Abstract: A memory device includes a number of different memory dies and/or planes. One or more host operations, such as write operations and/or read operations, are performed on each memory die and/or plane in sequence. For example, from memory die 0 to memory die n. A garbage collection process is performed in parallel with the host operations. However, the garbage collection process is performed in a reverse order when compared with the order of the host operations. For example, the garbage collection process is performed from memory die n to memory die 0.

Abstract: Methods and apparatus for efficiently handling large data files and their updates in NAND memory. In one example, provided is a data-storage system configured to reduce the frequency of data relocations by segregating a large data file into a plurality of subfiles. The size of such subfiles is appropriately selected to reduce the probability of occurrence for host-relocation conflicts and the magnitude of write amplification, thereby enabling the data-storage system to provide better quality of service while substantially maintaining acceptable levels of other pertinent performance characteristics. In some examples, a sequence of host read-modify-write commands is handled by generating a copy of implicated subfiles in a data buffer, applying subfile updates to the copy in the data buffer in accordance with the sequence, and relocating the implicated subfiles in the NAND memory using the updated versions thereof from the data buffer.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and comprising a vertical semiconductor channel and a memory film. The memory film includes a contoured blocking dielectric layer including sac-shaped lateral protrusions located at levels of the electrically conductive layers, a tunneling dielectric layer in contact with the vertical semiconductor channel, and a vertical stack of charge storage material portions located within volumes enclosed by the sac-shaped lateral protrusions.

Abstract: The present disclosure generally relates to a XTS cache operation during a power down event. Upon detection of power loss, data that is waiting to be encrypted needs to be flushed to the memory device. For any unaligned data or data less than a flash management unit (FMU) size, the data is grouped together and, if necessary, padded to reach the FMU size and then encrypted, merged with other data FMUs, and written to the memory device. Grouping the unaligned data reduces the amount of padding necessary to reach FMU size and also reduces the amount of data to be encrypted. As such, data flushing can be accomplished using the limited amount of remaining power during the power loss event.

Abstract: Optimizing the time that a link is active in a data storage device is desirable. Changing the way the device processes commands will minimize the link uptime and maximize the time that the link can remain in a low power mode. The data storage device will control the command arbitration from the host to aggregate together command chunks as large as possible, such that will extend the link down durations, and won't need to wake the link up occasionally. In another approach the execution of commands from internal buffers of the host will be prioritized according to command-batch completion criteria, and not based on minimizing the latency of a single command.

Abstract: A data storage device comprises a non-volatile storage medium configured to store user data, a data port configured to transmit data between a host computer system and the data storage device, an energy harvesting component configured to produce electrical energy from an ambient energy source, and a beacon component, configured to wirelessly transmit a signal. The beacon component is configured to consume the electrical energy to wirelessly transmit the signal. The data storage device may further comprise an energy store configured to store the electrical energy produced by the energy harvesting component as stored energy.

Abstract: A write pattern of a host device is used to dynamically determine when to initiate a garbage collection process on a data storage device. The write pattern of the host device is based on a number of I/O commands received from the host device and on a number of available memory blocks in the data storage device. If the write pattern of the host device indicates that fewer than a threshold number of memory blocks will be available after a predetermined number of additional I/O commands are received, the garbage collection process is initiated. An amount of valid data that is transferred from one memory location to another memory location during the garbage collection process is also dynamically determined. Thus, a garbage collection process may be tailored to a specific host device.

Abstract: Improved automation can be achieved using command-parts. Rather than using a command to determine which key to use, command partitioning will generate a task-ID based on a key index table to determine what key to use. Based on the task-ID, an encryption engine (XTS) will know which key to use. The command is split into partitions with the same attributes. The amount of task-IDs created will equal the amount of partitions. Automation will be based on the task-IDs to create a completion for a host. The controller will then return to the key index table to count the completed commands and send the completion to the host.

Abstract: Technology is disclosed herein for checking data integrity in a non-volatile storage system. The storage system may operate in a first mode in which a data integrity check is performed in closed blocks until more than an allowed number of word lines fail the data integrity check. After a closed block has more than the allowed number of the word lines fail the data integrity check, then the storage system may operate in a second mode in which a data integrity check is performed in open blocks. The allowed number of word lines may be equal to the number of word lines that can be recovered by XOR data in the event data is uncorrectable by an ECC engine. The data integrity check of a target word line in an open block may be performed after programming a word line adjacent to the target word line in the open block.

Abstract: A method of forming a structure includes forming an alternating stack of first material layers and second material layers over a substrate, forming a mask layer over the alternating stack, forming a cavity in the mask layer, forming a first cladding liner on a sidewall of the cavity in the mask layer, and forming a via opening the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavity in the mask layer through the alternating stack using a combination of the first cladding liner and the mask layer as an etch mask.

Abstract: An apparatus is provided that includes a plurality of memory cells, logic circuits coupled to the memory cells and configured to store 4-bit data in each of the memory cells, and a control circuit coupled to the memory cells and the logic circuits. The control circuit configured to cause the logic circuits to store 3-bit data in each of the memory cells.

Abstract: A storage device performs a format operation for host devices using different format times and commands configurations. When a controller on the storage device receives an erase command from a host device, the controller determines the format time and a chunk size associated with data in the erase command. The controller executes a first format operation scheme, a second format operation scheme, or a third format operation scheme to perform an erase operation on the data in the erase command within the format time. The controller halts execution of the erase operation and returns operation to the host device when the format time expires.

Abstract: A data storage device initially stores incoming data from a host in single-level cell (SLC) blocks and later folds the data from those blocks into a multi-level cell (MLC) block. If an error is detected during the folding operation, the data storage device pauses the folding operation, programs data that failed to be program and other data from the initial SLC blocks into another SLC block, and then resumes the folding operation. This can be part of a dynamic runtime zoning process where the data storage device determines a set of wordlines that will fall under one zone at runtime during an enhanced post-write-read (EPWR) operation.

Abstract: Embodiments herein provide a data storage device including a non-volatile memory, a second memory, and a controller coupled to the non-volatile memory and the second memory. The second memory is configured to store a plurality of delta queues. Each of the plurality of delta queues includes delta queue entries. The delta queue entries are grouped into one or more logical-to-physical (L2P) pages. Each of the one or more L2P pages is associated with a plurality of logical flash management units (LFMUs) corresponding to a plurality of physical addresses in the non-volatile memory. The controller is configured to determine that a delta queue flush is required. In response to determining that the delta queue flush is required, the controller selects one of the plurality of delta queues to flush, and flushes the one or more L2P pages stored in the one of the plurality of delta queues to the non-volatile memory.

Abstract: A memory device includes a memory material portion, and an ovonic threshold switch selector element. The ovonic threshold switch selector element includes a first carbon-containing electrode comprising carbon and a metal, a second carbon-containing electrode comprising the carbon and the metal, and an ovonic threshold switch material portion located between the first electrode and the second electrode.

Abstract: Contact via openings are formed through a retro-stepped dielectric material portion in a three-dimensional memory device to underlying etch stop structures. The etch stop structures may include a stepped conductive or semiconductor etch stop plate overlying stepped surfaces in the staircase region. The contact via openings are extended through the etch stop structures. Alternatively, electrically conductive layers, including a topmost dummy electrically conductive layer in the staircase region, may be employed as etch stop structures. In this case, the contact via openings can be extended through the electrically conductive layers. Insulating spacers are formed at peripheral regions of the extended contact via openings. Contact via structures surrounded by the insulating spacers are formed in the extended contact via openings to a respective underlying electrically conductive layer.

Abstract: A memory die includes an alternating stack of insulating layers and electrically conductive layers, a semiconductor material layer located over the alternating stack, a dielectric spacer layer located over the semiconductor material layer, a memory opening vertically extending through the alternating stack, through the semiconductor material layer, and at least partly through the dielectric spacer layer, a memory opening fill structure located in the memory opening and including a dielectric core, a vertical semiconductor channel having a hollow portion which surrounds the dielectric core and a pillar portion which does not surround the dielectric core, and a memory film, and a source layer located over the dielectric spacer layer and contacting the pillar portion. In one embodiment, a tubular spacer laterally surrounds the pillar portion, is laterally spaced from the pillar portion by a cylindrical portion of the memory film, and contacts a cylindrical sidewall of the semiconductor material layer.

Abstract: A data storage device and method are disclosed for host-controlled data compression. In one embodiment, a data storage device is provided comprising a memory and a controller configured to communicate with the memory. The controller is further configured to selectively compress target data, wherein the target data is only compressed in response to receiving a compression request from a host; receive the compression request from the host; and in response to receiving the compression request from the host, compress the target data. Other embodiments are disclosed.

Abstract: A data storage device implements a Zoned Namespace (ZNS) storage architecture. The data storage device delays the execution of write commands that are received out of sequence instead of rejecting the write commands. The write commands that are received out of sequence are reordered according to a logical block address (LBA) associated with each write command. The data storage device also checks for deadlock conditions that may arise due to the execution of the write commands being delayed and/or due to the write commands being reordered.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel, a memory film in contact with the vertical semiconductor channel, and a vertical stack of tubular dielectric spacers laterally surrounding the memory film. The tubular dielectric spacers may include tubular graded silicon oxynitride portions having a composition gradient such that an atomic concentration of nitrogen decreases with a lateral distance from an outer sidewall of the memory film, or may include tubular composite dielectric spacers including a respective tubular silicon oxide spacer and a respective tubular dielectric metal oxide spacer. Each of the electrically conductive layers has a hammerhead-shaped vertical cross-sectional profile.