Abstract: A refresh control circuit of a volatile semiconductor memory device is provided, where the volatile semiconductor memory device includes a plurality of memory cells respectively having a select transistor and a memory element, and the refresh control circuit of the volatile semiconductor memory device includes: a first comparison part, which compares a memory voltage of the memory cell of the volatile semiconductor memory device that is different to a general-memorizing memory cell with a specified threshold voltage, and outputs a comparison result signal, and stops self refresh of the memory cell until the memory voltage is decreased to be smaller than the specified threshold voltage. The memory cell is formed in a region adjacent to an array of the general-memorizing memory cell.

Abstract: In a semiconductor device, the reset command input process may be executed by a simple method and circuit in a short period of time when a reset command is inputted compared to conventional art. A control circuit for the semiconductor device is adapted to control a clock generator for generating a system clock having a changeable frequency, wherein, in a normal operating mode of the semiconductor device, the control circuit changes the frequency of the system clock generated by the clock generator from a first frequency to a second frequency that is higher than the first frequency according to a reset command, and performs an interrupt process on the semiconductor device, so as to enter a reset sequence mode from the normal operating mode.

Abstract: Provided is a capacitor structure including a substrate, a dielectric layer, a first conductive layer, and a cup-shaped capacitor. The dielectric layer is located on the substrate. The first conductive layer is located in the dielectric layer. The cup-shaped capacitor penetrates through the first conductive layer and is located in the dielectric layer. The cup-shaped capacitor includes a bottom electrode, a capacitor dielectric layer, and a top electrode. Two sidewalls of the bottom electrode are electrically connected to the first conductive layer. The capacitor dielectric layer covers a surface of the bottom electrode. The top electrode covers a surface of the capacitor dielectric layer. The capacitor dielectric layer is located between the top electrode and the bottom electrode. A top surface of the bottom electrode is lower than a top surface of the top electrode. Also the invention provides a method of manufacturing the capacitor structure.

Abstract: A method for fabricating semiconductor device is disclosed. A substrate having a first gate layer and a first dielectric layer thereon is provided. A shallow trench isolation (STI) is formed in the substrate and surrounds the first gate layer and the first dielectric layer. The first dielectric layer is removed. A first spacer is formed on the sidewall of the STI above the first gate layer. Using the first spacer as mask, part of the first gate layer and part of the substrate are removed for forming a first opening while defining a first gate structure and a second gate structure.

Abstract: An image sensor device includes a substrate having a pixel array region, isolation structures in the substrate separating pixel regions from one another in the pixel array region, a photo-sensing region in each of the pixel regions, and a reflective cavity structure in the substrate within each of the pixel region. The reflective cavity structure continuously extends from a bottom of the isolation structure to a deeper central portion of each of the pixel regions, thereby forming a dish-like profile. The reflective cavity structure has a reflective index smaller than that of the substrate.

Abstract: A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

Abstract: A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

Abstract: The disclosure provides an internal power supply voltage auxiliary circuit for an internal power supply voltage generating circuit, wherein the internal power supply voltage generating circuit includes: a differential amplifier, comparing an internal power voltage supplied to a loading circuit with a predetermined reference voltage, and outputting a control voltage from an output terminal; and a driving transistor, driving an external power voltage according to the control voltage. The internal power supply voltage auxiliary circuit includes: a time sequence detecting circuit, detecting a transition of a data signal, generating and outputting a detecting signal; and an internal power voltage auxiliary supplying circuit, auxiliary supplying a current for the loading circuit based on the detecting signal. Therefore, it is possible to output an internal power voltage stably, while power consumption would not increase greatly, even when being used in the semiconductor memory device with the DDR.

Abstract: A manufacturing method of a vertical channel transistor array is provided. The method includes following steps. A plurality of embedded word lines are formed at bottoms of trenches, and each of the embedded word lines is located at a first side wall of one of the trenches and connected to first sides of the semiconductor pillars in the same row. Each of the embedded word lines is not connected to second sides of the semiconductor pillars in the same row, and the first sides are opposite to the second sides. Only one embedded word line is correspondingly connected to the semiconductor pillars arranged in one row. An isolation structure is formed between a second side wall of each of the trenches and each of the embedded word lines. The first side wall is opposite to the second side wall.

Abstract: A flash memory disposed on a substrate is provided. The flash memory includes a semiconductor transistor including stacked gate structures, lightly doped regions and spacers. The stacked gate structures include a gate dielectric layer, a first conductive layer, a dielectric layer and a second conductive layer sequentially disposed on the substrate. The dielectric layer has an opening there around such that the first conductive layer electrically connects with the second conductive layer. The lightly doped regions are disposed in the substrate under the opening at sides of the stacked gate structures. The spacers are disposed on sidewalls of the stacked gate structures. A width of spacers is adjusted by controlling a height of the first conductive layer under the opening. The lightly doped regions are disposed by using the dielectric layer as a mask layer, so as to gain margins of the lightly doped regions for good electrical properties.

Abstract: A high voltage generating circuit includes a charge pump circuit and an output voltage control circuit. The charge pump circuit raises a voltage to a high voltage higher than a power supply voltage. The output voltage control circuit controls the voltage to make the raised high voltage to be a predetermined target voltage. The output voltage control circuit includes at least two offset free comparator circuits, or at least one offset free comparator circuit and at least one differential amplifier. The offset free comparator circuit includes a coupling capacitor, a differential amplifier and a plural switch. The coupling capacitor inputs a voltage corresponding to the high voltage. The differential amplifier compares a voltage from the coupling capacitor with a predetermined reference voltage and outputs a comparison result voltage to the charge pump circuit. The switches are connected to the differential amplifier to cancel an offset of the differential amplifier.

Abstract: A writing circuit for a non-volatile memory apparatus is provided. The non-volatile memory apparatus includes a control circuit determining that a programming process of each memory cell is finished when performing data writing. An on/off state of a first switch is controlled according to data stored by a memory component, wherein the memory component stores a programming verify status of the corresponding memory cell. A determination control MOS transistor performs a determination control on a programming validation. A second switch applies a voltage for controlling the determination control MOS transistor to a gate of the determination control MOS transistor according to a determination control signal and sets a gate voltage of the determination control MOS transistor to a voltage value equal to a threshold voltage of the determination control MOS transistor plus a predetermined control voltage value.

Abstract: A method for detecting photolithographic hotspots is disclosed. After receiving layout data, an aerial image simulation is conducted to extract aerial image intensity indices. Based on the combination of one or more aerial image intensity indices, various aerial image detectors are generated. The value of aerial image detectors is verified to determine the position and type of the photolithographic hotspots.

Abstract: A negative reference voltage generating circuit includes a switched capacitor circuit having a capacitor connected to a first and a second nodes, a first and a second switches connected to the first node, a third and a fourth switches connected to the second node; and a control circuit, generating a first to a fourth control signals to control the first to the fourth switches respectively. The control circuit applies a preset positive reference voltage to the first node to charge the capacitor during a first period, and outputs a negative voltage from the second node based on the voltage charged to the capacitor during a second period different from the first period. By repeating the first and the second periods, an inverting negative voltage of the positive reference voltage that is outputted from the second node is used as a negative reference voltage.

Abstract: A non-volatile memory including the following elements is provided. A first conductive layer and a second conductive layer are disposed on a substrate and separated from each other. A patterned hard mask layer is disposed on the first conductive layer and exposes a sharp tip of the first conductive layer. A third conductive layer is disposed on the substrate at one side of the first conductive layer away from the second conductive layer. The third conductive layer is located on a portion of the first conductive layer and covers the sharp tip, and the third conductive layer and the first conductive layer are isolated from each other. A first doped region is disposed in the substrate below the third conductive layer. A second doped region is disposed in the substrate at one side of the second conductive layer away from the first conductive layer.

Abstract: A method of manufacturing a semiconductor device, which includes the steps of forming a gate stack structure made up of a floating gate, an inter-poly dielectric, a control gate and a metal layer on a substrate, forming a conformal liner on the gate stack structure, covering a mask layer on the liner, where the mask layer is lower than the metal layer so that a portion of the liner is exposed, and performing a nitridation treatment to transform the exposed liner into a nitrided liner, so that at least the portion of the metal layer in the gate stack structure is covered by the nitrided liner.

Abstract: A static random access memory (SRAM) including at least a SRAM cell is provided. A gate layout of the SRAM cell includes first to fourth strip doped regions, a recessed gate line and first and second gate lines. The first to fourth strip doped regions are disposed in the substrate in order and separated from each other. The recessed gate line intersects the first to fourth strip doped regions. The first to fourth strip doped regions are disconnected at intersections with the recessed gate line. The first gate line intersects the first and the second strip doped regions. The first and the second strip doped regions are disconnected at intersections with the first gate line. The second gate line intersects the third the fourth strip doped regions. The third and the fourth strip dopeds region are disconnected at intersections with the second gate line.

Abstract: A capacitor circuit formed by a plurality of capacitors using metal electrodes formed on a substrate is provided, such that the capacitance of the capacitor can be adjusted with higher precision as compared to the conventional art. The MOM capacitor includes a plurality of MOM (Metal-Oxide-Metal) capacitors respectfully formed by pairs of metal electrodes facing each other through an insulating film on a substrate. The MOM capacitor circuit is formed by at least one capacitor element in a manner that each of the pairs of the metal electrodes of the MOM capacitors is connected to a first terminal and a second terminal through a connecting conductor; and at least one switch element, connected to the plurality of metal electrodes and at least one of the first terminal and the second terminal, wherein a capacitance of the MOM capacitor circuit is adjusted by turning on/off the switch element.

Abstract: A resistive random access memory (RRAM) including a substrate, a dielectric layer, memory cells and an interconnect structure is provided. The dielectric layer is disposed on the substrate. The memory cells are vertically and adjacently disposed in the dielectric layer, and each of the memory cells includes a first electrode, a second electrode and a variable resistance structure. The second electrode is disposed on the first electrode. The variable resistance structure is disposed between the first electrode and the second electrode. In two vertically adjacent memory cells, the first electrode of the upper memory cell and the second electrode of the lower memory cell are disposed between the adjacent variable resistance structures and isolated from each other. The interconnect structure is disposed in the dielectric layer and connects the first electrodes of the memory cells.

Abstract: A static random access memory and the manufacturing method thereof are provided. By forming the specific gate structure(s) to be concave gate structure(s) and by adjusting the ratio of the effective channel width for these gate structures, the performance of the static random access memory is enhanced.