Abstract: A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid.
November 25, 2020
June 3, 2021
SCREEN Holdings Co., Ltd.
Katsuya AKIYAMA, Yukifumi YOSHIDA, Song ZHANG
Abstract: Dummy running is carried out which performs preheating treatment using halogen lamps and flash heating treatment using flash lamps on a dummy wafer to control the temperature of in-chamber structures including a susceptor and the like. In this process, a preheating counter or a flash heating counter is incremented each time the preheating treatment or the flash heating treatment is performed. An alarm is issued, if the preheating counter or the flash heating counter that is a wear-and-tear value of the dummy wafer is not less than a predetermined threshold value. This allows an operator of a heat treatment apparatus to recognize that the deterioration of the dummy wafer reaches a limit value, thereby preventing the erroneous treatment of a dummy wafer suffering advanced deterioration.
July 23, 2019
Date of Patent:
June 1, 2021
SCREEN HOLDINGS CO., LTD.
Tomohiro Ueno, Kazuhiko Fuse, Mao Omori
Abstract: To divide appropriately an image including cells into a plurality of types of regions in accordance with image features, the image processing method of the invention includes acquiring an original image which includes a cell which is cultured, dividing the original image into blocks each of which consists of a predetermined number of pixels and obtaining spatial frequency components that an image in each block has, classifying each of the blocks into a plurality of clusters in a multi-dimensional feature value space in which intensity of a DC component among the spatial frequency components and intensity of each of a plurality of AC components which are different in a spatial frequency from one another are regarded as feature values; and dividing the original image into a plurality of regions on the basis of a result of the classification.
Abstract: Dummy running is carried out which performs preheating treatment using halogen lamps and flash heating treatment using flash lamps on a dummy wafer to control the temperature of in-chamber structures including a susceptor and the like. In this process, a wear-and-tear value is calculated by adding up the amounts of electric power inputted to the halogen lamps or the like each time the preheating treatment or the flash heating treatment is performed. The wear-and-tear value is an indicator indicating the degree of deterioration of the dummy wafer. If the wear-and-tear value of the dummy wafer is not less than a predetermined threshold value, an alarm is issued. This allows an operator of a heat treatment apparatus to recognize that the deterioration of the dummy wafer reaches a limit value and to reliably grasp the dummy wafer suffering advanced deterioration.
July 24, 2019
Date of Patent:
June 1, 2021
SCREEN HOLDINGS CO., LTD.
Tomohiro Ueno, Kazuhiko Fuse, Mao Omori
Abstract: An image processing method includes acquiring an original image including cells as an imaging target, performing band-pass filtering on the original image with respect to a spatial frequency component within a band determined in accordance with a width of an outline of the imaging target and attenuating relatively other spatial frequency component outside the band, segmenting an image after the filtering into a first region having density higher than a threshold value and a second region, connecting the first regions sandwiching the second region by changing a portion of the sandwiched second region to the first region in an image after the segmenting, converting a closed region which is the second region in an image after the connection surrounded by the first region into the first region, and dividing the first region having, a neck into regions at a position of the neck in an image after the converting.
Abstract: A technology capable of effectively and stably correcting brightness unevenness in an image obtained by imaging is provided. An image processing method includes an image obtaining step of obtaining an original image obtained by imaging an imaging object together with a substantially uniform background, an approximation step of specifying an approximation formula for approximating a two-dimensional luminance profile of the original image to a probability density function of a two-dimensional normal distribution, and a correction step of correcting a luminance value of each pixel constituting the original image on the basis of a luminance value of the two-dimensional luminance profile expressed by the approximation formula.
Abstract: In equipment that supplies a processing liquid on a top surface of a substrate while holding the substrate horizontally in a chamber a generation status of fumes is determined. Specifically, an image of a predetermined imaging area in the chamber is captured. Then, the generation status of fumes in the chamber is determined based on luminance values of the captured image acquired by the capturing of an image. Accordingly, it is possible to quantitatively determine whether a generation status of fumes in a chamber is normal.
Abstract: A plurality of flash lamps that irradiate a semiconductor wafer with flash light are arrayed in a plane. The array of the plurality of flash lamps is divided into two zones: a central zone including a region opposed to a central portion of the semiconductor wafer to be treated, and a peripheral zone outside the central zone. During flash light irradiation, an emission time of a flash lamp belonging to the peripheral zone is set to be longer than an emission time of a flash lamp belonging to the central zone. Thus, a greater amount of flash light is applied to the peripheral portion of the semiconductor wafer, where a temperature drop is relatively likely to occur, than to the central portion thereof, thus preventing a relative temperature drop in the peripheral portion of the semiconductor wafer during flash heating.
Abstract: Prior to heat treatment of a semiconductor wafer to be treated, a dummy wafer is placed on a susceptor made of quartz, and the susceptor is preheated by irradiation with light from halogen lamps. A controller controls an output from the halogen lamps, based on the temperature of the susceptor measured with a radiation thermometer. The radiation thermometer receives infrared radiation of a wavelength longer than 4 ?m to measure the temperature of the susceptor. The radiation thermometer is able to receive only infrared radiation emitted from the susceptor to accurately measure the temperature of the susceptor, regardless of whether or not a wafer is held by the susceptor, because quartz is opaque in a wavelength range longer than 4 ?m.
Abstract: A transportation preparation operation for transporting a semiconductor wafer from a treatment chamber is started before a temperature of the semiconductor wafer decreases to a transportable temperature. A gate valve is closed after a treatment on the semiconductor wafer is started, and an operation of transporting the semiconductor wafer into the treatment chamber is completed. A period of time for treating the semiconductor wafer and a period of time for transporting the semiconductor wafer in and out are overlapped with each other, thus a time required for transporting the semiconductor wafer W into and out of the treatment chamber can be reduced.
Abstract: A substrate processing device includes a holding member for holding a substrate, and an opposed member having a body portion and an extended portion extending from at least a part of a peripheral edge part of the body portion. A protrusion is provided on one part of a tip side part of the extended portion and a side surface part of the holding member, and the other part is provided with a restricting structure disposed opposite to the protrusion and restricting relative motion of the protrusion. The relative motion between the holding member and the opposed member is restricted, and the substrate processing device further includes a rotating mechanism, and a nozzle for discharging a processing solution and the protrusion and the restricting structure are disposed below an upper surface of the holding member.
Abstract: Product recipes in which a treatment procedure and treatment conditions of heat treatment of product wafers are specified are created timely. Dummy recipes in which a treatment procedure and treatment conditions of heat treatment of dummy wafers are specified are also created. Each of the product recipes and a corresponding one of the dummy recipes are stored in association with each other. Dummy treatment of a dummy wafer starts when a controller receives an advance notice signal indicating that product wafers will arrive at a heat treatment apparatus. The dummy wafers are stored in a dummy carrier permanently installed on a load port exclusive to the dummy carrier. The dummy treatment is performed in accordance with a dummy recipe associated with a product recipe corresponding to the product wafers scheduled to arrive at the heat treatment apparatus.
Abstract: In a print control device 10, a page data correction portion 140 receives page data Dpg included in manuscript data Dd and, when the page data Dpg includes a predetermined type of barcode font with a data resolution different from a print resolution, corrects font data within barcode data while maintaining a barcode length, such that any bars and spaces included in a character represented by the barcode font have widths corresponding to natural numbers of pixels with a resolution that is a natural number multiple of the print resolution. A rasterization processing portion 160 rasterizes corrected page data with a high resolution and thereafter anti-aliases the rasterized page data, thereby generating print-resolution raster data Drs.
Abstract: In equipment that executes a drying process of forming a liquid membrane on a top surface of a substrate W which is held horizontally and gradually enlarging a dry area from which the liquid membrane has been removed, quality of the drying process is determined. Specifically, first, the top surface of the substrate is repeatedly imaged by an imaging unit during execution of the drying process. Then, it is determined whether the dry area is in a normal state based on a plurality of captured images acquired by the imaging. Accordingly, it is possible to quantitatively determine whether a dry area is in a normal state based on a plurality of captured images.
Abstract: A gallium nitride (GaN) substrate is injected with magnesium as a p-type dopant. The GaN substrate undergoes preheating through irradiation with light from halogen lamps in an atmosphere containing nitrogen and hydrogen, and further undergoes heating to a high temperature for a super-short time through irradiation with flashes of light from flash lamps. Heating the GaN substrate in the atmosphere containing nitrogen and hydrogen complements removed nitrogen, thus preventing nitrogen shortage. Such a heating process also enables heat treatment while supplying hydrogen to the GaN substrate. The heating process further enables crystal defects in the GaN substrate to be recovered. With these effects, the p-type dopant injected into the GaN substrate is activated with high efficiency.
Abstract: An outer peripheral end of a substrate is held with a plurality of chuck pins provided at a spin plate abutting against a plurality of portions of the outer peripheral end of the substrate, and the spin plate is rotated about a rotation axis. A cleaning head is moved by a head moving mechanism while being pressed against a back surface of the substrate held by the plurality of chuck pins by the head moving mechanism, and foreign matter on the back surface of the substrate is removed by polishing with the cleaning head. A reaction force against a load applied to the back surface of the substrate by the cleaning head is generated in the substrate by auxiliary pins. Alternatively, the back surface of the substrate, which has been cleaned or is being cleaned by the cleaning head, is further cleaned by a cleaning brush.
Abstract: A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered.
Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.
Abstract: A liquid film of a processing liquid containing at least one of sulfuric acid, a sulfate, peroxosulfuric acid, and a peroxosulfate, or a processing liquid containing hydrogen peroxide is formed on a substrate. A plasma is radiated to the liquid film. Thereby, a substrate processing method in which substrate processing using an oxidizing power of the processing liquid can be efficiently performed is provided.
Abstract: The present application discloses an inkjet printing device in which a nozzle that caused a print defect, such as an ejection failure, is reliably identified by a simple process even when an end of a test pattern is not recorded. In a configuration example of the inkjet printing device, a test pattern TPat to be printed for identifying a recording head nozzle that caused a print defect consists of an ejection failure detection pattern DPat and a position detection pattern PPat. The position detection pattern PPat consists of a position mark PM4 and pairs of position marks (PM1 and PM1; PM2 and PM2; and PM3 and PM3) symmetrically arranged with respect to the position mark PM4 in a sheet width direction. Each position mark consists of three linear patterns having the same length and disposed at equal intervals. Moreover, the position detection pattern PPat is configured such that linear pattern length decreases with increasing distance from a center position mark.