Abstract: An example lamp optic comprises a light guide (100) to receive light from a light source (108) and generate a light beam via internal reflection. The light guide includes a proximal end (104) to receive the light and a distal end (106) to emit the light beam. An optical axis (OA) extends from the proximal end to the distal end, and a transverse axis (TA) extends perpendicular to the optical axis. A surface of the distal end has a stepped portion (110) including a central surface (112) substantially parallel to the transverse axis and centered on the optical axis, and linear steps (114) extending in opposing directions from the central surface parallel to the transverse axis and along the optical access towards the distal end. Each linear step includes an optical face (116) extending perpendicular to the optical axis and a transverse face (118) extending perpendicular to the transverse axis.

Abstract: A luminaire having an electronically adjustable light beam distribution is disclosed. In accordance with some embodiments, the disclosed luminaire includes a housing, for example, of hemi-cylindrical, oblate hemi-cylindrical, oblong elliptical, or polyhedral shape. The disclosed luminaire also includes a plurality of solid-state light sources arranged over its housing, in accordance with some embodiments. The one or more solid-state emitters of a given solid-state light source may be addressable individually and/or in one or more groupings, in some embodiments. As such, the solid-state light sources can be electronically controlled individually and/or in conjunction with one another, providing for highly adjustable light emissions from the host luminaire, in accordance with some embodiments. One or more heat sinks may be mounted on the housing to assist with heat dissipation for the solid-state light sources.

Abstract: A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. In an embodiment, the conversion lamina includes a base material and a conversion substance embedded in the base material, wherein the conversion lamina has a thickness between 60 ?m inclusive and 170 ?m inclusive.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.

Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

Abstract: An optoelectronic circuit includes at least one first and second light emitting diodes; a switch arrangement connected between the first and second diodes and configured to switch over the first and second diodes between series and parallel circuits depending on a predefined ambient parameter; and a current matching circuit for matching the currents through the first and second diodes in case of parallel connection. The current matching circuit includes a current mirror circuit, including first and second current mirror transistors connected via its collector terminal to the first/second diodes, respectively. The arrangement includes a diode/a switch for connecting the first diode in series with the second diode and is configured to form the series circuit including the first and second diodes while bypassing the current matching circuit so that, in case of series connection, the first transistor is switched in a high-resistance fashion and the second transistor is short-circuited.

Abstract: An organic electronic component includes a substrate and a first electrode arranged on the substrate, and at least one organic functional layer arranged on the first electrode. The organic functional layer includes a matrix material into which a p-dopant has been introduced and a second electrode arranged on the organic functional layer. The p-dopant includes a copper complex having at least two ligands. Each ligand has a benzene unit with six carbon atoms. With respect to each ligand, an iminium group is linked directly as a substituent to one of the six carbon atoms of the benzene unit, and an oxygen is bound as a substituent to an adjacent carbon atom of the benzene unit, with the oxygen and the benzene unit together forming an aryloxy group. The ligands are coordinated to the copper cation, so that the copper complex has a trans-structure. The organic functional layer is hole-conducting.

Abstract: Various embodiment may relate to a circuit arrangement for operating a load, including an input for inputting a mains input AC voltage, a power converter circuit, a converter circuit which converts the mains input AC voltage rectified by the power converter circuit into an output voltage, a control circuit for controlling the converter circuit, and a linear regulating circuit which sets a predetermined load current at the load. The load current is a direct current with a uniform current intensity. The control circuit controls the converter circuit in such a manner that the current intensity of the load current is reduced when the output voltage is at a minimum.

Abstract: A method of producing optoelectronic semiconductor components includes A) providing a semiconductor layer sequence on a carrier top of a carrier, B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces, C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure, wherein step D) takes place without an additional etching mask for the anisotropic etching.

Abstract: A rectifying circuit is provided, which includes a first channel circuit, a comparator circuit, and a second channel circuit. The first channel circuit rectifies a first input signal using a transistor that is coupled between an input of the first channel circuit and a node. The comparator circuit is coupled with the transistor and controls it based on a difference between a representative voltage of the first input signal and a representative voltage of the node. The second channel circuit rectifies a second input signal using a diode coupled between an input of the second channel circuit and the node. The transistor may be a first MOSFET and the comparator circuit may be coupled with the first MOSFET by way of a second MOSFET. The second MOSFET controls the first MOSFET and is itself controlled by the comparator circuit.

Abstract: An electronic component includes a connection carrier having a cover surface, a first electric connection point and a second electric connection point, and an organic active area. A first electrode interconnects in an electrically conductive manner the active area and the first electric connection point. An encapsulation layer protects the active area against humidity and atmospheric gases. The electronic component can be contacted from the outside by the electric connection points and the encapsulation layer is in direct contact, in places, with the connection carrier.

Abstract: A controller for accessing a network of lighting system devices, the controller comprising: a communication subsystem configured to allow the controller to be identified as a node on the network, and to communicate according to a first protocol with at least one of said lighting system devices on the network; wherein the controller is configured to detect the presence of a Master lighting system device on the network via the first protocol; wherein the controller is configured to assume a role based on the detection.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation including a wavelength from a first spectral range, a wavelength-converting element configured to convert electromagnetic radiation including a wavelength from the first spectral range into electromagnetic radiation including a wavelength from a second spectral range, and a reflective element including a first reflectivity in the first spectral range and a second reflectivity in the second spectral range, wherein the first spectral range is below 1100 nm, and the second spectral range is above 1200 nm.

Abstract: An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a covering layer forming a radiation passage surface of the semiconductor body on a side facing away from the active region, the semiconductor region has a current-spreading layer arranged between the covering layer and the active region; the semiconductor device has a contact for the electrical contacting of the semiconductor region; the contact adjoins the current-spreading layer in a terminal area; the contact adjoins the covering layer in a barrier region; and the barrier region runs parallel to the active region and is arranged closer to the active region than the radiation passage surface.

Abstract: Techniques and architecture are disclosed for mobile transport systems configured to determine vehicle positions within an area using light-based communication signals. The system includes a plurality of luminaires located in an area and configured to transmit luminaire position data recognizable by a sensor disposed on a vehicle. The sensor receives an image of a luminaire including a light-based communication signal encoded with luminaire position data. Luminaire position data can be combined with luminaire layout information to determine a known location of the luminaire. A vehicle position relative to the known luminaire location can be determined based on mathematical relationships. Vehicle orientation relative to the area can be determined based an asymmetric fiducial pattern or multiple known luminaire locations. The system can combine a vehicle position relative to a known luminaire location with vehicle orientation relative to the area to determine a vehicle position relative to the area.

Abstract: Techniques are disclosed for measuring an amount of flicker produced by a light source. In one embodiment, a flicker measuring device includes a photo sensor to measure the amount of light produced by the light source, a dedicated processor to receive and process data from the photo sensor, a memory bus coupled to an analog-to-digital converter (ADC) and to a first memory, and a direct memory access (DMA) bus coupled to the ADC and to a second memory. In another embodiment, a flicker measuring system uses a light sensor, an associated circuit and a portable computing device (PCD), such as a smart phone, to measure an amount of flicker produced by a light source by sending an electrical signal from the light source and associated circuit via an audio output to an audio sub-system of the PCD, so that the PCD may calculate the flicker value.

Abstract: Various embodiments disclosed herein include a method for determining the position of a computing device. The method may include obtaining, by the computing device, an image of a subset of luminaries from a plurality of luminaires located in an indoor environment, in which each subset grouping of luminaires in the plurality of luminaires is uniquely identifiable. The computing device may then compare the subset of luminaires to a database storing each uniquely identifiable subset grouping of luminaires in the plurality of luminaires, in which the database includes position information for each luminaire in the plurality of luminaires, and determine the position of the computing device based on the comparison of the subset of luminaries to the database.

Abstract: According to the present disclosure, an organic light-emitting diode device is disclosed with an organic light-emitting diode having a first main surface and a second main surface lying opposite the first main surface, an optically functional device having a first hollow space and a second hollow space, and a control element. The first hollow space is arranged on or over the first main surface, and the second hollow space is arranged below the second main surface. The first hollow space and the second hollow space are connected to one another by means of a fluid connection. An optically functional fluid is arranged in the optically functional device. The control element is configured to move the optically functional fluid to and fro between the first hollow space and the second hollow space.

Abstract: A method of detaching a growth substrate from a layer sequence includes introducing at least one wafer composite into an etching bath containing an etching solution such that the etching solution is located at least in regions within separating trenches, repeatedly varying a pressure of a base pressure prevailing in the etching bath with at least one pressure variation device, and detaching the growth substrate, wherein at least one of 1-3 is satisfied: 1) a buffer chamber attached to the etching bath and connected thereto is provided and the volume variation is effected by a movement of a piston or hydraulic plunger introduced into the buffer chamber, 2) the volume variation is at least partly effected with a compressor attached to the etching bath, and 3) the pressure variation is at least partly effected by at least one of removal of a gas and a liquid from the etching bath or by addition of at least one of the gas and the liquid thereto.