Abstract: A switch for switching a signal between a source client device and a destination client device, the switch includes: a switch module housing unit including a switch module, configured to output a first signal, and a second signal; a shuffle including: a first input, a first output, and a second output, wherein the first input is configured to receive the first signal and the second signal from the switch module, and to direct the first signal to the first output and the second signal to the second output. A switch including a switch module housing unit, including: a first input, a second input, and a first output, wherein the first input is configured to receive a first signal and direct it to the first output, and the second input is configured to receive a second signal and direct it to the first output.

Abstract: A routing protocol, the routing protocol includes the steps of: receiving a packet at an ingress node of a distributed router, the ingress node having an ingress node address, and the packet having a packet header containing a global destination address; converting the global destination address into a local destination address, the local destination address identifying a location on the distributed router; and routing the packet to the local destination address.

Abstract: A discrete wavelength tunable laser capable of switching between a plurality of lasing channels of different wavelengths, the tunable laser comprising: a semiconductor optical amplifier (SOA); a wavelength demultiplexer (Demux), having a Demux input which receives the output from the SOA, and a plurality of Demux outputs, each Demux output defining a different spatial path for a respective lasing channel; each of the respective lasing channels being within the bandwidth of the SOA; a reflector located within each spatial path for reflecting light of the respective lasing channel; and a lasing suppression mechanism located within each lasing channel; wherein one or more desired lasing channels are selected by application of the lasing suppression mechanism in each spatial path other than the one or more spatial paths corresponding to the one or more desired lasing channels.

Abstract: A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.

Abstract: An optical fiber adapter and method of fabricating the same from a wafer including a double silicon-on-insulator layer structure. The optical fiber adapter may include a mode converter, a trench, and a V-groove, the V-groove and the trench operating as passive alignment features for an optical fiber, in the transverse translational and rotational degrees of freedom, and in the longitudinal translational degree of freedom, respectively. The mode converter may include a buried tapered waveguide.

Abstract: A silicon based electro-optically active device and method of producing the same. The silicon based electro-optically active device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active waveguide including an electro-optically active stack within a cavity of the SOI waveguide; and a lined channel between the electro-optically active stack and the SOI waveguide, the lined channel comprising a liner; wherein the lined channel is filled with a filling material with a refractive index similar to that of a material forming a sidewall of the cavity, to thereby form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

Abstract: An arrayed waveguide grating. The arrayed waveguide grating (145) includes two star couplers (130, 150) and an array of waveguides (215, 225) connecting the star couplers. The array of waveguides of the arrayed waveguide grating may have a T-shaped geometry making possible an arrayed waveguide grating with an arbitrarily large free spectral range in a compact form factor. Different materials may be used in the optical paths to reduce the temperature dependence of the characteristics of the arrayed waveguide grating.

Abstract: A faceplate pluggable remote laser source and system incorporating such a laser source. The system may include an enclosure having a faceplate; a first optical connector, in the faceplate; a laser module; and a loopback fiber cable, connected between the laser module and the first optical connector. The faceplate may form an exterior boundary of the enclosure. The laser module may have a first end including an electrical interface, and a second end including an optical interface. The first end of the laser module may be engaged in a receptacle in the faceplate, and the second end of the laser module may extend outside the faceplate. The laser module may be configured to receive electrical power through the electrical interface, and to produce unmodulated light at the optical interface. The loopback fiber cable and the first optical connector may be configured to route the unmodulated light back into the enclosure.

Abstract: A light ranging and detection system achieving reconfigurable very wide field of view, high sampling of spatial points per second with high optical power handling by using architecture to efficiently combine different wavelengths, time and frequency coding, and spatial selectivity. The transmitter is capable of generating multiple narrow beams, encoding different beams and transmitting in different spatial directions. The receiver can differentiate and extract range and reflectivity information of reflected beams. Three dimensional imaging of the environment is achieved by scanning the field of view of the transmitter. Control and signal processing electronic circuitries fabricated in a chip are packaged together with a chip containing the photonic components of the ranging system.

Abstract: An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

Abstract: A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

Abstract: An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.

Abstract: A method of operating an optical modulator. The optical modulator having: a rib waveguide which includes a junction which is either a PIN or PN junction, the junction having a breakdown voltage. The method comprising: applying a reverse bias to the junction, so as to operate the optical modulator around the breakdown voltage of the junction; operating the modulator in an avalanche multiplication and/or band-to-band tunnelling mode by increasing the reverse bias past the breakdown voltage.

Abstract: An optoelectronic device and a method of manufacturing the same. The device comprising: a multi-layered optically active stack; an input waveguide, arranged to guide light into the stack; an output waveguide, arranged to guide light out of the stack; and anti-reflective coatings, located between both the input waveguide and the stack and the stack and the output waveguide; wherein the input waveguide and output waveguide are formed of silicon nitride.

Abstract: An optoelectronic switch for switching data from a source external client device to a destination external client device, the optoelectronic switch includes: an array of client-side transceivers, each having an array of client-facing optical ports to connect to an external client device, and an array of leaf-facing electrical ports; an array of leaf switches, each including an array of client-side electrical ports and an array of fabric-side electrical ports; a first electrical interconnecting region providing electrical connections between the leaf-facing electrical ports of the client-side transceivers and the client-side electrical ports of the leaf switches, an array of fabric-side transceivers, each having an array of leaf-facing electrical ports, and an array of fabric-facing optical ports; a second electrical interconnecting region providing electrical connections between the fabric-side electrical ports of the leaf switches and the leaf-facing electrical ports of the fabric-side transceivers; an array

Abstract: An optical device. In some embodiments, the optical device includes a first interface; a second interface; a first plurality of waveguides, at the first interface; a second plurality of waveguides, at the second interface; and a free propagation region. A first waveguide of the first plurality of waveguides has a width at least 20% greater than a second waveguide of the first plurality of waveguides.

Abstract: A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region.

Abstract: A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.

Abstract: An electro-optical package. In some embodiments, the electro-optical package includes a first electro-optical chip coupled to an array of optical fibers, and a first physical medium dependent integrated circuit coupled to the first electro-optical chip.

Abstract: A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 ?m to 13 ?m.