induced cracks during the cooling phase from the growth temperature to room temperature, the mask layer (2) is formed on the substrate (1) in such a manner that some of the masked regions (2b) are designed to be wide enough to prevent the III-V nitride semiconductor layer (3) from growing together over these wide masked regions (2b), whereas the III-V nitride semiconductor layer does grow together only over the other, narrow masked regions (2a).

Abstract: Light-emitting diode chip having a semiconductor layer sequence with an active zone that emits electromagnetic radiation and an electrical contact structure comprising a radiation-transmissive electrical current expansion layer, which contains ZnO, and an electrical connection layer. The current expansion layer comprises a window, in which the connection layer is applied on a cladding layer of the semiconductor layer sequence, the connection layer being electrically conductively connected to the current expansion layer. In addition, the junction between the connection layer and the cladding layer, in the event of an electrical voltage being applied to the light-emitting diode chip in the operating direction, is not electrically conductive or is only so poorly electrically conductive that the entire, or virtually the entire, current flows via the current expansion layer.

Abstract: A method for producing semiconductor laser components in which, a number of chip mounting areas are formed on a cooling element having an electrically insulating carrier that is in the form of a plate. A number of semiconductor laser chips are then fit to the cooling element, with one semiconductor laser chip being arranged on each chip mounting area. Finally, the cooling element, with the semiconductor bodies fit on it, is subdivided into a number of semiconductor laser components.

Abstract: A method for producing a light-emitting semiconductor component having a thin-film layer sequence (14), in which a photon-emitting active zone (17) is formed. The thin-film layer sequence (14) is formed on a growth substrate. A reflection contact layer (40) is formed having contact with the thin-film layer sequence. A diffusion barrier layer (42) is applied to the reflection contact layer (40), and a solder contact layer (44)is applied to the diffusion barrier layer (42). The reflection contact layer (40), after it has been formed and before the diffusion barrier layer (42) is applied, is subjected to heat treatment for the purpose of producing an ohmic contact, and the surface of the reflection contact layer (40) is cleaned with a first etching solution after the heat treatment. As an alternative, the reflection contact layer (40) is subjected to heat treatment after the application of the solder contact layer (44) to the diffusion barrier layer (42) for the purpose of producing an ohmic contact.

Abstract: An optoelectronic component with an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation, and at least one electrical contact region having at least one radiation-transmissive electrical contact layer, which contains ZnO and is electrically conductively connected to an outer semiconductor layer. The contact layer is provided with watertight material in such a way that it is substantially protected against moisture.

Abstract: An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

Abstract: In order to subdivide a wafer (1) into chips, recesses (7) are introduced from a rear side (6), said recesses weakening the wafer (1) at the breaking points. As a result, it is possible to produce chips whose length dimensions are less than twice the thickness of the chips.

Abstract: A large-diameter tungsten-lanthana rod having an elongated grain structure substantially parallel to the longitudinal axis of the rod is described. The large diameter rod is produced by rolling at a temperature greater than 1400° C. and less than 1700° C. to achieve at least about a 40% reduction in cross-sectional area. The high strength of the longitudinally elongated grain structure is desirable for applications such as rocket nozzles.

Abstract: A compactly constructed configuration for coupling radiation into an optical fiber in a highly effective manner has a semiconductor laser with a radiation exit window, and an optical fiber having a radiation entry end. The radiation exit window of the semiconductor laser faces the radiation entry end of the optical fiber. A resonator is provided and has an end mirror and an output mirror, between which the semiconductor laser is disposed. The output mirror of the resonator is formed by the optical fiber. An optical device is disposed between the semiconductor laser and the optical fiber and serves for imaging only the fundamental mode of the radiation of the semiconductor laser onto the radiation entry end of the optical fiber.

Abstract: A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material.

Abstract: A vehicle lamp assembly (10) comprises a mounting bracket (12) having a first end (14) formed for affixation to a vehicle and a second end (16) formed for affixation to the lamp assembly (10). A housing (18) for the lamp assembly (10) includes a central axis (20) and a light source (22) mounted with respect to the central axis (20), the housing (18) having a forward portion (24). A lens cover (26) is provided for the lamp assembly (10), and the lens cover (26) has an external, circumferential rim (28) formed to engage the forward portion (24) of the housing (18) and an adjusting tab (30) extending from the rim (28) formed to cooperate with the second end (16) of said mounting bracket (12). The lens cover (26) is freely rotatable about the central axis (20) to allow for variable positioning.

Abstract: A solid-state lamp has a base formed to be received into a socket, and the base has a retainer receptacle formed therein. An axially extending support is fitted into the base. The support is formed of an electrically conductive, heat-sinking material and has a retainer engaging the retainer receptacle. An electrically insulating coating is formed on the support and electrically conductive traces are formed on the insulating coating. A plurality of solid-state light sources are formed on the support and are electrically connected to the traces, at least two of the traces providing electrical connection to the base whereby electrical connection can be made to the socket. The plurality of solid-state light sources are formed in a selected area of the support and in a preferred embodiment mimic the dual filaments of a prior art lamp.

Abstract: A red-emitting phosphor blend is provided which comprises a mixture of a first red-emitting phosphor having a general formula of (Y1-x-yGdxEuy)2O3 wherein 0≦x≦0.9 and 0.02≦y≦0.4 and a second red-emitting phosphor having a general formula of (Y1-a-bGdaEUb) BO3 wherein 0≦a≦1 and 0.02≦b≦0.1, the second red-emitting phosphor comprising from 10 to 40% by weight of the blend.

Abstract: A U-shaped compact fluorescent sun-tanning lamp (10) capable of generating and transmitting desired and undesired wavelengths of ultraviolet radiation, for example, the desired wavelength is in the range of 352 nm and the undesired wavelength is in the range of 254 nm. The lamp (10) comprises two lamp tubes (12) that are transparent to the desired wavelength of the ultraviolet radiation and substantially opaque to the undesired wavelength of the ultraviolet radiation. The tubes (12) are connected at the upper portion by a bight (14) that in an unmodified state is transparent to both the desired and the undesired wavelengths of the ultraviolet radiation. A modification (16) on the bight (14) is opaque to at least the undesired wavelength of ultraviolet radiation. In a preferred embodiment the modification is a ceramic paint (18).

Abstract: In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a back side of the semiconductor body for impressing a current into the semiconductor body containing the active layer, the back-side contact comprises a plurality of contact locations spaced from one another, whereby the size of the contact locations increases with increasing distance from the central front-side contact.

Abstract: A radiation-emitting semiconductor component, having a layer structure (30) which includes an active layer (32) which, in operation, emits radiation with a spectral distribution (60), and electrical contacts (36, 38, 40) for applying a current to the layer structure (30), includes a coating layer (44) which at least partially surrounds the active layer (32) and holds back a short-wave component of the emitted radiation (60).

Abstract: An LED module for illumination systems is provided that can be installed in and connected to an illumination system in a simple way both electrically and mechanically, and that ensures the greatest possible flexibility with reference to its possible uses. The LED module has a plurality of light-emitting diodes (2) arranged on a carrier plate (1), the carrier plate (1) being provided with at least one electrical connecting device (12) for electrically connecting the LED module, and with a fastening device (5) for fastening the LED module in an illumination system.

Abstract: A surface-mountable light emitting diode structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame, is described. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: An embodiment of the present invention pertains to an electrode that includes a metal oxide layer, and a conductive layer on that metal oxide layer. The metal oxide layer is an alkali metal oxide or an alkaline earth metal oxide that is formed by: (1) decomposing a compound that includes (a) oxygen and (b) an alkali metal or an alkaline earth metal, or (2) thermally reacting at least two compounds where one of the at least two compounds includes the alkali metal or the alkaline earth metal, and another one of the at least two compounds includes oxygen. The metal oxide layer can also be formed by thermally reacting at least two compounds where one of those compounds includes (a) oxygen and (b) an alkali metal or an alkaline earth metal.