Abstract: The disclosure relates to a method for etching a molybdenum feature, comprising the steps of: a) oxidizing a thickness portion of the molybdenum feature using a thermal oxidation process to form a thermal molybdenum oxide layer, and b) dissolving the thermal molybdenum oxide layer using a wet chemistry.

Abstract: Disclosed are a substrate treating apparatus and a substrate reversing method. The substrate treating apparatus includes a supporting portion, a transport mechanism, and a reversing mechanism. The transport mechanism includes a first suction portion and a hand driving unit. The reversing mechanism includes a second suction portion and a rotation driving unit. When the transport mechanism transports a substrate to the supporting portion, the first suction portion is located above the substrate and sucks the substrate upward while causing gas to flow along a top face of the substrate, and the hand driving unit moves the first suction portion to the supporting portion. When the reversing mechanism receives the substrate from the supporting portion, the second suction portion is located above the substrate supported by the supporting portion and sucks the substrate upward while causing gas to flow along the top face of the substrate.

Abstract: A substrate holding apparatus is used for a substrate processing apparatus for supplying the processing liquid to a substrate. The substrate holding apparatus includes a holding member, a ring member, and a rotation mechanism. The holding member holds the substrate in a horizontal attitude. The ring member is in a shape of a ring surrounding a peripheral edge of the substrate held by the holding member, and has an upper surface level with or positioned below a front surface of the substrate. The rotation mechanism rotates the holding member and the ring member about a rotation axis at rotation speeds different from each other and/or in rotational directions different from each other, the rotation axis being a vertical axis passing through the substrate held by the holding member.

Abstract: A substrate processing method is provided, which includes: a sulfuric acid immersing step of immersing a plurality of substrates in a sulfuric acid-containing liquid within a sulfuric acid vessel; a transporting step of taking out the substrates from the sulfuric acid vessel and transporting the substrates to an ozone gas treatment unit; and an ozone exposing step of exposing the substrates transported to the ozone gas treatment unit to an ozone-containing gas. The ozone gas treatment unit may include a gas treatment chamber which accommodates the substrates. The ozone exposing step may include the step of placing the substrates taken out of the sulfuric acid vessel in a treatment space within the gas treatment chamber to expose the substrates to the ozone-containing gas.

Abstract: In a chamber, first processing is performed as preliminary processing. After the first processing has been finished, the temperature in a predetermined target region in the chamber is measured with a thermographic camera. Then, whether or not to start second processing on a substrate is determined in accordance with the acquired measured temperature information. If it is determined as a result that the second processing can be started, the second processing is performed. In this case, the second processing on the substrate can be started, with the temperature of the target region in the chamber having reached its stability. Accordingly, the second processing can be performed uniformly on a plurality of substrates. That is, it is possible to reduce variations in processing caused by temperature environments in the chamber.

Abstract: An upper flow passage 181 is connected to a buffer space 182. The upper flow passage 181 has a constant cross-sectional shape and a processing fluid flows as a laminar flow in the upper flow passage 181. On the other hand, the buffer space 182 has a larger flow passage cross-sectional area than the upper flow passage 181. Thus, the processing fluid flowing in the upper flow passage 181 is released at once into the wide buffer space 182, whereby the pressure of the processing fluid decreases. A backflow of the processing fluid from the buffer space 182 to the upper flow passage 181 is prevented due to this pressure difference and the magnitude of a flow passage resistance of the upper flow passage 181 viewed from the buffer space 182.

Abstract: A substrate treating apparatus includes a carrier platform, a transport mechanism, and a controller. The carrier platform places a carrier thereon. The carrier includes a plurality of shelves arranged in an up-down direction. The shelves are each configured to place one substrate thereon in a horizontal posture. The transport mechanism is configured to transport a substrate to a carrier placed on the carrier platform. The controller controls the transport mechanism. The transport mechanism includes a hand and a hand driving unit. The hand supports a substrate. The hand driving unit moves the hand. The controller changes a height position of the hand when the hand is inserted between two of the shelves adjacent to each other in the up-down direction, depending on a shape of a substrate taken from or placed on one of the shelves by the transport mechanism.

Abstract: A substrate cleaning device includes a chamber, a first processing part and a second processing part. The chamber forms a processing space including a first processing position and a second processing position. The first processing part performs a first process on a substrate disposed at the first processing position in the chamber. The second processing part performs a second process on the substrate disposed at the second processing position in the chamber. A main robot loads and unloads the substrate with respect to the substrate cleaning device by moving a hand holding the substrate. In addition, the main robot receives the substrate disposed at the first processing position by causing the hand to enter the processing space, transporting the substrate to the second processing position, and positioning the substrate.

Abstract: The N candidate timings Tc (I) from the first one to the N-th one which are arranged in chronological order with an interval of the cycle Cs in accordance with the transport speed V of the printing medium WP are set. When the I-th candidate timing Tc (I) is set outside the prohibition interval Pw with the (I?1)th output timing Td (I?1) as the starting point timing, the I-th candidate timing Tc (I) is determined as the I-th output timing Td (I). On the other hand, when the I-th candidate timing Tc (I) is set within the prohibition interval Pw with the (I?1)th output timing Td (I?1) as the starting point timing, a timing after the prohibition interval Pw is determined as the I-th output timing Td (I).

Abstract: Authentication information is acquired from a storage medium through near field communication in one authentication device. Whether the authentication information corresponds to one substrate processing apparatus at which the authentication device is provided is determined. In a case where the authentication information corresponds to the one substrate processing apparatus, access information is transmitted from the authentication device through near field communication. An instruction terminal receives the access information through near field communication. The instruction terminal accesses a maintenance instruction device based on the access information, whereby a maintenance screen is displayed on a display of the instruction terminal. The instruction terminal has an operation unit to be operated by a user in order to provide an instruction for performing a maintenance operation.

Abstract: A printing apparatus for printing on printing media in a continuous business form. The apparatus includes a transport device, a detector for detecting a splice portion between the printing media transported by the transport device, a printing section for printing on the printing media transported by the transport device, a drying section for drying at a drying temperature the printing media printed in the printing section and transported by the transport device, and a controller for operating the transport device to reduce tension applied to the splice portion at least while the splice portion is located in the drying section.

Abstract: The measured winding diameter values Ds1(d) corresponding to the conveying distance d are measured by measuring the diameter of the printing medium M wound on the unwinding roll 71 by the diameter sensor 77. The measured winding diameter values Ds1(d) are smoothed by the low-pass filter to extract the smoothed winding diameter values Ds_avg1(d). By calculating the value of the diameter based on the initial diameter value Do1, the thickness value Tm and the conveying distance of the printing medium M, the calculated winding diameter values Dc1(d) are calculated. An operation of calculating the difference Ddiff1(d) between the calculated winding diameter value Dc1(d) and the smoothed winding diameter value Ds_avg1(d) while compensating for the delay by the low-pass filter is performed whereby the differences Ddiff1(d) are calculated. The calculated winding diameter value Dc1(d) are corrected by the differences Ddiff1(d).

Abstract: A substrate cleaning apparatus includes an upper holding device holding an outer peripheral end of a substrate, and a lower surface brush contacting a lower surface of the substrate to clean the lower surface. The lower surface brush moves from a state of being separated from the lower surface to contact a first partial region of the lower surface when cleaning of a lower surface central region of the substrate is started. Then, the lower surface brush moves into contact with the lower surface central region on the lower surface. The lower surface brush moves from a state of being in contact with the lower surface to be separated from a second partial region of the lower surface when cleaning of the lower surface central region is completed. At least one of the first partial region and the second partial region does not overlap the lower surface central region.

Abstract: A substrate cleaning apparatus includes an upper holding device holding an outer peripheral end of a substrate, and a lower surface brush contacting a lower surface of the substrate to clean the lower surface. The lower surface brush moves between a contact position where the lower surface brush contacts the lower surface of the substrate held by the upper holding device and a separation position where the lower surface brush is separated from the substrate held by the upper holding device by a certain distance. At the separation position, the lower surface brush rotates at a first rotation speed. At the contact position, the lower surface brush rotates at a second rotation speed higher than the first rotation speed at a time point when the lower surface brush contacts the lower surface and a time point when the lower surface brush is separated from the lower surface.

Abstract: A substrate processing apparatus includes: a circulation pipe which defines a circulation passage through which a chemical liquid within a chemical-liquid tank is circulated; a supply pipe which guides the chemical liquid from the circulation pipe to a chemical-liquid nozzle; a supply valve which is switched between an open state in which the chemical liquid flowing through the supply pipe toward the chemical-liquid nozzle is passed and a closed state in which the supply of the chemical liquid from the supply pipe to the chemical-liquid nozzle is stopped; a recovery pipe which guides the chemical liquid from a cup to the chemical-liquid tank; and a branch pipe which guides the chemical liquid within the circulation pipe to the recovery pipe.

Abstract: A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid.

Abstract: A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

Abstract: A substrate processing method for removing an organic film on a substrate includes a) carrying out introduction of ozone-containing gas into a substrate processing chamber to fill at least a space above the substrate in the substrate processing chamber with ozone-containing gas, b) starting spraying through the space a heated chemical liquid containing sulfuric acid onto the substrate after the a), c) continuing the spraying started in the b), and d) stopping the spraying continued in the c).

Abstract: In a substrate processing apparatus (1), above a plurality of processing parts (31) arrayed in an up-and-down direction, arranged are a plurality of collecting pipes (61a to 61c). The plurality of collecting pipes (61a to 61c) correspond to a plurality of fluid classifications, respectively. Further, provided are a plurality of exhaust pipes (4) extending upward from the plurality of processing parts (31), into which exhaust gases from the processing parts (31) flow, respectively. At an upper end portion of each of the exhaust pipes (4), provided is a flow path switching part (5) which connects the upper end portion to the plurality of collecting pipes (61a to 61c) and switches a flow path of the exhaust gas flowing in the exhaust pipe (4) among the plurality of collecting pipes (61a to 61c). In the substrate processing apparatus (1), it is possible to reduce a pressure loss in the exhaust pipe (4) and reduce a footprint.

Abstract: A substrate processing method is provided for removing a resist having a hardened layer from a front surface of a substrate. The substrate processing method includes a hardened-layer removing step and a wet processing step. The hardened-layer removing step includes a heating step of heating the substrate to 150° C. or more and an ozone-gas supplying step of supplying an ozone gas to the front surface of the substrate being heated by the heating step, and the hardened-layer removing step removes the hardened layer by generating an oxygen radical near the front surface of the substrate. The wet processing step removes the resist from the front surface of the substrate by supplying a processing liquid including a sulfuric acid to the front surface of the substrate after the hardened-layer removing step.