Abstract: A receiver topology for supporting various combinations of interband carrier aggregation (CA) signals, intraband non-contiguous CA and non-CA signals having different combinations of signals aggregated therein.

Abstract: Operating a charge pump in which switches from a first set of switches couple capacitor terminals to permit charge transfer between them and in which switches from a second set of switches couple capacitor terminals of capacitors to either a high-voltage or a low-voltage terminal includes cycling the switches through a sequence of states, each state defining a corresponding configuration of the switches. At least three of the states define different configurations of the switches. During each of the configurations, charge transfer is permitted between a pair of elements, one of which is a first capacitor and another of which is either a second capacitor or the first terminal.

Abstract: Methods and devices to improve the switching speed of radio frequency FET switch stacks are disclosed. The described methods and devices are based on bypassing drain-sources resistors when the FET switch stack is transitioning from an ON to an OFF state. Several implementations of the disclosed teachings are also presented.

Abstract: Methods and apparatuses for providing a reduction in output power of a balanced amplifier configuration are presented. According to one aspect, reduction of the output power is provided by deactivating one of the two amplification paths of the balanced amplifier. According to another aspect, impedances seen at ports of input and output couplers of the balanced amplifier configuration part of a deactivated amplification path are selectively switched in dependence of operation according to the reduced output power or according to normal output power. In addition, or in the alternative, impedance seen at an isolated/terminated port of the input and/or the output coupler is selectively switched in dependence of the operation. When operating according to the reduced output power, values of the switched impedances can be adjusted to tune a frequency response of the balanced amplifier.

Abstract: Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.

Abstract: In a power converter, a switching network having switches that operate at a common frequency and duty cycle interconnects circuit elements. These circuit elements include capacitors that are in a capacitor network and a magnetic filter. When connected to the capacitors by a switch from the switching network, the magnetic filter imposes a constraint upon inter-capacitor charge transfer between the capacitors to maintain the filter's second terminal at a voltage. The switching network transitions between states. These states include a first state, a second state, and a third state. In both the first state and the third state, the first magnetic-filter terminal couples to the capacitor network. In the second state, which occurs between the first and third state, the switches ground the first magnetic-filter terminal.

Abstract: A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

Abstract: An interdigitated RF filter. The interdigitated RF filter includes input fingers connected to an input node and output fingers connected to an output node where at least one input finger is connected the output node or at least one output finger is connected to the input node. The described interdigitated RF filter can be implemented in various configurations such as series, shunt, ladder or a combination thereof.

Abstract: A cascade multiplier includes a switch network having switching elements, a phase pump, and a network of pump capacitors coupled with the phase pump and to the switch network. The network of pump capacitors includes first and second capacitors, both of which have one terminal DC coupled with the phase pump, and a third capacitor coupled with the phase pump through the first capacitor.

Abstract: An apparatus for power conversion includes a transformation stage for transforming a first voltage into a second voltage. The transformation stage includes a switching network, a filter, and a controller. The filter is configured to connect the transformation stage to a regulator. The controller controls the switching network.

Abstract: An apparatus for controlling a power converter that includes an inductance and a switched-capacitor network that cooperate to transform a first voltage into a second voltage features a controller, a switched-capacitor terminal for connection to the switched-capacitor network, and switches. at least one of which connects to the switched-capacitor terminal.

Abstract: RF transistors manufactured using a bulk CMOS process exhibit non-linear drain-body and source-body capacitances which degrade the linearity performance of the RF circuits implementing such transistors. The disclosed methods and devices address this issue and provide solutions based on implementing two or more bias voltages in accordance with the states of the transistors. Various exemplary RF circuits benefiting from the described methods and devices are also presented.

Abstract: Methods and devices providing Positive Logic biasing schemes for use in a digitally tuning capacitor in an integrated circuit device are described. The described methods can be used in integrated circuits with stringent requirements in terms of switching time, power handling, noise sensitivity and power consumption. The described devices include DC blocking capacitors arranged in series with stacked switches coupled to RF nodes. The stacked FET switches receive non-negative supply voltages through their drains and gates during the ON and OFF states to adjust the capacitance between the two nodes.

Abstract: Circuits and methods for limiting excessive current in circuits (such as step-up DC-to-DC converter circuits) in which very low ohmic FETs (VLOFETs) are used in circuit pathways that are subjected to startup in-rush current. Embodiments include a current mirror driver circuit that can be coupled to the gates of a VLOFET to form a current mirror that limits current flow through the VLOFET. The current mirror driver circuit provides for pulsed operation so that a coupled VLOFET still toggles between an OFF state and a current limited mode, particularly during a startup period. By using the current mirror driver circuit in conjunction with VLOFETs in circuit pathways that are subjected to startup in-rush current, in-rush current can be regulated to an acceptable level. Notably, no additional impedances are required in circuit pathways that are subjected to startup in-rush current to limit in-rush current, thus avoiding loss of efficiency.

Abstract: Methods and devices to improve the insertion loss at the LNA input of RF receivers are disclosed. The described methods and devices make use of the band switches in OFF state to improve the layout design, insertion loss and NF. Exemplary embodiments incorporating the disclosed concept are also presented.

Abstract: High density integrated circuit (IC) capacitor structures and fabrication methods that increase the capacitive density of integrated capacitors with little or no reduction in Q-factor by using a stacked high-density integrated capacitor structure that includes substrate-contact (“S-contact”) capacitor plates. Embodiments include a plurality of S-contact plates fabricated in electrical connection with a capacitor formed in a metal interconnect layer. Some embodiments include interstitial S-contact plates to provide additional capacitive density. Embodiments may also utilize single-layer transfer (SLT) and double-layer transfer (DLT) techniques to create ICs with high density, high Q-factor capacitors. Such capacitors can be beneficially combined with other structures made possible in SLT and DLT IC structures, such as metal interconnect layer capacitors and inductors, and one or more FETs having a conductive aligned supplemental gate.

Abstract: Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.

Abstract: An apparatus includes first and second pluralities of switches, a controller for controlling these switches, gate-drivers for driving switches from the first plurality of switches, and first and second terminals configured for coupling to corresponding first and second external circuits at corresponding first and second voltages. During operation, the controller causes the first plurality of switches to transition between states. These transitions result in the second voltage being maintained at a value that is a multiple of the first voltage. The controller also causes the second plurality of switches to transition between states. These transitions resulting in capacitors being coupled or decoupled from the second voltage. The gate drivers derive, from the capacitors, charge for causing a voltage that enables switches from the first plurality of switches to be driven.

Abstract: A single supply RF switch driver. The single supply RF switch driver includes an inverter, where a first resistor has been integrated within the inverter, and the resistor is connected to an RF switch. In one aspect, the integration of the first resistor within the inverter allows for the elimination of a negative power supply for the inverter, while maximizing the isolation achieved in the RF switch. In another aspect, the driver is a configured to have a second resistor integrated within the inverter. A third resistor is connected between the gate of the RF switch and the inverter. In an alternate aspect, the driver operates from a positive power supply and a negative power supply, thus increasing the isolation in the RF switch even further.

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.