Patents Assigned to Research Corporation
  • Publication number: 20220305555
    Abstract: Aspects relate to method of zinc-comprising nanowire fabrication, the method comprising forming a starting material comprising zinc metal or zinc metal alloy and at least one reactive metal, and exposing the starting material to one or more alcohols to obtain a reaction product comprising zinc-comprising nanowires, wherein the at least one reactive metal is more reactive than zinc to the one or more alcohols.
    Type: Application
    Filed: March 23, 2022
    Publication date: September 29, 2022
    Applicant: Georgia Tech Research Corporation
    Inventors: Gleb YUSHIN, Wenqiang HU, Samik JHULKI, Wenbin FU, Kostiantyn TURCHENIUK
  • Publication number: 20220299877
    Abstract: The present disclosure relates to post-application treatment of a radiation-sensitive film to provide a hardened resist film. In some instances, such films can be used to form a pattern by a positive tone wet development process.
    Type: Application
    Filed: October 8, 2020
    Publication date: September 22, 2022
    Applicant: Lam Research Corporation
    Inventors: Timothy William Weidman, Katie Lynn Nardi, Dries Dictus, Benjamin Kam, Chenghao Wu, Eric Calvin Hansen, Nizan Kenane, Kevin Li Gu
  • Patent number: 11450631
    Abstract: In one example, a method for redistribution layer (RDL) process is described. A substrate is provided. A dielectric layer is deposited on top of the substrate. The dielectric layer is patterned. A barrier and copper seed layer are deposited on top of the dielectric layer. A photoresist layer is applied on top of the barrier and copper seed layer. The photoresist layer is patterned to correspond with the dielectric layer pattern. Copper is electrodepositing in the patterned regions exposed by the photoresist layer. The photoresist layer is removed. The copper and seed barrier are etched.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: September 20, 2022
    Assignee: Lam Research Corporation
    Inventors: Justin Oberst, Bryan L. Buckalew, Stephen J. Banik
  • Patent number: 11446634
    Abstract: Methods of making a poly(propylenimine) (PPI) sorbent, a PPI sorbent, structures including the PPI sorbent, methods of separating CO2 using the PPI sorbent, and the like, are disclosed.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: September 20, 2022
    Assignees: Georgia Tech Research Corporation, Global Thermostat Operations, LLC
    Inventors: Simon H. Pang, Christopher W. Jones, Li-Chen Lee, Miles A. Sakwa-Novak, Michele Sarazen
  • Patent number: 11450532
    Abstract: A method for selectively etching a first region of a structure with respect to a second region of the structure is provided. The method comprises at least one cycle. Each cycle comprises selectively depositing an inhibitor layer on the first region of the structure, providing an atomic layer deposition over the structure, wherein the atomic layer deposition selectively deposits a mask on the second region of the structure with respect to the inhibitor layer, and selectively etching the first region of the structure with respect to the mask. The selectively depositing an inhibitor layer on the first region of the structure comprises providing an inhibitor layer gas and forming the inhibitor layer gas into inhibitor layer radicals, wherein the inhibitor layer radicals selectively deposit on the first region of the structure with respect to the second region of the structure.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: September 20, 2022
    Assignee: Lam Research Corporation
    Inventors: Younghee Lee, Daniel Peter, Samantha SiamHwa Tan, Yang Pan
  • Patent number: 11447870
    Abstract: Embodiments of the present disclosure relates generally to methods of providing biomimetic superhydrophobic coatings to substrates, and more specifically to providing biomimetic inorganic silica or silane-based coatings that enable tunable hierarchical surface structures with high coating-to-substrate adhesion, resistance to various mechanical abradents, durability, shelf stability, and enhanced non-wettability or water-repellency.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: September 20, 2022
    Assignee: Georgia Tech Research Corporation
    Inventors: Cornelia Rosu, Laurens Victor Breedveld, Dennis W. Hess
  • Patent number: 11450513
    Abstract: Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: September 20, 2022
    Assignee: Lam Research Corporation
    Inventors: Wenbing Yang, Tamal Mukherjee, Mohand Brouri, Samantha Tan, Yang Pan, Keren Jacobs Kanarik
  • Patent number: 11441222
    Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: September 13, 2022
    Assignee: Lam Research Corporation
    Inventors: Fayaz Shaikh, Nick Linebarger, Curtis Bailey
  • Patent number: 11443975
    Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
    Type: Grant
    Filed: March 31, 2020
    Date of Patent: September 13, 2022
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Patrick Breiling, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, Ishtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
  • Publication number: 20220282018
    Abstract: A thermoplastic elastomer composition includes about 80 parts by weight of an ethylene propylene diene monomer (EPDM) including 5-ethylidene-2-norbornene (ENB) and polyethylene, about 30 parts by weight to about 70 parts by weight of polypropylene, about 20 parts by weight to about 40 parts by weight of a filler, and about 60 parts by weight to about 90 parts by weight of a plasticizer.
    Type: Application
    Filed: November 22, 2021
    Publication date: September 8, 2022
    Applicants: HYUNDAI MOTOR COMPANY, Kia Corporation, HWASEUNG Material Co., Ltd., Research & Business Foundation SUNGKYUNKWAN UNIVERSITY
    Inventors: Sang Hyun LEE, JeeHoon SEONG, Ho Dong KIM, Jonghwan SUHR, Bumyong YOON, Seunghyun CHO, Kyoung-Min HONG, Sang Hyun LEE
  • Publication number: 20220282366
    Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.
    Type: Application
    Filed: August 28, 2020
    Publication date: September 8, 2022
    Applicant: Lam Research Corporation
    Inventors: Matthew Scott Weimer, Ragesh Puthenkovilakam, Gordon Alex Macdonald, Shaoqing Zhang, Shih-Ked Lee, Jun Xue, Samantha S.H. Tan, Xizhu Zhao, Mary Anne Manumpil, Eric A. Hudson, Chin-Jui Hsu
  • Patent number: 11433353
    Abstract: Methods and systems for the separation of hydrogen isotopes from one another are described. Methods include utilization of a hydrogen isotope selective separation membrane that includes a hydrogen isotope selective layer (e.g., graphene) and a hydrogen ion conductive supporting layer. An electronic driving force encourages passage of isotopes selectively across the membrane at an elevated separation temperature to enrich the product in a selected hydrogen isotope.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: September 6, 2022
    Assignees: Savannah River Nuclear Solutions, LLC, Clemson University Research Foundation, Georgia Tech Research Corporation
    Inventors: Dale A. Hitchcock, Steven M. Serkiz, Timothy M. Krentz, Josef A. Velten, Kyle S. Brinkman, Eric M. Vogel, Katherine T. Young
  • Patent number: 11433138
    Abstract: An embodiment of the present disclosure can include a nanocarrier for delivering a cargo to a cell comprising: a bundle domain and a binding domain, the binding domain configured to bind to the cargo. An embodiment of the present disclosure can include a method for delivering a cargo to a cell comprising: introducing an amino-acid based nanocarrier to the cell, the nanocarrier can comprise an alpha-helical protein bundle domain and a binding domain, the cargo can bound to the binding domain and the cargo can be therapeutic cargo.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: September 6, 2022
    Assignee: Georgia Tech Research Corporation
    Inventors: Julie Champion, Sung In Lim, Anshul Dhankher
  • Patent number: 11434567
    Abstract: A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: September 6, 2022
    Assignee: Lam Research Corporation
    Inventors: Adrien LaVoie, Hu Kang, Karl Frederick Leeser
  • Patent number: 11437219
    Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.
    Type: Grant
    Filed: May 27, 2020
    Date of Patent: September 6, 2022
    Assignee: Lam Research Corporation
    Inventors: Maolin Long, Yuhou Wang, Ying Wu, Alex Paterson
  • Publication number: 20220275531
    Abstract: A method of electroplating a metal into features, having substantially different depths, of a partially fabricated electronic device on a substrate is provided. The method includes adsorbing accelerator into the bottom of recessed features; partially filling the features by a bottom up fill mechanism in an electroplating solution; diffusing leveler into shallow features to decrease the plating rate in shallow features as compared to deep features; and electroplating more metal into the features such that the height of metal in deep features is similar to the height of metal in shallow features.
    Type: Application
    Filed: July 22, 2020
    Publication date: September 1, 2022
    Applicant: Lam Research Corporation
    Inventors: Stephen J. Banik, Jacob Kurtis Blickensderfer, Kailash Venkatraman, Justin Oberst, Lee Peng Chua, Bryan L. Buckalew, Steven T. Mayer
  • Publication number: 20220275510
    Abstract: Silicon oxide, silicon nitride, and silicon oxynitride films may be deposited by thermal atomic layer deposition (thermal ALD) in a single wafer plasma reactor. The single wafer plasma reactor can perform thermal ALD and plasma-enhanced atomic layer deposition (PEALD). Highly conformal films may be deposited at a high deposition rate without damaging or with minimal damage to the substrate using thermal ALD. The substrate may be heated at an elevated temperature during oxidation and/or nitridation. In some implementations, the elevated temperature is between about 500 C and about 750 C. In some implementations, hydrogen and oxygen may be flowed as reactant gases during oxidation, where the hydrogen and oxygen may react in an exothermic reaction to drive formation of oxide.
    Type: Application
    Filed: July 24, 2020
    Publication date: September 1, 2022
    Applicant: Lam Research Corporation
    Inventors: Awnish GUPTA, Tengfei MIAO, Adrien LAVOIE, Douglas Walter AGNEW, Ian John CURTIN
  • Patent number: 11427908
    Abstract: Various embodiments include an apparatus to supply precursor gases to a processing tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a processing chamber of the processing tool. The manifold body has a multiple precursor-gas outlet ports surrounded by an annulus. A purge-gas outlet port of the manifold body is directed substantially toward interior walls of the annulus. For each of multiple precursor gases, the POU-valve manifold further includes: a first valve coupled to the manifold body and a divert valve coupled to the first valve. The first valve can be coupled to a precursor-gas supply and has a separate precursor-gas flow path internal to the manifold body. The divert valve diverts the precursor gas during a period when the precursor gas is not to be directed into the processing chamber by the first valve. Other examples are disclosed.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: August 30, 2022
    Assignee: Lam Research Corporation
    Inventors: Damodar Rajaram Shanbhag, Nagraj Shankar
  • Patent number: D962881
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: September 6, 2022
    Assignee: Lam Research Corporation
    Inventor: Eller Y. Juco
  • Patent number: D965174
    Type: Grant
    Filed: July 17, 2020
    Date of Patent: September 27, 2022
    Assignee: ZYMO RESEARCH CORPORATION
    Inventors: Xi-Yu Jia, Marc E. Van Eden, Stanislav Forman