Abstract: An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring layer stacked on the first transmission layer and constituting a conduction path to the optical functional region. The communication module also includes a second transmission layer transmissive to the light and disposed to cover the optical semiconductor element, and a first resin member stacked on the second transmission layer. The communication module is formed with a fixing hole for fixing an optical fiber. The fixing hole includes a bottom face provided by the second transmission layer, and an opening formed in an outer surface of the first resin member.

Abstract: An organic EL device comprising: an organic EL element; a first transistor that controls a drive current of the organic EL element in accordance with a brightness adjustment voltage; and a temperature correction circuit that corrects the brightness adjustment voltage in accordance with a temperature; wherein the temperature correction circuit includes: a second transistor that has a same temperature characteristic as the first transistor; a resistor element that is connected to the second transistor; and an operational amplifier that controls the second transistor such that a predetermined reference voltage and a voltage across the resistor element become equal to each other; wherein the temperature correction circuit corrects the brightness adjustment voltage in accordance with an output from the operational amplifier.

Abstract: A power supply unit, which is mounted in a host device for supplying power to a client device through a cable interposed therebetween, includes an output unit configured to generate a first output voltage from an input voltage. A controller is provided in the power supply to perform voltage feedback control on the output unit such that the first output voltage is maintained at a predetermined target value. Also, the power supply unit includes a first correction unit configured to correct the voltage feedback control at the controller such that the first output voltage is increased as a second output voltage finally supplied to the client device becomes lower, and a second correction unit configured to correct the voltage feedback control at the controller such that the first output voltage is increased as an output current supplied from the host device to the client device becomes larger.

Abstract: New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful for ion implant lithography protocols.

Abstract: The invention relates to a controlled polymerization process for preparing (meth)acrylate-based AB diblock copolymers with a B block which has a narrow monomodal molecular weight distribution, and an A block which has a broad monomodal molecular weight distribution, and to the use thereof, for example, as a binder in adhesives or sealants.

Abstract: A curable composition, useful as a thermosetting binder, having an emulsion (co)polymer, a polyol, and a water soluble polyacid or salt thereof.

Abstract: Provided is a semiconductor device having a high switching speed. A semiconductor device is provided with an n-type epitaxial layer having a plurality of trenches arranged at prescribed intervals; an embedded electrode formed on an inner surface of the trench through a silicon oxide film to embed each trench; and a metal layer, which is capacitively coupled with the embedded electrode by being arranged above the embedded electrode through a silicon oxide film. In the semiconductor device, a region between the adjacent trenches operates as a channel (current path). A current flowing in the channel is interrupted by covering the region with a depletion layer formed at the periphery of the trenches, and the current is permitted to flow through the channel by eliminating the depletion layer at the periphery of the trenches.

Abstract: An imaging apparatus includes an imaging device, a lens provided in a front part and configured to form an image of a subject on the imaging device, a dot matrix display unit which includes a plurality of LED chips, each providing a plurality of dots, and is arranged in the front part, with a light emission state visible by the subject, and a display controller which controls display of the dot matrix display unit. The dot matrix display unit displays a pattern based on the control of the display controller.

Abstract: The disclosed water purifier comprises an outer wall, a RAW water inflow section that allows inflow of RAW water from outside said outer wall, a purifying section, an ultraviolet ray sterilizing section that has an ultraviolet ray source, a purified water outflow section that allows purified water that has been purified in said purifying section and sterilized in said ultraviolet ray sterilizing section to flow to the outside of said outer wall, a condition-detecting unit, and a control unit that controls generation of ultraviolet rays from said ultraviolet ray source according to the detection by said condition-detecting unit.

Abstract: The present invention provides one component aqueous compositions comprising (i) from 0.01 to 7 wt. %, based on the total weight of solids in the composition, of anion exchange resin beads having a weight average particle size of from 0.1 to 20 ?m a low crosslinker content, the anion exchange resin copolymer beads being chosen from gelular beads, beads having a dual morphology, and mixtures thereof, (ii) an emulsion copolymer having a copolymerization residue of one or more phosphorus acid monomer, and having an anionic surfactant or its polymerization residue and a reductant or its polymerization residue and, (iii) at least one phosphorous containing surfactant in the amount of from 0.1 to 5 wt. %, based on the weight of emulsion copolymer solids. The compositions find use as coating binders and either pigmented or unpigmented paints and enable the provision of a single coat primer plus topcoat with excellent stain blocking.

Abstract: A method for styling hair comprising the steps of placing said hair in a desired configuration and applying a composition to said hair, said composition comprising (a) one or more fully soluble polymer, (b) solvent-propellant mixture or solvent mixture, and optional other ingredients. Also provided is a method of making polymer.

Abstract: A magnetic sensor includes a magneto-electric transducer, a switch circuit, an amplifier circuit, a subtractor circuit, and a selector circuit. The subtractor circuit performs a first subtraction process of generating a first subtraction voltage by subtracting an amplification voltage obtained under an immediately prior first bias state from an amplification voltage obtained under a second bias state and a second subtraction process of generating a second subtraction voltage by subtracting an amplification voltage obtained under an immediately prior second bias state from an amplification voltage obtained under a first bias state in a serial and parallel manner. The selector circuit alternately selects the first subtraction voltage and the second subtraction voltage to output a select voltage.

Abstract: There is provided a lens control device that feeds a motor current to a lens drive motor which drives lens according to the motor current, the lens control device including: a servo computation portion that calculates a motor current setting value such that a deviation of the position of the lens from a target position to which a correction offset has been added is reduced; a motor driver that generates the motor current according to the motor current setting value; and a calibration computation portion that adjusts the correction offset such that an average value of the motor current approaches zero.

Abstract: The present invention provides a light emitting diode (LED) driving device as a semiconductor device, which comprises: a direct current/direct current (DC/DC) controller, for controlling an output segment that is used to generate an output voltage from an input voltage and supply the output voltage to an LED; an output current driver, for generating an output current of the LED; and an LED short-circuit detection circuit, for monitoring a cathode voltage of the LED to perform an LED short-circuit detection, wherein the LED short-circuit detection circuit controls whether an action is performed or not according to a short-circuit detection enable signal input from outside the LED driving device.

Abstract: A power generation apparatus includes a dielectric, a movable member being opposed to the dielectric with a predetermined distance, and an electret and an opposing electrode that are formed on the surface of the movable member facing the dielectric so as to generate a fringe electric field penetrating the dielectric between the two electrodes. When the volume occupancy of the dielectric between the electret and the opposing electrode varies in accordance with a displacement of the movable member, the power generation apparatus outputs the electric charge induced in the opposing electrode as electric current.

Abstract: Provided is a semiconductor device which includes a bonding wire, one end of which is connected to a bipolar device, the other end of which is connected to a conductive member, and the center of which is connected to a unipolar device, said semiconductor device being capable of improving the reliability of wire bonding. A package (4) includes a die pad (61), a source lead (63), a first MOSFET (11), and a first Schottky barrier diode (21). A source electrode (11S) of the first MOSFET (11), an anode electrode (21A) of the first Schottky barrier diode (21), and the source lead (63) are electrically connected by the bonding wire (31), one end of which is bonded to the source electrode (11S) of the first MOSFET (11), the other end of which is bonded to the source lead (63), and the center of which is bonded to the anode electrode (21A) of the first Schottky barrier diode (21).

Abstract: A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.

Abstract: Provided is a semiconductor device in which on-resistance is largely reduced. In a region (2a) of an N type epitaxial layer (2) of the semiconductor device 20, each region between neighboring trenches (3) is blocked with a depletion layer (14) formed around a trench (3) so that a current passage (12) is interrupted, while a part of the depletion layer (14) formed around the trench (3) is deleted so that the current passage (12) is opened. In a region (2b), a junction portion (8) between the N type epitaxial layer (2) and a P+ type diffusion region (7) makes a Zener diode (8).

Abstract: An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost surface that forms a light receiving surface for infrared rays, and a cavity formed to a shape dug in from a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolates the pyroelectric element from the semiconductor substrate.

Abstract: A process for production of a borohydride compound M(BH4)y. The process has three steps. The first step combines a compound of formula (R1O)yM with aluminum, hydrogen and a metallic catalyst containing at least one metal selected from the group consisting of titanium, zirconium, hafnium, niobium, vanadium, tantalum and iron to produce a compound of formula M(AlH3OR1)y, wherein R1 is phenyl or phenyl substituted by at least one alkyl or alkoxy group; M is an alkali metal, Be or Mg; and y is one or two; wherein the catalyst is present at a level of at least 200 ppm based on weight of aluminum. The second step combines the compound of formula M(AlH3OR1)y with a borate, boroxine or borazine compound to produce M(BH4)y and a byproduct mixture containing alkali metal and aluminum aryloxides. The third step separates M(BH4)y from the byproduct mixture.