Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Abstract: There are provided a switching module and a switching synchronization system. The switching module includes a plurality of first to n-th switching modules according to an exemplary embodiment of the present invention, wherein each of the first to n-th switching modules includes: a button unit that includes a plurality of switching buttons; a state display unit that includes a plurality of display lamps corresponding to each of the plurality of switching buttons in the button unit; a switch controller that controls the operation of the state display unit according to the operation of each of the plurality of switching buttons in the button unit; and a switch communication unit that transmits the wireless switching control signal including the switching control and provides the switching control signals included in the wireless switching control signals received to the switch controller.

Abstract: In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Abstract: There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n?2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.

Abstract: A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light emitting structure. The patterns of the metal layer each have a shape corresponding to a cross-sectional shape of a wanted final light emitting device and are spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed. The light emitting structure is divided into a plurality of individualized light emitting structures by removing the light emitting structure below the exposed region between the patterns of the metal layer. The sapphire substrate is separated from the light emitting structure by irradiating a laser beam.

Abstract: Disclosed herein are a system and a method for controlling lighting. In the lighting control system, one or more lighting devices are installed in a separate area within a building and a remote controller generates a scheduling data by setting lighting scenes at each time and controls the lighting of the corresponding lighting device via a short range wireless communication. In addition, the remote controller transmits the scheduling data to a remote server through a gateway and when the remote controller is not normally operated, the remote server controls the lighting device according to the scheduling data through the gateway.

Abstract: A multilayered white light emitting diode and a method of fabricating the same include forming a phosphor mixture layer including a green phosphor and a blue phosphor on a UV light emitting diode and forming a red quantum dot layer on the phosphor mixture layer. In the white light emitting diode of the present invention, the quantum dots are excited by green and blue visible light, thus increasing luminescence efficiency and realizing stable white light. Moreover, the white light emitting diode can be widely used as a light source having high output and high efficiency, thus being capable of substituting for a backlight unit of an illumination device or display device.

Abstract: A dimming buck type light emitting diode (LED) driving apparatus includes a main switch controlling a driving current flowing into an LED; a current detector detecting a driving current flowing into the LED; a power level determination unit determining a level of the driving power; a dimming capacitor for dimming control; a dimming control unit controlling charging and discharging of the dimming capacitor according to a power level determination signal and an enable signal; a reset circuit unit generating a reset signal according to a detection voltage from the current detector and a voltage of the dimming capacitor; a pulse generation unit generating a pulse signal; and a latch set by the pulse signal of the pulse generation unit and reset by the reset signal of the reset circuit unit to generate a switching signal, and turning on and off the main switch using the switching signal.

Abstract: Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

Abstract: A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Abstract: A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

Abstract: The invention provides a high quality composite phosphor powder which ensures diversity in emission spectrum, color reproduction index, color temperature and color, a light emitting device using the same and a method for manufacturing the composite phosphor powder. The composite phosphor powder comprises composite particles. Each of the composite particles includes at least two types of phosphor particles and a light transmitting binder. The phosphor particles have different emission spectrums. In addition, the light transmitting binder is formed between the phosphor particles and binds them together.

Abstract: A chip coated LED package and a manufacturing method thereof. The chip coated LED package includes a light emitting chip composed of a chip die-attached on a submount and a resin layer uniformly covering an outer surface of the chip die. The chip coated LED package also includes an electrode part electrically connected by metal wires with at least one bump ball exposed through an upper surface of the resin layer. The chip coated LED package further includes a package body having the electrode part and the light emitting chip mounted thereon. The invention improves light efficiency by preventing difference in color temperature according to irradiation angles, increases a yield, miniaturizes the package, and accommodates mass production.

Abstract: The invention provides an LED package capable of effectively releasing heat emitted from an LED chip out of the package and a fabrication method thereof. For this purpose, at least one groove is formed on an underside surface of the substrate to package the LED chip and the groove is filled with carbon nanotube material. In the LED package, a substrate having at least one groove on the underside surface is prepared. A plurality of electrodes are formed on a top surface of the substrate. Also, at least the one LED chip is mounted over the substrate to have both terminals electrically connected to the upper electrodes. In addition, carbon nanotube filler is filled in the groove of the substrate.

Abstract: A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.

Abstract: There are provided a plane light source and an LCD backlight unit having the same. A plane light source having a plurality of light emitting devices arranged in a light emitting device matrix having rows and columns at a substrate according to an aspect of the invention includes a first matrix having a plurality of light emitting devices arranged in rows and columns; and a second matrix having a plurality of light emitting devices arranged in rows and columns, each of the light emitting devices located within a quadrangle formed by four neighboring light emitting devices included in the first matrix, wherein a pitch S between one light emitting device included in the light emitting device matrix and another light emitting device most adjacent to the one light emitting device satisfies the following equation to obtain uniform luminance distribution at a position distant from a light emitting surface of the light emitting device by an optical length l, S.ltoreq.12.times.tan(.theta.2+.alpha.), Equation where—.

Abstract: There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.

Abstract: The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.

Abstract: Provided is a method of manufacturing a light emitting diode (LED) package, the method including the steps of: preparing a package substrate having an LED chip mounted thereon; preparing a mold which has a convex portion, a plane portion extending outward from the convex portion, and a projecting portion formed on the lower surface of the plane portion, the projecting portion having a sharp end; engaging the mold with the package substrate such that the projecting portion is contacted with the surface of the package substrate; and filling transparent resin into the convex portion.

Abstract: A light emitting diode (LED) array module includes a plurality of LEDs; and a substrate which mounts the LEDs and has a built-in cooling device for cooling heat generated when the LED is driven. The cooling device includes a heat radiation space formed on the substrate and a minute passage member which is wick- or mesh-structured to form a plurality of minute passages that operate by a heat pipe principle in the heat radiation space. The cooling device operating by the heat pipe principle is integrally formed on the substrate mounted with the LEDs, so heat radiation performance of the LEDs is enhanced, such that the LEDs can operate stably for a long time.