Abstract: A method of fabricating a flash memory includes providing a fin structure. The fin structure includes a floating gate material, an oxide layer and a semiconductive layer. An insulating layer is disposed at two sides of the fin structure. Then, a dielectric layer conformally covers the floating gate material and insulating layer. Later, a patterned first mask layer, a patterned second mask layer, and a control gate are stacked on the dielectric layer from bottom to top. The control gate crosses at least one fin structure. Next, at least one isotropic etching step is performed to entirely remove the exposed dielectric layer.

Abstract: A resistive random access memory including a substrate, a dielectric layer disposed on the substrate and at least one memory cell string is provided. The memory cell string includes memory cells and second vias. The memory cells are vertically and adjacently disposed in the dielectric layer, and each of the memory cells includes a first via, two conductive lines respectively disposed at two sides of the first via and two variable resistance structures respectively disposed between the first via and the conductive lines. In the vertically adjacent two memory cells, the variable resistance structures of the upper memory cell and the variable resistance structures of the lower memory cell are isolated from each other. The second vias are respectively disposed in the dielectric layer under the first vias and connected to the first vias, and the vertically adjacent two first vias are connected by the second via.

Abstract: A memory control circuit 10 controls an operation of reading stored data from a memory cell 50 connected to a word line WL and a bit line BL based on an address Address including a row address Ax and a column address Ay. When the address Address includes redundancy addresses P1 to P4 designating a word line WLa or a bit line BLc connected to a specific memory cell Cc, redundancy decoders 13-1 to 13-4 replace the specific memory cell Cc with a redundancy memory cell RCc connected to redundancy word lines RWL1 and RWL2 or redundancy bit lines RBL1 and RBL2. Redundancy address latch circuits 12-1 to 12-4 respectively hold the redundancy addresses P1 to P4, and erase the held redundancy addresses P1 to P4 based on a reset signal RS inputted from the memory control circuit 10.

Abstract: A negative reference voltage generating circuit includes a clamp-type reference voltage circuit and a differential amplifier. The clamp-type reference voltage circuit is connected between a node of a first negative voltage which is equal to or lower than the ground voltage and a node of a second negative voltage which is lower than the first negative voltage, and is formed by connecting a first circuit and a second circuit in parallel. The differential amplifier amplifies the difference between a node voltage in the first circuit and a node voltage in the second circuit, and outputs a negative reference voltage.

Abstract: The invention is an internal power voltage generating circuit, adjusted such that an internal power voltage becomes the reference voltage. The internal power voltage generating circuit further includes: a charge share circuit, including a charging capacitor, an initial voltage adjusting circuit and a charge reset circuit. The charging capacitor is connected to a differential amplifier via a switch circuit, and is charged by charges of a control voltage. The initial voltage adjusting circuit adjusts and applies an initial voltage to the charging capacitor. The charge reset circuit discharges the charging capacitor. When the internal power voltage is lower than a reference voltage, the charging capacitor having the initial voltage is connected to the differential amplifier, and the charges of the control voltage are transferred to the charging capacitor during a transfer period.

Abstract: A manufacturing method of an image sensor is provided. A substrate is provided, and the substrate includes a pixel array region. A plurality of openings is formed in the pixel array region of the substrate. A light guide region is formed in the substrate aside each of the openings, wherein a portion of the substrate is disposed between the light guide region and the opening, and the depth of the light guide region in the substrate is greater than the depth of the opening aside the light guide region in the substrate. Isolation structures are formed in the openings to define a plurality of pixel regions respectively located between two adjacent isolation structures in the pixel array region. A photosensitive region is formed in each of the pixel regions of the substrate. A conductive line layer is formed on each of the pixel regions of the substrate.

Abstract: A semiconductor process for manufacturing particular patterns includes the steps of forming a target layer and evenly-spaced core bodies on a substrate, conformally forming a hard mask layer, forming a first photoresist covering a predetermined region on the hard mask layer wherein the predetermined region encompasses at least two core bodies, performing a first etch process to remove a portion of the hard mask layer outside the predetermined region and expose a number of core bodies, removing the exposed core bodies, forming a second photoresist at least encompassing all the recesses in the predetermined region, and performing a second etch process to pattern the target layer.

Abstract: A method for manufacturing a structure having an air gap includes following steps. A plurality of patterns is formed in a pattern region of a substrate. A sacrificial layer is formed on the substrate, and a top surface of the sacrificial layer is lower than a top surface of the patterns to expose a plurality of upper portions of the patterns. A hard mask layer is formed to cover the sacrificial layer and the upper portions of the patterns. An etching-back process is performed to the hard mask layer to expose the sacrificial layer outside the pattern region, and the hard mask layer remaining inside the pattern region seals the opening between the upper portions of the patterns. The sacrificial layer is removed to form an air gap between the two adjacent patterns.

Abstract: In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.

Abstract: A negative reference voltage generating circuit includes a clamp-type reference voltage circuit and a differential amplifier. The clamp-type reference voltage circuit is connected between a node of a first negative voltage which is equal to or lower than the ground voltage and a node of a second negative voltage which is lower than the first negative voltage, and is formed by connecting a first circuit and a second circuit in parallel. The differential amplifier amplifies the difference between a node voltage in the first circuit and a node voltage in the second circuit, and outputs a negative reference voltage.

Abstract: A semiconductor circuit structure and process of making the same is provided in the present invention, comprising the steps of providing a substrate having a target layer and a hard mask layer, forming a patterned small core body group and a large core body group on the hard mask layer, forming a spacer material layer conformally on the substrate and the core body groups, forming filling bodies in each recess of the spacer material layer, performing a first etching process to remove exposed spacer material layer, using the filling bodies as a mask to perform a second etching process for patterning the hard mask layer, and using the patterned hard mask layer as a mask to perform a third etching process for patterning the conductive layer.

Abstract: A non-volatile semiconductor memory device utilized to implement the writing of data by adding a predetermined voltage for assigning a word line to a non-volatile memory cell includes a control process or generating and outputting control data implementing a program code for writing data including a word line assignment command and voltage source assignment data, a writing controller decoding the control data and generating a control signal of the word line assignment command and a control signal of the voltage source assignment data, a voltage generation circuit generating several voltages for writing data, and a switch circuit selecting a voltage, corresponding to voltage source assignment data, among several voltages, according to the control signal of the word line assignment command and the control signal of voltage source assignment data and outputting the selected voltage to the word line corresponding to the word line assignment command.

Abstract: A split gate flash memory is provided. A device isolation structure is disposed in a substrate to define an active area. A first doping region and a second doping region are respectively disposed in an active area of the substrate. A select gate is disposed in a trench in the substrate, and a side of the select gate is adjacent to the first doping region. A gate dielectric layer is disposed between the select gate and the substrate. A floating gate is disposed on the substrate, a side of the floating gate overlaps to the second doping region, and a portion of the floating gate is disposed on the select gate. An inter-gate dielectric layer is disposed between the floating gate and the select gate and between the floating gate and the substrate.

Abstract: A resistive random access memory including a first electrode, a dielectric layer, at least a first nanostructure and a second electrode is provided. The dielectric layer is disposed on the first electrode. The first nanostructure is disposed between the first electrode and the dielectric layer and includes a plurality of first cluster-type-type metal nanoparticles and a plurality of first covering-type metal nanoparticles. The first cluster-type-type metal nanoparticles are disposed on the first electrode. The first covering-type metal nanoparticles covers the first cluster-type-type metal nanoparticles, wherein a diffusion coefficient of the first cluster-type-type metal nanoparticles is larger than a diffusion coefficient of the first covering-type metal nanoparticles. The second electrode is disposed on the dielectric layer.

Abstract: A non-volatile semiconductor memory device includes a non-volatile memory cell array and a control circuit for controlling writing-in to the memory cell array. In the stage before an erasing pulse adding in an erasing process where data of written-in memory cells is erased, the control circuit detects a programming speed when writing-in to the memory cell array, determines a programming start voltage corresponding to the programming speed for every block or every word line, stores the determined programming start voltage in the memory cell array and reads-out the programming start voltage from the memory cell array to write-in predetermined data.

Abstract: A semiconductor process for manufacturing particular patterns includes the steps of forming a target layer and evenly-spaced core bodies on a substrate, conformally forming a hard mask layer, forming a first photoresist covering a predetermined region on the hard mask layer wherein the predetermined region encompasses at least two core bodies, performing a first etch process to remove a portion of the hard mask layer outside the predetermined region and expose a number of core bodies, removing the exposed core bodies, forming a second photoresist at least encompassing all the recesses in the predetermined region, and performing a second etch process to pattern the target layer.

Abstract: A method of fabricating a resistive random access memory (RRAM) device is disclosed. A plurality of word lines extending along a first direction are formed on a substrate with a recess between the word lines. A spacer-type resistance layer and a top electrode layer are formed on a sidewall of each of the word lines. A photoresist stripe pattern extending along a second direction is then formed on the substrate. The first direction is perpendicular to the second direction. An etching process is performed to remove the top electrode layer and the spacer-type resistance layer not covered by the photoresist stripe pattern to form a plurality of top electrodes. A diode is formed on each of the top electrodes.

Abstract: A nonvolatile memory cell array is divided into first and second cell arrays, the page buffer circuit is arranged between the first and second cell arrays, a second latch circuit is arranged by the outside edge section of the first cell array, and the page buffer circuit is connected to the second latch circuit via a global bit line of the first cell array. The data writing to the first or second cell array is controlled by transmitting the writing data to the page buffer circuit via the global bit line from the second latch circuit, after the writing data is latched in the second latch circuit. The data reading of outputting the data read from the first or second cell array to the external circuit is controlled by transmitting data to the second latch circuit from the page buffer circuit via the global bit line.

Abstract: A resistive random access memory (RRAM) unit includes at least one bit line extending along a first direction, at least one word line disposed on a substrate and extending along a second direction so as to intersect the bit line, a hard mask layer on the word line to isolate the word line from the bit line, a first memory cell on a sidewall of the word line, and a second memory cell on the other sidewall of the word line.

Abstract: A semiconductor process for forming specific pattern features comprising the steps of forming a target layer, a hard mask layer and a plurality of equally spaced-apart core bodies on a substrate, forming spacers on sidewalls of the core bodies, removing the core bodies so that the spacers are spaced-apart on the hard mask layer, using spacers as a mask to pattern the hard mask layer, removing the hard mask bodies outside of a predetermined region, forming photoresists on several outermost hard mask bodies of the predetermined region, and using the photoresists and remaining hard mask bodies as a mask to pattern the target layer.