Abstract: There is provided a light emitting diode (LED) package in which a phosphor layer encapsulating an LED chip is formed uniformly to facilitate a process. The LED package includes: a package body having a mounting area; a holding part mounted on the mounting area to expose a portion of the mounting area; an LED chip mounted on the mounting area, the LED chip surrounded by the holding part to emit light; and a phosphor layer held by the holding part to seal a space defined by the holding part, the phosphor layer converting a wavelength of the light from the LED chip.

Abstract: A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer.

Abstract: There is provided a surface light source using white light emitting diodes including: a plurality of white light emitting diodes arranged at a predetermined distance from one another, wherein the white light emitting diodes are arranged such that a light emitting diode unit defined by each of the white light emitting diodes and corresponding ones of the white light emitting diodes disposed at a closest distance from the each white light emitting diode has a central light amount ranging from 80% to 120% with respect to an average light amount of the white light emitting diodes.

Abstract: The present invention relates to a radiating member of an LED illumination device and the LED illumination device using the same. Provided is an LED illumination device includes a printed circuit board mounted with LED chips; and a radiating member provided on a rear surface of the printed circuit board, wherein the radiating member includes a radiating pipe vertically attached to a center of the printed circuit board, radiating pins surrounding and attached to the printed circuit board at a predetermined interval, radiating disks provided below the radiating fins and arranged along the radiating pipe at a predetermined interval, and a radiating member case for covering the radiating member.

Abstract: Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

Abstract: A planar light source and a backlight unit including the same are disclosed. The planar light source includes a light emission region formed by arrangements of light emitting devices. The light emission region includes first to nth separate parts each having a center of the light emission region as one vertex (n: natural number of 2 or higher). The first separate part includes light emitting devices arranged two-dimensionally in first and second directions. A pitch in the first direction is different from a pitch in the second direction in at least a portion of the two-dimensional arrangement structure. Light emitting devices of each of the second to nth separate parts have an arrangement structure obtained by a clockwise or counter-clockwise rotation of the arrangement structure of the light emitting devices of the first separate part by an angle of 1/n×360° about the center of the light emission region.

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract: A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.

Abstract: A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Abstract: A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.

Abstract: A sub-mount, a light emitting diode package, and a method of manufacturing thereof are disclosed. A sub-mount, on which multiple light emitting diodes are mounted, can include a multiple number of metal bodies on which the light emitting diodes are respectively mounted, and an oxide wall interposed between the metal bodies such that the adjacent metal bodies are supported by each other but electrically disconnected from each other. By utilizing certain embodiments of the invention, a high heat releasing effect may be obtained, and manufacturing costs may be reduced.

Abstract: Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.

Abstract: A backlight unit of the invention is reduced in thickness, weight and manufacturing costs but improved in heat releasing efficiency. In the backlight unit, a flexible printed circuit board has at least one through hole perforated therein. An LED package is disposed on a top portion of the flexible printed circuit board corresponding to the through hole. The backlight unit of the invention employs the flexible printed circuit board in place of a metal printed circuit board as a means to conduct current to the LED package. This produces a slimmer and lighter backlight unit and also saves manufacturing costs. In addition, the LED package is directly bonded onto a bottom plate by a heat conducting adhesive, thereby ensuring heat generated from the LED package to be released more quickly.

Abstract: There is provided a surface light source using white light emitting diodes including: a plurality of white light emitting diodes arranged at a predetermined distance from one another, wherein the white light emitting diodes are arranged such that a light emitting diode unit defined by each of the white light emitting diodes and corresponding ones of the white light emitting diodes disposed at a closest distance from the each white light emitting diode has a central light amount ranging from 80% to 120% with respect to an average light amount of the white light emitting diodes.

Abstract: Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.

Abstract: A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.

Abstract: There are provided a light emitting device and a backlight unit including the same. The light emitting device includes a package body having opposing first and second main surfaces and side surfaces, and formed of a curable resin; first and second external terminal blocks opposing each other and each having first and second surfaces formed on the first and second main surfaces and side surfaces, the first and second external terminal blocks each including a connecting part having a bonding portion located inside the package body and a terminal portion connected to the bonding portion and exposed outward; and an LED chip including an electrode forming surface where first and second electrodes are formed and a light emitting surface located opposite to the electrode forming surface, the LED chip having the first and second electrodes electrically connected to the bonding portions of the first and second external terminal blocks, respectively.

Abstract: A light emitting device package is provided. The light emitting device package comprises a base substrate on which a wiring pattern is formed; a light emitting device mounted on the base substrate to emit light when supplied with driving power through the wiring pattern; a molded lens stably seated on the base substrate and having an inner space for sealing the light emitting device and reflective surfaces formed along outer sides facing the inner space to guide light from the light emitting device in an effective display direction; and a sealing resin between the inner space to bond the base substrate to the molded lens, whereby the packaging structure is simplified so that an assembly process and reliability testing are simplified, process losses due to defects are minimized, and the light extraction efficiency from the light emitting device and heat-dissipation performance are improved.

Abstract: Provided is a method of forming a fine pattern having a pattern dimension of 1 ?m or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.

Abstract: There are provided a plane light source and an LCD backlight unit having the same.