Abstract: A decoding method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: receiving a read command for reading first data; obtaining a current first temperature of a rewritable non-volatile memory module according to the read command; obtaining a second temperature of the rewritable non-volatile memory module of writing the first data to a first physical programming unit according to the read command; and selecting a first decoding operation according to the first temperature and the second temperature and executing the first decoding operation.

Abstract: The invention provides a memory management method, a memory storage device, and a memory control circuit unit. The method includes: recording an error bit number of each upper physical programming unit and an error bit number of each lower physical programming unit of each of the physical erasing units; determining whether a first physical erasing unit is a bad physical erasing unit according to distributions of the error bit numbers of the upper physical programming units and the lower physical programming units of the first physical erasing unit of the physical erasing units; and performing a data transfer operation on data in the first physical erasing unit if the first physical erasing unit is determined as the bad physical erasing unit.

Abstract: A decoding method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: receiving a read command for reading first data; obtaining a current first temperature of a rewritable non-volatile memory module according to the read command; obtaining a second temperature of the rewritable non-volatile memory module of writing the first data to a first physical programming unit according to the read command; and selecting a first decoding operation according to the first temperature and the second temperature and executing the first decoding operation.

Abstract: A data writing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: obtaining a data; encoding a plurality of sub-data in the data to obtain a plurality of first error checking and correction codes respectively corresponding to the plurality of sub-data; writing the plurality of sub-data and the plurality of first error checking and correction codes into a first physical programming unit; encoding the plurality of sub-data to obtain a second error checking and correction code; and writing the second error checking and correction code into a second physical programming unit.

Abstract: A decoding method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: reading a first physical programming unit by using a first read voltage to obtain first data; determining whether a first ratio of a first quantity of a first bit value and a second quantity of a second bit value in the first data is greater than a threshold; when the first ratio is not greater than the threshold, performing a decoding operation according to the first data to generate first decoded data and outputting the first decoded data; and when the first ratio is greater than the threshold, not performing the decoding operation according to the first data.

Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: reading first data from a first memory cell of the rewritable non-volatile memory module by a first read voltage level; decoding the first data by a decoding circuit; reading second data from the first memory cell by a second read voltage level; obtaining reliability information according to a first data status of the first data and a second data status of the second data, and the first data status and the second data status reflect that a first bit value of the first data is different from a second bit value of the second data; and decoding the second data by the decoding circuit according to the reliability information.

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The data writing method includes transmitting a command to a host system to obtain a plurality of data, wherein the plurality of data are arranged in a sequence order in the host system, obtaining first data among the plurality of data and obtaining second data after obtaining the first data. The method further includes writing the first data to a corresponding physical page on a first word line among a plurality of word lines, and writing the second data to another corresponding physical page on a second word line among the plurality of word lines, wherein the first and second word lines belong to first and second memory sub-modules, and the first data and the second data are discontinuously arranged in the sequence order. The first and second data may each comprise sub-data, and the sub-data may be written into physical pages on the first and second word lines.

Abstract: A voltage adjusting method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit in a first physical programming unit group to obtain first data; correcting the first data according to a first error check and correction code corresponding to the first data to obtain first corrected data; reading a second physical programming unit in the first physical programming unit group to obtain second data; and adjusting a first read voltage for reading a first memory cell to a second read voltage according to the first data, the first corrected data, and the second data.

Abstract: A memory management method for a rewritable non-volatile memory module, a memory control circuit unit and a memory storage apparatus are provided. The rewritable non-volatile memory module includes a plurality of super physical units, and the super physical units at least include a plurality of good super physical units and a plurality of partial good super physical units. The method includes: receiving a host write command; selecting a first super physical unit set according a number rate of the good super physical units and the partial good super physical units, and the first super physical unit set includes a plurality of first good super physical units and at least one first partial good super physical unit selected from the super physical units according to the number rate; and writing data into the good physical erasing units of the first super physical unit set, in response to the host write command.

Abstract: A data sampling circuit module, a data sampling method and a memory storage device are provided. The method includes: receiving a differential signal and generating an input data stream according to the differential signal; sampling a clock signal according to a plurality of turning points of the input data stream and outputting a sampling signal; and outputting a bit data stream corresponding to the input data stream according to the sampling signal.

Abstract: A memory control method for a rewritable non-volatile memory module including a plurality of physical units is provided according to an exemplary embodiment of the disclosure. The method includes: reading first data from a first physical unit of a rewritable non-volatile memory module; decoding the first data by a decoding circuit; updating reliability information according to the decoded first data; reading second data from a second physical unit of the rewritable non-volatile memory module; and decoding the second data by the decoding circuit according to the updated reliability information.

Abstract: A data transmitting method, a memory storage device and a memory control circuit unit are provided. The method is used for a data transmitting operation between the memory storage device and a host system. The host system is recorded with a plurality of submission queues, and the method includes: obtaining at least one first command in a first submission queue from the host system and determining whether a first data quantity of the at least one first command matches a first predetermined condition; obtaining at least one second command in a second submission queue from the host system if the first data quantity matches the first predetermined condition; and sequentially performing a data accessing operation corresponding to the at least one first command and the at least one second command on a rewritable non-volatile memory module in the memory storage device.

Abstract: A circuit board assembly including a circuit board and a connector is provided. The circuit board has a plate body, at least one electrical connecting hole, and at least one pad, wherein the pad and the electrical connecting hole are disposed on the plate body, the electrical connecting hole is located in a range of the pad, and the electrical connecting hole penetrates through the pad. The connector has at least one pin, wherein the connector is assembled to the circuit board, the pin is soldered onto the pad, and the pin covers the electrical connecting hole located in the range of the pad. A storage device is also disclosed.

Abstract: A mapping table updating method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: calculating a plurality of updated data counts of a plurality of updated logical units in at least one active physical erasing unit respectively according to a physical-logical mapping table; selecting a first updated logical unit from a plurality of updated logical units according to the plurality of updated data counts, and the number of the first updated logical unit is less than the number of the plurality of updated logical units; loading a first logical-physical mapping table corresponding to the first updated logical unit; and updating mapping information in the first logical-physical mapping table according to mapping information of the first updated logical unit in the physical-logical mapping table.

Abstract: A data merge method for a rewritable non-volatile memory module including a plurality of physical units is provided according to an exemplary embodiment of the disclosure. The method includes: obtaining a first logical distance value between a first physical unit and a second physical unit among the physical units, and the first logical distance value reflects a logical dispersion degree between at least one first logical unit mapped by the first physical unit and at least one second logical unit mapped by the second physical unit; and performing a data merge operation according to the first logical distance value, so as to copy valid from a source node to a recycling node.

Abstract: A data storing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: receiving a first data; determining whether a wear degree value of a rewritable non-volatile memory module is less than a threshold; if the wear degree value of the rewritable non-volatile memory module is less than the threshold, storing the first data into the rewritable non-volatile memory module by using a first mode; and if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, storing the first data into the rewritable non-volatile memory module by using a second mode. A reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.

Abstract: A decoding method, a memory control circuit unit, and a memory storage device are provided. The method includes: configuring a plurality of read voltage categories, wherein the read voltage categories respectively have a plurality of representative read voltage sets; reading a first physical programming unit according to the representative read voltage sets and executing a decoding operation to obtain a plurality of decoded information; choosing a first read voltage category according to the plurality of decoded information; and reading the first physical programming unit according to the first read voltage sets in the first read voltage category and executing the decoding operation.

Abstract: An exemplary embodiment of the present disclosure provides a reference clock signal generation method for a memory storage device. The method includes: receiving a first type signal from a host system; generating a first control parameter according to a frequency of the first type signal; receiving a second type signal from the host system after the first type signal is received; generating a second control parameter according to a frequency of the second type signal; and generating a reference clock signal meeting a first condition according to the second control parameter. Therefore, an efficiency of generating the reference clock signal can be improved.

Abstract: An integrated circuit and a code generating method are described. The integrated circuit includes a plurality of field effect transistors, a plurality of sense-amplifiers, and a processing circuit. Each field effect transistor is configured to represent an address in a mapping table and includes a source, a drain, a channel and a gate. Each sense-amplifier is connected to the drain and configured to sense an electric current from the drain and identify a threshold voltage of the corresponding field effect transistor. The processing circuit is configured to categorize each of the threshold voltages identified by the corresponding sense-amplifiers into a first state and a second state and mark the state of each of the threshold voltages at the corresponding address in the mapping table.

Abstract: A bit determining method, a memory control circuit unit and a memory storage device are provided. The method includes: reading a first storage state of a first memory cell to obtain a first value of a first significant bit; reading the first storage state of the first memory cell to obtain at least one second value of at least one second significant bit; performing a first decoding operation according to the at least one second value to obtain at least one third value of the decoded second significant bit; determining whether the first significant bit is a special bit according to the first storage state and a second storage state corresponding to the at least one third value; and if the first significant bit is the special bit, performing a corresponding decoding operation.