Abstract: An input signal having a high level or a low level is input to a pad. A first protection element includes a first transistor configured as an N-channel MOSFET designed so as to withstand ESD. A second protection element includes a second transistor configured as a P-channel MOSFET designed so as to withstand ESD. A capacitance element is connected to a second line, and forms an RC filter together with a filter resistor. The capacitance element includes at least one from among a third transistor having the same device structure as that of the first transistor and a fourth transistor having the same device structure as that of the second transistor.

Abstract: A semiconductor device includes: a first conductive type semiconductor device; a first conductive type drift region formed by epitaxial growth on the semiconductor substrate; a plurality of first conductive type vertical implantation regions formed by multistage ion implantation in the drift region, the vertical implantation regions having a prescribed vertical implantation width and a prescribed drift region width; an anode electrode disposed on the front surface of the drift region opposite to the semiconductor substrate, the anode electrode being in Schottky contact with the drift region and in ohmic contact with the first conductive type vertical implantation regions; and a cathode electrode disposed on the rear surface of the semiconductor substrate opposite to the drift region, the cathode electrode being in ohmic contact with the semiconductor substrate.

Abstract: [Problem] There is demand for chip resistors that are compact and that have high resistivity. [Solution] A chip resistor (100) has a substrate (11), a first connection electrode (12) and a second connection electrode (13) that are formed on the substrate (11), and a resistor network that is formed on the substrate (11) and that has ends one of which is connected to the first connection electrode (12) and the other one of which is connected to the second connection electrode (13). The resistor network is provided with a resistive circuit. The resistive circuit has a resistive element film line (103) that is provided along inner wall surfaces of trenches (101). The resistive element film line (103) extending along the inner wall surfaces of the trenches (101) is long and has a high resistivity as a unit resistive element. [Effect] The resistivity of the chip resistor (100) as a whole can be increased.

Abstract: A microchip having a fluid circuit therein for passing a liquid is provided, wherein the fluid circuit has a first reservoir and a second reservoir for storing at least a part of the liquid, a first path connecting the first reservoir and the second reservoir, and a second path connecting the first reservoir and the second reservoir at a position different from the first path, and the first reservoir, the second reservoir, the first path, and the second path constitute a circular path capable of circulating the liquid.

Abstract: A MEMS mirror device includes a semiconductor substrate, a mirror provided on the semiconductor substrate, a first cavity, a second cavity, and a frame portion to define the first cavity and the second cavity. The semiconductor substrate further includes a swing portion formed just above the first cavity to support the mirror, a straight beam provided just above the first cavity to extend between the frame portion and the swing portion, a comb-teeth-like fixed electrode, and a comb-teeth-like movable electrode, the movable electrode meshing with the fixed electrode with a gap left therebetween, the swing portion configured to swing about the beam as a swing axis in response to movement of the movable electrode.

Abstract: The present invention provides emulsion copolymers and coating compositions containing the same having improved room temperature and hot block resistance in coatings wherein the copolymers have a broad measured glass transition temperature and are the copolymerization product of a vinyl monomer composition A and a softer vinyl monomer composition B having a Hansch parameter of at least 3.2, and containing one or more vinyl monomer M, such that each of which vinyl monomer(s) M would when homopolymerized provide a homopolymer having a measured Tg of 20° C. or less, such as, for example, 2-ethylhexyl acrylate. In addition, the present invention provides methods for making the emulsion copolymers by a powerfeed process comprising feeding vinyl monomer composition A into a reactor from a feed vessel while feeding, simultaneously or after a delay, vinyl monomer composition B into the feed vessel while polymerizing the monomers in the reactor.

Abstract: The present invention relates to a composition comprising a hydrophobically modified alkylene oxide polyurethane characterized by having a Mw of from 50,000 to about 150,000 Daltons and a polydispersity of 2.5 to about 5.0. The present invention further relates to a multi-step process for the preparation of the hydrophobically modified polymer.

Abstract: The present invention relates to the use of an antioxidant treated promoted strong acid ion exchange resin as an acid catalyst.

Abstract: A coating containing pigment particles and a polymer matrix is provided. The coating contains pigment particles that have a scattering coefficient with a linear or quasi-linear relationship to the pigment volume concentration of those pigment particles. The coating has improved hiding and is useful as a protective coating or an aesthetic coating on an underlying substrate. Also provided are compositions useful for preparing the coating, including covalently bonded composite particles and aqueous dispersions containing composite particles. The composite particles each contain a pigment particle with a plurality of polymer particles attached by adsorption on the outer surface of the pigment particle or by covalent bonding to the pigment particle through a coupling agent. Methods to prepare the composite particles and coating compositions containing the composite particles are also provided.

Abstract: A method of preparing a monomer comprises reacting a sultone of the formula (I): wherein each R is independently F, C1-10 alkyl, fluoro-substituted C1-10 alkyl, C1-10 cycloalkyl, or fluoro-substituted C1-10 cycloalkyl, provided that at least one R is F; n is an integer of from 0 to 10, and m is an integer of 1 to 4+2n, with a nucleophile having a polymerizable group. Monomers, including a photoacid-generating monomer, may be prepared by this method.

Abstract: The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized.

Abstract: The present invention relates to a composition which comprises a stable aqueous dispersion of discrete polymer particles and a water-soluble dispersant adsorbed onto the surfaces of pigment particles, wherein the polymer particles comprise structural units of a sulfonic acid monomer or a salt thereof. The present invention addresses a need in the art by providing a way to improve the hiding efficiency of compositions containing pigment such as TiO2 and associative rheology modifiers.

Abstract: A switch control circuit that includes a control unit configured to generate a control signal; a switch driving unit configured to drive a switch element based on the control signal; and a slew rate adjusting unit configured to control the switch driving unit to change a slew rate of the switch element periodically in a predetermined change pattern.

Abstract: A first oscillator is configured to be switchable between a disabled state and an oscillation state in which a first clock signal CLK1 having a first frequency is generated. A second oscillator oscillates at a second frequency that is lower than the first frequency, so as to generate a second clock signal. In (i) a power transfer phase in which electric power is transmitted to a wireless power receiving apparatus, a controller instructs the first oscillator to oscillate, and generates a first pulse signal for controlling a driver according to the first clock signal. In (ii) a selection phase in which the presence or absence of the wireless power receiving apparatus is detected, the controller generates a second pulse signal for controlling the driver at a predetermined time interval, which is measured based on the second clock signal, and during which the first oscillator is set to the disabled state.

Abstract: A synergistic microbicidal composition containing a phenolic compound selected from the class consisting of chlorinated phenols, monosubstituted phenols, fused bicyclic phenols, isopropyl methyl catechols, and monosubstituted catechols and an antimicrobial alcohol selected from the class of menthadiene alcohols and other antimicrobial alcohols.

Abstract: A production method for a semiconductor device having a multi-level interconnection structure including a plurality of interconnection layers stacked one on another on a semiconductor substrate is provided. In the production method, the step of forming each of the interconnection layers of the multi-level interconnection structure includes an interconnection forming step of forming a real interconnection and a dummy interconnection, an insulative film forming step of forming an insulative film covering the real interconnection and the dummy interconnection, and a planarization step of planarizing a surface of the insulative film. The production method includes: a step of computing an in-plane distribution of an overall thickness of the multi-level interconnection structure to be expected when no dummy interconnection is formed; and a step of defining a dummy present zone and a dummy absent zone.

Abstract: A semiconductor device of the present invention includes a semiconductor substrate, stripe-shaped trenches for separating the semiconductor substrate into a plurality of active regions, a buried film having a projecting portion that projects from the semiconductor substrate, buried into the trenches, a source region and drain region of a second conductivity type, which are a pair of regions formed in the active region, for providing a channel region of a first conductivity type for a region therebetween, and a floating gate consisting of a single layer striding across the source region and the drain region, projecting beyond the projecting portion in a manner not overlapping the projecting portion, in which an aspect ratio of the buried film is 2.3 to 3.67.

Abstract: A semiconductor device of the present invention includes a semiconductor layer, a source region and a drain region formed in a surface of the semiconductor layer, both having a first conductivity type, a plurality of gate trenches each formed so as to extend across the source region and the drain region, in a plan view observed in a direction of a normal to the surface of the semiconductor layer, a channel region of a first conductivity type made of the semiconductor layer sandwiched by the gate trenches adjacent to each other, having a channel length along a direction extending from the drain region to the source region, and a gate electrode buried in the gate trench via a gate insulating film, and the channel region has a thickness in the plan view not more than two times a width of a depletion layer to be generated due to a built-in potential between the channel region and the gate electrode.

Abstract: Vibration is suppressed in a feedback type VCM actuator. A converting unit converts a position command value into an internal command value varied based on a waveform having a period which is half of a period of a trigonometric function, the position command value being indicative of a position of a mover and changeable step by step. A driving unit receives a position detection value indicating a current position of the mover from a sensor and drives a voice coil motor such that the position detection value matches the internal command value.

Abstract: The 2D-PC SEL includes: a PC layer; and a lattice point for forming resonant-state arranged in the PC layer, and configured so that a light wave at a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a direction normal to the surface of the PC layer. The lattice point for forming resonant-state has two types of lattice points including a first lattice point and a second lattice point, and the shapes of the adjacent first lattice point and second lattice point are different from each other.