Abstract: An optoelectronic semiconductor device may include a plurality of picture elements, each of which include a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type arranged one above the other to form a semiconductor layer stack. The optoelectronic semiconductor device further includes separating elements arranged between adjacent picture elements and extend in a horizontal direction along a boundary of the adjacent picture element, adjoin the first and the second semiconductor layers, respectively, and extend in the vertical direction through the first and the second semiconductor layers, respectively.

Abstract: A circuit for sensing radiation with high sensitivity is disclosed. The circuit comprises a first transistor configurable to reset a voltage-level at a circuit node to a voltage reference. The circuit also comprises measurement circuitry configured to measure the voltage-level at the circuit node, and at least one photodiode configured to vary the voltage-level at the circuit node in response to radiation incident upon the photodiode during an integration period. The circuit also comprises processing circuitry configured to control the first transistor to reset the voltage-level at the circuit node and to subsequently configure the measurement circuitry to measure the voltage-level at a start and at an end of the integration period.

Abstract: An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.

Abstract: In at least one embodiment of the method of operating a laser device (100) having a plurality of laser diodes (1) which can be controlled independently of one another, wherein controlled laser diodes are each operated with an operating current (I), and wherein each laser diode can be operated for a proper operation in a nominal current range (?I), a step A) is carried out in which an input current (I_0) or an input voltage (U_0) is applied to the laser device. Furthermore, a step B) is carried out in which a characteristic value is determined that is representative of a number N of laser diodes that can be operated in the respective nominal current range with the input current applied in step A) or with the input voltage applied in step A). If the characteristic value is representative of N?1, M laser diodes are controlled in a step C) in such a way that the M laser diodes are each operated in the nominal current range, wherein 1?M?N is selected.

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Abstract: The invention relates to an optoelectronic component comprising a carrier, an optoelectronic semiconductor chip arranged on the upper side of the carrier, and a frame which is arranged on the upper side of the carrier and which frames the optoelectronic semiconductor chip. An underside of the frame, which faces the upper side of the carrier, has at least one recess. In a spatial area framed by the frame on the upper side of the carrier, there is arranged a potting material which is in contact with the frame and at least partly fills the recess in the frame.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

Abstract: In an embodiment, an optoelectronic device includes a carrier, at least one optoelectronic semiconductor component arranged on an upper side of the carrier and at least one light channel associated with the optoelectronic semiconductor component which extends between a first end of the light channel which is distant from a light-active surface of the semiconductor component and which includes an opening into the outer space and a second end of the light channel including an opening directed towards the light-active surface of the semiconductor component, wherein the at least one light channel extends between its respective first and second ends in a non-rectilinear manner, wherein the light channel includes a cavity extending between the two ends, wherein an inner wall surrounds the cavity, and wherein at least a section of the inner wall is reflective.

Abstract: An optoelectronic device is specified including emitters, each emitter configured to emit electromagnetic radiation, and an assigned receiver for each emitter, configured to receive at least part of the electromagnetic radiation emitted by the emitter, wherein the emitters are configured to be operated with an input voltage, each receiver is configured to provide at least part of an output voltage, each emitter is physically connected to the assigned receiver.

Abstract: In an embodiment an optoelectronic semiconductor component includes a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of AlxGa1-xN composition, with 0.3?x?0.95, a second semiconductor layer of a p-conductivity type, an active zone between the first semiconductor layer and the second semiconductor layer, the active zone including a quantum well structure and an intermediate layer between the first semiconductor layer and the active zone, wherein the intermediate layer includes a semiconductor material of AlyGa1-yN composition, with x*1.05?y?1, and wherein the intermediate layer is located directly adjacent to the active zone.

Abstract: The invention relates to a detector element which has the following features: an epitaxial semiconductor layer sequence including at least two active layers which are designed to absorb electromagnetic radiation with a wavelength L1, wherein the epitaxial semiconductor layer sequence has a first main surface and a second main surface lying opposite the first main surface, each surface being designed to couple in and couple out electromagnetic radiation, and at least three electric connection contacts which are designed to electrically contact the active layers, an electric connection contact being arranged between two active layers. The invention additionally relates to a lidar module and to a method for operating a lidar module.

Abstract: An optoelectronic device is specified, said device including a emitter configured to emit electromagnetic radiation having two or more peak wavelengths and to be operated with an input voltage, and a receiver configured to receive the electromagnetic radiation and to provide an output voltage.

Abstract: The invention relates to an optoelectronic component including an electrically conductive first contact layer located on a carrier substrate, an electrically conductive platform that is located on the first contact layer and is formed integrally therewith, at least one laser diode that is located on the platform and is electrically connected thereto, and an electrically conductive second contact layer which is electrically coupled to the at least one laser diode. The height of the platform is such that the laser facet of the at least one laser diode is at such a vertical distance from the carrier substrate that a light cone emitted by the laser diode through the laser facet does not strike the carrier substrate within a predefined horizontal distance from the laser facet.

Abstract: The invention relates to an edge-emitting semiconductor laser diode, including the following features: an epitaxial semiconductor layer stack including an active one, in which during operation electromagnetic radiation is generated, wherein the epitaxial semiconductor layer stack has at least one facet which laterally delimits the epitaxial semiconductor layer stack, and the facet has at least one first partial surface and at least one second partial surface which have reflectivities differing from one another for the electromagnetic radiation generated in the active zone. The invention also relates to methods for producing a plurality of edge-emitting semiconductor laser diodes.

Abstract: The invention relates to an optoelectronic assembly including at least two semiconductor laser components, which are designed to emit electromagnetic radiation, and an optical superpositioning element with at least one radiation inlet surface and a radiation outlet surface. Each semiconductor laser component is paired with a respective optical element, and each semiconductor laser component emits an inlet beam bundle or a plurality of spatially separated inlet beam bundles. All of the inlet beam bundles of a semiconductor laser component pass through the respective paired optical element, wherein a plurality of inlet beam bundles emitted by a semiconductor laser component are fanned out relative to each other after passing through the optical element such that the inlet beam bundles enter the optical superpositioning element at different inlet angles.

Abstract: The invention relates to a device for irradiating a liquid with electromagnetic radiation, in particular for sterilizing an in particular flowing liquid by means of UV radiation (UV reactor), comprising a container having an inlet for receiving the liquid and having an outlet for releasing the liquid from the container, wherein within the container a variable or adjustable irradiation zone is provided for irradiating the liquid with electromagnetic radiation, in particular UV radiation, emitted by a radiation source. In the irradiation zone the liquid is configured in the form of a liquid layer having the layer thickness which extends between the underside of the container and a gas bubble expanding above the liquid layer.

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.

Abstract: The invention relates to an optoelectronic lighting device comprising a carrier, in particular a lead frame, at least one light emitting semiconductor element which is arranged on the carrier and is configured to emit pulsed light in a wavelength range, in particular in the infrared wavelength range, a first mold compound which is substantially transparent for the wavelength range and covers at least one light emitting region of the semiconductor element; and a second mold compound which is substantially transparent for the wavelength range and which is adjacent to the first mold compound when viewed in an emission direction of the semiconductor element. The first mold compound comprising a higher temperature resistance than the second mold compound.

Abstract: A quantum dot material may include a quantum dot having at least two ligand where each ligand includes a first and a second functional group bound to each other by a bridge. The bridge may include a system of conjugated double bonds. In at least one ligand, the second functional group may have an electron transport structure. In at least one ligand, the second functional group may have a hole transport structure.