Abstract: The present invention relates to a light emitting diode module capable of facilitating the connection between light emitting diode modules. The present invention provides a light emitting diode module including an insulating layer, a first circuit pattern layer and a second circuit pattern layer which are stacked on a top surface and a bottom surface of the insulating layer respectively and have one ends protruding to an outside of the insulating layer and the other ends positioned inside the insulating layer, a solder resist layer coated on the first circuit pattern layer, a first via formed vertically through a portion of the solder resist layer to be electrically connected to the first circuit pattern layer, a second via formed vertically through a portion of the solder resist layer and the insulating layer to be electrically connected to the second circuit pattern layer and a light emitting element mounted on the solder resist layer.

Abstract: Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Abstract: There is provided a backlight unit. The backlight unit is configured to include: a plurality of light sources; a plurality of light guide plates being arranged alternately with the light sources so that light emitted from the light sources is incident; and a chassis receiving the light sources and the light guide plates, wherein the plurality of light guide plates are disposed to be spaced apart from each other, being symmetrical to each other in order to face the central region of the chassis, a pair of light guide plates opposed to each other on the central region being connected to each other so that the light therefrom is mixed.

Abstract: There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Abstract: Provided is an apparatus for controlling lighting brightness including a light control unit that generates a control signal for controlling the brightness of a plurality of lightings; a digital signal generating unit that converts a signal corresponding to the control signal at each period so as to generate non-periodic digital signals; and a driving voltage generating unit that generate driving voltages by converting the digital signals into analog signals.

Abstract: There is provided a backlight unit including: a chassis having an insulating layer formed on a top thereof; a circuit pattern formed on the insulating layer; a plurality of light emitting diodes formed on the insulating layer to electrically connect to the circuit pattern.

Abstract: A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.

Abstract: Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first electrode layers on the upper clad layer. A metal support layer may be formed on each of the first electrode layers and a trench may be formed between the first electrode layers. The substrate may be removed and a second electrode layer may be formed on the lower clad layer.

Abstract: The present invention relates to phosphor blend for wavelength conversion and a white light emitting device using the same. The phosphor blend of the invention comprises three phosphors, A5(PO4)3Cl:Eu2+, D2SiO4:Eu and MS:Eu at a composition where near ultraviolet radiation is converted into light positioned at a CIE coordinate (x, y), where 0.25?x?0.45 and 0.25?y?0.43, wherein A comprises at least one of Sr, Ca, Ba, and Mg, D comprises at least one of Ba, Sr, and Ca, and M comprises at least one of Sr and Ca. Furthermore, the present invention provides a new white light emitting device in combination of the phosphor blend and a near ultraviolet LED.

Abstract: A circuit board for a light emitting diode package improved in heat radiation efficiency and a manufacturing method thereof. In a simple manufacturing process, insulating layers are formed by anodizing on a portion of a thermally conductive board body and plated with a conductive material. In the light emitting diode package, a board body is made of a thermally conductive metal. Insulating oxidation layers are formed at a pair of opposing edges of the board body. First conductive patterns are formed on the insulating oxidation layers, respectively. Also, second conductive patterns are formed in contact with the board body at a predetermined distance from the first conductive patterns, respectively. The light emitting diode package ensures heat generated from the light emitting diode to radiate faster and more effectively. Additionally, the insulating layers are formed integral with the board body by anodizing, thus enhancing productivity and durance.

Abstract: Provided is a backlight unit including a plurality of light guide plates that each include a first side surface having a housing groove, an upper surface extending from an edge of the first side surface, a flat lower surface facing the upper surface, and a second side surface facing the first side surface of an adjacent light guide plate, and are disposed in parallel; a plurality of light source units that are disposed in the housing grooves of the respective light guide plates; and a bottom case that houses the light guide plates and the light source units.

Abstract: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

Abstract: Provided is a backlight unit including a plurality of light emitting diodes (LEDs) that emit light; a plurality of LED modules having a printed circuit board (PCB) which supports and drives the plurality of LEDs; a plurality of optical sheets that are attached to the top surfaces of the respective LED modules; and a plurality of heat radiating pads that are attached to the rear surfaces of the respective LED modules.

Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.