Abstract: A semiconductor wafer measuring device including a wafer mover adapted to move a semiconductor wafer; a measurement head adapted to scan a surface of the semiconductor wafer as the semiconductor wafer is moved by the wafer mover; and a controller. The controller is adapted to control movement of the wafer mover to provide a first scanning segment of a first portion of the surface of the semiconductor wafer without rotating the semiconductor wafer during the first scanning segment, a second scanning segment of a second different portion of the surface of the semiconductor wafer without rotating the semiconductor wafer during the second scanning segment; and rotating the semiconductor wafer between the first and second scanning segments.

Abstract: A system and method for inspection a substrate for various defects is herein disclosed. Polarizing filters are used to improve the contrast of polarization dependent defects such as defocus and exposure defects, while retaining the same sensitivity to polarization independent defects, such as pits, voids, cracks, chips and particles.

Abstract: A stereoscopic three-dimensional optical metrology system and method accurately measure the location of physical features on a test article in a manner that is fast and robust to surface contour discontinuities. Disclosed embodiments may image a test article from two or more perspectives through a substantially transparent fiducial plate bearing a fiducial marking; camera viewing angles and apparent relative distances between a feature on a test article and one or more fiducials may enable accurate calculation of feature position.

Abstract: A system and method allow accurate calculation of probe float through optical free-hanging and electrical planarity measurement techniques. In accordance with an examplary embodiment, probe float may be determined by acquiring a free-hanging planarity measurement, obtaining a first electrical contact planarity measurement, and calculating probe float using results of the acquiring and the obtaining operations.

Abstract: An image acquisition system and method may employ a non-orthogonal optical axis. The optical axis may be established in such a manner as to position a focal plane of an imaging device in a selected orientation relative to the object space. Such selective positioning and orientation of the focal plane allows the integration of two coordinate axes and enables dual-axis scanning of the object space. In some embodiments, the focal plane may extend throughout the entire depth dimension of the object space.

Abstract: A defect inspection system for the semiconductor and microelectronics industry. More particularly, the present invention relates to an automated defect inspection system for wafers or other semiconductor or electronic substrates of any kind or type that are transparent, translucent, opaque or otherwise capable of allowing at least some light to pass through.

Abstract: A triangulation system including a laser beam, optics focusing the laser beam on an object, a light detection unit detecting light reflected from the object due to impingement of the beam on the object, and an arrangement for determining, based on the detected light, object feature dimensions. The wavelength of the laser beam may be shorter than of infrared radiation, which allows for a reduced spot size without significant loss of depth of field. So as to reduce aberrations or a sensitivity to aberrations due to the shortened wavelength, the system may include (i) a polarization dependent coating matching the index of refraction of an element of the light detection unit to that of air for a range of angles, (ii) tilted projection optics, (iii) a prism wavefront corrector, and/or (iv) a positioning assembly, which provides for increased precision in positioning the laser diode with respect to a collimator lens.

Abstract: Some aspects of the present invention relate to a wafer inspection method. A plurality of images is acquired about an edge portion of a wafer. Each of the images comprises a pixel array having a first dimension and a second dimension. A composite image of compressed pixel arrays is generated by compressing each of the pixel arrays in the first dimension and concatenating the pixel arrays. The composite image is analyzed to identify a wafer feature, for example using a sinusoidal line fit.

Abstract: A system for capturing, calibrating and concatenating all-surface inspection and metrology data is herein disclosed. Uses of such data are also disclosed.

Abstract: An inspection tool includes a camera having a gain value and an offset value set to provide a first camera output indicating a first desired average gray value when the camera is illuminated with a precision light source set at a first light level. The inspection tool includes an inspection light source configured to be set at a second light level such that when the inspection light source illuminates a known target, the camera provides a second output indicating a second desired average gray value.

Abstract: A system and method for inspection a substrate for various defects is herein disclosed. Polarizing filters are used to improve the contrast of polarization dependent defects such as defocus and exposure defects, while retaining the same sensitivity to polarization independent defects, such as pits, voids, cracks, chips and particles.

Abstract: A system and method of mitigating the effects of component deflections in a probe card analyzer system may implement three-dimensional comparative optical metrology techniques to model deflection characteristics. An exemplary system and method combine non-bussed electrical planarity measurements with fast optical planarity measurements to produce “effectively loaded” planarity measurements.

Abstract: A method for inspecting objects such as semiconductor wafers. A staging platform and an optical platform are arranged so that the object may be staged and its surface scanned by optical equipment situated on the optical platform. During the scanning process, the surface is illuminated with light of a plurality of wavelengths, each strobed at a predetermined rate so that multiple images may be collected using time and frequency multiplexing. The multiple images are stored in a database for analysis, which includes processing selected ones of the multiple images according to one or more algorithms. The defect-detection algorithms used for each object are determined by referenced to a predetermined or calculated defect detection protocol, then a defect mask is created for each pixel in the images that is suspected to be defective. The defect mask is then compared to threshold parameters to determine which if any of the suspected defects should be reported.

Abstract: An optical system includes both a microspot broadband spectroscopic ellipsometer and a photoacoustic film thickness measurement system that are supplied laser light by the same laser light source. One of the systems makes a measurement, the result of which is used to adjust a parameter of the other system; e.g. the ellipsometer measures thickness and the photoacoustic system uses the thickness result to measure the speed of sound. In one version, the ellipsometer converts the laser beam to a broad-spectrum beam that provides higher intensity.

Abstract: Light from a single source is divided among several illumination arms, each of which directs light via a multimode fiber bundle from the source to the wafer location. The arms are arranged circumferentially around a common illumination region, so that the region is illuminated from several directions. For each arm, light exiting the fiber bundle enters a turning prism, reflects off the hypotenuse of the prism, and is diverged in one dimension by a negative cylindrical surface on the exiting face of the prism. The beam then reflects off an anamorphic mirror and propagates to the illumination region on the wafer. The beam has an asymmetric footprint, so that it illuminates a nearly circular region of the wafer when viewed at normal incidence. The fiber bundle is at the front focal plane in the meridional dimension. The illumination region is at the rear focal plane in both dimensions.

Abstract: A fiber optic darkfield ring light with many angled fiber optic light lines with direct illumination in a very small package. The fiber optic darkfield ring light includes a base with multiple light heads and multiple light covers attached thereto, a main cover, an optional cord grip, and an optional hood. It incorporates multiple fiber optic line arrays positioned at low angle and used in conjunction with a strobe light source.

Abstract: A system and method of mitigating the effects of component deflections in a probe card analyzer system may implement three-dimensional comparative optical metrology techniques to model deflection characteristics. An exemplary system and method combine non-bussed electrical planarity measurements with fast optical planarity measurements to produce “effectively loaded” planarity measurements.

Abstract: An edge inspection method for detecting defects on a wafer edge normal surface includes acquiring a set of digital images which captures a circumference of the wafer. An edge of the wafer about the circumference is determined. Each digital image is segmented into a plurality of horizontal bands. Adjacent edge clusters about the circumference of the wafer are combined into edge pixel bins. The edge pixel bins are analyzed via edge clusters analysis to identify defects. The edge pixel bins are also analyzed via blob analysis to determine defects.

Abstract: A system and method for evaluating wafer test probe cards under real-world wafer test cell condition integrates wafer test cell components into the probe card inspection and analysis process. Disclosed embodiments may utilize existing and/or modified wafer test cell components such as, a head plate, a test head, a signal delivery system, and a manipulator to emulate wafer test cell dynamics during the probe card inspection and analysis process.

Abstract: A system and method of mitigating the effects of component deflections in a probe card analyzer system may implement three-dimensional comparative optical metrology techniques to model deflection characteristics. An exemplary system and method combine non-bussed electrical planarity measurements with fast optical planarity measurements to produce “effectively loaded” planarity measurements.