Abstract: A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

Abstract: A waveguide device and method of doping a waveguide device, the waveguide device comprising a rib waveguide region, the rib waveguide region having: a base, and a ridge extending from the base, wherein: the base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; a first doped slab region extends along the first slab region; a second doped slab region extends along the second slab region; a first doped sidewall region extends along a first sidewall of the ridge and along a portion of the first slab, the first doped sidewall region being in contact with the first doped slab region at a first slab interface; and a second doped sidewall region extends along a second sidewall of the ridge and along a portion of the second slab, the second doped sidewall region being in contact with the second doped slab region at a second slab interface; and wherein the separation between the first sidewall of the ridge and the first slab interface is no more than 10 ?

Abstract: A silicon based electro-optically active device and method of production thereof. The device comprising: a silicon-on-insulator (SOI) layer; an electro-optically active stack, disposed on top of the SOI layer: a first epitaxially grown structure comprising a first passive waveguide and a second epitaxially grown structure comprising a second passive waveguide, the first and second passive waveguides being disposed adjacent to respective sides of the electro-optically active stack, wherein the first and second passive waveguides are configured to edge couple light from the first passive waveguide into the electro-optically active stack and from the electro-optically active stack into the second passive waveguide; and an evanescent coupling structure, for evanescently coupling light between the SOI layer and the first and second passive waveguides.

Abstract: A system for sharing a data handling resource among a plurality of data producers. In some embodiments, the system includes: a data-handling resource, a first data generator, a first data connection, from the first data generator to the data-handling resource, a second data generator, a second data connection, from the second data generator to the first data generator, and a token-forwarding connection between the first data generator and the second data generator. The token-forwarding connection may be configured to transfer a token between the first data generator and the second data generator. The first data generator may be configured: to generate a first data stream, to receive a second data stream from the second data generator through the second data connection, and to send data selected from the first data stream and the second data stream.

Abstract: A light ranging and detection system achieving reconfigurable very wide field of view, high sampling of spatial points per second with high optical power handling by using architecture to efficiently combine different wavelengths, time and frequency coding, and spatial selectivity. The transmitter is capable of generating multiple narrow beams, encoding different beams and transmitting in different spatial directions. The receiver can differentiate and extract range and reflectivity information of reflected beams. Three dimensional imaging of the environment is achieved by scanning the field of view of the transmitter. Control and signal processing electronic circuitries fabricated in a chip are packaged together with a chip containing the photonic components of the ranging system. The light ranging and detection system generates a THz beam in addition to an optical beam, and both beams combined allow reconfigurable spectroscopy.

Abstract: An assembly. In some embodiments, the assembly includes: a photonic integrated circuit; and an electronic integrated circuit. A front surface of the photonic integrated circuit abuts, in an area of overlap, against a front surface of the electronic integrated circuit. A first portion of the photonic integrated circuit overhangs a first edge of the electronic integrated circuit, and a first portion of the electronic integrated circuit overhangs a first edge of the photonic integrated circuit. A conductor on the front surface of the electronic integrated circuit is connected, in the area of overlap, to a conductor on the front surface of the photonic integrated circuit.

Abstract: A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.

Abstract: An arrayed waveguide grating. The arrayed waveguide grating includes two star couplers and an array of waveguides connecting the star couplers. The T-shaped geometry of the array of waveguides makes possible an AWG with an arbitrarily large free spectral range in a compact form factor. An array mode converter produces a field pattern, at an aperture of a free propagation region of a star coupler, having overlapping modes from adjacent waveguides.

Abstract: An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

Abstract: A polarization rotator and a polarization stabilizer. The polarization rotator includes a rib waveguide. The rib waveguide including: a slab portion; and a ridge portion, which is disposed along a surface of the slab portion. The slab portion has a first slab region whose width, as measured in a direction perpendicular to a guiding direction of the waveguide, increases from a first slab width to a second slab width along a first length, and the ridge portion has a first ridge region whose width, as measured in the same direction as the slab widths, decreases from a first ridge width to a second ridge width along the same first length; such that the rotator is configured to rotate the polarization of light during its transmission through the rib waveguide.

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

Abstract: An electro-optical package. In some embodiments, the electro-optical package includes a first electro-optical chip coupled to an array of optical fibers, and a first physical medium dependent integrated circuit coupled to the first electro-optical chip.

Abstract: Various leaf switch modules including optical network interfaces, electrical network interfaces and packet processors are provided. Some of the leaf switch modules as described herein are adapted for upward transmission of signals from external client devices to an electrical fabric, and include O/E converters; other leaf switch modules are adapted for downward transmission of signals from an electrical fabric to external client devices, and include E/O converters. A third type of leaf switch as described herein is adapted for both upward and downward transmission of signals, and includes both types of converter. In addition to the leaf switch modules themselves, an optoelectronic switch containing a plurality of those leaf switches is also described.

Abstract: A system and method for packing optical and electronic components. A module includes an electronic integrated circuit and a plurality of photonic integrated circuits, connected to the electronic integrated circuit by wire bonds or by wire bonds and other conductors. A metal cover of the module is in thermal contact with the electronic integrated circuit and facilitates extraction of heat from the electronic integrated circuit. Arrays of optical fibers are connected to the photonic integrated circuits.

Abstract: An electro-optical package. In some embodiments, the package includes an electronic integrated circuit module, a first electro-optical component, and a photonic integrated circuit. The first electro-optical component may be in a top surface of the photonic integrated circuit. The electronic integrated circuit module may have a top surface facing toward and overlapping both a portion of the first electro-optical component, and a portion of the photonic integrated circuit.

Abstract: A single mode waveguide with a straight portion and a curved portion, the curved portion having the shape of an adiabatic bend. The single mode waveguide has a curved portion that is shaped according to an adiabatic bend, with a curvature that varies continuously, and that vanishes at a point at which the curved portion is contiguous with a straight portion of the waveguide. The absence of curvature discontinuities avoids the coupling, within the waveguide, of optical power from a fundamental mode into a higher order mode and the curvature of the curved portion results in attenuation of optical power, in higher order modes, that may be coupled into the waveguide at either end.

Abstract: An optoelectronic device comprising: a silicon-on-insulator (SOI) substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; a waveguide region, where a portion of the silicon device layer and a portion of the BOX layer underneath the portion of the device layer have been removed, the portion of the BOX layer having been replaced with a layer of silicon and a layer of crystalline oxide on top of the silicon; and a waveguide structure located directly on top of the crystalline oxide layer, the waveguide structure including a P doped region, and an N doped region with an intrinsic region in-between, creating a PIN junction across which a bias can be applied to create a modulation region.

Abstract: A silicon based electro-optically active device and method of producing the same, the device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active stack within a cavity of the SOI waveguide, wherein the electro-optically active stack is separated from an insulator layer of the electro-optically active device by a seed layer; and a channel between the electro-optically active stack and the SOI waveguide; wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.