Abstract: A bottom ring is configured to support a moveable edge ring. The edge ring is configured to be raised and lowered relative to a substrate support. The bottom ring includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, and a plurality of vertical guide channels provided through the bottom ring from the lower surface to the upper surface of the bottom ring. Each of the guide channels includes a first region having a smaller diameter than the guide channel, and the guide channels are configured to receive respective lift pins for raising and lowering the edge ring.

Abstract: A method for adjusting a height of an edge ring arranged around an outer portion of a substrate support includes receiving at least one input indicative of one or more erosion rates of the edge ring. The at least one input includes a plurality of erosion rates for respective usage periods of a substrate processing system. The method further includes determining at least one erosion rate of the edge ring using the plurality of erosion rates for the respective usage periods, monitoring an overall usage of the edge ring and storing the overall usage of the edge ring in a memory, calculating an amount of erosion of the edge ring based on the determined at least one erosion rate and the overall usage of the edge ring, and adjusting the height of the edge ring based on the calculated amount of erosion to compensate for the calculated amount of erosion.

Abstract: A shape-morphing structure includes a cold draw programmable grayscale digital light processing 3D printed unitary hinge component comprising at least one glassy state portion and at least one rubbery state portion. The at least one glassy state portion has a glassy state recovery temperature and the at least one rubbery state portion has a rubbery state recovery temperature and different than the glassy state recovery temperature.

Abstract: A video coding method and apparatus select an optimal method from among various chrominance space conversion methods for the current chroma block's original signals, predictors, or residual signals, based on correlations between chroma channel components. The video coding method and the apparatus perform chrominance space conversion of Cb and Cr components using the selected method.

Abstract: A transformational energy efficient technology using ionic liquid (IL) to couple with monoethanolamine (MEA) for catalytic CO2 capture is disclosed. [EMmim+][NTF2?] based catalysts are rationally synthesized and used for CO2 capture with MEA. A catalytic CO2 capture mechanism is disclosed according to experimental and computational studies on the [EMmim+][NTF2?] for the reversible CO2 sorption and desorption.

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

Abstract: Disclosed herein are an exemplary apparatus, system, and methods (e.g., Tactical Passive RFID transponder gloves with Morphological Actuation) comprising a glove made predominately of a resistive fabric that varies resistance per degree of deformation; comprising near field communication RFID tag readers, and a controller coupled to the glove to evaluate the varied resistance. A method of classifying RFID tags is also disclosed.

Abstract: Metal substrates comprising a colored coating and/or a protective coating disposed on at least a surface of the substrate. The colored coating can include a metal oxide coating integrally bonded to the terminal and produced by heat tinting or a titanium nitride containing material. The protective coating is derived from a material comprising one or more of aluminum oxide, silicon oxide, a superhydrophobic material, wherein the protective coating has a Scratch Resistance of at least about F, as determined by ASTM D336. Methods of making and using the coated metal substrates are also disclosed.

Abstract: An edge ring is configured to be raised and lowered relative to a substrate support, via one or more lift pins, in a substrate processing system. The edge ring is further configured to interface with a guide feature extending upward from a bottom ring and/or a middle ring of the substrate support during tuning of the edge ring. The edge ring includes an upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and an annular groove arranged in the lower surface of the edge ring to interface with the guide feature. Walls of the annular groove are substantially vertical.

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Vapor accumulator reservoirs for semiconductor processing operations, such as atomic layer deposition operations, are provided. Such vapor accumulator reservoirs may include a perimeter plenum volume filled with an inert gas, which may reduce or prevent the leakage of external contaminants into a process gas. In some implementations, the reservoir may be constructed from corrosion-resistant materials to reduce internal contaminants into the process gas.

Abstract: A gas conditioning apparatus comprising a substrate block comprising one or more fluid ports on an upper surface of the substrate block. The substrate block has a first length along a sidewall. The substrate block comprises an inlet port at a first end and an outlet port at a second end. A flow passage extends within the substrate block between the inlet port and the outlet port and is in fluidic communication with the one or more fluid ports. At least one heater strip is on the sidewall of the substrate block. The at least one heater strip extends between the first end and the second end and is to control an internal temperature within a zone of the substrate block. The zone has a second length that is less than or substantially equal to the first length.

Abstract: A patterning method includes etching a mask formed above a stack of two or more layers where the mask comprises a first patterned structure, a second patterned structure above the first patterned structure, where portions of the second patterned structure intersect the first patterned structure to form intersections and at least an opening. The mask includes a structure vertically between portions of the second patterned structure and the stack. The method includes etching a first layer of the stack through the opening and exposing a top surface of a second layer below the first layer, etching and removing the first patterned structure and the second patterned structure selectively to the first layer and the top surface of the second layer to form a planar mask comprising the first layer. The method further includes etching the second layer of the stack using the planar mask.

Abstract: Described is a wafer chuck assembly comprising a platen with one or more plasma electrodes, and a radio frequency (RF) assembly comprising at least one RF conductor electrically coupled to the one or more plasma electrodes. The at least one RF conductor comprises a rod with a rod tip coupled to the one or more plasma electrodes, and a rod stem mechanically coupled to a thermal choke with a hollow interior. The rod comprises a first electrically conductive material and has a first width and a first length. The thermal choke comprises a second electrically conductive material, and has a second width and a second length; and the second width is equal or greater than the first width.

Abstract: An embodiment of the disclosed technology provides a microfluidic cooling device including a microfluidic pathway and a thermoelectric cooling element. The microfluidic pathway can include an inlet to receive a sample at a first temperature and an outlet to output a first phase and second phase of the sample at a second temperature. The sample can include a first liquid, a second liquid, and a plurality of soluble particles. The first phase can include the first liquid and a portion of the soluble particles that is more soluble in the first liquid than second liquid. The second phase can include the second liquid and a portion of the soluble particles that more soluble in the second liquid than first liquid. The thermoelectric cooling element can be in thermal communication with the microfluidic pathway and can transition the sample from the first temperature to the second temperature.

Abstract: A manifold assembly for a processing chamber in a substrate processing system includes a manifold. The manifold includes a first valve assembly configured to flow a liquid coolant at a first temperature from a first channel of a coolant assembly to the processing chamber. The first valve assembly is configured to flow the liquid coolant at a cryogenic temperature. The manifold further includes a first weldment block including tubing associated with the first valve assembly, a second valve assembly configured to flow the liquid coolant at a second temperature greater than the first temperature from a second channel of the coolant assembly to the processing chamber, and a second weldment block including tubing associated with the second valve assembly. An insulative housing enclosing the first valve assembly, the first weldment block, and the second weldment block. The insulative housing is comprised of a plurality of layers of an insulative material.

Abstract: A method for synthesizing a sol solution for forming porous alumina films having high heat resistance and high specific surface area and excellent adhesion to various substrate surfaces is provided. The method can include preparing an alkoxysilane and an aluminum solution separately, precipitating a silicon compound adsorbed on aluminum hydroxide in a solution of the alkoxysilane and the aluminum solution, and washing the precipitate filtered from the mixed solution with water to prepare a precipitate cake. A slurry solution is prepared by adding water to the precipitate cake, a pH adjusting treatment is performed on the slurry solution, and then an autoclave treatment is performed to prepare SiO2Al2O3 containing sol solution. A pH value of the slurry solution is controlled within a specific pH range in which the solution state of the SiO2Al2O3 containing sol solution after the autoclave treatment is a sol state.

Abstract: A method for operating a plasma chamber to increase ion energy and decrease angular spread of ions during an etch operation is described. Method includes placing a substrate on an electrostatic chuck within the plasma chamber, wherein the electrostatic chuck is electrically coupled to a node. Method further includes forming a plasma in the plasma chamber, where the plasma produces a sheath with a first sheath voltage. The method further includes increasing the first sheath voltage to a second sheath voltage by applying a non-sinusoidal voltage at the electrostatic chuck and by applying a sinusoidal voltage at the electrostatic chuck, where a sum of the non-sinusoidal voltage and the sinusoidal voltage creates a voltage response on the electrostatic chuck that effectuates a change in a spread in ion energy at the wafer.

Abstract: A wafer processing apparatus comprising a vacuum chamber, the vacuum chamber comprising a wafer transfer arm and a wafer transfer paddle coupled to the wafer transfer arm. The wafer transfer paddle comprises at least one minimum contact area (MCA) feature integral with an upper surface of the wafer transfer paddle and extending a z-height over the upper surface of the wafer transfer paddle. The wafer transfer paddle comprises a gas flow bypass structure on or adjacent to the MCA feature.