Patents Assigned to OSRAM
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Patent number: 6851837Abstract: A solid-state lighting system (10) has a carrier (12 or 12a) having at least two electrically conductive traces (14, 16) thereon; and at least one module (18) carrying at least one solid-state light source (20) mounted with the carrier. The module (18) has electrical conductors (22, 24) in contact with the electrically conductive traces (14, 16) on the carrier. The carrier (12 or 12a) is elongated and the at least one module (18) has a horizontal aperture (26) therethrough with the electrical conductors (22, 24) extending at least into the aperture. The module (18) is slidably mounted upon the carrier (12 or 12a) with the carrier penetrating the horizontal aperture (26) and the electrical conductors (22, 24) in engagement with the electrical traces (14, 16).Type: GrantFiled: December 4, 2002Date of Patent: February 8, 2005Assignee: OSRAM Sylvania Inc.Inventors: Thomas Tessnow, Kim M. Albright
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Patent number: 6849878Abstract: A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.Type: GrantFiled: February 28, 2003Date of Patent: February 1, 2005Assignee: OSRAM Opto Semiconductors GmbHInventors: Stefan Bader, Michael Fehrer, Berthold Hahn, Volker Härle, Hans-Jürgen Lugauer
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Patent number: 6849881Abstract: An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.Type: GrantFiled: November 20, 2000Date of Patent: February 1, 2005Assignee: Osram GmbHInventors: Volker Harle, Berthold Hahn, Hans-Jürgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Völkl, Ulrich Zehnder, Alfred Lell, Andreas Weimer
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Patent number: 6849998Abstract: An arc discharge lamp has an arc chamber with an amalgam tip attached to and communicating with the arc chamber through a constricted area. An amalgam retainer is positioned in the arc chamber and is abutted against the constricted area. The amalgam retainer is vibration-insensitive, solid and liquid amalgam impervious and mercury vapor pervious. An amalgam is contained within the amalgam tip.Type: GrantFiled: August 9, 2001Date of Patent: February 1, 2005Assignee: Osram Sylvania Inc.Inventor: John W. Shaffer
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Patent number: 6850002Abstract: A device for the generation of specific colored light including white light by luminescent down conversion and additive color mixing based on a light-emitting diode (LED) comprising a semiconductor light-emitting layer emitting near UV light about 370-420 nm or blue light about 420-480 nm and phosphors which absorb completely or partly the light emitted by the light-emitting component and emit light of wavelengths longer than that of the absorbed primary light, wherein the light emitting layer of the light emitting component is preferably a Ga(In)N-based semiconductor; and at least one of the phosphors contains a metal sulfide fluorescent material activated with europium containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg and Zn; and/or at least another phosphor which contains a complex thiometalate fluorescent material activated with either europium, cerium or both europium and cerium containing 1) at least one element selected from the group consisting of Ba, Sr, Ca, Mg andType: GrantFiled: July 27, 2001Date of Patent: February 1, 2005Assignees: Osram Opto Semiconductors GmbH, Symyx Technologies Inc.Inventors: Earl Danielson, Andries Ellens, Frank Jermann, Wolfgang Rossner, Martin Devenney, Daniel Giaquinta, Manfred Kobusch
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Patent number: 6849297Abstract: A process for making an electroluminescent phosphor having a given emission spectra A, comprises the steps of manufacturing a beginning electroluminescent phosphor having an emission spectra B, different than A. A coating is applied to the phosphor having the emission spectra B to increase the resistance of the phosphor to the deleterious effects of moisture and change the emission spectra of the phosphor to emission spectra A. The application of the coating includes the steps of reacting a coating precursor with a mixture of oxygen and ozone.Type: GrantFiled: November 15, 2000Date of Patent: February 1, 2005Assignee: Osram Sylvania Inc.Inventors: Chen-Wen Fan, Kenneth T. Reilly, Richard G. W. Gingerich, Dale E. Benjamin
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Patent number: 6848819Abstract: An LED array surface-mounted on a circuit board and applied to a cooling member, such that any generated heat is optimally eliminated. The cooling member can be in any desired shape so that motor vehicle lights, such as blinkers, can be adapted to the outside contour of the vehicle. For a rotating light, the circuit board can be applied around a cooling member fashioned as a hollow cylindrical member which is adapted to rotate.Type: GrantFiled: May 12, 2000Date of Patent: February 1, 2005Assignee: Osram Opto Semiconductors GmbHInventors: KarlHeinz Arndt, Guenter Waitl, Georg Bogner
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Publication number: 20050017258Abstract: A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30).Type: ApplicationFiled: September 27, 2002Publication date: January 27, 2005Applicant: Osram Opto Semiconductor GmbhInventors: Michael Fehrer, Volker Harle, Frank Kuhn, Ulrich Zehnder
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Patent number: 6846101Abstract: LED lamp assembly particularly adapted for automotive applications that utilizes one or more standard replaceable LED bulbs with changeable optics to make multiple beam patterns. Preferably the optic is molded and easily replaced. An electric module is mounted directly under the LED to facilitate the electrical connection and provide good thermal contact. The LED light source(s) and interchangeable optic are positioned and sealed in the base of a main reflector or the vehicle hull by means well known to those skilled in the art.Type: GrantFiled: July 11, 2003Date of Patent: January 25, 2005Assignee: Osram Sylvania Inc.Inventor: Charles M. Coushaine
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Patent number: 6844687Abstract: A method of operating a discharge lamp includes modulation of lamp power with a first longitudinal mode frequency to reduce segregation of the vapor phase species within the arc tube. The first longitudinal mode excitation frequency is determined by the acoustic response spectrum observed at an upper region of the arc tube when operated vertically. A frequency in an arc-straightening frequency range may also be added to the input power to straighten and center the arc.Type: GrantFiled: September 26, 2003Date of Patent: January 18, 2005Assignee: Osram Sylvania Inc.Inventor: Nancy H. Chen
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Patent number: 6844565Abstract: According to the invention, a semiconductor component for the emission of electromagnetic radiation, especially light, is made that has the following features: an active layer for producing radiation, a p-type contact that is electrically connected to the active layer, an n-type contact that is electrically connected to the active layer, and a current-confining structure to define a current path, with the current-confining structure being provided between the n-type contact and the active layer.Type: GrantFiled: February 23, 2001Date of Patent: January 18, 2005Assignee: Osram Opto Semiconductors GmbHInventors: Alfred Lell, Volker Härle, Berthold Hahn, Johann Luft
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Patent number: 6843585Abstract: A mounting assembly (10) for an electrodeless 1 amp (100). The mounting assembly (10) comprises a fixture housing (14) having an inner surface (16) and an outer surface (18). The fixture housing is preferably made from aluminum. Spaced-apart heat sinks (20, 21) are affixed to the inner surface (16) of the fixture housing (14). A reflector (22), which is preferably concave, as is the fixture housing, is positioned within the fixture housing (14). The reflector (22) contains two apertures (24, 26) that are aligned with the heat sinks (20, 21). Thermal insulators (28, 29) are positioned in the apertures and surround the heat sinks, thus thermally isolating the reflector from the heat sinks. The lamp (100) is mounted in the fixture housing by attaching brackets (40, 42), which surround the ferrite transformer cores of the lamp, directly to the top surfaces of the heat sinks (20, 21).Type: GrantFiled: June 25, 2003Date of Patent: January 18, 2005Assignee: Osram Sylvania Inc.Inventors: Robert Martin, Jean F. Rouleau, Daniel Marian
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Patent number: 6844285Abstract: A transparent polycrystalline yttrium aluminum garnet (YAG) ceramic is described wherein the ceramic is colorless and transparent in both as-sintered and post-sinter, air-fired states which makes it highly desirable for lamp applications. The transparent YAG ceramic is co-doped with an amount of MgO and an amount of ZrO2 wherein the weight ratio of MgO to ZrO2 is from about 1.5:1 to 3:1.Type: GrantFiled: September 3, 2003Date of Patent: January 18, 2005Assignee: Osram Sylvania Inc.Inventor: George C. Wei
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Publication number: 20050003572Abstract: A semiconductor material (5) is grown in the windows (4) of a patterned mask layer (3) on a substrate (1). The semiconductor material (5) grows together over the mask layer (3) with semiconductor material (5) from adjacent windows to form a largely planar surface (7), which is suitable for the further growth of a component layer sequence (9). Through the choice of a substrate (1) having a smaller thermal expansion coefficient than the semiconductor material (5), particularly strong tensile stresses occur in the semiconductor material (5) or the component layer sequence (9) during cooling, which stresses lead to cracking. Since the semiconductor material (5) that has grown together forms a so-called coalescence region (6), having a high density of imperfections in the crystal lattice, these thermally governed cracks (13) are more likely to occur in this region.Type: ApplicationFiled: April 30, 2004Publication date: January 6, 2005Applicant: Osram Opto Semiconductors GmbHInventors: Berthold Hahn, Volker Harle
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Publication number: 20050002763Abstract: Cavities for holding semiconductor chips are etched anisotropically into a semiconductor wafer. An orientation of the wafer in the (100) pulling direction results in geometrically exactly etched sidewalls of the cavities with an angle of 125.3°. What is thereby achieved is that chips can slip into the cavity with a low risk of damage. A transparent cover plate is situated on the cavity plate.Type: ApplicationFiled: April 29, 2004Publication date: January 6, 2005Applicant: Osram Opto Semiconductors GmbHInventors: Mathias Kampf, Frank Singer, Jurgen Dachs, Alfred Bachler
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Patent number: 6837605Abstract: In an LED illumination system for illuminating a surface (5) with a predetermined illumination distribution, comprising at least one LED semiconductor body (2) which emits light symmetrical to a main beam direction (9) of the LED semiconductor body (2), illumination optics (4) are disposed between the at least one LED semiconductor body (2) and the surface (5) that is to be illuminated, which optics deflect the emitted light (6) asymmetrically relative to the main beam direction (9) of the LED semiconductor body (2). This makes it possible to purposely adjust the illumination of the surface (5) regardless of its shape.Type: GrantFiled: November 27, 2002Date of Patent: January 4, 2005Assignee: OSRAM Opto Semiconductors GmbHInventor: Joachim Reill
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Patent number: 6838391Abstract: A method for the production of semiconductor components which includes applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. At least one of the masking layers is HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.Type: GrantFiled: July 22, 2003Date of Patent: January 4, 2005Assignee: Osram Opto Semiconductors GmbH & Co. oHGInventor: Volker Härle
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Publication number: 20040264185Abstract: A light source, such as for a projection system, having a plurality of semiconductor chips and at least two different, electromagnetic-radiation-emitting chip types with different emission spectra, each semiconductor chip having a chip coupling-out area through which radiation is coupled out. Furthermore, the light source has a plurality of primary optical elements, each semiconductor chip being assigned a primary optical element, which in each case has a light input and a light output and reduces the divergence of at least part of the radiation emitted by the semiconductor chip during the operation thereof. The semiconductor chips with the primary optical elements are arranged in at least two groups that are spatially separate from one another, with the result that the groups emit separate light cones during operation of the semiconductor chips. The separate light cones of the groups are superposed by means of a secondary optical arrangement to form a common light cone.Type: ApplicationFiled: April 28, 2004Publication date: December 30, 2004Applicant: Osram Opto Semiconductors GmbHInventors: Stefan Grotsch, Georg Bogner
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Publication number: 20040264194Abstract: A mounting assembly (10) for an electrodeless lamp (100). The mounting assembly (10) comprises a fixture housing (14) having an inner surface (16) and an outer surface (18). The fixture housing is preferably made from aluminum. Spaced-apart heat sinks (20, 21) are affixed to the inner surface (16) of the fixture housing (14). A reflector (22), which is preferably concave, as is the fixture housing, is positioned within the fixture housing (14). The reflector (22) contains two apertures (24, 26) that are aligned with the heat sinks (20, 21). Thermal insulators (28, 29) are positioned in the apertures and surround the heat sinks, thus thermally isolating the reflector from the heat sinks. The lamp (100) is mounted in the fixture housing by attaching brackets (40, 42), which surround the ferrite transformer cores of the lamp, directly to the top surfaces of the heat sinks (20, 21).Type: ApplicationFiled: June 25, 2003Publication date: December 30, 2004Applicant: OSRAM SYLVANIA INC.Inventors: Robert Martin, Jean F. Rouleau, Daniel Marian
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Patent number: D501262Type: GrantFiled: January 20, 2004Date of Patent: January 25, 2005Assignee: Osram Sylvania Inc.Inventors: Michael R. Kling, James E. Oetken