Abstract: The semiconductor device includes a tab including a chip supporting surface, and a back surface opposite to the chip supporting surface; a plurality of suspension leads supporting the tab; a plurality of leads arranged between the suspension leads; a semiconductor chip mounted on the chip supporting surface of the tab, the semiconductor chip including a main surface, a plurality of pads formed on the main surface, and a rear surface opposite to the main surface; a seal portion sealing the semiconductor chip such that a part of each of the leads is exposed from the seal portion; and a Pb-free solder formed on the part of each of the leads. A part of the rear surface of the semiconductor chip is contacted with the seal portion.

Abstract: A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.

Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.

Abstract: A gateway apparatus for performing transfer control of frame data between a plurality of different communication channels is provided with a time stamp unit for adding time stamp information to received frame data and a data discarding unit for determining processing delay of the frame data or abnormality of the apparatus by referring to the time stamp information and for deleting the time stamp information added to the frame data at the time of sending the frame data.

Abstract: An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.

Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.

Abstract: A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in contact with the insulating layer, with joint surfaces to a channel region disposed along crystal orientation faces of said semiconductor layer; and impurity-doped layers formed in a self-aligned manner along interfaces of the alloy layer or the metal layer, and said semiconductor layer.

Abstract: A multiple-port semiconductor memory device capable of achieving a smaller circuit area is provided. A power supply line supplying an operation voltage of a memory cell is formed in an identical metal interconnection layer where word lines are formed and it is provided adjacent to and between corresponding first word line and second word line. Then, for example, when the same memory cell row is accessed, a voltage level of the power supply line is raised by a coupling capacitance of the word lines. Thus, even in identical-row-access, static noise margin in identical-row-access can be maintained to be as great as that in different-row-access. Therefore, for example, even when a size or the like of a driver transistor is not made larger, deterioration of static noise margin can be suppressed and a circuit area can be made smaller.

Abstract: A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrate); and after the introduction of the nitrogen, applying heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer.

Abstract: The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.

Abstract: A switching power supply device performs a stable operation with fast response for a semiconductor integrated circuit device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction.

Abstract: A processor system including: a processor and controller core connected via an internal bus; and a plurality of synchronous memory chips connected to the processor via an external bus; the controller core including a mode register selected by an address signal from the processor core and written with an information by a data signal from the processor core to select the operation mode of the plurality of synchronous memory chips, and a control unit to prescribe the operate mode to the plurality of synchronous memory chips based on the information written in the mode register, wherein the controller core outputs a mode setting signal based on the information written in the mode register or an access address signal from the processor core to the plurality of synchronous memory chips via the external bus selectively; and wherein the clock signal is commonly supplied to the plurality of synchronous memory chips.

Abstract: An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.

Abstract: The present invention provides a semiconductor device capable of preventing occurrence of cracking and the like, taking a large area, where wiring and the like that function as elemental devices can be arranged, within a plurality of interlayer insulation films, and reducing production cost. The semiconductor device according to the present invention has a low dielectric constant film having a dielectric constant of not less than 2.7. In the low dielectric constant film and the like, materials (e.g., a first dummy pattern, a second dummy pattern) with a larger hardness than that of the low dielectric constant film are formed at a part under a pad part.

Abstract: Control technique of a synchronous motor capable of suppressing rotation pulsation caused by individual difference without complicating control algorithm is provided. A pulsation generator superimposing a pulsation component anticipated in advance to a current command for the synchronous motor and a correction current generator superimposing a correction signal substantially having an average value of zero to the current command are provided in a synchronous motor control device. By this configuration, the correction signal suppressing a distortion component is superimposed to a value of the current command with a simplified control configuration. Torque pulsation is suppressed by determining the correction signal from difference between a detection current and a command current.

Abstract: The present invention provides a semiconductor device capable of preventing occurrence of cracking and the like, taking a large area, where wiring and the like that function as elemental devices can be arranged, within a plurality of interlayer insulation films, and reducing production cost. The semiconductor device according to the present invention has a low dielectric constant film having a dielectric constant of not less than 2.7. In the low dielectric constant film and the like, materials (e.g., a first dummy pattern, a second dummy pattern) with a larger hardness than that of the low dielectric constant film are formed at a part under a pad part.

Abstract: A semiconductor device has a sealing body formed of an insulating resin and a semiconductor chip positioned within the sealing body. A gate electrode and a source electrode are on a first main surface of the semiconductor chip and a back electrode (drain electrode) is on a second main surface thereof. An upper surface of a portion of a drain electrode plate that projects in a gull wing shape is exposed from the sealing body and a lower surface thereof is connected to the back electrode through an adhesive. A gate electrode plate projects in a gull wing shape on an opposite end side of the sealing body and is connected to the gate electrode within the sealing body. A source electrode plate projects in a gull wing shape on the opposite end side of the sealing body and is connected to the source electrode within the sealing body.

Abstract: A transmit packet generated by a CPU 1 is held in a buffer 100a (100b). From among packets received from Ethernet 820a (820b), a packet, a destination of which is a communication device 800, is held in the buffer 100a (100b). A packet which should be transmitted is transmitted from a transfer judging circuit 200 to Ethernet 820a or 820b through a MAC unit 300a or 300b. If a transfer judging circuit 200 judges a packet from the Ethernet 820a to be a packet, a destination of which is another communication device, with reference to a destination MAC address, this packet is transferred to the Ethernet 820b through MAC 300b. If a usage rate of a transferring FIFO buffer 130a (130b) exceeds a threshold value in the process of transmitting a packet held in a transmitting FIFO buffer 120a (130b) on a priority basis, the priority order of a transfer packet is made higher than that of a transmit packet so that the transfer packet is transferred to the Ethernet 820a or 820b in preference to the transmit packet.

Abstract: As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductor layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.

Abstract: An exemplary method is disclosed to accurately estimate the center frequency of a narrow-band interference (NBI). The exemplary method uses multi-stage autocorrelation-function (ACF) to estimate an NBI frequency. The exemplary method allows an accurate estimation of the center frequency of NBI in an Ultra-Wideband system. A narrow band interference (NBI) estimator based on such a method allows a low complexity hardware implementation. The exemplary method estimates the frequency in multiple stages. Each stage performs an ACF operation on the received signals. The first stage gives an initial estimation and the following stages refine the estimation. The results of all stages are combined to produce the final estimation. An apparatus based on such a multi-stage narrow band interference frequency detector is also disclosed to improve the accuracy by combining various filters with the detector.