Abstract: A semiconductor device comprises: a package substrate having a plurality of bonding electrodes arranged in a peripheral region of a main surface thereof and wirings connected to the respective bonding electrodes and electrolessly plated; a semiconductor chip mounted on the package substrate; a plurality of wires connecting pads of the semiconductor chip and the bonding electrodes; a sealing body for sealing the semiconductor chip and the wires with resin; and a plurality of solder balls arranged on the package substrate. The wirings are formed only at the inner side of the plurality of bonding electrodes on the main surface of the package substrate, and no solder resist film is formed at the outer side of the plurality of bonding electrodes. With this arrangement, the region outside the bonding electrodes can be minimized and the semiconductor device can be downsized without changing the size of the chip mounted thereon.

Abstract: The present invention provides a technique capable of achieving area reduction on a semiconductor integrated circuit device mounted with a time sharing virtual multi port memory or the like. By providing a configuration including a single port memory, data latch circuit for plural ports, a selector for selecting a port to be connected to the single port memory, a time sharing control signal generating circuit and the like, in which an operation termination signal inside the single port memory (a word line rising signal, a sense amplifier driving signal for data read or the like) is inputted to the time sharing control signal generating circuit to produce a port switching control signal and an operation control signal for the single port memory, a time sharing virtual multi port memory with a reduced area can be realized which requires no clock generating circuit for time sharing control newly.

Abstract: A driving circuit provided by the present invention is characterized in that the driving circuit selects a gray-scale voltage in accordance with high-order bits of display data from a group of gray-scale voltages with their voltage level varying step by step from fractional time period to fractional time period, which are set in advance, and outputs the selected gray-scale voltage during a time period between the start of a scanning period and a time at which a number assigned to a fractional time period matches quantitative information contained in low-order bits of the display data. In addition, the driving circuit provided by the present invention is also characterized in that the time ratio of the first fractional time period is set at a relatively high value while the time ratios of the second and subsequent fractional time periods are each set at a relatively low value.

Abstract: A memory system including large-capacity ROM and RAM in which high-speed reading and writing are enabled is provided. A memory system including a non-volatile memory (CHIP1), DRAM (CHIP3), a control circuit (CHIP2) and an information processing device (CHIP4) is configured. Data in FLASH is transferred to SRAM or DRAM in advance to speed up. Data transfer between the non-volatile memory (FLASH) and DRAM (CHIP3) can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. Data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction.

Abstract: A data processing device includes a processor core, and a memory interface portion arranged between the processor core and an external memory mapped into a predetermined external memory space. The memory interface portion includes a fetch circuit for receiving an address value for access to the external memory space from the processor core, and fetching the data at the address in the external memory, a translator for translating the nonnative instruction fetched from the external memory into the native instruction, and a select circuit for selectively applying the data read from the external memory space and the instruction prepared by translating the instruction read from the external memory space by the translator to the processor core depending on whether the address value for the access to the external memory space is in a predetermined region or not.

Abstract: A CAN module receives a message from a CAN bus to store the same in a message box unit of a message box. A reception request signal is output from the message box unit to a DMAC/IF. The DMAC/IF outputs a 7-bit encoded address together with a transfer request signal. A DMAC accesses a selected message box unit of the CAN module and a memory based on the transfer request signal and the 7-bit encoded address to transfer the message stored in the selected message box unit to the memory.

Abstract: A semiconductor integrated circuit device provided with a first circuit block BLK1, a second circuit block DRV1 and a conversion circuit MIO1 for connecting the first circuit block to the second circuit block. The first circuit block includes a first mode for applying a supply voltage and a second mode for shutting off the supply voltage. The conversion circuit is provided with a function for maintaining the potential of an input node of the second circuit block at an operation potential, thereby suppressing a penetrating current flow when the first circuit block is in the second mode. The conversion circuit (MIO1 to MIO4) are commonly used for connecting circuit blocks.

Abstract: A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.

Abstract: Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.

Abstract: To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory, a polycrystalline silicon film 7 and an insulating film 8 are sequentially stacked on a gate insulating film 6, then the polycrystalline silicon film 7 and the insulating film 8 are patterned to form gate electrodes 7A, 7B, and then sidewall spacers 12 including a silicon oxide film are formed on sidewalls of the gate electrodes 7A, 7B. After that, a silicon nitride film 19 is deposited on a substrate 1 by a plasma enhanced CVD process so that the gate electrodes 7A, 7B are not directly contacted to the silicon nitride film 19.

Abstract: In a low power consumption mode in which prior data is retained upon power shutdown, the return speed thereof is increased. While use of an existent data retaining flip-flop may be considered, this is not preferred since it increases area overhead such as enlargement of the size of a cell. A power line for data retention for power shutdown is formed with wirings finer than a usual main power line. Preferably, power lines for a data retention circuit are considered as signal lines and wired by automatic placing and mounting. For this purpose, terminals for the power line for data retention are previously designed by providing the terminals therefore for the cell in the same manner as in the existent signal lines. Additional layout for power lines is no longer necessary for the cell, which enables a decrease in the area and design by an existent placing and routing tool.

Abstract: A level shift element adjusting a voltage level at the time of selection of a word line according to fluctuations in threshold voltage of a memory cell transistor is arranged for each word line. This level shift element lowers a driver power supply voltage, and transmits the level-shifted voltage onto a selected word line. The level shift element can be replaced with a pull-down element for pulling down the word line voltage according to the threshold voltage level of the memory cell transistor. In either case, the selected word line voltage level can be adjusted according to the fluctuations in threshold voltage of the memory cell transistor without using another power supply system. Thus, the power supply circuitry is not complicated, and it is possible to achieve a semiconductor memory device that can stably read and write data even with a low power supply voltage.

Abstract: A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for converting the frequency of a signal supplied from a baseband. A plurality of ball electrodes are provided on the back surface of the package substrate. The package substrate is provided with a first common GND wire for supplying a GND potential to each of the LNAs, with a second common GND wire for supplying the GND potential to the RF VCO, and with a third common GND wire for supplying the GND potential to the IF VCO. The first, second, and third common GND wires are separated from each other.

Abstract: A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a chip. In the semiconductor integrated circuit device, power shutdown priorities are provided by independent power domains (Area A to Area I). A method for preventing a power domain having a lower priority from being turned OFF when a circuit having a high priority is turned ON is also provided.

Abstract: It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (167a to 167c) is selectively formed in an upper layer portion of the SOI layer (171) with a part of the SOI layer (171) remaining as a P? well region (169). Consequently, an isolation (partial isolation) structure is obtained. An N+ diffusion region (168) is formed in the SOI layer (171) between the isolating oxide films (167a) and (167b) and a P+ diffusion region (170) is formed in the SOI layer (171) between the isolating oxide films (167b) and (167c). Consequently, there is obtained a junction type variable capacitance (C23) having a PN junction surface of the P? well region (169) provided under the isolating oxide film (167b) and the N+ diffusion region (168).

Abstract: To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores information depending on a change in its state caused by applied heat, as well as an input/output circuit, and to turn off the word line until the power supply circuit is activated. According to the present invention, unwanted current flow to the element can be prevented and thereby data destruction can be prevented.

Abstract: The present invention provides a technology which can suppress a variation in a value after a write operation to minimum so as to facilitate multi-bit operation in a semiconductor device such as a phase change memory. A semiconductor device includes: a memory cell having a storage element (phase change material) that stores information depending on a state change by temperature; an I/O circuit; and means which, when writing data, performs a set operation and an operation for writing desired data, measures a resistance value of the storage element by means of a verify operation, and when the resistance value is not within a target range, performs the set operation and the write operation again while changing a voltage to be applied to the storage element.

Abstract: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Abstract: The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

Abstract: In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.