Abstract: A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.

Abstract: An illumination device includes multiple semiconductor primary light sources for emitting respective primary light beams, at least one movable mirror, which can be illuminated by means of the primary light beams, and which can assume at least two angle positions, and a luminophore element, which can be illuminated by means of primary light beams deflected by the at least one mirror. Light spots of the individual primary light beams are locally differentiable on the at least one luminophore element, an overall light spot composed of the light spots of the individual primary light beams is locally differentiable on the at least one luminophore element depending on the angle position of the at least one movable mirror, and at least one beam property of at least one primary light beam incident on the at least one luminophore element is variable during operation of the illumination device.

Abstract: A semiconductor structure includes a quantum dot. A polymeric organic layer encapsulates the quantum dot to create a coated quantum dot, and at least one additional organic layer and/or inorganic insulator layer encapsulates the coated quantum dot, wherein forming the one or more layers of organic material that encapsulates the coated quantum dot comprises forming a plurality of layers of polymers using a layer-by-layer deposition process.

Abstract: A partially coated lamp capsule (212) for a projection headlamp (12) has filament (224) in capsule envelope (220) having light-transmissive coating (60) extending from capsule upper region (225) towards filament distal end (227) to an axial location in a region defined between about 0.098 inch (2.5 mm) above filament distal end (227) and about 0.098 inch below filament distal end (227), the capsule envelope (220) being uncoated on an undistorted portion of capsule envelope (220) below filament proximal end (229). Lamp capsule (212) is useful in projection headlamp (12) having a reflector (28) whose central heel (37) forms the hot spot and casts light through projector lens (30) to generate low and/or high beam patterns. Present lamp capsules (212) give increased photometric intensity over conventional lamps in low beam at critical driver's lane (0.6D, 1.3R) and (0.86D, V) test points, and in high beam at the critical (H,V) test point.

Abstract: A component includes a carrier with a mold body made of an electrically insulating plastic material and a metal layer, wherein the metal layer includes a first subregion and a second subregion, and at least one of the subregions extends in a vertical direction through a mold body to electrically contact a semiconductor body, and the first and second segments are spatially separated from one another in a lateral direction and electrically conductively connect to one another via a connecting structure, wherein the connecting structure, the first subregion and the second subregion adjoin the mold body and are arranged on the same side of the semiconductor body.

Abstract: An optoelectronic component includes an active zone that generates electromagnetic radiation, wherein the electromagnetic radiation is guided in a guide plane, the electromagnetic radiation is output essentially in the guide plane, the active zone emits stray radiation laterally with respect to the guide plane, an electrical contact pad is provided, the contact pad is arranged outside the guide plane, the contact pad is formed by a surface at least partially covered by a conductive layer, the surface has inclined partial faces, and the electrically conductive layer on at least a subset of the inclined faces of the contact pad is configured to be so thin that electromagnetic stray radiation is emitted via the subset of the inclined faces.

Abstract: A method of setting luminance levels of a solid-state light sources of a luminaire with programmable light distribution is provided. The method includes obtaining a file describing a desired light beam distribution, converting the desired light beam distribution into luminance levels for the solid-state light sources, and applying the luminance levels to the solid-state light sources to cause the luminaire to output the desired light beam distribution.

Abstract: A metal complex of a metal from groups 13 to 16 uses a ligand of the structure (I), where R1 and R2 can independently be oxygen, sulfur, selenium, NH or NR4, where R4 an alkyl or aryl and can be connected to R3.

Abstract: An optoelectronic semiconductor component includes a semiconductor chip having a semiconductor layer sequence including an active region that generates radiation; a radiation exit surface running parallel to the active region; a mounting side surface that fixes the semiconductor component and runs obliquely or perpendicularly to the radiation exit surface and at which at least one contact area for external electrical contacting is accessible; a molded body molded onto the semiconductor chip in places and forming the mounting side surface at least in regions; and a contact track arranged on the molded body and electrically conductively connecting the semiconductor chip to the at least one contact area.

Abstract: Techniques are disclosed for detecting stationary presence using IR sensor data. A number of IR images may be captured based on IR sensor data and these IR images may be averaged over various time intervals to calculate a number of average IR frames. The difference between these average IR frames provides a delta frame. A mask frame may be calculated as the summation of delta frames over time, and the value of the mask frame may be used to detect a stationary human presence even when no delta value is calculated. Alternatively, the mask frame may be used to calculate a background frame that represents the IR signature of stationary or cyclical objects within the scanned area that are not intended to trigger the presence detection system. A stationary presence may be determined by subtracting the background frame from a current average IR frame.

Abstract: Automotive lamp (10), preferably a backup lamp, includes first lamp (12) and plural LEDs (26a-n). The lamp (12) comprises light-transmissive material, first and second opposed end surfaces (16, 18), a source side (20) and an emission side (22) each extending between end surfaces (16, 18), source side (20) facing LEDs (26a-n), and emission side (22) having an aspherical surface facing area to be illuminated (24). The elongated optical lens (14) has a length (L) extending, parallel a first horizontal X-axis, between the end surfaces (16, 18) that is greater than a thickness along second horizontal Z-axis and a height along vertical Y-axis (X-, Y-, and Z-axes being mutually orthogonal). Elongated optical lens (14) defines focus line segment (FS) extending parallel the X-axis, and preferably bends LED light below a horizontal XZ plane, i.e. back towards source side (20).

Abstract: An optoelectronic lighting device includes a carrier, a plurality of light-emitting optoelectronic components arranged on an upper side of the carrier, and at least one layer of a hydrophobic aerogel that protects the plurality of light-emitting optoelectronic components from influences of moisture. A video wall module includes the optoelectronic light device. A signal transmitter for a light signaling installation includes the optoelectronic light device.

Abstract: A light-emitting component is provided including a functional layer stack having at least one light-emitting layer which is set up to generate light during the operation of the component, a first electrode and a second electrode, which are set up to inject charge carriers into the functional layer stack during operation, and an encapsulation arrangement having encapsulation material, which is arranged above at least one of the electrodes and the functional layer stack. At least one of the electrodes is transparent and contains a wavelength conversion substance and/or the encapsulation material is transparent and contains a wavelength conversion substance.

Abstract: An illumination apparatus for providing light and for illuminating an illumination plane with a rectangular light distribution is provided. The illumination apparatus includes at least one light source configured to generate light, a collimation optical unit configured to collimate the light, a condenser optical unit configured to shape a rectangular angular distribution of the light coming from the collimation optical unit, and a freeform optical unit having at least one freeform area for modifying the angular distribution such that a rectangular light distribution is produced in an illumination plane that is optically connected downstream.

Abstract: A method of forming one or more three-dimensional objects for an optoelectronic lighting device including a carrier with an optoelectronic semiconductor component includes providing a carrier of an optoelectronic lighting device, wherein an optoelectronic semiconductor component is arranged on the carrier, and a construction region partly delimited by the carrier is defined, the optoelectronic semiconductor component facing the construction region, introducing a polymerizable liquid into the construction region, and exposing the construction region to form one or more solid polymers from the polymerizable liquid in a curing zone included by the construction region, and one or more three-dimensional objects from the one or more solid polymers in the curing zone, wherein an ineffective region is formed during the process of exposing the construction region, polymerization being inhibited in the ineffective region, and the curing zone is arranged between the carrier and the ineffective region.

Abstract: Techniques are disclosed for detecting changes in occupancy as well as the number of occupants within an area. Detection of one or more occupants entering or leaving the area may be accomplished using a sensor having a quantity of pixels. The pixels may be configured to receive thermal energy emitted from one or more objects present in the area, including from one or more occupants. In response to receiving the emitted thermal energy, the sensor may be configured to create thermal images of the area. These thermal images may include a plurality of thermal intensity values associated with one or more pixels of the sensor. Two or more thermal images can be compared to identify a change in thermal intensity values. A change in the occupancy of the area may be determined by based on the identified change in thermal intensity values.

Abstract: A radiation-emitting semiconductor component and a method for producing a plurality of semiconductor components are disclosed. In an embodiment the component includes a semiconductor chip comprising a semiconductor layer sequence, a front side and a rear side opposite the front side, and a molded body molded on to the semiconductor chip at least in some places. The component further includes a thermal connector located on a rear side of the semiconductor component, wherein the rear side of the semiconductor component is opposite the front side of the semiconductor chip, wherein the thermal connector extends to the rear side of the semiconductor chip, wherein at least one electrical connection surface is located on the front side of the semiconductor chip, and wherein the at least one electrical connection surface is electrically-conductively connected to an electrical contact surface of the semiconductor component via a contact path running on the molded body.

Abstract: A rectifying circuit is provided, which includes a first channel circuit, a comparator circuit, and a second channel circuit. The first channel circuit rectifies a first input signal using a transistor that is coupled between an input of the first channel circuit and a node. The comparator circuit is coupled with the transistor and controls it based on a difference between a representative voltage of the first input signal and a representative voltage of the node. The second channel circuit rectifies a second input signal using a diode coupled between an input of the second channel circuit and the node. The transistor may be a first MOSFET and the comparator circuit may be coupled with the first MOSFET by way of a second MOSFET. The second MOSFET controls the first MOSFET and is itself controlled by the comparator circuit.

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

Abstract: A solar concentrator module (80) employs a luminescent concentrator material (82) between photovoltaic cells (86) having their charge-carrier separation junctions (90) parallel to front surfaces (88) of photovoltaic material 84 of the photovoltaic cells (86). Intercell areas (78) covered by the luminescent concentrator material (82) occupy from 2 to 50% of the total surface area of the solar concentrator modules (80). The luminescent concentrator material (82) preferably employs quantum dot heterostructures, and the photovoltaic cells (86) preferably employ low-cost high-efficiency photovoltaic materials (84), such as silicon-based photovoltaic materials.