Abstract: By examining scrub mark properties (such as position and size) directly, the performance of a wafer probing process may be evaluated. Scrub mark images are captured, image data measured, and detailed information about the process is extracted through analysis. The information may then be used to troubleshoot, improve, and monitor the probing process.

Abstract: A system for capturing, calibrating and concatenating all-surface inspection and metrology data is herein disclosed. Uses of such data are also disclosed.

Abstract: A triangulation system including a laser beam, optics focusing the laser beam on an object, a light detection unit detecting light reflected from the object due to impingement of the beam on the object, and an arrangement for determining, based on the detected light, object feature dimensions. The wavelength of the laser beam may be shorter than of infrared radiation, which allows for a reduced spot size without significant loss of depth of field. So as to reduce aberrations or a sensitivity to aberrations due to the shortened wavelength, the system may include (i) a polarization dependent coating matching the index of refraction of an element of the light detection unit to that of air for a range of angles, (ii) tilted projection optics, (iii) a prism wavefront corrector, and/or (iv) a positioning assembly, which provides for increased precision in positioning the laser diode with respect to a collimator lens.

Abstract: A semiconductor inspection tool comprises an edge top camera for obtaining images of a top edge of a wafer, an edge normal camera for obtaining images of a normal edge of the wafer, and a controller for receiving the images of the top edge of the wafer and the images of the normal edge of the wafer and for analyzing the images of the top edge of the wafer and the images of the normal edge of the wafer for wafer edge defects.

Abstract: A system for generating a camera trigger that causes a camera to capture image data includes a memory for storing a plurality of trigger values. Each trigger value corresponds to a position of a moving stage. The system includes a controller for receiving position information indicative of a current position of the moving stage, generating a current position value based on the position information, comparing the current position value to at least one of the trigger values, and generating a camera trigger if the current position value matches one of the trigger values.

Abstract: An automated defect inspection system has been invented and is used on patterned wafers, whole wafers, broken wafers, partial wafers, sawn wafers such as on film frames, JEDEC trays, Auer boats, die in gel or waffle packs, MCMs, etc., and is specifically intended and designed for second optical wafer inspection for such defects as metalization defects (such as scratches, voids, corrosion, and bridging), diffusion defects, passivation layer defects, scribing defects, glassivation defects, chips and cracks from sawing, solder bump defects, and bond pad area defects.

Abstract: A system and method for evaluating wafer test probe cards under real-world wafer test cell condition integrates wafer test cell components into the probe card inspection and analysis process. Disclosed embodiments may utilize existing and/or modified wafer test cell components such as, a head plate, a test head, a signal delivery system, and a manipulator to emulate wafer test cell dynamics during the probe card inspection and analysis process.

Abstract: Systems and methods according to aspects of the present invention are described. The systems and methods enable charging, soaking, and measuring of capacitors to be conducted quickly. Charging and soaking typically occurs in parallel and certain embodiments facilitate the measuring of capacitor leakage by sequentially disconnecting each capacitor and measuring the time for voltage on the capacitor to reach a predetermined threshold. Further, all capacitors can be disconnected from a charging source simultaneously and voltages can be measured for each capacitor simultaneously. Monitoring can be periodic in nature. Substantial time savings in the calculation device of leakage values and parameters can be attained.

Abstract: By examining scrub mark properties (such as position and size) directly, the performance of a wafer probing process may be evaluated. Scrub mark images are captured, image data measured, and detailed information about the process is extracted through analysis. The information may then be used to troubleshoot, improve, and monitor the probing process.

Abstract: An automated defect inspection system has been invented and is used on patterned wafers, whole wafers, broken wafers, partial wafers, sawn wafers such as on film frames, JEDEC trays, Auer boats, die in gel or waffle packs, MCMs, etc. and is specifically intended and designed for second optical wafer inspection for such defects as metalization defects (such as scratches, voids, corrosion, and bridging), diffusion defects, passivation layer defects, scribing defects, glassivation defects, chips and cracks from sawing, solder bump defects, and bond pad area defects.

Abstract: Light from a single source is divided among several illumination arms, each of which directs light via a multimode fiber bundle from the source to the wafer location. The arms are arranged circumferentially around a common illumination region, so that the region is illuminated from several directions. For each arm, light exiting the fiber bundle enters a turning prism, reflects off the hypotenuse of the prism, and is diverged in one dimension by a negative cylindrical surface on the exiting face of the prism. The beam then reflects off an anamorphic mirror and propagates to the illumination region on the wafer. The beam has an asymmetric footprint, so that it illuminates a nearly circular region of the wafer when viewed at normal incidence. The fiber bundle is at the front focal plane in the meridional dimension. The illumination region is at the rear focal plane in both dimensions.

Abstract: An optical system includes both a microspot broadband spectroscopic ellipsometer and a photoacoustic film thickness measurement system that are supplied laser light by the same laser light source. One of the systems makes a measurement, the result of which is used to adjust a parameter of the other system; e.g. the ellipsometer measures thickness and the photoacoustic system uses the thickness result to measure the speed of sound. In one version, the ellipsometer converts the laser beam to a broad-spectrum beam that provides higher intensity.

Abstract: A wafer holding mechanism for holding a wafer of the type used in the manufacture of semiconductor devices is herein described. The mechanism has a first plate having a number of offsets that define at least one lip that extends radially inward of the offsets. A second plate is positioned adjacent the first plate and generally between the first plate and the lip such that one or more fingers coupled to the second plate oppose the lip that depends from the first plate. When the second plate is moved to a closed position, the at least one lip and the one or more fingers cooperatively grasp an edge of a wafer therebetween. The wafer holding mechanism is coupled to a drive that rotates the wafer before an imaging mechanism for capturing images of the wafer as it rotates.

Abstract: An edge inspection method for detecting defects on a wafer edge normal surface includes acquiring a set of digital images which captures a circumference of the wafer. An edge of the wafer about the circumference is determined. Each digital image is segmented into a plurality of horizontal bands. Adjacent edge clusters about the circumference of the wafer are combined into edge pixel bins. The edge pixel bins are analyzed via edge clusters analysis to identify defects. The edge pixel bins are also analyzed via blob analysis to determine defects.

Abstract: Some aspects of the present invention relate to a wafer inspection method. A plurality of images is acquired about an edge portion of a wafer. Each of the images comprises a pixel array having a first dimension and a second dimension. A composite image of compressed pixel arrays is generated by compressing each of the pixel arrays in the first dimension and concatenating the pixel arrays. The composite image is analyzed to identify a wafer feature, for example using a sinusoidal line fit.

Abstract: A system and method of mitigating the effects of component deflections in a probe card analyzer system may implement three-dimensional comparative optical metrology techniques to model deflection characteristics. An exemplary system and method combine non-bussed electrical planarity measurements with fast optical planarity measurements to produce “effectively loaded” planarity measurements.

Abstract: An edge bead removal measurement method includes determining an edge of a wafer about a circumference of the wafer. A location of a wafer notch on the edge of the wafer is determined. A location of a center of the wafer is determined. A distance from the edge of the wafer to an edge bead removal line about the circumference of the wafer is determined.

Abstract: A system for capturing, calibrating and concatenating all-surface inspection and metrology data is herein disclosed. Uses of such data are also disclosed.

Abstract: Probe mark inspection involves a recipe based on unique image characteristics or combinations of unique image characteristics. Result images are correlated with a reference created to determine which image characteristic or combination of image characteristics provides an improved contrast.

Abstract: Systems and methods according to aspects of the present invention are described. The systems and methods enable charging, soaking, and measuring of capacitors to be conducted quickly. Charging and soaking typically occurs in parallel and certain embodiments facilitate the measuring of capacitor leakage by sequentially disconnecting each capacitor and measuring the time for voltage on the capacitor to reach a predetermined threshold. Further, all capacitors can be disconnected from a charging source simultaneously and voltages can be measured for each capacitor simultaneously. Monitoring can be periodic in nature. Substantial time savings in the calculation device of leakage values and parameters can be attained.