Abstract: A liquid crystal display control circuit includes a current reduction rate setting circuit analyzes original gradations of pixels in an input image signal and sets a current reduction rate; a light emitting element control circuit adjusts a drive current of the light emitting element in response to the current reduction rate; a gradation changing circuit generates a display image signal in which the original gradations are changed to the display gradations; and a liquid crystal panel control circuit sets a transmittance of the liquid crystal panel in response to the display gradations of pixels included in the image display signal.

Abstract: A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic.

Abstract: A verification system of the present invention is provided to perform unidirectional or bidirectional verification between a master apparatus and a slave apparatus comprising the master apparatus having a master memory capable of storing verification key code in a non-volatile manner and the slave apparatus having a slave memory capable of storing verification key code in the non-volatile manner, wherein at least the slave memory is one of the group consisting of non-volatile logic circuit and ferroelectric an memory, both of which use hysteresis characteristics of ferroelectric components.

Abstract: A power-supply device has a first power supply circuit adapted to generate from an input voltage a first output voltage and a second power supply circuit adapted to generate from the first output voltage a second output voltage. The second power supply circuit monitors the first output voltage to check if it is higher than a first threshold voltage, and also monitors the first power-supply circuit to check if it has started operation for generating the first output voltage, so that the second power supply circuit stays on stand-by, even when the first output voltage is higher than the first threshold voltage, until the first power supply circuit starts operation for generating the first output voltage.

Abstract: A semiconductor device according to the present invention includes a semiconductor substrate, a surface electrode provided on a front surface of the semiconductor substrate through an insulating film, a via, passing through the semiconductor substrate from a rear surface thereof up to the front surface to reach the surface electrode, having a wall including a flange portion inwardly projecting on a front surface portion of the semiconductor substrate, a via insulating film formed on the wall of the via, and a through-electrode embedded inside the via insulating film and electrically connected to the surface electrode, while the via insulating film has portions having different thickness compensating for a step between the flange portion and the remaining portion of the wall, to planarize a contact surface with the through-electrode.

Abstract: A thermal printhead includes a substrate, a resistor layer formed on the substrate, an electrode layer formed on the substrate and electrically connected to the resistor layer, and an insulating layer. The electrode layer includes a first electrically conductive portion and a second electrically conductive portion spaced apart from each other. The resistor layer includes a heater portion that bridges the first electrically conductive portion and the second electrically conductive portion as viewed in the thickness direction of the substrate. The insulating layer includes a portion positioned between the electrode layer and the heater portion. This arrangement reduces formation of a eutectic region between the heater portion and the electrode layer.

Abstract: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).

Abstract: A drive circuit of a stepping motor includes a D/A converter, a current controller having a comparing unit, and an abnormality detecting unit. The DAC generates a target voltage indicating a target value for an excitation current determined based on a reference voltage indicating an upper limit value of the excitation current flowing into the stepping motor. The current controller controls the excitation current based on this target voltage. The comparing unit compares a voltage corresponding to the excitation current and the target voltage. The abnormality detecting unit detects an abnormality of the wire between the drive circuit and the stepping motor based on an output signal from the comparing unit and a control signal indicating a polarity of the excitation current.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer made of a wide bandgap semiconductor having a gate trench provided with a sidewall and a bottom wall, a gate insulating film formed on the sidewall and the bottom wall of the gate trench, and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film, while the semiconductor layer includes a first conductivity type source region formed to be exposed on the side of a front surface of the semiconductor layer for partially forming the sidewall of the gate trench, a second conductivity type body region formed on a side of the source region closer to a rear surface of the semiconductor layer to be in contact with the source region for partially forming the sidewall of the gate trench, a first conductivity type drift region formed on a side of the body region closer to the rear surface of the semiconductor layer to be in contact with the body region for forming the bot

Abstract: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (0) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).

Abstract: A variable gain amplifier includes: a first input terminal, a second input terminal and an output terminal; an operational amplifier; a first resistor interposed between the first input terminal and an inverted input terminal of the operational amplifier; second and third resistors interposed between the inverted input terminal and the output terminal; and a fourth variable resistor having a first terminal connected to a node between the second resistor and the third resistor and a second terminal connected to the non-inverted input terminal, wherein the fourth variable resistor includes a resistance pass including a resistor and a switch.

Abstract: Electrochemically deposited indium composites are disclosed. The indium composites include indium metal or an alloy of indium with one or more ceramic materials. The indium composites have high bulk thermal conductivities. Articles containing the indium composites also are disclosed.

Abstract: The present invention relates in general terms to a process for preparing alkyl methacrylates, comprising as steps: providing an acetone cyanohydrin by a process according to one of the preceding claims; contacting the acetone cyanohydrin with an inorganic acid to obtain a methacrylamide; contacting the methacrylamide with an alcohol in the presence of an inorganic acid in a reactor to obtain an alkyl methacrylate; continuously discharging at least a portion of the alkyl methacrylate from the reactor into a distillation column as a vapor stream; the discharge being effected by feeding a discharge stream comprising steam into the reactor, to an apparatus for preparing alkyl methacrylates, to a process for preparing polymers based at least partly on alkyl methacrylates, to the use of the alkyl methacrylates obtainable by the process according to the invention in chemical products, and to chemical products based on alkyl methacrylates obtainable by the process according to the invention.

Abstract: The present invention provides a dissolution test cell having a chamber and slide valve for dispensing pharmaceutical dosage forms, such as tablets, capsules, and powders, into the chamber without having to open the cell and expose the chamber and its contents to the ambient environment. The present invention also facilitates removal of a partially dissolved or non-disintegrating dosage form from the chamber and cell entirely, without exposing the interior of the cell and chamber. Dissolution test apparatus comprising at least one dissolution test cell in accordance with the invention is also provided, as well as methods for its operation to obtain Level A IVIVC dissolution results which accurately correlate with in vivo dissolution results are also provided.

Abstract: A motor driver includes a control portion, for performing variable control on a torque or rotation speed of a motor through a control signal; and an output mode selection circuit, for sending an indication to the control portion when the control signal is abnormal, so that the motor enters an action status corresponding to a selection signal.

Abstract: The present invention provides solid electrolytic condensers with increased heat resistance and decreased ESR, and methods for preparing the same. The solid electrolytic condensers of the present invention comprise a porous sintered body 1 made of a valve action metal, a dielectric layer 2 covering at least a portion of the porous sintered body 1, and a solid electrolytic layer 3 covering at least a portion of the dielectric layer 2, where the solid electrolytic layer 3 is composed of an anion exchange resin.

Abstract: An LED lamp A1 includes an LED unit 1 in the shape of a straight tube with a plurality of LED modules 12 fixed therein, and also includes a pair of bases 2 that receive electric power from outside and are attached to the ends of the LED unit 1 spaced in the longitudinal direction of the LED unit. The LED unit 1 and the bases 2 are rotatable relative to each other about an axis extending in the longitudinal direction. With this arrangement, the direction of light emission can be changed, with the LED lamp attached to a general-use fluorescent lighting fixture.

Abstract: There is provided a composition comprising (a) one or more cyclopropene complex, and (b) 0-10% water by weight based on the weight of said composition, wherein the mole ratio of cyclopropene in said composition to molecular encapsulating agent in said composition is 0.92:1 or higher, or wherein the composition is in the form of a powder and, in a two-dimensional image of a representative sample of said powder, 20% or more of the area of the images of the particles of said cyclopropene complex, based on the area of all the images of all the particles of said cyclopropene complex in said image of said sample, is in the form of particles of said cyclopropene complex that have width dimension of 10 micrometers or larger. Also provided is a process for making a composition comprising cyclopropene complex.

Abstract: A semiconductor device includes a substrate having first main face having rectangular shape, a first electrode provided at the center on first main face of substrate, first electrode is made of conducting material harder than substrate, and a second electrode provided along at least a part of the periphery on first main face so as to surround first electrode, second electrode is integrated with first electrode by the same conducting material as that of the first electrode, and second electrode has a thinner film thickness than that of the first electrode.

Abstract: A switching power supply apparatus includes: an output transistor to generate an output voltage from an input voltage based on an ON/OFF control of the output transistor; a reference voltage generating unit to generate a reference voltage; a ripple injection unit to inject a ripple component into the reference voltage to generate a ripple reference voltage; a comparator to compare a feedback voltage with the ripple reference voltage to generate a comparison signal; and a switching controller to perform the ON/OFF control of the output transistor based on the comparison signal.