Patents Assigned to Research Corporation
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Patent number: 12106946Abstract: A processing chamber and method of etching a semi-conductor substrate are presented. The processing chamber is symmetric, with the centerlines of a chuck and stem of a stage to retain a semi-conductor substrate aligned with a centerline of a passage in a core of a pump used to evacuate the processing chamber and with a center-line of a gas port through which gas is introduced to the processing chamber. The stem extends through the passage and a spiral groove is formed in the passage in only one of the stem or an inner surface of the core to provide pumping action to counter back streaming of the gas from an exhaust of the pump in an intermediate and viscous flow regime inside a gap between the stem and the core.Type: GrantFiled: March 13, 2020Date of Patent: October 1, 2024Assignee: Lam Research CorporationInventors: Thorsten Lill, Mariusch Gregor
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Patent number: 12106947Abstract: A substrate processing system includes a drive circuit, an RF reference measuring circuit, and a make-break connector. The drive circuit generates an RF drive signal at a first RF frequency. The RF reference measuring circuit includes an LC circuit having an input impedance and an output impedance. An output of the LC circuit connects to an RF power meter and a dummy load. The make-break connector connects the drive circuit to one of the RF reference measuring circuit and a processing chamber load including a component of the substrate processing system. An output impedance of the drive circuit matches an impedance of an input impedance of the LC circuit. The output impedance of the drive circuit does not match impedances of the RF power meter and the dummy load. The LC circuit matches the impedance of the drive circuit to the RF power meter and the dummy load.Type: GrantFiled: March 19, 2021Date of Patent: October 1, 2024Assignee: Lam Research CorporationInventor: Maolin Long
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Patent number: 12102692Abstract: Provided herein are materials and methods for efficiently delivering nucleic acids to cochlear and vestibular cells.Type: GrantFiled: October 5, 2021Date of Patent: October 1, 2024Assignees: Massachusetts Eye and Ear Infirmary, Schepens Eye Research Institute, Children's Medical Center CorporationInventors: Konstantina Stankovic, Luk H. Vandenberghe, Jeffrey Holt, Gwenaelle Geleoc
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Patent number: 12100575Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.Type: GrantFiled: July 9, 2018Date of Patent: September 24, 2024Assignee: Lam Research CorporationInventors: Daniel A. Brown, Michael C. Kellogg, Leonard J. Sharpless, Allan K. Ronne, James E. Tappan
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Patent number: 12094701Abstract: Disclosed herein are specimen imaging systems, comprising: a sample stage in a vacuum environment, the sample stage configured to support a specimen; an electron beam generator configured to focus an electron beam on a first predetermined location on the specimen; a nanospray dispenser configured to dispense a nanospray onto a second predetermined location on the specimen; a mass spectrometer; and an extraction conduit configured to extract a plume of charged particles generated as a result of contact between the nanospray and the specimen and deliver the charged particles to the mass spectrometer. The system can create a topological and chemical map of the specimen by analyzing at least a portion of the specimen with a mass spectrometer to determine a chemical composition of the specimen at the second predetermined location and analyzing at least a portion of the specimen with the electron beam to determine a surface topology.Type: GrantFiled: October 2, 2020Date of Patent: September 17, 2024Assignee: Georgia Tech Research CorporationInventors: Andrei G. Fedorov, Peter Arthur Kottke
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Patent number: 12090294Abstract: The present disclosure provides methods for administering formulations to the suprachoroidal space of the eye to achieve targeted drug delivery to a desired site of action within the eye. The methods include using a pushing formulation that includes a material such as a gel that expands due to physiochemical cues; or using an electric field to affect the movement of a formulation within the suprachoroidal space; or a combination of a pushing formulation with an electric field.Type: GrantFiled: May 2, 2018Date of Patent: September 17, 2024Assignee: GEORGIA TECH RESEARCH CORPORATIONInventors: Jae Hwan Jung, Mark R. Prausnitz
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Patent number: 12089547Abstract: The present invention relates to isolated strains of Epichloƫ endophytes that form stable symbiotic associations with cereal grasses, particularly wheat, wherein the symbiotic associations are combinations of endophytes and host plants that are not found in nature The invention also relates to methods of identifying and/or selecting fungal endophytes that form stable symbiotic associations with wheat plants including methods of screening for fungal endophytes that form stable symbiotic associations with wheat plants, and to methods of screening for wheat plants that form stable symbiotic associations with fungal endophytes.Type: GrantFiled: February 15, 2023Date of Patent: September 17, 2024Assignees: Grasslanz Technology Limited, National University Corporation Tottori University, The Grains Research and Development CorporationInventors: Wayne Roydon Simpson, Richard David Johnson, Hisashi Tsujimoto
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Patent number: 12094711Abstract: Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.Type: GrantFiled: February 10, 2022Date of Patent: September 17, 2024Assignee: Lam Research CorporationInventors: Jengyi Yu, Samantha S. H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Patent number: 12095345Abstract: A cooling system for an electric motor that includes a stator having a plurality of slot windings and a rotor, coaxial with the stator, having a plurality of magnets, includes a coolant inlet to the motor and a coolant outlet from the motor. A coolant pathway is in fluid communication with the inlet and the outlet. Heat is transferable from the slot windings to the coolant pathway. A coolant flows through the coolant pathway and is in a liquid phase as it enters the coolant inlet, changing into a gaseous phase as heat is transferred to the coolant from the slot windings. A cooling loop is in fluid communication with the coolant inlet and the coolant outlet. The cooling loop cools the coolant so that substantially all of the coolant is in the liquid phase when it enters the coolant inlet.Type: GrantFiled: December 20, 2021Date of Patent: September 17, 2024Assignee: Georgia Tech Research CorporationInventors: Yogendra K. Joshi, Wenming Li
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Patent number: 12094739Abstract: A method for cleaning a load lock in a substrate processing system includes, in a first period, opening a first valve in fluid communication with a gas source to supply gas through a first vent into a gas volume of the load lock. The gas is supplied at a pressure and flow rate sufficient to disturb particles from surfaces of the load lock. The method includes, in a second period subsequent to the first period and with the first valve opened, opening a second valve in fluid communication with a pump and turning on the pump to flush the gas and particles from the gas volume of the load lock, and, in a third period subsequent to the second period, closing the first valve while continuing to pump the gas and the particles from the gas volume of the load lock via the second valve.Type: GrantFiled: October 5, 2020Date of Patent: September 17, 2024Assignee: Lam Research CorporationInventors: Adam Patrick Bateman, Travis R. Taylor
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Publication number: 20240301120Abstract: A composition for forming polyurethane foam including a polyol mixture containing two or more polyols having different melting points, an isocyanate compound, and a blowing agent, wherein the two or more polyols are respectively included in the same weight ratio. A foam for a vehicle seat including a polyurethane foam manufactured from the composition for forming polyurethane foam described above. A method of manufacturing a foam for a vehicle seat including manufacturing a polyurethane foam from the composition for forming polyurethane foam described above, and coating a coating layer composition containing 1 to 5 wt % of carbon nanotubes on at least one surface of the polyurethane foam. A vehicle seat including the foam for a vehicle seat described above.Type: ApplicationFiled: August 8, 2023Publication date: September 12, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Kwon Yong CHOI, Jong Hwan SUHR, Jin Woo LEE, Bo Gyeong JIN, Kyeong Hoon KANG
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Patent number: 12087572Abstract: Disclosed are methods for the formation of silicon nitride (SiN) on only the horizontal surfaces of structures such as 3D NAND staircase. This allows for thicker landing pads for subsequently formed vias. In some embodiments, the methods involve deposition of a SiN layer over a staircase followed by a treatment to selectively densify the SiN layer on the horizontal surfaces with respect to the sidewall surfaces. A wet etch is then performed to remove SiN from the sidewall surfaces. The selective treatment results in significantly different wet etch rates (WERs) between the horizontal surfaces and the sidewalls.Type: GrantFiled: March 26, 2020Date of Patent: September 10, 2024Assignee: Lam Research CorporationInventors: Bart J. van Schravendijk, Soumana Hamma, Kai-Lin Ou, Ming Li, Malay Milan Samantaray
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Patent number: 12084418Abstract: The disclosure relates to novel compounds and methods of use of the compounds to maintain the G?i2 protein in its inactive GDP-bound state. The disclosure describes the knockdown or inhibition of G?i2 negatively regulated migration of breast and ovarian cancer cell lines. The novel compounds inhibit the migratory behavior of PC3, DU145 and E006AA prostate cancer cell lines. Specifically, the novel compounds block the activation of G?i2 in oxytocin-stimulated prostate cancer PC3 cells and inhibits the migratory capability of DU145 cells overexpressing constitutively active form of G?i2, under basal and EGF-stimulated conditions.Type: GrantFiled: December 20, 2021Date of Patent: September 10, 2024Assignees: CLARK ATLANTA UNIVERSITY, INC., GEORGIA TECH RESEARCH CORPORATIONInventors: Shafiq A. Khan, Silvia Caggia, Adegboyega K. Oyelere, Subhasish Tapadar
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Patent number: 12087561Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.Type: GrantFiled: June 6, 2023Date of Patent: September 10, 2024Assignee: Lam Research CorporationInventors: John Stephen Drewery, Tom A. Kamp, Haoquan Yan, John Edward Daugherty, Ali Sucipto Tan, Ming-Kuei Tseng, Bruce Edmund Freeman
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Patent number: 12087557Abstract: A substrate processing system includes a processing chamber including a dielectric window and a substrate support arranged therein to support a substrate. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A Faraday shield is arranged between the coil and the dielectric window. An RF generator is configured to supply RF power to the coil. The coil is coupled by stray capacitance and/or directly coupled to the Faraday shield. A capacitor is connected to one of the coil and the Faraday shield to adjust a position of a voltage standing wave along the coil.Type: GrantFiled: September 10, 2020Date of Patent: September 10, 2024Assignee: LAM RESEARCH CORPORATIONInventors: Shen Peng, Tamarak Pandhumsoporn, Anthony Nguyen, Dan Marohl
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Patent number: 12087573Abstract: Methods and apparatuses are provided herein for oxidizing an annular edge region of a substrate. A method may include providing the substrate to a substrate holder in a semiconductor processing chamber, the semiconductor processing chamber having a showerbead positioned above the substrate holder, and simultaneously flowing, while the substrate is supported by the substrate holder, (a) an oxidizing gas around a periphery of the substrate and (b) an inert gas that does not include oxygen through the showerhead and onto the substrate, thereby creating an annular gas region over an annular edge region of the substrate and an interior gas region over on an interior region of the substrate; the simultaneous flowing is not during a deposition of a material onto the substrate, and the annular gas region has an oxidization rate higher than the interior gas region.Type: GrantFiled: July 9, 2020Date of Patent: September 10, 2024Assignee: Lam Research CorporationInventors: Gerald Joseph Brady, Kevin M. McLaughlin, Pratik Sankhe, Bart J. van Schravendijk, Shriram Vasant Bapat
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Patent number: 12087574Abstract: A method for processing a substrate is described. A first reactant in vapor phase is introduced into a reaction chamber having the substrate therein. The first reactant is allowed to be adsorb onto the substrate surface. The non-reactive portion of the first reactant is purged from the reaction chamber after a flow of the first reactant has ceased. The second reactant is introduced in vapor phase into the reaction chamber while the first reactant is adsorbed onto the substrate surface. The second reactant comprises a 1:1:1 ratio of dihydrogen (H2), a nitro-gen-containing reactant, and an oxygen-containing reactant. A plasma is ignited based on the second reactant. The substrate surface is exposed to the plasma. The plasma is extinguished. Gas from the reaction chamber is purged.Type: GrantFiled: June 27, 2019Date of Patent: September 10, 2024Assignee: Lam Research CorporationInventors: Douglas Walter Agnew, Joseph R. Abel, Bart Jan van Schravendijk
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Patent number: 12080528Abstract: Systems and methods for cleaning a showerhead are described. One of the systems includes a support section and a press plate located above the support section to be supported by the support section. The system further includes a cleaning layer located above the press plate. The cleaning layer moves to clean a showerhead. The support section contacts an arm of a spindle assembly for movement with movement of the arm.Type: GrantFiled: October 20, 2020Date of Patent: September 3, 2024Assignee: Lam Research CorporationInventors: Eric Bramwell Britcher, Gerald Vartanian
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Patent number: 12080592Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.Type: GrantFiled: September 10, 2019Date of Patent: September 3, 2024Assignee: Lam Research CorporationInventors: Hui-Jung Wu, Bart J. van Schravendijk, Mark Naoshi Kawaguchi, Gereng Gunawan, Jay E. Uglow, Nagraj Shankar, Gowri Channa Kamarthy, Kevin M. McLaughlin, Ananda K. Banerji, Jialing Yang, John Hoang, Aaron Lynn Routzahn, Nathan Musselwhite, Meihua Shen, Thorsten Bernd Lill, Hao Chi, Nicholas Dominic Altieri
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Patent number: 12080562Abstract: A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.Type: GrantFiled: September 9, 2020Date of Patent: September 3, 2024Assignee: Lam Research CorporationInventors: Samantha Siamhwa Tan, Tamal Mukherjee, Wenbing Yang, Girish Dixit, Yang Pan