Abstract: A current sense circuit is provided. The circuit includes a current mirror circuit QN1, QN2, and diode-connected QP1, QP2, QP3, and QP4 with their bases connected together, stacking such that the diode-connected side (QN1, QP1, QP3) aligns and connecting the emitter of QP2 to the collector of QP4. Furthermore, the gates of MP1 and MP2 are connected to the collector of QN2 and QP2, respectively. Additionally, the source of MP1 is connected to the drain of MP3 via the source of MP2 and also connected to the source of a Sense MOS. Moreover, the emitter of QP4 is connected to the source of MP4 via R1, and the drain of MP4 is connected to the source (OUT terminal) of a Main MOS. Furthermore, the gates of MP3 and MP4 are connected to the emitters of QN1 and QN2.

Abstract: A semiconductor device includes: a local memory outputting a plurality of pieces of weight data in parallel; a plurality of product-sum operation units corresponding to the plurality of pieces of weight data; and a plurality of unit selectors corresponding to the product-sum operations units, supplied with a plurality of pieces of input data in parallel, selecting the one piece of input data from the supplied plurality of pieces of input data according to a plurality of pieces of additional information each indicating a position of the input data to be calculated with the corresponding product-sum arithmetic unit calculator in the pieces of input data, and outputting the selected input data. Each of the plurality of product-sum arithmetic units performs a product-sum operation between the weight data different from each other in the plurality of pieces of weight data and the input data outputted from the corresponding unit selector.

Abstract: There is formed a semiconductor device including, as the uppermost-layer wiring of the multilayer wiring layer, a plurality of first wirings, a second wiring, a plurality of first dummy wirings, a second dummy wiring, and a passivation film covering these wirings. The passivation film is patterned by etching with a photoresist film used as a mask, the plurality of first wirings and the plurality of first dummy wirings close thereto are densely formed, and the second dummy wiring is formed so as to surround a periphery of the second wiring sparsely formed directly above an analog circuit portion.

Abstract: A semiconductor device including an element isolation in a trench formed in an upper surface of a semiconductor substrate, a trench isolation including a void in a trench directly under the element isolation, and a Cu wire with Cu ball connected to a pad on the semiconductor substrate, is formed. The semiconductor device has a circular trench isolation arrangement prohibition region that overlaps the end portion of the Cu ball in plan view, and the trench isolation is separated from the trench isolation arrangement prohibition region in plan view.

Abstract: A collision avoidance system includes a periphery monitoring system which detects vehicles in proximity to a subject vehicle by use of a sensor, an approaching vehicle notifying system which communicates with another vehicle in proximity to the subject vehicle in vehicle-to-vehicle communication, and a detected vehicle comparison/determination system which is connected to the periphery monitoring system and the approaching vehicle notifying system, determines common vehicles detected by both the periphery monitoring system and the approaching vehicle notifying system, and controls the periphery monitoring system and the approaching vehicle notifying system.

Abstract: A semiconductor device includes a phase interpolation circuit including an N-bit current digital-analog conversion circuit, a switch circuit, a capacitive element, an inverter, and a control logic circuit. The control logic circuit detects an end of a phase interpolation operation by using an output result of the inverter and outputs a first control signal for turning off the current digital-analog conversion circuit. Also, the control logic circuit detects the end of the phase interpolation operation by using the output result of the inverter and outputs a second control signal for turning off the inverter.

Abstract: Systems and methods for evaluating a set of bounding boxes in a blended image are described. A system can include an integrated circuit configured to obtain expected bounding box data. The expected bounding box data can be based on coordinates data of an image. The integrated circuit can determine target coordinates based on the expected bounding box data. The integrated circuit can receive a blended image including a set of objects and a set of bounding boxes. The integrated circuit can extract pixel values located at the target coordinates in the blended image. The integrated circuit can identify an error relating to the set of bounding boxes based on the extracted pixel values and the expected bounding box data.

Abstract: The semiconductor device has the main surface, the semiconductor substrate having the first impurity region formed on the main surface, the first electrode formed on the main surface having the first impurity region, the insulating film formed on the main surface such that surround the first electrode, the second electrode formed on the insulating film such that spaced apart from the first electrode and annularly surround the first electrode, and the semi-insulating film. The first electrode has the outer peripheral edge portion. The semi-insulating film is continuously formed from on the outer peripheral edge portion to on the second electrode. The outer peripheral edge portion includes the first corner portion. The second electrode has the second corner portion facing the first corner portion. The semi-insulating film on the insulating film is removed between the first corner and the second corner portion.

Abstract: The present invention suppresses an increase in manufacturing cost and reduces switching noise. A field-effect transistor having a gate electrode embedded in a trench in an upper surface of a semiconductor substrate, a source region formed in the semiconductor substrate, and a drain region formed on a lower surface of the semiconductor substrate is provided with a gate wiring formed on the semiconductor substrate and being electrically connected to the gate electrode, a gate pad formed on the semiconductor substrate, a first resistor connected between the gate pad and the gate wiring and being configured to function when the field-effect transistor is turned ON, a second resistor connected between the gate pad and the gate wiring and being configured to function when the field-effect transistor is turned OFF, and a rectifier diode included in the first resistor or the second resistor between the gate pad and the gate wiring.

Abstract: A disconnection detector circuit that can favorably inspect a connection state of a wire without increase in parasitic capacitance is provided. A semiconductor device includes, in one package, a first integrated circuit including a transformer including a primary coil and a secondary coil, and a second integrated circuit connected to a midpoint and one end of the secondary coil. The second integrated circuit includes a reference line and a detector circuit. The reference line connects the midpoint of the secondary coil and a reference potential. On basis of a potential at a predetermined reference point of the first power supply line, the detector circuit detects whether a connection state between the second integrated circuit and the secondary coil is normal or abnormal.

Abstract: A semiconductor device includes a semiconductor package having a differential signal terminal pair, and a wiring board. The wiring board includes a first and a second signal transmission line and a reference potential plane. The first and the second signal transmission line is formed in a first conductive layer and connected to the differential signal terminal pair. The reference potential plane includes a conductive pattern formed in a different conductive layer from the first conductive layer. The conductive pattern includes a first and a second region overlapped with the first and the second signal transmission line in plan view, respectively. The conductive pattern has a plurality of openings in the first and the second region. An area of a first conductive portion of the reference potential plane in the first region becomes equal to an area of a second conductive portion of the reference potential plane in the second region.

Abstract: A semiconductor device includes a memory array having a plurality of associative memory cells arranged in a matrix form for storing entries. The memory array is divided into a plurality of memory blocks for sequentially performing a retrieval operation along a column direction, and further includes a plurality of match lines corresponding to the respective memory blocks and provided correspondingly to each memory cell row, a plurality of search lines corresponding to the respective memory blocks and provided correspondingly to each memory cell column, and a plurality of match amplifiers corresponding to the respective memory blocks and provided to the plurality of match lines. The match line provided correspondingly to the preceding memory block is set to become shorter than the match line provided correspondingly to the subsequent memory block.

Abstract: According to an aspect, a transceiver comprises a transmitter section having a first PLL (phased locked loop) providing a first reference signal to the transmitter section, a receiver section having a second PLL providing a second reference signal to the receiver section, a coupler coupling the second PLL to the transmitter section when the transceiver is operative in a test mode measuring a first noise component introduced by the first PLL. The first reference signal is coupled to the receiver section internally within the transceiver as a local reference signal to the receiver section both in the test mode and a functional mode.

Abstract: Speed enhancement of data reading is achieved while suppressing an influence of an offset voltage of a differential amplifier.

Abstract: The source region, drain region, buried insulating film, gate insulating film, and gate electrode of the semiconductor device are formed in a main surface of a semiconductor substrate. The buried insulating film is buried in a first trench formed between the source and drain regions. The first trench has a first side surface and a first bottom surface. The first side surface faces the source region in a first direction extending from one of the source and drain regions to the other. The first bottom surface is connected to the first side surface and is along the main surface of the semiconductor substrate. A crystal plane of a first surface of the semiconductor substrate, which is the first side surface of the first trench, is (111) plane. A crystal plane of a second surface of the semiconductor substrate, which is the bottom surface of the first trench, is (100) plane.

Abstract: Systems and methods for sensing and processing biosignals are described. An example system can include a first device configured to sense at least one biosignal and a second device. The second device can receive the at least one biosignal from the first device. The second device can receive power via a first wireless interface. The second device can charge a rechargeable battery using the received power. The second device can receive a signal via the first wireless interface, wherein the signal encodes credentials of a user. The second device can demodulate the signal to decode the user credentials. The second device can authenticate the user credentials. The second device can, in response to authentication of the user credentials, communicate the at least one biosignal to a user device via a second wireless interface.

Abstract: Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

Abstract: A filter circuit for use with a system configured to be coupled with an electrical load, the filter circuit comprising a first filter, wherein the first filter is configured to receive a first voltage and provide an output voltage, the output voltage being the first voltage after filtering by the first filter, and the filter circuit is configured to adjust the bandwidth of the first filter in response to a load transient.

Abstract: According to one embodiment, a semiconductor device includes a first chip and a second chip arranged on a substrate, the first chip outputs first time stamp data and first trace data in which a time stamp value is associated with a first execution result obtained by executing software, the second chip outputs second trace data in which a difference value with a marker is associated with a second execution result obtained by executing the software, the second execution result obtained by the second chip executing the software is associated with a third time stamp value calculated based on a second time stamp value and the difference value in a debugger.

Abstract: A data processing device includes: an input data determining unit configured to determine whether or not each of binarized input data is a predetermined value; a storage unit configured to store a plurality of coefficients and coefficient address information including information related to coefficient addresses where the plurality of coefficients are stored; a control unit configured to read the coefficient address from the storage unit based on a determination result of the input data determining unit and read the coefficient from the storage unit based on the coefficient address; and an arithmetic unit configured to execute an arithmetic operation related to the coefficient acquired by the control unit.