Abstract: A method and apparatus is provided for using a renewable source of energy such as solar, wind or geothermal energy. The method includes generating electric energy from a renewable form of energy at a plurality of locations at which reside an electric power line associated with an electric power grid. The electric energy generated at each location is transferred to the electric power line to thereby supply electric energy to the electric power grid.
Abstract: There are provided a signal transmission device capable of improving a production efficiency and reducing a production cost, and a manufacturing method thereof. A spacer 4 is interposed between peripheral surface portions 101a of optical waveguides 101 exposed by an optical waveguide exposure section 5 and a rear surface 115 of an optical module substrate 105. A height of the spacer 4 alone allows an optical element 103 of the optical module substrate 105 to be positioned so high that this optical element 103 can actually face optical waveguide end surfaces 109. Therefore, it is not required that the spacer be individually manufactured per signal transmission device. Further, there can be avoided individual length measurements of distances such as a distance L2 between a surface 2a of a base platform 2 and the peripheral surface portions 101a of the optical waveguides 101, or the like.
Type:
Application
Filed:
March 17, 2010
Publication date:
January 5, 2012
Applicants:
The University of Tokyo, Advanced Photonics, Inc.
Abstract: Methods and apparatus are disclosed for maximizing performance of an electronic device, such as a display device. Aspects of the exemplary embodiments include operating the electronic device by adjusting power to the device to maintain a predetermined junction temperature of the device independent of the ambient temperature at which the device is operating.
Abstract: An optical amplifier for amplifying an optical signal (1002), the optical amplifier comprising: an optical fibre, the optical fibre including a doped core, an inner cladding extending substantially radially outwardly from the doped core and an outer cladding extending substantially radially outwardly from the inner cladding; a signal coupler for receiving the optical signal and guiding the optical signal into the doped core; a first pump light source for producing a first pump light having a first power, the first pump light source being optically coupled to the optical fibre at a first location therealong for guiding the first pump light into the inner cladding at the first location; and a second pump light source for producing a second pump light having a second power, the second power being larger than the first power, the second pump light source being optically coupled to the optical fibre at a second location therealong for guiding the second pump light into the inner cladding at the second location; wh
Abstract: A tunable laser cavity for selectively emitting laser light having a first wavelength and a second wavelength using pump light emitted by a pump light source.
Abstract: A fingerprint reader is described. The fingerprint reader includes an illumination source that produces light and a camera. An optical window is also part of the reader. The window is positioned so that light from the illumination source passes through the optical window and then is reflected to the camera for imaging a person's fingerprint. A filter may be positioned on or proximate to the optical window. The filter prevents ambient light from reaching the camera. In some situations, the filter will be a dielectric mirror, a dielectric filter, a holographic mirror, a holographic filter, a dichroic mirror or a dichroic filter.
Abstract: A method of measuring glucose concentration in tissue includes measuring scattering coefficients of the tissue at each of a plurality of temperatures and at a selected tissue depth using optical coherence tomography, and determining the glucose concentration in interstitial fluid of the tissue as a function of the measured scattering coefficients.
Abstract: A micro-bolometer type infrared (IR) sensing device is provided. The IR sensing device includes an absorbed heat discharging part and a sensing structure part formed as bean structure, spaced apart from the absorbed heat discharging part, supported at least at one end on the absorbed heat discharging part, and discharging heat absorbed in the sensing structure part by being elastically deformed and thus touching the absorbed heat discharging part. The sensing structure part includes a sensing part with variation in secondary attribute according to heat and a light-absorbing part formed into one unit with the sensing part in a manner to surround the sensing part as seen in section view, and converting energy of incident photons into heat. The sensing structure part discharges heat absorbed therein by being elastically deformed and thus touching the absorbed heat discharge part spaced apart downward from the sensing structure part.
Type:
Grant
Filed:
January 16, 2009
Date of Patent:
November 22, 2011
Assignees:
Hanvision Co., Ltd., Lumiense Photonics Inc.
Abstract: A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; and a sensing circuit which includes a common mode current providing portion and a current subtraction portion, wherein the common mode current providing portion outputs a common mode current related to a value of a current which is flowing in the sensing portion when there is no incident light and the current subtraction portion outputs subtraction currents for the common mode current and a sensing current related to a current output from the sensing portion.
Type:
Grant
Filed:
November 13, 2008
Date of Patent:
October 18, 2011
Assignees:
Han Vision Co., Ltd., Lumiense Photonics Inc.
Abstract: This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from ultra-violet (UV) to long-Infrared. More particularly, this invention is related to the broadband image sensor (along with its manufacturing technologies), which can detect the light wavelengths ranges from as low as UV to the wavelengths as high as 20 ?m covering the most of the wavelengths using of the single monolithic image sensor on the single wafer. This invention is also related to the integrated circuit and the bonding technologies of the image sensor to standard integrated circuit for multicolor imaging, sensing, and advanced communication. Our innovative approach utilizes surface structure having more than micro-nano-scaled 3-dimensional (3-D) blocks which can provide broad spectral response.
Abstract: Current network switching architectures require communication with a higher level network control plane, which can be slow to reroute communications, resulting in unacceptable losses of communications for customers. Examples embodiments of the present invention reroute communications faster detecting optical power of an optical signal at optical switches coupled via optical communication paths, and causing at least one optical communication path between a first optical switch and second optical switch to switch to an alternative optical communication path, in part, through physical layer triggering in an event optical power at at least one of the first or second optical switches falls below a threshold level. Switching in response to physical layer triggering may result in reduced switching times and, consequently, faster restoration of communications to customers after a network fault interruption.
Abstract: Provided are a method of fabricating a microlens using selective etching of a compound semi-conductor and a method of fabricating a photoelectric device having the microlens. The formation of the microlens includes patterning a compound semiconductor layer and removing a lateral surface of the compound semiconductor layer to form a roughly hemispheric lens. The lateral surface of the compound semiconductor layer is removed by a digital alloy method. In particular, the lateral surface of the compound semiconductor layer is removed by a wet etching process.
Type:
Grant
Filed:
November 28, 2006
Date of Patent:
September 20, 2011
Assignees:
Ytel Photonics Inc., Edith Cowan University
Inventors:
Ki-Soo Chang, Yong-Tak Lee, Alameh Kamal
Abstract: The apparatus and methods herein provide light sources and spectral measurement systems that can improve the quality of images and the ability of users to distinguish desired features when making spectroscopy measurements by providing methods and apparatus that can improve the dynamic range of data from spectral measurement systems.
Abstract: Disclosed herein is a technique for increasing bandwidth for super high speed interconnects. The invention combines an electrical signal with an optical signal to provide a bandwidth greater than is possible with each individual signal.
Abstract: A method is provided for producing a film of compound material. The method includes providing a substrate and depositing a film on the substrate. The deposited film has a first chemical composition that includes at least one first chemical element and at least one second chemical element. At least one residual chemical reaction is induced in the deposited film using a source containing at least one second chemical element to thereby increase the content of at least one second chemical element in the deposited film so that the deposited film has a second chemical composition. The content of at least one second element in the second chemical composition is larger than the content of at least one second element in the first chemical composition.
Type:
Grant
Filed:
March 21, 2011
Date of Patent:
September 6, 2011
Assignee:
Sunlight Photonics Inc.
Inventors:
Sergey Frolov, Allan James Bruce, Michael Cyrus
Abstract: Methods and systems for increasing the threshold for stimulated Brillouin scattering are described. A seed source may generate one or more chirped seed pulses characterized by a pulse duration ?, and a frequency chirp. The pulse duration ? may be greater than about 2 nanoseconds. A photonic crystal amplifier amplifies the seed pulses to produce one or more amplified pulses characterized by a peak power P greater than about 1 kilowatt. The pulse duration ?, frequency chirp, and the photonic crystal fiber may be selected such that a threshold for stimulated Brillouin scattering (SBS) in the photonic crystal fiber is greater than the peak power P.
Abstract: A novel in-fiber polarizer is provided that is implemented in an optical fiber structure based on a polarization maintaining (“PM”) optical fiber, and that is configured to impart a predetermined desired polarization to a light signal transmission of a predetermined at least one wavelength transmitted therethrough.
Abstract: Described are methods for fabricating high speed metallic electrical interconnects for printed wiring board for high speed transmission of a data signal across an interconnect in a systems. The trench under electrical signal line is made using the separate dielectric layer having through holes opened through that said dielectric layer and aligned with electrical signal line. The layer with through holes aligned with electrical signal line sandwiched in between layer carrying the electrical signal line and a layer carrying ground conducting line for the case of microstrip-type transmission line. The two separate layers with the through-holes opened and aligned with the electrical signal line are needed for the stripline-type transmission line. Multi-layers board having high speed electrical signal lines can be made utilizing the configuration described.
Abstract: Fabrication of a three-dimensional semiconductor structure is provided by the present disclosure. A buffer oxide film, a nitride film, and an ONO dielectric layer are formed on a handle wafer. A semiconductor layer and an oxide film are formed on a donor wafer, which is turned over and is then bonded to a handle wafer. Silicon of the donor wafer is then removed. In the same manner, blue, green, and red diode layers, and a transistor layer are sequentially formed. A metal layer is formed on the transistor layer. Inter-elements contact and pixel separation processes are performed and a support layer is bonded. The whole device is turned over and the nitride film is etched using an etch-stop layer, thus removing the handle wafer. After the elements are separated, packaging is performed to complete the device. Therefore, a back illuminated image sensor of a multi-layer structure can be provided.
Abstract: This invention provides a novel wavelength-separating-routing (WSR) apparatus that uses a diffraction grating to separate a multi-wavelength optical signal by wavelength into multiple spectral characters, which are then focused onto an array of corresponding channel micromirrors. The channel micromirrors are individually controllable and continuously pivotable to reflect the spectral channels into selected output ports. As such, the inventive WSR apparatus is capable of routing the spectral channels on a channel-by-channel basis and coupling any spectral channel into any one of the output ports. The WSR apparatus of the present invention may be further equipped with servo-control and spectral power-management capabilities, thereby maintaining the coupling efficiencies of the spectral channels into the output ports at desired values.