Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, —E=Eu, Ce, Yb and/or Mn, XC=N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; 3.5?u?4; 3.5?v?4; (?0.2)?w?0.2 and 0?m<0.

Abstract: A power-supply circuit may include a current generator configured to generate a regulated current. The current generator may include a switching stage, a current sensor, and a regulation circuit configured for driving the switching stage as a function of a feedback signal supplied by the current sensor. The power-supply circuit may further include an electronic switch configured to shortcircuit selectively the output of the current generator as a function of a drive signal, and a control circuit configured to generate the drive signal for opening or closing selectively the electronic switch. In particular, the current generator is configured to activate or de-activate generation of the regulated current as a function of an enable signal, and the control circuit is configured to generate the enable signal and the drive signal in such a way as to synchronize the ripple in the regulated current with the further drive signal.

Abstract: A lighting device provides a pump light unit for emitting pump light, a phosphor element for generating conversion light in response to excitation by the pump light, and a wavelength-dependent beam splitter which is reflective to the pump light and transmissive to the conversion light. The first pump light portion is incident on a light incidence surface of the beam splitter and is reflected from the beam splitter to the phosphor element. The element emits the conversion light in response to the excitation by the pump light. The conversion light is likewise incident on the light incidence surface, but transmitted by the beam splitter and exiting at a light exit surface of the beam splitter opposite the light incidence surface. Concurrently, the second pump light portion, reflected from the beam splitter, is directed onto the light exit surface of the beam splitter and is superposed with the conversion light.

Abstract: A lens and a flash are disclosed. In an embodiment a lens includes a light entrance side having a plurality of Fresnel elements, a light exit side having a plurality of exit lenses having a second focal length and an optical axis, wherein the Fresnel elements and the exit lenses are optically associated with one another in a one-to-one manner, wherein each Fresnel element has an entrance surface which is convex in shape and which forms an entrance lens having a first focal length, wherein each Fresnel element has a deflection surface arranged directly downstream of the entrance surface, wherein the deflection surface is configured to deflect the light which entered the lens through the entrance surface by total internal reflection towards an associated exit lens, and wherein, with a tolerance, each entrance surface and the associated exit lens are located in the interrelated focal points.

Abstract: A lens includes a base body having a light incidence face through which light can enter the base body and a light exit face, through which light which has entered the base body can emerge, the light exit face includes a microlens structure having a plurality of microlenses, the light incidence face has at least two collimator segments that collimate light and a light entry region formed differently from the collimator segments, the base body has at least two back-reflection regions respectively assigned to one of the two collimator segments, to reflect back light collimated by a corresponding collimator segment, in a direction of the corresponding collimator segment, and the base body is a reflection region to reflect light that has entered through the light incidence region in the direction of the microlens structure so that the reflected light can emerge from the base body through the microlens structure.

Abstract: Wavelength converters (103) with improved thermal conductivity are described. In some embodiments the wavelength converters include a thermally conductive component (204, 206) and a wavelength conversion material (205) mixed with or dispersed in the thermally conductive component. The wavelength conversion material (205) includes non-agglomerated quantum dots. The presence of the thermally conductive component may facilitate removal of heat from the wavelength converter, potentially reducing the impact of elevated temperature on the performance of the wavelength conversion material therein. Methods of making such wavelength converters and lighting devices including such wavelength converters are also described.

Abstract: A method for producing a plurality of components and a component are disclosed. In an embodiment the method includes providing a carrier composite comprising a base body and a planar connecting surface, providing a wafer composite comprising a semiconductor body composite and a planar contact surface, connecting the wafer composite to the carrier composite thereby forming a joint composite so that the planar contact surface and the planar connecting surface are joined forming a joint boundary surface. The method further includes reducing inner mechanical stress in the joint composite so that a material of the carrier composite is removed in places, wherein the joint composite is thermally treated in order to form a permanent mechanically-stable connection between the wafer composite and the carrier composite, and wherein reducing inner stress is effected prior to the thermal treatment.

Abstract: An optoelectronic semiconductor chip and a method for manufacturing an optoelectronic semiconductor chip are disclosed. In an embodiment the semiconductor chip includes a semiconductor body having a main surface and at least one side surface arranged transversely to the main surface, a contact layer arranged on the main surface of the semiconductor body and containing an electrically conductive material, a filter layer arranged on the contact layer and containing a dielectric material and a conductive layer arranged on the filter layer and containing an electrically conductive material, wherein a thickness of the conductive layer is greater than a thickness of the contact layer, wherein the contact layer and the conductive layer comprise a transparent electrically conductive oxide, and wherein the filter layer is multi-layered and comprises at least two sublayers which differ in their refractive index.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.

Abstract: In one embodiment, an optoelectronic component includes a semiconductor chip, which is able to emit radiation. A conversion element comprises at least one wavelength converting phosphor dispersed in a matrix material. The matrix material is a low-melting phosphate glass and water resistant. The optoelectronic component emits in operation warm white light.

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence composed of AlInGaN comprising an n-conducting n-region, a p-conducting p-region and an intermediate active zone having at least one quantum well for generating a radiation, wherein the p-region comprises an electron barrier layer, a contact layer and an intermediate decomposition stop layer, the contact layer being directly adjacent to a contact metallization, wherein the decomposition stop layer comprises an aluminum content of at least 5% and at most 30% in places, wherein an intermediate region arranged between the electron barrier layer and the decomposition stop layer has a thickness between 2 nm and 15 nm inclusive, the intermediate region being free of aluminum, and wherein the aluminum content in the decomposition stop layer varies and increases on average in a direction towards the contact layer.

Abstract: A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the component includes a light transmissive carrier, a semiconductor body disposed on the light transmissive carrier, the semiconductor body including a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body includes a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the carrier and a contact structure including a first contact area and a second contact area arranged on the second main surface, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the contact structure comprises a via extending from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer.

Abstract: The invention relates to a method for producing a nitride semiconductor component (100), comprising the steps of: —providing a growth substrate (1) having a growth surface (10) formed from a planar area (11) with a plurality of three-dimensionally shaped surface structures (12) on said planar area (11), —growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), growth beginning selectively on a growth area (13) of said growth substrate, and the growth area (13) being less than 45% of the growth surface (10). The invention also relates to a nitride semiconductor component (100) which can be produced according to said method.

Abstract: There is herein described a method of making a single crystal wavelength conversion element from a polycrystalline wavelength conversion element, a single crystal wavelength conversion element, and a light source containing same. By making the single crystal wavelength conversion element from a polycrystalline wavelength conversion element, the method provides greater flexibility in creating single crystal wavelength conversion elements as compared to melt grown methods for forming single crystals. Advantages may include higher activator contents, forming more complex shapes without machining, providing a wider range of possible activator gradients and higher growth rates at lower temperatures.

Abstract: The individual configuration of beacons in lighting systems is to be simplified. Therefore, a lighting system with a lighting device and a beacon arranged in or at the lighting device is provided. The lighting system comprises a sensor device for acquiring an environmental parameter relating to an environment of the lighting system. Moreover, the beacon is formed to automatically configure itself based on the environmental parameter.

Abstract: Systems and methods disclosed herein includes a measurement device to enable dimensional metrology and/or 3D reconstruction of an object. The measurement device is positioned between the object and reference luminaires (e.g., light emitting diodes or other light sources). The measurement device uses the reference luminaires to determine the position and orientation of the measurement device. The measurement device may include a camera oriented towards the reference luminaires and may acquire/use images of reference luminaires to determine the position and orientation of the measurement device. Using the reference luminaires, the system may determine positions and orientations of the measurement device when the images of the reference luminaires are taken. The system may be configured to use the positions and the orientations of the measurement device to determine dimensions and/or 3D models of the object.

Abstract: Methods and systems are described that enable the simultaneous control of lux, correlated color temperature (CCT), and circadian light (CL) emitted by a lighting system. Aspects also include methods for the adjusting the lux, CCT, and CL with respect to the needs and/or desires of a user, including to provide optimal lighting for light related health. Aspects of the present disclosure also include user interfaces for the simultaneous knowledge and control of lux, CCT, and CL.

Abstract: A method of setting luminance levels of a solid-state light sources of a luminaire with programmable light distribution is provided. The method includes obtaining a file describing a desired light beam distribution, converting the desired light beam distribution into luminance levels for the solid-state light sources, and applying the luminance levels to the solid-state light sources to cause the luminaire to output the desired light beam distribution.

Abstract: A method of setting luminance levels of a solid-state light sources of a luminaire with programmable light distribution is provided. The method includes obtaining a file describing a desired light beam distribution, converting the desired light beam distribution into luminance levels for the solid-state light sources, and applying the luminance levels to the solid-state light sources to cause the luminaire to output the desired light beam distribution.