Abstract: A semiconductor device according to one or more embodiments may include: on a semiconductor substrate, a high voltage circuit region; a transistor element region; an isolation region that elementally isolates the transistor element region from the high voltage circuit region; and a capacitively coupled field plate including plural lines of conductors, wherein the capacitively coupled field plate is provided to extend circumferentially along an outer circumferential portion of the high voltage circuit region and across the transistor element region, in a plan view of the semiconductor device, and one or more dividing sections divides at least one of the plural lines of conductors in the capacitively coupled field plate to make the at least one line discontinuous.

Abstract: An analog-digital conversion circuit is disclosed for comparing a comparison potential with a reference potential generated based on a reference power supply to convert a comparison potential to a digital value. An analog-to-digital converter generates the comparison potential based on a sampled and held input potential, the digital value, and the reference power supply. A current amount control unit controls current amount flowing to the current amount control element in each bit circuit. In response to second switches of the bit circuits being turned on in order from the upper bit in each bit circuit by the digital value, the current amount control unit applies a current control potential to the current amount control element in any of the bit circuits that the noise current is more than allowable value while the noise current proportional to the charge flowing from the capacitor is more than the allowable value.

Abstract: One or more embodiments of a successive approximation type analog-to-digital converter that converts an analog input into a digital conversion value and outputs the digital conversion value, may include: a capacitance DAC that generates a bit-by-bit potential based on an analog input; a comparator that compares the potential generated by the capacitance DAC, wherein the comparator is a memory cell rewriting type, the comparator includes a first stage current mirror type operational amplifier; and a second stage memory cell; a conversion data generator that generates conversion data of resolution bits based on a comparison result of the comparator; and a correction circuit that corrects an output error of the conversion data caused by an offset error of the comparator by adding or subtracting an offset correction value that is a fixed value, and outputs the conversion data as a digital conversion value.

Abstract: A semiconductor device may include: a drift region of a first conductivity type; a base region of a second conductivity type arranged on the drift region; an emitter region of the first conductivity type arranged on the base region; a field stop region of the first conductivity type arranged in contact with the drift region; a collector region of the second conductivity type in contact with the field stop region; a main gate electrode electrically insulated from the base region and the collector region; a control gate electrode electrically insulated from the base region and the collector region; a gate pad on the drift region; a first resistor electrically connected between the gate pad and the main gate electrode; and a second resistor electrically connected between the gate pad and the control gate electrode. A resistance value of the first resistor may be greater than the second resistor thereof.

Abstract: An analog-to-digital converter is disclosed that converts an input analog potential to a digital conversion value. An analog-to-digital converter according to one or more embodiments may include a comparator that compares the input analog potential with a reference potential; and a conversion circuit that measures comparison operation time from a start to an end of a comparison operation by the comparator and outputs the digital conversion value according to the measured comparison operation time and a comparison result by the comparator.

Abstract: A semiconductor is disclosed that may include: a first drift region; a base region arranged on the first semiconductor layer; a source region arranged on the base region; a main electrode electrically connected to the source region; and a gate electrode structure that penetrates the source region and base region and reaches the first drift region, wherein the gate electrode structure comprises: a gate electrode; and an insulating material that insulates the gate electrode from the first drift region and the base region; and a field plate structure reaching the first drift region deeper than the gate electrode structure, wherein the field plate structure comprises: a field plate; a resistive part that electrically connects the main electrode to the field plate; and an insulating material that insulates the field plate and the resistive part section from the first drift region and the base region.

Abstract: A semiconductor device according to one or more embodiments is disclosed that may include a first substrate comprising a single-crystalline SiC substrate; a second substrate comprising a polycrystalline SiC substrate; and an interface layer sandwiched between the first substrate and the second substrate and comprising at least elements of phosphorus and chromium.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device according to one or more embodiments are disclosed. An interface layer is formed by implanting ionized impurities into a first layer comprising single-crystalline silicon carbide (SiC). Surfaces of the interface layer and a second layer comprising polycrystalline silicon carbide (SiC) are activated. The activated surfaces of the interface layer and the second layer are contacted and bonded. A covering layer is formed to cover a top surface and sides of the first layer, sides of the interface layer, and sides of the second layer.

Abstract: A pipeline processing unit includes a fetch unit that fetches the instruction for the thread having an execution right, a decoding unit that decodes the instruction fetched by the fetch unit, and a computation execution unit that executes the instruction decoded by the decoding unit. When the WAIT instruction for the thread having the execution right is executed, an instruction holding unit holds instruction fetch information on a processing target instruction to be processed immediately after the WAIT instruction. An execution target thread selection unit selects a thread to be executed based on a wait command and, in response to a wait state started from the execution of the WAIT instruction being canceled, processes the processing target instruction from decoding thereof based on the instruction fetch information on the processing target instruction held in the instruction holding unit.

Abstract: A dimming agent according to one or more embodiments is disclosed that may include at least one of terbium, praseodymium, manganese, titanium. A diffuse reflection intensity of the dimming agent in a wavelength of from 400 nm to 750 nm may be 80% or less.

Abstract: A first semiconductor region, a second semiconductor region, and a third semiconductor region are arranged in layers. Trenches penetrate through the second semiconductor region and reach the first semiconductor region. Each of the trenches may include a gate electrode, and an insulating film insulating the gate electrode from the first semiconductor region and the second semiconductor region. An upper electrode is electrically connected to the second semiconductor region and the third semiconductor region. A fourth semiconductor region of the second conductivity type is arranged on an outer side of the trench of which the gate electrode is an outermost gate electrode in a plan view. An edge trench is arranged on an outer side of the fourth semiconductor region. The fourth semiconductor region is electrically connected to the upper electrode and a bottom of the fourth semiconductor may be arranged deeper than a bottom of the second semiconductor region.

Abstract: A semiconductor device is disclosed that includes a group of trenches positioned in active region inside a first semiconductor region. A first trench is positioned in an outer peripheral region on an outer side of an active region. A second trench is positioned on an outer side of the first trench positioned in the outer peripheral region on the outer side of the active region. A mesa portion is positioned between the first and the second trenches. An insulating layer is positioned inside the first and second trenches. A second field plate is positioned inside the insulating layer in the first trench. A third field plate positioned inside the second insulating layer in the second trench. The mesa portion includes the semiconductor region electrically coupled to the first main electrode on an outermost side. The first trench does not have the gate electrode at upper part of the first trench.

Abstract: A semiconductor device according to one or more embodiments may include a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type with a higher impurity concentration than an impurity concentration of the first semiconductor region, the second semiconductor region being provided on a first principal surface of the first semiconductor region, a third semiconductor region of a second conductivity type provided on an upper surface of the second semiconductor region, the third semiconductor region being doped with an impurity in accordance with an impurity concentration profile including peaks along a film thickness direction, a fourth semiconductor region of the first conductivity type provided on an upper surface of the third semiconductor region.

Abstract: An abnormality detection circuit and method of detecting an abnormality in a CPU is disclosed that may include counting a count value from an initial value to a timeout value; storing a seed value readable from the CPU; generating a key value for verification by performing a specified arithmetic processing on the seed value; waiting for a key value to be written by the CPU; comparing the key value written by the CPU with the key value for verification; and when the count value is equal to the timeout value without the counter being reset, in response to the key value and the key value for verification matching, resetting the counter and storing the seed value to be determined at the time of resetting the counter in the seed value storage section.

Abstract: An integrated circuit for digitally controlling a critical mode power factor correction (PFC) circuit according to one or more embodiments may include: an output voltage detector and a switching current detector; an A/D converter and a sample and hold circuit that perform analog-to-digital conversion of an output signal of the output voltage detector and the switching current detector; an arithmetic unit that performs calculation based on the output signal of the A/D converter and generates a pulse signal to turn on/off a switching device of the PFC circuit; a correction value calculator that calculates, based on a switching frequency of the PFC circuit, a correction value for linearly correcting the output signal of the A/D converter; and an adder that adds the correction value to the output signal of the A/D converter to correct the output signal of the A/D converter and inputs the corrected output signal to the arithmetic unit.

Abstract: A method may include detecting an output voltage of the output smoothing capacitor in the bridgeless interleaved power factor correction circuit of a critical mode, comparing the detected output voltage with a reference voltage, controlling the first and the second half-bridge circuits included in the bridgeless interleaved power factor correction circuit of the critical mode to be on and off based on an error signal between the output voltage and the predetermined reference voltage, measuring ON time of a synchronous rectification switch operation of the first half-bridge circuit by measuring a time period between OFF timing of an active switch of the first half-bridge circuit and output of a differentiation signal generated by a differentiation circuit included in the bridgeless interleaved power factor correction circuit of the critical mode; and assigning the measured time to next ON time of the synchronous rectification switch operation of the second half-bridge circuit.

Abstract: An analog-to-digital converter that converts an inputted analog signal into a digital value is disclosed that may include unit circuits that each generate reference voltages comprising regular potential intervals by a series resistor circuit connected between a high potential side reference voltage and a low potential side reference voltage and convert the reference voltages into a digital value by comparing the reference voltages with the inputted analog signal, and an adder that adds the digital values converted by the unit circuits. Each unit circuit may include coupling switches that couple the series resistor circuit with the series resistor circuit of another one of the unit circuits and connect the series resistor circuits between the high potential side reference voltage and the low potential side reference voltage and a sharing switch that shares the inputted analog signal with the other unit circuit that is coupled with the series resistor circuit.

Abstract: A semiconductor device is disclosed that includes a group of trenches positioned in active region inside a first semiconductor region. A first trench is positioned in an outer peripheral region on an outer side of an active region. A second trench is positioned on an outer side of the first trench positioned in the outer peripheral region on the outer side of the active region. A mesa portion is positioned between the first and the second trenches. An insulating layer is positioned inside the first and second trenches. A second field plate is positioned inside the insulating layer in the first trench. A third field plate positioned inside the second insulating layer in the second trench. The mesa portion includes the semiconductor region electrically coupled to the first main electrode on an outermost side. The first trench does not have the gate electrode at upper part of the first trench.

Abstract: A power conversion device according to an embodiment may include: an output circuit configured to perform a power conversion operation of converting input power into an output power and outputting the output power; and a microcomputer configured to control the power conversion operation by the output circuit with power supplied from an internal power source of the output circuit, wherein the microcomputer outputs a status signal notifying whether the microcomputer is in a power shutdown permit period or a power shutdown inhibit period, and the output circuit includes a power supply stop circuit configured, when receiving the operation stop signal that instructs to stop the power conversion operation, to stop the power supply from the internal power source to the microcomputer on a condition where the status signal indicates that the microcomputer is in the power shutdown permit period.

Abstract: A semiconductor device is disclosed including a sub-layer with first conductivity type, a drift layer with first conductivity type, a base region with second conductivity type positioned on the drift layer, a source region in contact with the base region, a source electrode, a plurality of trenches, at least one of the trenches in contact with the drift layer, the base region, and the source region, a plurality of insulating regions, at least one of the insulating regions positioned inside of each trench, a plurality of gate electrodes, at least one of the gate electrodes positioned inside of each trench; and a plurality of field plates, at least one of the field plates electrically connected to the source electrode and positioned in the insulating region in the trench. The field plate comprises high-resistance polysilicon.