Abstract: A physical layout of a symmetric FET is described which provides symmetry in voltages coupled to structures of the FET so to reduce OFF state asymmetry in capacitances generated by the structures when the FET is used as a switch. According to one aspect, the symmetric FET is divided into two halves that are electrically coupled in parallel. Gate structures of the two half FETs are arranged in the middle region of the layout, each gate structure having gate fingers that project towards opposite directions. Interdigitated source and drain structures run along the gate fingers and include crossover structures that cross source and drain structures in the middle region of the layout. The gate structures share a body contact region that is arranged in the middle of the layout between the two gate structures.

Abstract: Transient or fault conditions for a switched capacitor power converter are detected by measuring one or more of internal voltages and/or currents associated with switching elements (e.g., transistors) or phase nodes, or voltages or currents at terminals of the converter, and based on these measurements detect that a condition has occurred when the measurements deviate from a predetermined range. Upon detection of the condition fault control circuitry alters operation of the converter, for example, by using a high voltage switch to electrically disconnect at least some of the switching elements from one or more terminals of the converter, or by altering timing characteristics of the phase signals.

Abstract: An apparatus for providing electric power to a load includes a power converter that accepts electric power in a first form and provides electric power in a second form. The power converter comprises a control system, a first stage, and a second stage in series. The first stage accepts electric power in the first form. The control system controls operation of the first and second stage. The first stage is either a switching network or a regulating network. The second stage is a regulating circuit when the first stage is a switching network, and a switching network otherwise.

Abstract: Systems, methods, and apparatus for an improved protection from charge injection into layers of a device using resistive structures are described. Such resistive structures, named s-contacts, can be made using simpler fabrication methods and less fabrication steps. In a case of metal-oxide-semiconductor (MOS) field effect transistors (FETs), s-contacts can be made with direct connection, or resistive connection, to all regions of the transistors, including the source region, the drain region and the gate.

Abstract: Methods and circuital arrangements for turning OFF branches of a multi-branch cascode amplifier are presented. First and second switching arrangements coupled to a branch allow turning OFF the branch while protecting transistors of the branch from a supply voltage that may be greater than a tolerable voltage of the transistors. The first switching arrangement includes a transistor-based switch that is in series connection with the transistors of the branch. The first switching arrangement drops the supply voltage during the OFF state of the branch and provides a conduction path for a current through the branch during the ON state of the branch. A resistor and a shunting switch are coupled to a gate of the transistor-based switch to reduce parasitic coupling effects of the transistor-based switch upon an RF signal coupled to the branch during the ON state and OFF state of the branch.

Abstract: Methods and devices to reduce glitches in phase shifters implementing high isolation switches are disclosed. Such glitches occur at the output of the phase shifters when transitioning from one phase shift to another. The disclosed method implements delays in various steps of the phase shifter transitions. Exemplary embodiments implementing single-pole multi-throw are provided and exemplary performance of the disclosed methods are also presented. The described methods are also applicable to multi-step attenuators.

Abstract: Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

Abstract: A method and apparatus is disclosed for maintaining a stable power supply to a circuit when activating/deactivating a switch in order to accelerate the switching time of the switch. The gate of a FET is coupled to a switch driver. The switch driver is powered by a positive power supply and a negative power supply. When the switch is to be activated/deactivated, the gate is first coupled to a reference potential (i.e., ground) for a “reset period” to reduce any positive/negative charge that has been accumulated in the FET. At the end of the reset period, the gate is then released from the reference potential and the switch driver drives the gate to the desired voltage level to either activate or deactivate the switch.

Abstract: A FET switch stack and a method to operate a FET switch stack. The FET switch stack includes a stacked arrangement of body bypass FET switches connected across respective common body resistors. The body bypass FET switches bypass the respective common body resistors during the OFF steady state of the FET switch stack and do not bypass the respective common body resistors during the ON steady state.

Abstract: A positive-logic FET switch stack that does not require a negative bias voltage, and which can withstand application of a high voltage RF signal without requiring terminal capacitors. Some embodiments include a stack of FET switches, with at least one FET requiring a negative VGS to turn OFF and configured so as to not require a negative voltage, series-coupled on at least one end to an end-cap FET that turns OFF when the VGS of such end-cap FET is essentially zero volts, wherein at least one end-cap FET is configured to be coupled to a corresponding RF signal source and has a gate coupled to the corresponding RF signal source through an associated switch circuit. The switch circuit may include an NMOSFET and a PMOSFET, or a diode and an NMOSFET, or a diode and an NMOSFET and a PMOSFET.

Abstract: An apparatus for power conversion includes a switching network that controls interconnections between pump capacitors in a capacitor network that has a terminal coupled to a current source, and a charge-management subsystem. In operation, the switching network causes the capacitor network to execute charge-pump operating cycles during each of which the capacitor network adopts different configurations in response to different configurations of the switching network. At the start of a first charge-pump operating cycle, each pump capacitor assumes a corresponding initial state. The charge-management subsystem restores each pump capacitor to the initial state by the start of a second charge-pump operating cycle that follows the first charge-pump operating cycle.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: An apparatus for electric power conversion includes a converter having a regulating circuit and switching network. The regulating circuit has magnetic storage elements, and switches connected to the magnetic storage elements and controllable to switch between switching configurations. The regulating circuit maintains an average DC current through a magnetic storage element. The switching network includes charge storage elements connected to switches that are controllable to switch between plural switch configurations. In one configuration, the switches forms an arrangement of charge storage elements in which at least one charge storage element is charged using the magnetic storage element through the network input or output port. In another, the switches form an arrangement of charge storage elements in which an element discharges using the magnetic storage element through one of the input port and output port of the switching network.

Abstract: An integrated circuit (IC) for controlling a power converter. The IC includes a controller that, in a first sensing period, enables a sensing circuit of the power converter and electrically connects an output node of an op amp of the sensing circuit and a first node of a capacitor of the sensing circuit, creating a first voltage across the capacitor; in a period between the first sensing period and a second sensing period, disables the sensing circuit and disconnects the output node of the op amp and the first node of the capacitor to maintain the first voltage across the capacitor; and in the second sensing period, enables the sensing circuit and connects the output node of the op amp and the first node of the capacitor, the maintained first voltage across the capacitor reducing a settling time for the enabled sensing circuit.

Abstract: Methods and devices to support multiple gain states in amplifiers are described. The methods and devices are based on implementing a feedback element in the amplifier and adjusting the impedance of the feedback element to provide a desired gain while maintaining the overall performance of the amplifier and reducing degradation of the S12 parameter. The feedback element includes an adjustable attenuator and a tunable resistive element. The adjustable attenuator is provided in a path that is common to the feedback path and the bypass path of the amplifier. Exemplary implementations of adjustable attenuators are also presented.

Abstract: Disclosed are apparatuses and methods for powering up a step-up charge pump circuit. One method embodiment comprises: providing an input voltage at a step-up converter input terminal, without operating the charge pump circuit's phase or series switches; determining that the supply voltages for a first set of voltage regulators are sufficient to operate the phase switches in at least a reduced gate drive mode; after this determination, operating the phase switches without operating the series switches; determining that the supply voltage for one of a second set of voltage regulators is sufficient to operate its corresponding series switch in at least a reduced gate drive mode; and operating the corresponding series switch, after determining that the supply voltage for the one of the second set of voltage regulators is sufficient to operate the corresponding series switch.

Abstract: Methods and devices to address the undesired DC voltage distribution across switch stacks in OFF state are disclosed. The disclosed devices include charge control elements that sample the RF signal to generate superimposed voltages at specific points of the switch stack biasing circuit. The provided voltages help reducing the drooping voltages on drain/source/body terminals of the transistors within the stack by supplying the current drawn by drain/source terminals of the stacked transistors and/or by sinking the body leakage current exiting the body terminals of such transistors. Methods and techniques teaching how to provide proper tapping points in the biasing circuit to sample the RF signal are also disclosed.

Abstract: In a power converter having a regulator and charge pump, both of which operate in plural modes, a controller receives information indicative of the power converter's operation and, based at least in part on said information, causes transitions between regulator modes and transitions between charge-pump modes.

Abstract: Electronic circuits and methods encompassing an RF switch comprising a plurality of series-coupled (stacked) integrated circuit (IC) SOI MOSFETs having a distributed back-bias network structure comprising groups of substrate contacts coupled to a bias voltage source through a resistive ladder. The distributed back-bias network structure sets the common IC substrate voltage at a fixed DC bias but resistively decouples groups of MOSFETs with respect to RF voltages so that the voltage division characteristics of the MOSFET stack are maintained. The distributed back-bias network structure increases the voltage handling capability of each MOSFET and improves the maximum RF voltage at which a particular MOSFET is effective as a switch device, while mitigating loss, leakage, crosstalk, and distortion. RF switches in accordance with the present invention are particularly useful as antenna switches.

Abstract: A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs). Cascode circuits, each having a “common source” configured input FET and a “common gate” configured output FET, serve as the LNAs. An amplifier-branch control switch, configured to withstand relatively high voltage differentials by means of a relatively thick gate oxide layer and coupled between a terminal of the output FET and a power supply, controls the ON and OFF state of each LNA while enabling use of a relatively thin gate oxide layer for the output FETs, thus improving LNA performance. Some embodiments may include a split cascode amplifier and/or a power amplifier.