Abstract: A diffractive optical element includes a carrier and a plurality of nano- or micro-scale rods arranged above a top side of the carrier, wherein the rods are arranged parallel to one another in a regular grid arrangement. A method of producing a diffractive optical element includes providing a carrier and epitaxially growing a plurality of mutually parallel nano- or micro-scale rods in a regular gird arrangement above a top side of the carrier.

Abstract: An optoelectronic component, a method for manufacturing an optoelectronic component and a method for operating an optoelectronic component are disclosed. In an embodiment, the component includes a carrier comprising a molded body and a light-emitting semiconductor body with a first segment and a second segment, wherein the first segment and the second segment are spatially separated from one another, and wherein each segment has an emission side facing away from the carrier. The component further includes a first electrical conductor path arranged on the first segment and on the second segment on a side of the light-emitting semiconductor body facing towards the carrier and a first electrical connecting structure and a second electrical connecting structure, each electrically connecting the first segment and the second segment to one another, wherein the first and second electrical connecting structure are electrically connected to one another by the first electrical conductor path.

Abstract: An optoelectronic component includes first and second semiconductor layers and an active layer that generates electromagnetic radiation, wherein the active layer is disposed between the first and second semiconductor layers, a recess in the first semiconductor layer, a front side provided for coupling out the electromagnetic radiation, a first electrical connection layer and a second electrical connection layer disposed on a rear side opposite the front side, wherein the first electrical connection layer is arranged at least partially in the recess, and a contact zone with a dopant of a second conductivity type different from the first conductivity type, wherein the contact zone adjoins the recess, and the first semiconductor layer and the second semiconductor layer are highly doped to prevent diffusion of the dopant from the contact zone into the first semiconductor layer and diffusion of the dopant from the contact zone into the second semiconductor layer.

Abstract: Optimized routing in localized dense networks is provided. A packet is received at a first network device in a network. An optimal route for the packet to a neighbor network device in the network is determined using a Source Routing Table (SRT), wherein the SRT includes an optimized routing table and a standard routing table, and wherein the optimized routing table comprises a list of neighbor network devices that the first network device can route to directly and wherein the standard routing table comprises a ZigBee source routing table. The packet is routed using the optimal route.

Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0?x1?1 or Alx1Iny1Ga1-x1-y1N with 0?x1?1, 0?y1<1 and x1+y1?1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1max and a minimum value x1min<x1max, and the second partial layer includes Alx2Ga1-x2N with 0?x2?x1min or Alx2Iny2Ga1-x2-y2N with 0?x2?x1min, 0?y2<1 and x2+y2?1.

Abstract: Quantum dot delivery methods are described. In a first example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles. The method also involves forming a dispersion of the plurality of nano-particles in a medium for delivery or storage, wherein the medium is free of organic solvent. In a second example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles in an organic solvent. The method also involves drying the plurality of nano-particles for delivery or storage, the drying removing entirely all of the organic solvent.

Abstract: An arrangement for operating radiation emitting devices includes a plurality of radiation emitting devices each having a first capacitance, a driver circuit that supplies the devices with electrical energy, and a compensation structure having a variable second capacitance corresponding to each device and means for adjusting the respective second capacitance, the compensation structure being connected to the device such that a total capacitance assigned to a device and dependent on the first capacitance can be adjusted by the second capacitance.

Abstract: A method of manufacturing an optoelectronic semiconductor chip includes providing a growth substrate, growing a semiconductor layer sequence on the growth substrate, depositing a metallization on a side of the semiconductor layer sequence remote from the growth substrate, depositing a layer on the metallization, coupling a carrier to the layer on a side of the layer remote from the semiconductor layer sequence, separating the growth substrate from the semiconductor layer sequence, depositing an electrically conductive layer on a side of the semiconductor layer sequence facing away from the carrier, separating the carrier from the layer, thereby forming a layer stack with the metallization, the semiconductor layer sequence, the electrically conductive layer and a coupling layer including at least a part of a further material of the layer remaining on a side of the metallization remote from the semiconductor layer sequence, and coupling the layer stack to a chip carrier.

Abstract: An optoelectronic lighting apparatus includes a reflector having a reflector face, an optical component arranged at a distance from the reflector face and opposite the reflector face, and a light-emitting component arranged on the reflector face and having a light-emitting face, wherein the optical component has a plurality of differently configured reflection elements for reflection, in a direction of the reflector face, of electromagnetic radiation emitted by the light-emitting face.

Abstract: An optoelectronic device is disclosed. In an embodiment an optoelectronic device includes a primary radiation source configured to emit an electromagnetic primary radiation during operation of the device and a conversion element arranged in a beam path of the electromagnetic primary radiation, wherein the conversion element includes quantum dots configured to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the device, and wherein the quantum dots have a diameter of 50 nm inclusive to 500 nm inclusive.

Abstract: Various implementations disclosed herein includes a method for operating lighting fixtures in horticultural applications. The method may include receiving a user input of a desired irradiance for a first color channel of one or more lighting fixtures that irradiates a plant bed, in which each of the one or more lighting fixtures comprises at least one light emitting diode (LED) array, determining, for each of the one or more lighting fixtures, a PWM setting of the first color channel such that each of the one or more lighting fixtures irradiate the plant bed at the desired irradiance based on calibration data stored in each of the one or more lighting fixtures, and applying, to each of the one or more lighting fixtures, the determined PWM setting of the first color channel.

Abstract: A composite material includes at least one photoluminescent material embedded as a light source in a transparent matrix, wherein a refractive index (nP) of the at least one photoluminescent material and a refractive index (nM) of the matrix differ by at most ±0.2.

Abstract: A method for preparing a glass composite wavelength converter comprising the steps of providing at least one phosphor material, providing a powder of glass components, mixing the phosphor material and the powder of glass components, thereby preparing a first mixture, adding at least one oxidizing agent to the first mixture, mixing the oxidizing agent with the first mixture, thereby preparing a second mixture, applying pressure and current to the second mixture, thereby preparing a glass composite wavelength converter is described. Furthermore, a glass component wavelength converter and a light source are described.

Abstract: A method for producing a semiconductor chip and a semiconductor chip are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is formed as a p-conducting semiconductor region and the second semiconductor layer is formed as an n-conducting semiconductor region, or vice versa, forming at least one recess in the semiconductor layer sequence so that side surfaces of the first and second semiconductor layers are exposed, wherein the recess is multiple times wider than deep and applying an auxiliary layer for electrically contacting the second semiconductor layer, wherein the auxiliary layer at the side surfaces exposed.

Abstract: A multilayer encapsulation, a method for encapsulating and an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a first electrode layer, an organic light-emitting layer stack abutting the first electrode layer, a second electrode layer abutting the light-emitting layer stack and a multilayer encapsulation abutting the second electrode layer, wherein the multilayer encapsulation comprises a barrier layer and a planarization layer, wherein the planarization layer abuts the second electrode layer, and wherein the planarization layer is arranged between the second electrode layer and the barrier layer.

Abstract: An illumination device and a method for producing an illumination device are disclosed.

Abstract: An edge emitting semiconductor laser and a method for operating an edge emitting semiconductor laser are disclosed.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

Abstract: An optoelectronic component includes a substrate, a first electrode, a second electrode, and at least one organic functional layer, which is arranged between the first electrode and the second electrode. The organic functional layer includes a matrix material, a first compound, and a second compound. The first compound interacts with the second compound, and the first compound and/or the second compound interacts with the matrix material. A conductivity of the organic functional layer is produced by the interactions.

Abstract: An illumination device for emitting illumination light, comprising: a light-emitting diode (LED) for emitting LED radiation, a laser for emitting laser radiation, and a luminescent element for at least partial conversion of the LED radiation and the laser radiation into conversion light, which forms at least part of the illumination light. The LED, the laser and the luminescent element are arranged relative to one another in such a way that during operation of the illumination device, on an incidence face of the luminescent element, respectively in a time integral, the LED irradiates an LED irradiation area with the LED radiation and the laser irradiates a laser irradiation area with the laser radiation. The laser irradiation area has at least one intersection with the LED irradiation area.