Abstract: The present invention relates to an antimicrobial composition and a method for disinfection involving the antimicrobial composition. It particularly relates to an antimicrobial composition for personal cleaning, oral care or hard surface cleaning applications. It was found that compositions comprising thymol, selected antimicrobial alcohols and a carrier provide synergistic antimicrobial action. In a preferred aspect the composition also comprises 1 to 80%-wt of one or more surfactants.

Abstract: The semiconductor light emitting device includes: a substrate; a first cladding layer disposed on the substrate; an emitting layer disposed on the first cladding layer; a second cladding layer disposed on the emitting layer; a contact layer disposed at a predetermined region on the second cladding layer; an optically transmissive electrode layer disposed on the contact layer; a surface electrode layer disposed on the optically transmissive electrode layer; and an aperture formed by opening a region corresponding to the predetermined region of the surface electrode layer. There is provided a semiconductor light emitting device of which the light extracting efficiency can be improved to achieve high luminance.

Abstract: A current detection circuit for detecting a maximum current value in a three-phase motor includes an identifier configured to identify a maximum current phase having the maximum current value among phases of the motor, and a detector configured to detects the maximum current value by summing current values of phases other than the maximum current phase when the current direction in the maximum current phase is a predetermined first direction.

Abstract: An electrical storage device monitoring circuit includes a 3-state buffer configured to switch between a high output state and a low output state based on a flag output delivered from a previous electrical storage device monitoring circuit at a front stage, and also configured to detect a disconnection between the current electrical storage device monitoring circuit and the previous electrical storage device monitoring circuit at the front stage; a detection circuit configured to monitor an electrical storage device to detect whether the electrical storage device is normal or abnormal; and an output circuit configured to deliver the flag output to a subsequent electrical storage device monitoring circuit at a next stage based on an input of the 3-state buffer and a detection result of the detection circuit.

Abstract: A synergistic microbicidal composition containing a selected from the class consisting of chlorinated phenols, fused bicyclic phenols, monosubstituted phenols and monosubstituted catechols and an antimicrobial alcohol selected from the class consisting of acyclic terpene alcohols.

Abstract: The present invention provides a new process of preparation for PUA with superior mechanical performance, such as elongation, and tensile strength. The process is solvent free, smooth, and robust. PU prepolymer prepared according to the present invention has low viscosity, and contains no particulate DMPA.

Abstract: The present invention relates to an antimicrobial composition and a method for disinfection involving the antimicrobial composition. It particularly relates to an antimicrobial composition for personal cleaning, oral care or hard surface cleaning applications. It was found that compositions comprising one or more isopropyl-methylphenols, terpineol and a carrier provide synergistic antimicrobial action. In a preferred aspect the composition also comprises 1 to 80%-wt of one or more surfactants.

Abstract: A synergistic microbicidal composition containing: (a) at least one microbicide selected from the group consisting of isopropyl methyl phenols and monosubstituted phenols and (b) at least one microbicide selected from the group consisting of p-menthene alcohols, menthadiene alcohols and other antimicrobial alcohols of a specified structure.

Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film.

Abstract: The PD device includes: a DC/DC converter disposed between an input and an output; a primary-side controller configured to control an input current of the DC/DC converter; and a secondary-side controller connected with AC coupling to the output, and configured to feed back electric power information of the output to the primary-side controller. The primary-side controller varies an output voltage value and an available output current capacity of the DC/DC converter by controlling the input current on the basis of the electric power information fed back from the secondary-side controller.

Abstract: A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.

Abstract: A switching transistor is configured such that its on resistance RON is switchable between at least two values RON1 and RON2. When the switching transistor is switched from off to on, a control circuit sets the on resistance of the switching transistor to the first value RON1 for a first period immediately after the switching of the switching transistor. Subsequently, for a second period until the switching transistor is turned off, the control circuit sets the on resistance of the switching transistor to the second value RON2 that is smaller than the first value RON1.

Abstract: There is provided a microchip including a fluid circuit composed of a space formed inside, and causing a liquid present in the fluid circuit to move within the fluid circuit by application of centrifugal force, the microchip including: an opening provided in a surface of the microchip and connected to the fluid circuit; a lid portion for opening and closing the opening; and a specimen take-in portion provided at the lid portion or in the opening, for taking in a specimen.

Abstract: The PD device comprises a primary-side controller configured to control an input current of a DC/DC converter disposed between an input and an output, and a secondary-side controller connected with AC coupling to the output, and configured to feedback electric power information of the output to the primary-side controller. The primary-side controller varies an output voltage value and an available output current capacity of the DC/DC converter by controlling the input current on the basis of the electric power information fed back from the secondary-side controller. The primary-side controller can change an overpower detecting set value in accordance with the target equipments connected to the output, thereby executing the power change of the DC/DC converter.

Abstract: The semiconductor device can prevent damages on a semiconductor chip even when a soldering material is used for bonding the back surface of the semiconductor chip to the junction plane of a chip junction portion such as an island or a die pad. This semiconductor device includes a semiconductor chip and a chip junction portion having a junction plane that is bonded to the back surface of the semiconductor chip with a soldering material. The junction plane is smaller in size than the back surface of the semiconductor chip. This semiconductor device may further include a plurality of extending portions which extend respectively from the periphery of the junction plane to directions parallel with the junction plane.

Abstract: A power supply apparatus comprises: a transformer that includes primary/secondary windings that are electromagnetically connected to each other with polarities opposite to each other, an output switch that activates/inactivates an electric-current route that extends from an application terminal for an input voltage to a ground terminal via the primary winding a rectifying-smoothing portion that generates an output voltage from an induced voltage, a feedback voltage generation portion that monitors a switch voltage appearing at a connection node between the primary winding and the output switch and generates a feedback voltage in accordance with the output voltage, a reference voltage generation portion that generates a reference voltage, a comparator that compares the feedback voltage and the reference voltage with each other to generate a comparison signal, and a switching control portion that generates an output switch control signal by means of an on-time control method in accordance with the comparison si