Patents Assigned to pSemi Corporation
  • Patent number: 12176876
    Abstract: An interdigitated RF filter. The interdigitated RF filter includes input fingers connected to an input node and output fingers connected to an output node where at least one input finger is connected the output node or at least one output finger is connected to the input node. The described interdigitated RF filter can be implemented in various configurations such as series, shunt, ladder or a combination thereof.
    Type: Grant
    Filed: June 21, 2023
    Date of Patent: December 24, 2024
    Assignee: PSEMI CORPORATION
    Inventor: Michael P. Gaynor
  • Patent number: 12176936
    Abstract: Methods and devices addressing design of wideband LNAs with gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed. The described methods and devices also address carrier aggregation requirements and provide solutions that can be used both in single-mode and split-mode operations.
    Type: Grant
    Filed: August 7, 2023
    Date of Patent: December 24, 2024
    Assignee: pSemi Corporation
    Inventors: Emre Ayranci, Miles Sanner, Phanindra Yerramilli
  • Patent number: 12176864
    Abstract: Circuits and methods for achieving good amplifier AM-AM and AM-PM metrics while achieving good power, PAE, linearity, and EVM performance. Embodiments compensate for a non-linear distortion profile (e.g., an AM-PM and/or AM-AM profile) in an amplifier by pre-processing an input signal, such as a radio-frequency signal, to alter the non-linear distortion profile of the input signal so as to compensate for the non-linear distortion profile imposed by a coupled device, such as an amplifier.
    Type: Grant
    Filed: July 28, 2023
    Date of Patent: December 24, 2024
    Assignee: pSemi Corporation
    Inventor: Daoud Salameh
  • Patent number: 12176888
    Abstract: Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and/or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.
    Type: Grant
    Filed: April 26, 2023
    Date of Patent: December 24, 2024
    Assignee: pSemi Corporation
    Inventor: Alper Genc
  • Patent number: 12176815
    Abstract: An apparatus for power conversion comprises a voltage transformation element, a regulating element, and a controller; wherein, a period of the voltage transformation element is equal to a product of a coefficient and a period of the regulating circuit, and wherein the coefficient is selected from a group consisting of a positive integer and a reciprocal of said integer.
    Type: Grant
    Filed: June 13, 2024
    Date of Patent: December 24, 2024
    Assignee: pSemi Corporation
    Inventor: David Giuliano
  • Patent number: 12166477
    Abstract: An RF switch to controllably withstand an applied RF voltage Vsw, or a method of fabricating such a switch, which includes a string of series-connected constituent FETs with a node of the string between each pair of adjacent FETs. The method includes controlling capacitances between different nodes of the string to effectively tune the string capacitively, which will reduce the variance in the RF switch voltage distributed across each constituent FET, thereby enhancing switch breakdown voltage. Capacitances are controlled, for example, by disposing capacitive features between nodes of the string, and/or by varying design parameters of different constituent FETs. For each node, a sum of products of each significant capacitor by a proportion of Vsw appearing across it may be controlled to approximately zero.
    Type: Grant
    Filed: January 26, 2024
    Date of Patent: December 10, 2024
    Assignee: PSEMI CORPORATION
    Inventor: Robert Mark Englekirk
  • Patent number: 12166729
    Abstract: Methods and devices for reducing coupling of RF frequency components between different bands of an RF system are presented. According to one aspect, a notch filter having a notch centered at a harmonic of a fundamental frequency of a first band transmit side is coupled to an output of an LNA of the first band. According to another aspect, the harmonic is a second harmonic, a third harmonic or higher order harmonics. According to another aspect, the notch filter includes a plurality of notches at respective plurality of harmonics. According to a further aspect, the notch has an attenuation of 30 dB or greater at the second harmonic and 10 dB or greater at the third harmonic. Further included is a method for reducing coupling of harmonics of signals transmitted in the first band into a receive path of the second band, thereby increasing noise figure/sensitivity performances of the receive path.
    Type: Grant
    Filed: February 18, 2022
    Date of Patent: December 10, 2024
    Assignee: pSemi Corporation
    Inventors: Joseph Golat, David Kovac
  • Patent number: 12149167
    Abstract: Disclosed embodiments may include a power converter system with fault handling. Embodiments may include first and second power converters each including an output terminal and a control terminal, the first and second power converters to regulate voltage or current at their respective output terminals based on a voltage at their respective control terminals, the output terminals coupled to each other, and the control terminals coupled to each other; wherein the first power converter comprises: a circuit to detect a fault condition associated with the first power converter and to generate a first fault signal at the control terminal of the first power converter after the detecting the fault condition associated with the first power converter; wherein the second power converter comprises: a circuit to change an operating mode of the second power converter after generating the first fault signal at the control terminal of the first power converter.
    Type: Grant
    Filed: September 20, 2022
    Date of Patent: November 19, 2024
    Assignee: pSemi Corporation
    Inventors: Tim Wen Hui Yu, Gregory Szczeszynski
  • Patent number: 12143010
    Abstract: Transient or fault conditions for a switched capacitor power converter are detected by measuring one or more of internal voltages and/or currents associated with switching elements (e.g., transistors) or phase nodes, or voltages or currents at terminals of the converter, and based on these measurements detect that a condition has occurred when the measurements deviate from a predetermined range. Upon detection of the condition fault control circuitry alters operation of the converter, for example, by using a high voltage switch to electrically disconnect at least some of the switching elements from one or more terminals of the converter, or by altering timing characteristics of the phase signals.
    Type: Grant
    Filed: June 13, 2024
    Date of Patent: November 12, 2024
    Assignee: pSemi Corporation
    Inventors: Aichen Low, David M. Giuliano, Gregory Szczeszynski, Jeff Summit, Oscar Blyde
  • Patent number: 12135576
    Abstract: Methods and apparatuses for an optimal timer array using a single reference counter are presented. According to one aspect, timers of the timer array use the single reference counter to process different timed trigger requests. A count translation logic block translates counts corresponding to the requested timed triggers to target values of the reference counter. Register arrays that include the target values and active/inactive status flags of the timers are used to implement specific timers. Comparators are used to compare values of the reference counter to the target values to establish expiration of the requested timed triggers. A target translation logic block translates a current value of the reference counter to an offset value from the target values for monitoring by an external circuit.
    Type: Grant
    Filed: August 18, 2023
    Date of Patent: November 5, 2024
    Assignee: pSemi Corporation
    Inventor: Gerald Alcorn
  • Publication number: 20240363604
    Abstract: This disclosure relates to embodiments that include an apparatus that may comprise a first layer including a first plurality of active devices, a second layer including a second plurality of active devices, and/or a third layer including a plurality of passive devices and disposed between the first and the second layers. An active device of the first plurality of active devices and an active device of the second plurality of active devices may influence a state of charge of a passive device of the plurality of passive devices.
    Type: Application
    Filed: February 5, 2024
    Publication date: October 31, 2024
    Applicant: pSemi Corporation
    Inventor: David GIULIANO
  • Patent number: 12132474
    Abstract: An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in a low loss mode, in a bypass mode, or, optionally, in a signal function mode. Embodiments of the invention allow for both a single switch in the series input path to a target circuit while still having the ability to isolate the bypass path from the target circuit. In the low loss and bypass mode, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.
    Type: Grant
    Filed: August 21, 2023
    Date of Patent: October 29, 2024
    Assignee: pSemi Corporation
    Inventors: Ethan Prevost, Michael Conry
  • Patent number: 12119814
    Abstract: A FET switch stack has a stacked arrangement of FET switches, a gate resistor network with ladder resistors and common gate resistors, and a gate resistor bypass arrangement. The bypass arrangement has a first set of bypass switches connected across the gate resistors and a second set of bypass switches connected across the ladder resistors. Bypass occurs during at least a portion of the transition state of the stacked arrangement of FET switches.
    Type: Grant
    Filed: March 14, 2023
    Date of Patent: October 15, 2024
    Assignee: pSemi Corporation
    Inventors: Ravindranath D. Shrivastava, Alper Genc
  • Patent number: 12113057
    Abstract: A physical layout of a symmetric FET is described which provides symmetry in voltages coupled to structures of the FET so to reduce OFF state asymmetry in capacitances generated by the structures when the FET is used as a switch. According to one aspect, the symmetric FET is divided into two halves that are electrically coupled in parallel. Gate structures of the two half FETs are arranged in the middle region of the layout, each gate structure having gate fingers that project towards opposite directions. Interdigitated source and drain structures run along the gate fingers and include crossover structures that cross source and drain structures in the middle region of the layout. The gate structures share a body contact region that is arranged in the middle of the layout between the two gate structures.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: October 8, 2024
    Assignee: pSemi Corporation
    Inventor: Tero Tapio Ranta
  • Patent number: 12113263
    Abstract: Methods and devices to address antenna termination in absence of power supplies within an electronic circuit including a termination circuit and a switching circuit. The devices include regular NMOS devices that decouple the antenna from the switching circuit in absence of power supplies while the antenna is coupled to a terminating impedance having a desired impedance value through a native NMOS device. The antenna is coupled with the switching circuit via the regular NMOS device during powered conditions while the antenna is decoupled from the terminating impedance.
    Type: Grant
    Filed: October 30, 2023
    Date of Patent: October 8, 2024
    Assignee: PSEMI CORPORATION
    Inventor: Sivakumar Ganesan
  • Patent number: 12113438
    Abstract: Transient or fault conditions for a switched capacitor power converter are detected by measuring one or more of internal voltages and/or currents associated with switching elements (e.g., transistors) or phase nodes, or voltages or currents at terminals of the converter, and based on these measurements detect that a condition has occurred when the measurements deviate from a predetermined range. Upon detection of the condition fault control circuitry alters operation of the converter, for example, by using a high voltage switch to electrically disconnect at least some of the switching elements from one or more terminals of the converter, or by altering timing characteristics of the phase signals.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: October 8, 2024
    Assignee: pSemi Corporation
    Inventors: Aichen Low, David M. Giuliano, Gregory Szczeszynski, Jeff Summit, Oscar Blyde
  • Patent number: 12107495
    Abstract: An apparatus for providing electric power to a load includes a power converter that accepts electric power in a first form and provides electric power in a second form. The power converter comprises a control system, a first stage, and a second stage in series. The first stage accepts electric power in the first form. The control system controls operation of the first and second stage. The first stage is either a switching network or a regulating network. The second stage is a regulating circuit when the first stage is a switching network, and a switching network otherwise.
    Type: Grant
    Filed: April 18, 2023
    Date of Patent: October 1, 2024
    Assignee: pSemi Corporation
    Inventors: David Giuliano, Gregory Szczeszynski
  • Patent number: 12101065
    Abstract: Methods and circuital arrangements for turning OFF branches of a multi-branch cascode amplifier are presented. First and second switching arrangements coupled to a branch allow turning OFF the branch while protecting transistors of the branch from a supply voltage that may be greater than a tolerable voltage of the transistors. The first switching arrangement includes a transistor-based switch that is in series connection with the transistors of the branch. The first switching arrangement drops the supply voltage during the OFF state of the branch and provides a conduction path for a current through the branch during the ON state of the branch. A resistor and a shunting switch are coupled to a gate of the transistor-based switch to reduce parasitic coupling effects of the transistor-based switch upon an RF signal coupled to the branch during the ON state and OFF state of the branch.
    Type: Grant
    Filed: October 23, 2023
    Date of Patent: September 24, 2024
    Assignee: pSemi Corporation
    Inventors: Miles Sanner, Emre Ayranci, Parvez Daruwalla
  • Patent number: 12100707
    Abstract: Systems, methods, and apparatus for an improved protection from charge injection into layers of a device using resistive structures are described. Such resistive structures, named s-contacts, can be made using simpler fabrication methods and less fabrication steps. In a case of metal-oxide-semiconductor (MOS) field effect transistors (FETs), s-contacts can be made with direct connection, or resistive connection, to all regions of the transistors, including the source region, the drain region and the gate.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: September 24, 2024
    Assignee: pSemi Corporation
    Inventors: Befruz Tasbas, Simon Edward Willard, Alain Duvallet, Sinan Goktepeli
  • Patent number: 12101066
    Abstract: Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.
    Type: Grant
    Filed: December 21, 2022
    Date of Patent: September 24, 2024
    Assignee: pSemi Corporation
    Inventor: Jonathan James Klaren