Abstract: A data holding device includes a loop structure unit configured to hold data using a plurality of logic gates connected in a loop shape, a nonvolatile storage unit including a plurality of ferroelectric elements, the nonvolatile storage unit configured to store the data held in the loop structure unit in a nonvolatile manner using hysteresis characteristics of the ferroelectric elements, and a circuit separation unit configured to electrically separate the loop structure unit and the nonvolatile storage unit. The ferroelectric elements of the nonvolatile storage unit are surrounded by a dummy element smaller in width than the ferroelectric elements.

Abstract: A load driving device disclosed in the specification includes a power supply circuit for supplying to a load an output voltage converted from an input voltage, a detection voltage generation circuit for generating a detection voltage which varies depending on a magnitude of a voltage drop which across the load, and a control circuit for controlling the power supply circuit so that it performs output feedback control of the output voltage, on the basis of the detection voltage.

Abstract: A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the broad spectrum, endpoint detection window block is disposed within the counterbore opening.

Abstract: A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block comprising, comprises an olefin copolymer; wherein the window block exhibits a uniform chemical composition across its thickness; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the window block is disposed within the counterbore opening.

Abstract: A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block comprising a cyclic olefin addition polymer; wherein the window block exhibits a uniform chemical composition across its thickness; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the window block is disposed within the counterbore opening.

Abstract: The photonic-crystal (PC) slab absorber includes: a two-dimensional (2D)-PC slab composed of semiconducting materials; and a lattice point periodically arranged in the 2D-PC slab, the lattice point for forming resonant-state which can capture an electromagnetic waves incident from an outside by resonating an electromagnetic wave in a band edge of a photonic band structure of the 2D-PC slab in the plane of the 2D-PC slab. The 2D-PC slab is doped with impurities and can absorb the captured electromagnetic wave in the band edge resonant frequency of the 2D-PC slab.

Abstract: The present invention provides a hair styling composition comprising (a) 1% to 10% by weight of at least one polymer comprising, as polymerized units, one or more monomers having at least one acid-functional group; (b) 99% to 90% by weight of a solvent mixture comprising: (i) 5% to 100% by weight of at least one volatile organic solvent; (ii) 95% to 0% by weight of water, and (iii) 0% to 80% by weight of at least one propellant; and (c) a neutralizer, wherein the mole ratio of said neutralizer to the acid-functional groups on said polymer (a) is from 0:1 to 1.2:1, and the neutralizer comprises: (i) 10% to 30% neutralization of the acid group of the polymer by tetrabutylammonium hydroxide, and (ii) 90% to 70% neutralization of the acid group of the polymer by aminomethyl propanol. More particularly, the polymer (a) may comprise, as polymerized units, (i) 30% to 75% by weight of one or more monomer that has refractive index of 1.

Abstract: The illumination device disclosed in the present specification has a light source, a touchless sensor for detecting proximity and movement of an object without contact, and a control unit for controlling the driving of the light source on the basis of an output of the touchless sensor.

Abstract: The invention relates to a process for preparation of methacrylic acid, comprising the steps: a) providing a feed composition comprising a main compound selected from isobutylene and tert-butyl alcohol and at least one co-compound selected from the group consisting of methanol, dimethyl ether and formaldehyde; b) subjecting the feed composition provided in step a) with at least a first part of said at least one co-compound to a catalytic reaction zone and obtaining an oxidation phase comprising methyl methacrylate and methacrylic acid.

Abstract: An organic EL device includes a light-transmitting substrate, a light-transmitting first electrode layer arranged on the substrate, three or more light-emitting units layered and arranged on the first electrode layer, each of the light-emitting units including a central organic emission layer, a hole transfer layer and an electron transfer layer, a plurality of charge generation layers, each of the charge generation layers being interposed and arranged between two corresponding adjacent ones of the light-emitting units, and a second electrode layer arranged on the light-emitting unit positioned highest in a layering direction among the light-emitting units. The total thickness of the layers interposed between the first electrode layer and the second electrode layer being 360 nm or less.

Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.

Abstract: An absolute-value circuit outputs the absolute value of a signal SIN? that corresponds to an input signal SIN. A clipping circuit clips the signal SIN? that corresponds to the input signal, to a positive limit value and to a negative limit value. A first multiplier multiplies the signal SIN? that corresponds to the input signal, by a predetermined coefficient. A first adder subtracts the output signal of the first multiplier from the output signal of the clipping circuit. A second adder sums a signal that corresponds to the output signal of the first adder and a signal that corresponds to the output signal of the absolute-value circuit. A third adder sums the input signal SIN and a signal that corresponds to the output signal of the second adder.

Abstract: A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, wit

Abstract: A DC/DC converter 10 has a high-side transistor QH as a switching element and a low-side transistor QL as a synchronous rectifier element. A first primary electrode D and secondary primary electrode S of the high-side transistor QH are connected to an input voltage VIN and an external terminal T1, respectively. A detection transistor QD is provided in a row with the high-side transistor QH, and the ON voltage of the high-side transistor QH when ON is output as detection voltage VQD from the detection transistor QD. The output detection voltage VQD is added to a feedback voltage VFB1 by an adder CB, and inputted to a comparator CMP1. The ON period of a one-shot pulse PS1 outputted from the comparator CMP1 is regulated so as to be in direct proportion to the sum of the detection voltage VQD and the feedback voltage VFB1.

Abstract: A method for producing an AB block copolymer with PDI is provided. The method comprises steps of: 1) reaction, in the presence of at least one free radical initiator, of a reaction mixture comprising a compound of formula (I), and 2) reaction, at a temperature of 45° C. or above, of a reaction mixture comprising an ethylenically unsaturated monomer B and, independent from that of step 1), a compound of formula (I) and the macroinitiator of step 1) in solvent(s) to obtain the AB block copolymer; wherein the weight ratio of the compound of formula (I) to the macroinitiator in step 2) is at least 1:1000.

Abstract: A resin-sealed semiconductor device includes a semiconductor chip including a silicon substrate; a die pad on which the semiconductor chip is secured via a solder layer; a sealing resin layer sealing the semiconductor chip; and lead terminals connected electrically with the semiconductor chip. One end portion of the lead terminals is covered by the sealing resin layer. The die pad and the lead terminals are formed of copper and a copper alloy, and the die pad is formed with a thickness larger than a thickness of the lead terminals, which is a thickness of 0.25 mm or more.

Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.

Abstract: The terahertz-wave connector includes: a 2D-PC slab; lattice points periodically arranged in the 2D-PC slab, the lattice points for diffracting the THz waves in PBG frequencies of photonic band structure of the 2D-PC slab in order to prohibit existence in a plane of the 2D-PC slab; a 2D-PC waveguide disposed in the 2D-PC slab and formed with a line defect of the lattice points; and an adiabatic mode converter disposed at the edge face of the 2D-PC slab to which the 2D-PC waveguide extended, the 2D-PC waveguide extended to the adiabatic mode converter. There is provided also the THz-wave IC to which such a terahertz-wave connector is applied.

Abstract: A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.

Abstract: [Object] A chip resistor suitable for enhancing manufacturing efficiency is provided. [Means] A chip resistor includes a first electrode 1, a second electrode 2, a resistor portion 3, a first intermediate layer 4 connected to the first electrode 1 and the resistor portion 3, a second intermediate layer 5 connected to the second electrode 2 and the resistor portion 3, a coating film 61 covering the first electrode 1, and oxides existing in the first intermediate layer 4. The coating film 61 is made of a material having a higher absorptance of a laser beam of a predetermined wavelength than that of the material forming the first electrode 1. The oxides are oxides of the material forming the coating film 61.