Abstract: A side-view type light emitting device includes a package body, first and second lead frames, a light emitting diode chip, a resin covering portion, and at least one spacer portion. The package body has a first surface provided as a mounting surface, a second surface located opposite to the first surface, side surfaces located between the first surface and the second surface, and a concave portion formed at one of the side surfaces corresponding to the light emitting surface.

Abstract: An anodized metal substrate module superior in heat radiation properties and reduced in manufacturing costs. A metal plate is provided. An anodized film is formed on the metal plate. A heat generating device is mounted on the metal plate. Also, a conductive line is formed on the anodized film.

Abstract: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

Abstract: The present invention relates to a method of manufacturing an LED device which emits light of multi-wavelengths. The invention also relates to a method of manufacturing LED devices which emit light of high quality from throughout the whole surface in a uniform manner. In particular, utilizing the manufacturing method of LED devices which emit light of multi-wavelengths makes it possible to produce LED devices of high quality in a simple and cost-efficient way, not by using adhesives, but by a sputtering or PLD method. In addition, since the characteristics of the desired emitted light can be controlled by controlling the amount and type of the phosphors during the manufacture of sputtering targets, high quality LED devices can be manufactured easily.

Abstract: Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

Abstract: Disclosed herein is a backlight unit equipped with LEDs. The backlight includes an insulating substrate, a plurality of LED packages, an upper heat dissipation plate, and a lower heat dissipation plate. The insulating substrate is provided with predetermined circuit patterns. The LED packages are mounted above the insulating substrate, and are electrically connected to the circuit patterns. The upper heat dissipation plate is formed on the insulating substrate, and is configured to come into contact with the circuit patterns and to dissipate heat. The lower heat dissipation plate is formed on the insulating substrate, and is configured to transmit heat transmitted through the upper heat dissipation plate. The upper heat dissipation plate and the lower heat dissipation plate are connected to each other by at least one through hole, and the through hole and the upper heat dissipation plate have a predetermined area ratio.

Abstract: Provided is a white light emitting diode (LED) including a blue LED chip; and yellow, green, and red light emitting phosphors that are coated on the blue LED chip at a predetermined mixing ratio and converts light, emitted from the blue LED chip, into white light.

Abstract: A cooling device for a light emitting device package of a vibration generating machine, includes: a heat releasing plate provided at one side of the light emitting device package; a vibrator disposed to face the heat releasing plate and vibrating to generate an air flow according to vibration of the vibration generating machine; and a vibration transfer unit configured to connect the vibrator and the heat releasing plate to allow the air flow generated from the vibrator to be transferred to the heat releasing plate so as to be cooled.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: Provided are an alkaline earth metal silicate-based phosphor which is a compound represented by Formula 1 below, and a white light-emitting device (LED) including the same: (M11-x-yAxBy)aMgbM2cOdZe??Formula 1 wherein, M1 is one selected from the group consisting of Ba, Ca, and Sr; M2 is at least one selected from Si or Ge; A and B are each independently one selected from the group consisting of Eu, Ce, Mn, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Bi, Sn, and Sb; Z is at least one selected from the group consisting of a monovalent or divalent element, H, and N; and 0<x<1, 0?y?1, 6.3<a<7.7, 0.9<b<1.1, 3.6<c<4.4, 14.4<d<17.6, 14.4<d+e<17.6, and 0?e?0.18. The alkaline earth metal silicate-based phosphor has a broad excitation wavelength range, and thus, both a UV-LED and a blue LED can be used as excitation sources for white LEDs.

Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.

Abstract: Disclosed are an illumination apparatus for adjusting a color temperature and brightness, which can determine duties of pulse width modulation (PWM) control pulses for driving two light sources having different color temperatures, and an illumination system including the same. The illumination apparatus includes first and second light source units emitting light of different color temperatures, first and second pulse width modulation (PWM) driving units respectively driving the first and second light source units by a PWM control method, and a duty control unit controlling respective duties of PWM control pulses of the first and second PWM driving units according to a color-temperature set value and a brightness set value input from the outside. The duty control unit controls the duties such that the color-temperature set value is reflected in the respective duties of the PWM control pulses of the first and second PWM driving units in a complementary relation.

Abstract: There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.

Abstract: A light emitting diode module for a line light source includes a circuit board having a wire pattern formed thereon and a plurality of LED chips directly mounted and disposed in a longitudinal direction on the circuit board and electrically connected to the wire pattern. The module also includes a reflecting wall installed on the circuit board to surround the plurality of LED chips, reflecting light from the LED chips. The module further includes a heat sink plate underlying the circuit board to radiate heat generated from the LED chip.

Abstract: There is provided a light emitting device package including: a package body providing a chip mounting area and including first and second lead terminals; an LED chip mounted on the chip mounting area and electrically connected to the first and second lead terminals; a groove portion disposed around the LED chip in the chip mounting area; and a wavelength conversion portion formed of a resin containing a wavelength conversion material with which to enclose the LED chip and having an outer shape defined by the groove portion.

Abstract: A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract: A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: An LED package having an anodized insulation layer which increases heat radiation effect to prolong the lifetime LEDs and maintains high luminance and high output, and a method therefor. The LED package includes an Al substrate having a reflecting region and a light source mounted on the substrate and connected to patterned electrodes. The package also includes an anodized insulation layer formed between the patterned electrodes and the substrate and a lens covering over the light source of the substrate. The Al substrate provides superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED.