Abstract: A measurement system for measuring aspects of a wafer combines an apparatus for performing a conductivity measurement, such as a four-point probe system, with apparatus for performing an optical measurement, such as a photoacoustic measurement system. Results are obtained and combined to provide comprehensive data sets describing the characteristics of the thin film substrate therein.

Abstract: A system and method of point matching measured positions to template, or reference, positions for various applications may generally comprise creating force field vectors and moments operative to perturb measured point locations into alignment with template point locations. Progressive reduction of the force radius may produce results that match very well for points that are highly correlated with the template pattern.

Abstract: The invention relates to a method of performing an optical measurement on a sample, such as an ellipticity measurement. The sample is irradiated with a polarized irradiation beam and a return beam is linearly polarized. The irradiation or return beam is modulated with a birefringence modulator, such as a photoelastic modulator, in accordance with a primary modulation signal. The return beam is directed onto a multichannel detector. Typically the detector is a slow detector, such as a CCD, having a response time greater than a period of the primary modulation signal. Detection values are generated simultaneously at each detection element and processed to determine a plurality of measurements. Various measurement techniques are described, including detector signal averaging over gated intervals; a design employing coherent modulation of the gain of an ICCD , and a modulator-coherent flash lamp design.

Abstract: An edge inspection method for detecting defects on a wafer edge normal surface includes acquiring a set of digital images which captures a circumference of the wafer. An edge of the wafer about the circumference is determined. Each digital image is segmented into a plurality of horizontal bands. Adjacent edge clusters about the circumference of the wafer are combined into edge pixel bins. The edge pixel bins are analyzed via edge clusters analysis to identify defects. The edge pixel bins are also analyzed via blob analysis to determine defects.

Abstract: A semiconductor inspection tool comprises an edge top camera for obtaining images of a top edge of a wafer, an edge normal camera for obtaining images of a normal edge of the wafer, and a controller for receiving the images of the top edge of the wafer and the images of the normal edge of the wafer and for analyzing the images of the top edge of the wafer and the images of the normal edge of the wafer for wafer edge defects.

Abstract: A method and apparatus for dynamically focusing an imaging mechanism on a moving target surface having a variable geometry is herein disclosed. Apparatus for focusing an imaging mechanism may include an objective, a prism, or another optical device that forms part of an optical train of an imaging mechanism, a sensor for measuring a distance to the target surface, and a mechanism for modifying the depth of focus of the objective, prism or other optical device. Data from the sensor may be used to create a predictive model of the target surface. Data from the sensor is also used to fit or correlate the generated model to an exemplary target. Data from the correlated model is used to drive the mechanism for modifying the depth of focus of the objective, prism, or other optical device to maintain the surface of the exemplary target in focus.

Abstract: A film frame aligner for automatically aligning a film frame includes a film frame support, a film frame pusher for pushing the film frame, and a film frame location mechanism for locating at least one notch in the film frame.

Abstract: A photoacoustic system with ellipsometer, where the ellipsometer includes a laser light source for generating an incident beam, an element for focusing the incident beam on a sample, a unit for measuring the change in amplitude of the incident beam on reflection and a unit for measuring the phase difference of the incident beam on reflection. The system further includes an element to convert an input narrow spectrum beam generated by the laser light source to a broadband sample measurement beam that is focused onto the sample.

Abstract: A wafer staging platform for a wafer inspection system for inspecting of semiconductors or like substrates and method of handling wafers. The platform and related method is designed to reduce the amount of time needed to exchange wafers on a processing tool. The staging platform can include a vacuum-assisted feature. The method of handling includes simultaneously processing a plurality of wafers, during which the staging platform is employed to temporarily store wafer(s) in close proximity to a next in line station.

Abstract: A fiber optic darkfield ring light with many angled fiber optic light lines with direct illumination in a very small package. The fiber optic darkfield ring light includes a base with multiple light heads and multiple light covers attached thereto, a main cover, an optional cord grip, and an optional hood. It incorporates multiple fiber optic line arrays positioned at low angle and used in conjunction with a strobe light source.

Abstract: A system and method for inspecting structures formed on the surface of an object using ultraviolet (UV) light. The object is placed in position and illuminated with at least one wavelength of UV light, directed at its surface from a UV source. At the moment of illumination, an image is captured by a UV-light sensitive camera positioned at an angle calculated to intercept light diffracted at particular an angle of diffraction associated with the pattern of structures formed on the surface of the object. To avoid having to repeatedly reposition the camera, one (or more in succession) illumination wavelength is selected to direct an intensity peak associated with a particular order of diffraction at the camera location. Ideally, a visible-light sensitive camera is also used to capture images of the surface when illumination with UV light results in the emanation of light in the visible portion of the spectrum.

Abstract: An edge bead removal measurement method includes determining an edge of a wafer about a circumference of the wafer. A location of a wafer notch on the edge of the wafer is determined. A location of a center of the wafer is determined. A distance from the edge of the wafer to an edge bead removal line about the circumference of the wafer is determined.

Abstract: A method and apparatus for dynamically focusing an imaging mechanism on a moving target surface having a variable geometry is herein disclosed. Apparatus for focusing an imaging mechanism may include an objective, a prism, or another optical device that forms part of an optical train of an imaging mechanism, a sensor for measuring a distance to the target surface, and a mechanism for modifying the depth of focus of the objective, prism or other optical device. Data from the sensor may be used to create a predictive model of the target surface. Data from the sensor is also used to fit or correlate the generated model to an exemplary target. Data from the correlated model is used to drive the mechanism for modifying the depth of focus of the objective, prism, or other optical device to maintain the surface of the exemplary target in focus.

Abstract: An optical throughput condenser re-concentrates light thereby causing light which otherwise would be wasted outside of the useful A? product, also known as optical throughput, of an illuminating system to be redirected back into the useful A? product. The optical throughput condenser includes a thin film having an angle gate such that light striking the surface with a range of incident angles such that the angle of incident is less than or equal to the gate angle (?GATE) transmits through the thin film. Light striking the surface with a range of incident angles such that the angle of incident is grater than the gate angle. reflects back from the thin film. An integrating sphere is positioned such that light reflecting back from the thin film is directed towards the integrating sphere so that the light is redirected towards the angle gate.

Abstract: An inspection system, and process for use thereof, for inspecting semiconductors or like substrates. The inspection system includes an inspection device and an auxiliary sensor apart from the inspection device. The auxiliary sensor is used to collect height data and generate a map of a semiconductor or like substrate to aids in focusing the inspection device.

Abstract: A system for inspecting components is provided. The system includes an image data system that generates image data of the component, such as from a position overlooking the top of a bumped wafer. An interferometry inspection system is connected to the image data system and receives the image data, and analyzes the image data to locate interference fringing that is used to determine the surface coordinates of the bump contacts.

Abstract: An apparatus for improving the signal to noise ratio of measurements of the thickness of layers in a thin film stack uses a photoacoustic measurement system that includes a time differentiation system for inducing a delay in pump beam pulses. The time differentiation system uses, among other things, a birefringent element and other elements to control the polarization of pump beam pulses. Use of the apparatus involves applying a time varying voltage to an electro-optic modulator driver and setting a time differentiation step; or, in another embodiment, applying a time varying voltage to an electro-optic modulator to induce a fixed time delay delta-t between a vertically polarized pulse and a horizontally polarized pulse. The high frequency operation of the system provides for improved determinations of film thickness.

Abstract: An optical inspection system and method for inspecting a component on a printed circuit board (PCB) which determines three-dimensional information in a single scan. A first visual light source illuminates the PCB surface and component with a green light while a second visual light source illuminates the PCB and component with a blue light. At least one laser light source simultaneously illuminates the surface of the PCB with a narrow coherent red-light laser beam. The laser light source is mounted off vertical on a movable mount which enables the laser beam to be directed over an area of interest on the surface of the PCB. The system also includes a color scan camera mounted vertically above the PCB. The camera has red, green, and blue channels. The green and blue channels capture an image of the illuminated surface of the PCB which is used by a computer to determine two-dimensional information about the component.

Abstract: An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x1, y1, and z1 coordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus.

Abstract: An optical system includes both a microspot broadband spectroscopic ellipsometer and a photoacoustic film thickness measurement system that are supplied laser light by the same laser light source. One of the systems makes a measurement, the result of which is used to adjust a parameter of the other system; e.g. the ellipsometer measures thickness and the photoacoustic system uses the thickness result to measure the speed of sound. In one version, the ellipsometer converts the laser beam to a broad-spectrum beam that provides higher intensity.