Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein a first sub-pixel includes a first conversion element having a green phosphor, wherein a second sub-pixel includes a second conversion element having a red phosphor and wherein a third sub-pixel is free of a conversion element, the third sub-pixel configured to emit blue primary radiation, wherein each sub-pixel has an edge length of at most 100 ?m, and wherein the light-emitting device is configured to enhance a gamut coverage of an emitted radiation.

Abstract: A method for producing a component and a component are disclosed. In an embodiment a method includes providing a substrate, applying a composite of components to the substrate, forming an anchoring layer on the composite of components, attaching a carrier to the anchoring layer, wherein the anchoring layer is disposed between the substrate and the carrier and removing the substrate, wherein the composite of components is divided into a plurality of components by forming a plurality of separating trenches, wherein, after removing the substrate, the components continue to be held on the carrier by the anchoring layer, and wherein the anchoring layer comprises at least one predetermined breaking layer having at least one predetermined breaking position, the predetermined breaking position being laterally surrounded by the separating trenches and—in a plan view of the carrier—being covered by one of the components.

Abstract: A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.

Abstract: The light conversion efficiency of a solar cell (10) is enhanced by using an optical downshifting layer (30) in cooperation with a photovoltaic material (22). The optical downshifting layer converts photons (50) having wavelengths in a supplemental light absorption spectrum into photons (52) having a wavelength in the primary light absorption spectrum of the photovoltaic material. The cost effectiveness and efficiency of solar cells platforms (20) can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic material. The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response of the photovoltaic material. The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.

Abstract: A light-emitting component is provided which comprises a carrier, a reflective layer and a light source, wherein the light source is mechanically fixed on a mounting surface of the carrier. The carrier has an electrically isolating basic body comprising an edge region, said edge region bounding the mounting surface. The edge region comprises a recess, wherein the reflective layer covers a base surface of the recess. Moreover, the mounting surface is vertically elevated with respect to the base surface of the recess at least in places, such that the reflective layer is kept away from the mounting surface. Furthermore, a method for producing such a light-emitting component is provided.

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

Abstract: A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength ?dom1 and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength ?dom2, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength ?dom1 of the first active layer and the second dominant wavelength ?dom2 of the second active layer are different from each other.

Abstract: A method of producing a radiation-emitting component includes: A) providing a dielectric layer that degrades against environmental influences; B) applying a first protective layer to the dielectric layer by an atomic layer deposition method, wherein the first protective layer includes elemental Si or in a compound; and C) applying a second protective layer to the first protective layer, the second protective layer including elemental Si, wherein a layer thickness of the first protective layer is less than or equal to 1 nm so that the first protective layer reduces or prevents a degradation of the dielectric layer.

Abstract: A method of producing an outcoupling element for an optoelectronic component includes A) providing quantum dots each having a core made of a semiconductor material, B) applying an inorganic or a phosphonate-containing ligand shell on a respective core of the quantum dots, and C) introducing the quantum dots with the ligand shell into a matrix material, wherein introducibility of the quantum dots with the ligand shell is facilitated compared to the quantum dots produced in step A), and the outcoupling element is transparent for radiation from the red and/or IR region.

Abstract: Color tunable lighting systems and methods are disclosed. The color tunable lighting systems and methods include user interfaces that allow for the control of color temperature and luminous intensity by a user. The systems and methods provide for flexibility and scalability, where a control module for controlling one or more solid state light source arrays can be programmed during installation for use with specific solid state light source arrays.

Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; and at least one capacitor body, wherein the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, and the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the control unit and the semiconductor chip.

Abstract: A method for manufacturing a multilayer optical element is disclosed. In an embodiment the method includes providing a substrate, applying a first optical layer by applying a first layer having a dielectric first material having a first refractive index, structuring the first layer by sectionally removing the first material and filling first interspaces with a dielectric second material having a second refractive index different from the first refractive index so that the second material has at least the same height as the first material, and applying at least a second optical layer by applying a second layer having the first material, structuring the second layer by sectionally removing the first material so that the first optical layer is exposed in second interspaces between second areas with the first material and filling the second interspaces with the second material so that the second material has at least the same height as the first material.

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment a method include providing a semiconductor layer sequence having an active region and a plurality of emission regions, forming a plurality of first contact points, filling spacings between the first contact points with a molding compound, removing a growth substrate of the semiconductor layer sequence and arranging the semiconductor layer sequence on a connection carrier comprising a control circuit and a plurality of connection surfaces, wherein each of the first contact points is electrically conductively connected to a connection surface, wherein the emission regions are independently controllable by the control circuit, and wherein the molding compound serves as a temporary auxiliary carrier that mechanically stabilizes the semiconductor layer sequence during the removal of the growth substrate.

Abstract: A light-emitting device and a method for manufacturing a light emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip having a light-outcoupling surface and an optical element arranged on the light-outcoupling surface, wherein the light-emitting semiconductor chip is laterally surrounded by a frame element in a form-locking manner, wherein the optical element is mounted on the frame element, wherein the frame element projects beyond the light-outcoupling surface in a vertical direction such that a gas-filled gap is present at least in a partial region between the light-outcoupling surface and the optical element, and wherein the frame element has a channel connecting the gap to an atmosphere surrounding the light-emitting device.

Abstract: A method of transmitting optical data includes providing a plurality of light sources in a transmission system, transmitting a data signal with data to be transmitted to the transmission system, decomposing the data signal in the transmission system into N different sub-signals, wherein N is a natural number with N?2, and controlling the light sources based on the sub-signals such that each of the light sources emits light according to one of the sub-signals and the light emitted overall by the light sources transmits the data.

Abstract: A multilayer ceramic converter with stratified scattering is disclosed. In an embodiment a ceramic wavelength converter assembly having a layered structure includes a phosphor layer, an upper barrier layer, and a lower barrier layer, wherein the phosphor layer is at least partially disposed between the upper barrier layer and the lower barrier layer.

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

Abstract: A method for severing an epitaxially grown semiconductor body is given, in which a) a growth substrate (2) is provided; b) at least one trench (20) is produced in a first main surface (2a) of the growth substrate (2) by etching; c) a semiconductor material is epitaxially deposited on the first main surface (2a) and in the trench (20), wherein a semiconductor body (1) is formed, and the semiconductor body at least partially fills the trench (20); and d) the semiconductor body and the growth substrate are cut along the main direction of the trench. Furthermore, a semiconductor chip with a cover surface and side surfaces is specified, in which the side surfaces each have a beveled section that is adjacent to the cover surface and whose surface is created by epitaxy.