Patents Assigned to OSRAM
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Publication number: 20040189195Abstract: Methods for protecting circuit device materials, optoelectronic devices, and caps using a reflowable getter are described. The methods, devices and caps provide advantages because they enable modification of the shape and activity of the getter after sealing of the device. Some embodiments of the invention provide a solid composition comprising a reactive material and a phase changing material. The combination of the reactive material and phase changing material is placed in the cavity of an electronic device. After sealing the device by conventional means (epoxy seal for example), the device is subjected to thermal or electromagnetic energy so that the phase changing material becomes liquid, and consequently: exposes the reactive material to the atmosphere of the cavity, distributes the getter more equally within the cavity, and provides enhanced protection of sensitive parts of the device by flowing onto and covering these parts, with a thin layer of material.Type: ApplicationFiled: June 26, 2003Publication date: September 30, 2004Applicant: Osram Opto Semiconductors GmbHInventor: Pierre-Marc Allemand
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Publication number: 20040192016Abstract: A method for fabricating a plurality of semiconductor bodies, in particular based on nitride compound semiconductor material. The method includes forming a mask layer (3) over a substrate (1) or over an initial layer (2), which mask layer has a plurality of windows (4) leading to the substrate (1) or to the initial layer (2), etching back the substrate (1) or the initial layer (2) in the windows (4), in such a manner that pits (41) are formed in the substrate (1) or in the initial layer (2) starting from these windows.Type: ApplicationFiled: February 17, 2004Publication date: September 30, 2004Applicant: Osram Opto Semiconductors GmbHInventors: Volker Harle, Hans-Jurgen Lugauer, Stephan Miller, Stefan Bader
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Publication number: 20040188702Abstract: A semiconductor laser diode having a semiconductor body (12) with a photon-emitting active layer (16) based on a nitride compound semiconductor. A resonator contact (24) is arranged on the semiconductor body (12), and a connection contact area (22) is electrically connected to the resonator contact (24). An uncovered free region (26) is provided at the surface of the semiconductor body (12) in a manner adjoining the resonator contact (24), at which free region hydrogen (30) can escape from the semiconductor body (12).Type: ApplicationFiled: December 23, 2003Publication date: September 30, 2004Applicant: Osram Opto Semiconductors GmbHInventors: Georg Bruderl, Uwe Strauss, Alfred Lell
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Publication number: 20040189212Abstract: A high-intensity discharge lamp connected to a lighting device has various superior emission properties such as efficiency. The discharge lamp includes a translucent ceramic discharge vessel, in which a pair of electrodes and a discharge medium are inserted. The lamp further includes an outer jacket, in which the arc tube is disposed, and a pair of feeder members. The discharge medium has metal halides including those of Na, Tl and Tm or Na, Tl, In and Tm, and the ratio (MTm/M) of the weight of the gross sealed mass M of the metal halides to the filled mass MTm of the Tm halide is about 0.4≦MTm/M≦0.9. The deviation in chromaticity (d.u.v.) on the x-y chromaticity coordinates (CIE 1931) for the overall operating position during the life of the lamp is within the range of about −0.006 to +0.010.Type: ApplicationFiled: March 2, 2004Publication date: September 30, 2004Applicant: OSRAM-MELCO TOSHIBA Lighting Ltd.Inventors: Seiji Ashida, Hisashi Honda, Shinji Atago, Satoshi Iwasawa
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Publication number: 20040188790Abstract: A radiation-emitting and/or radiation-receiving semiconductor component in which a radiation-emitting and/or radiation-receiving semiconductor chip is secured on a chip carrier part of a lead frame. The chip carrier part forms a trough in the region in which the semiconductor chip is secured wherein the inner surface of the trough is designed in such a way that it constitutes a reflector for the radiation emitted and/or received by the semiconductor chip.Type: ApplicationFiled: April 6, 2004Publication date: September 30, 2004Applicant: Osram Opto Semiconductors GmbH, a Germany corporationInventors: Karlheinz Arndt, Herbert Brunner, Franz Schellhorn, Gunter Waitl
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Publication number: 20040191963Abstract: One embodiment of this invention pertains to multiple encapsulated thin-film electronic devices. These encapsulated devices include a substrate and multiple thin-film electronic devices are on this substrate. Each of the multiple thin-film electronic devices has an active area. The encapsulated devices also include an encapsulation layer that is on the substrate and this encapsulation layer has multiple holes and these multiple holes are over the active areas of the multiple thin-film electronic devices. The encapsulated devices also include multiple substantially flat encapsulation pieces that are on the encapsulation layer and these multiple substantially flat encapsulation pieces cover the multiple holes of the encapsulation layer. An absorbent material is not attached to any of the substantially flat encapsulation pieces.Type: ApplicationFiled: March 31, 2003Publication date: September 30, 2004Applicant: Osram Opto Semiconductors GmbHInventor: Karl Pichler
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Publication number: 20040190567Abstract: A laser device for generating laser pulses with an optically pumped semiconductor laser (1), which has an external resonator and at least one mode-locker (10).Type: ApplicationFiled: February 19, 2004Publication date: September 30, 2004Applicant: Osram Opto Semiconductors GmbHInventors: Stephan Lutgen, Peter Brick
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Publication number: 20040190582Abstract: A vertically emitting semiconductor laser with an external resonator, a semiconductor body (1) in which a quantum well structure (4) is located as active zone that includes quantum wells (6) and barrier layers (5) situated therebetween, and at least one pumping radiation source (9) for irradiating into the active zone at an incidence angle &agr;p pumping radiation (10) of wavelength &lgr;p. The wavelength &lgr;p and the incidence angle &agr;p of the pumping radiation are selected in such a way that the absorption of the pumping radiation takes place substantially inside the quantum wells. This avoids the losses during the capture of charge carriers from the barrier layers into the quantum wells that occur in the case of optically pumped semiconductor lasers where the pumping radiation is absorbed in the barrier layers.Type: ApplicationFiled: December 22, 2003Publication date: September 30, 2004Applicant: Osram Opto Semiconductors GmbHInventors: Peter Brick, Stephan Lutgen, Norbert Linder
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Publication number: 20040187790Abstract: In order to achieve an as uniform as possible temperature over the entire surface of the substrate (2) during a temperature step and, in particular, during an epitaxy method, temperature equalization structures are incorporated in a substrate holder (1), on which the substrate (2) is located. A uniform temperature distribution on the substrate surface during the deposition of a semiconductor material reduces the emission wavelength gradient of the deposited semiconductor material. The temperature equalization structures produce specific temperature inhomogeneities in the substrate holder (1), and these smooth out the temperature profile of the substrate (2). For example, a groove (4) with a cooling effect and a support step (5) which produces a gap (8) between the substrate (2) and the substrate holder (1) are integrated in the edge area of the substrate holder (1).Type: ApplicationFiled: December 30, 2003Publication date: September 30, 2004Applicant: Osram Opto Semiconductors GmbHInventors: Stefan Bader, Matthias Peter, Alexander Walter, Volker Haerle
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Patent number: 6798810Abstract: The invention describes a surface-emitting laser (VCSEL) with lateral current injection. The pump current (4), from the contact face (2) on the decoupling side, in a first region (12) outside the resonator volume, is carried predominantly parallel to the resonator axis, and in a second region (13) is conducted predominantly perpendicularly to the active volume (9). A contact geometry is also described, which brings about automatic regulation of the size of the active volume (9) as a function of the pump current (4).Type: GrantFiled: June 5, 2003Date of Patent: September 28, 2004Assignee: Osram Opto Semiconductors GmbHInventor: Tony Albrecht
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Patent number: 6797940Abstract: The present invention relates to an optical encoder for measuring the speed and direction of a moving raster. The raster may be moving linearly or angularly and may further be connected to a moving element, such as a spinning shaft, of which speed and orientation measurement Is sought. The raster may comprise a slit plate or the like and include many formations in sequence. The formations may be successively opaque and transparent to light. The raster modulates light from a light source and the modulated light is detected by at least one set of three photodetectors. Output of the photodetectors is then used to generate a reference signal to which individual outputs are compared. The results of the comparisons are indicative of the speed and direction of the raster and moving element to which the raster is attached.Type: GrantFiled: December 29, 2000Date of Patent: September 28, 2004Assignee: Osram Opto Semiconductors GmbH & Co. oHGInventors: Ulrich Steegmueller, Stefan Groiss, Frank Moellmer
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Patent number: 6797919Abstract: A laser ablation system includes a first embodiment of a nozzle assembly where a laser beam is emitted through the nozzle assembly to remove materials on a target. The nozzle assembly includes a nozzle having a top end, and a window placed on the top end of the nozzle. The window includes one or more apertures and the laser beam is emitted through one of those apertures. Another laser ablation system includes a second embodiment of a nozzle assembly where a laser beam is emitted through the nozzle assembly to remove materials on a target. The nozzle assembly includes a nozzle having one or more channels at a top end of the nozzle. The nozzle assembly also includes a window that is placed on the one or more channels. A gas flows through the one or more channels and that gas flow reduces debris deposition on the window.Type: GrantFiled: September 29, 2003Date of Patent: September 28, 2004Assignee: Osram Opto Semiconductors GmbHInventors: Ian Millard, Karl Pichler
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Patent number: 6797211Abstract: A method of fabricating a device, including mechanically patterning a device layer using a stamp containing a desired pattern. The device layer is formed on a plastic or polymeric substrate. The stamp is pressed against the substrate under a load which patterns the device layer without cracking the device layer in the non-patterned areas.Type: GrantFiled: June 13, 2001Date of Patent: September 28, 2004Assignee: Osram Opto Semiconductors GmbH & Co. oHGInventors: Ewald Karl Michael Guenther, Zhong Chen, Brian Cotterell
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Patent number: 6794676Abstract: A novel method for fabricating an OLED display is disclosed wherein the conducting polymer layer is selectively deposited over the surface of the display such that the conducting polymer is kept away from areas where its presence is either not required for the resulting structure or is difficult to remove with usual techniques, such as laser ablation. Other polymer layers may be deposited uniformly over the surface of the display by way of spin coating or other suitable methods known in the art.Type: GrantFiled: February 25, 2003Date of Patent: September 21, 2004Assignee: Osram Opto Semiconductors GmbHInventors: Hash Pakbaz, Karl Pichler
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Patent number: 6794811Abstract: A fluorescent lamp includes a glass envelope having a sealed end portion, a base shell member of a cup-shape configuration adapted to engage the envelope end portion, and a collar of shrink wrap material disposed around the envelope end portion and sides of the base shell member, the shrink wrap material being shrunken and compressing against the envelope end portion and the base shell member, to fix the base shell member on the envelope end portion.Type: GrantFiled: February 15, 2002Date of Patent: September 21, 2004Assignee: Osram Sylvania Inc.Inventors: Gary T. Cunkelman, Richard C. Laird
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Patent number: 6793907Abstract: A novel molybdenum compound, ammonium dodecamolybdomolybdate (AMM), is described which may be used in the manufacture of molybdenum metal and molybdenum carbide powders. The molybdenum compound is a dodecaheteropoly acid salt having a Keggin-type structure wherein molybdenum resides in both the hetero as well as peripheral atomic positions. The novel compound has the general formula (NH4)2Mo12MoO40.6H2O. Because of its low solubility, the compound can be crystallized efficiently and at a high purity from ammonium molybdate solutions.Type: GrantFiled: July 29, 2002Date of Patent: September 21, 2004Assignee: Osram Sylvania Inc.Inventors: Raj P. Singh, Thomas A. Wolfe, David L. Houck
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Publication number: 20040178715Abstract: A mounting member (50, 50′, 50″, 50′″) for an arc tube/shroud combination comprises an annulus (52). The annulus (52) has at least one mounting tab (54) depending from an outer edge thereof and two spaced apart arc tube-pinch seal-engaging ribs (56, 58) spanning the diameter of the annulus for frictionally engaging the pinch seals. Holding tabs (62) depending from the annulus mount the annulus to a shroud. In a preferred embodiment the ribs (56, 58) have upstanding projections (60) that engage the pinch seals and provide the friction fit necessary for holding the pinch seals.Type: ApplicationFiled: March 14, 2003Publication date: September 16, 2004Applicant: OSRAM SYLVANIA INC.Inventors: Glen P. Williamson, Ebon L. McCullough
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Publication number: 20040177720Abstract: A tungsten-tin composite for green (lead-free) ammunition is provided wherein the composite is made with a spheroidized tungsten powder and has mechanical properties similar to those of lead. The composite may be fully densified at pressures less than about 250 MPa and is suitable for pressing complex projectile shapes to near net size.Type: ApplicationFiled: March 14, 2003Publication date: September 16, 2004Applicant: OSRAM SYLVANIA Inc.Inventors: Kenneth H. Shaner, Michael R. Pierce
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Publication number: 20040175189Abstract: In a light-emitting diode carrier 1, a plurality of light-emitting diodes 9 are mounted on the rear side 3 of the light-emitting diode carrier and project into a plurality of openings 2. During operation, the light-emitting diodes 9 radiate through the openings 2 of the light-emitting diode carrier 1. A film 10 is applied on the front side 4 of the light-emitting diode carrier 1, said film being transmissive to the radiation emitted by the light-emitting diodes and protecting the light-emitting diode carrier from ambient influences.Type: ApplicationFiled: February 2, 2004Publication date: September 9, 2004Applicant: Osram Opto Semiconductors GmbHInventors: Sven Weber-Rabsilber, Nadir Farchtchian, Naceur Chaabane
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Patent number: 6786791Abstract: A quartz arc tube for a metal halide lamps and its method of making are described. The quartz arc tube has a cylindrical design which promotes a nearly symmetric longitudinal surface temperature profile during operation. The profile has a maximum temperature of about 900° C. which allows for longer operating life at high average wall loadings.Type: GrantFiled: September 23, 2003Date of Patent: September 7, 2004Assignee: Osram Sylvania Inc.Inventors: William D. Koenigsberg, Miguel Galvez, Gregory Zaslavsky, Zeya Krasko, Joseph V. Lima