Abstract: A display device includes a display panel, a cover glass disposed on the display panel, and a biometric sensor device disposed below the display panel. The biometric sensor device includes a printed circuit board, a biometric sensor disposed on the printed circuit board, and a housing disposed on the printed circuit board and in which an opening is formed. The biometric sensor is disposed in the opening of the housing and is attached to a surface of the display panel through the housing.

Abstract: A semiconductor device can include a first active pattern on a substrate, the first active pattern including a plurality of first active regions that protrude from the substrate. A second active pattern can be on the substrate including a plurality of second active regions that protrude from the substrate. A first gate electrode can include an upper portion that extends over the first active pattern at a first height and include a recessed portion that extends over the first active pattern at a second height that is lower than the first height of the first gate electrode. A second gate electrode can include an upper portion that extends over the second active pattern at a first height and include a recessed portion that extends over the second active pattern at a second height that is lower than the first height of the second gate electrode.

Abstract: In one embodiment, the semiconductor module includes a module substrate and a first substrate mounted on and electrically connected to a first surface of the module substrate. The first substrate has one or more first electrical connectors of the semiconductor module, and the first substrate electrically connecting the first electrical connector to the module substrate.

Abstract: A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.

Abstract: System and method for visual pairing between wireless devices, according to which a first software component is installed on a first WCD with a display screen and a second software component is installed on a second WCD having a camera and then a request to establish an open WCC is sent from the second WCD to the first WCD. If the request is approved by the first WCD, an image with graphically encoded unique one-time information is generated on the display screen using the first software. The image is captured by the camera and the information is decoded in the captured image by using the second software component. This information is used to establish an open WCC between the second WCD and the first WCD.

Abstract: Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.

Abstract: Disclosed herein are an alternating copolymer of phenylene vinylene and oligoarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and oligoarylene vinylene.

Abstract: A method and apparatus of estimating a voicing for speech recognition by using local spectral information. The voicing estimation method for speech recognition includes performing a Fourier transform on input voice signals after performing pre-processing on the input voice signals. The method further includes detecting peaks in the input voice signals after smoothing the input voice signals. The method also includes computing every frequency bound associated with the detected peaks, and determining a class of a voicing according to each computed frequency bound.

Abstract: A burn-in board connection device includes a first connection unit to hold a burn-in board and move in a first direction perpendicular to the burn-in board that is inserted in a chamber of a burn-in test device, a second connection unit to move in a second direction parallel to the burn-in board to attach/detach the burn-in board that is held by the first connection unit to/from a connector disposed in the chamber. A burn-in board connection method includes coupling a finger to the burn-in board by moving the finger in a first direction, attaching the burn-in board to a connector by moving the finger in a second direction, and driving the finger by converting a rotation of a servo motor into a linear movement of the finger.

Abstract: An image forming apparatus is provided that easily allows for removal of paper jams, reduces space for disposing a locking means of a cover, and saves production costs relative to the locking means of a cover. The image forming apparatus forms an image on a printing medium and has a feeding unit, a developing unit, a transfer unit, and an out-feed unit. The image forming apparatus includes a scanning unit that optically reads an image on a paper sheet and creates an electrical image signal. A rear cover is disposed downwardly of the scanning unit and substantially perpendicular to a flat surface of the scanning unit in an opening and closing manner. A top cover is disposed downwardly of the scanning unit and substantially parallel to the scanning unit. The top cover is connected to the rear cover in an opening and closing manner.

Abstract: A memory device and method of reading the memory device is disclosed. The memory device includes a first string of MRAM cells and a second string of MRAM cells. The first string of MRAM cells include a plurality of MRAM cells connected in series and the second string of MRAM cells include another plurality of MRAM cells connected in series. A common connection is controllably connectable to one end of the first string of MRAM cells, and to one end of the second string of MRAM cells.

Abstract: A light is irradiated on a wafer including a plurality of pixels. Image information corresponding to each pixel is measured by sensing the light reflected by the wafer surface. A raw datum is calculated by subtracting the image information of a corresponding pixel from the image information of a target pixel. The target pixel is a subject pixel for detecting a defect. The corresponding pixel is a pixel located in a first device unit and corresponds to the target pixel. The first device unit is located adjacent to a second device unit that includes the target pixel. The threshold region is preset to have at least one pair of upper and lower limits. The target pixel is marked as a defective pixel when the raw datum thereof is included in the threshold region. Accordingly, the killer defect can be detected separate from the non-killer defects that are usually detected together with the killer defects.

Abstract: A method of forming a thin ruthenium-containing layer includes performing a CVD process using butyl ruthenoscene as a ruthenium source material. The thin ruthenium-containing layer may be formed by a one-step or two-step CVD process. The one-step CVD process is performed under a constant oxygen flow rate and a constant deposition pressure. The two-step CVD process includes forming a seed layer and forming a main layer, each of which is performed under a different process condition of a deposition temperature, an oxygen flow rate, and a deposition pressure.

Abstract: A display device includes an insulation substrate, a source electrode and a drain electrode disposed on the insulation substrate and distanced from each other and including a channel area interposed therebetween, a wall exposing portions of the source electrode and the drain electrode, and defining an opening area surrounding the channel area, and an organic semiconductor layer covering the channel area, and comprising a first sub layer and a second sub layer having different grain sizes.

Abstract: Disclosed are a reflection type LCD and method of manufacturing the same. A wiring layer having a first and second metal layer (102, 104) is formed on a substrate (100) including a display region (D) and a pad region (P). Upon the substrate (100) and the wiring layer is formed a first passivation layer (155), and contacts with a wiring terminal (115) and the first metal layer (102). A second passivation layer (180) is formed on the substrate except the pad region (P). The pad contact hole (160) extends to a position under the second passivation layer (180). The second passivation layer (180) covers a region in the pad contact hole (160) where the step coverage of the pad electrode (170) is poor, thereby preventing a battery effect.

Abstract: An optical scanner and a fabricating method thereof are provided. The optical scanner includes a base substrate, a frame, a H-shaped stage, supporters, and a stage driving structure. An interconnection layer having a predetermined pattern is formed on the base substrate. The frame has a rectangular frame shape which is formed on the base substrate. The H-shaped stage has a central area that performs a seesaw motion in the frame with respect to a uniaxial central axis and is positioned on the uniaxial central axis, and four extended areas that extend from two sides of the central area through which the uniaxial central axis passes, parallel the uniaxial central axis. The supporters have support beams that are positioned on the uniaxial central axis and connected to the frame and torsion bars that extend from the support beams and are connected to the central area of the stage.

Abstract: A One-Time Programmable (OTP) memory device can include a first OTP memory cell enabled for programming responsive to protected status associated with a second OTP memory cell configured for programming prior to the first OTP memory cell. Related methods are also disclosed.

Abstract: A method of forming an oxide layer on a semiconductor substrate includes thermally oxidizing a surface of the substrate to form an oxide layer on the substrate, and then exposing the oxide layer to an ambient including predominantly oxygen radicals to thereby thicken the oxide layer. Related methods of fabricating a recessed gate transistor are also discussed.

Abstract: A flat lamp with horizontal facing electrodes is provided, in which a front substrate and a rear substrate are spaced such as to face each other. Walls between the front and rear substrates form a discharging space filled with a discharge gas. A plurality of front electrodes and a plurality of rear electrodes are provided on facing surfaces of the front and rear substrates, respectively. The front and rear electrodes, formed in strips, are arranged in such a way that the front electrodes alternate with the rear electrodes. Accordingly, the discharging distance between front and rear electrodes is lengthened, and many fine discharging operations occur between tip electrodes extending from the lateral sides of the electrode strips and flat portions of corresponding electrode strips. Therefore, a current concentration is prevented, thereby achieving uniform discharging. Also, brightness of the flat lamp increases.