Abstract: When an insulated gate bipolar transistor is incorporated in a drive circuit of a flash lamp, so that a light emission pattern of the flash lamp is freely defined, a temperature change pattern of a surface of a semiconductor wafer that receives the emission of flash light can be adjusted. The length of diffusion of impurities can be controlled by rising a surface temperature of the semiconductor wafer from a preheating temperature to a diffusion temperature through emission of flash light and maintaining the surface temperature at the diffusion temperature for a time period not shorter than 1 millisecond and not longer than 10 milliseconds. Subsequently, the impurities can be activated by rising the surface temperature of the semiconductor wafer from the diffusion temperature to an activation temperature.
Abstract: A substrate processing apparatus includes a processing unit supplying at least one of a plurality of types of chemical liquids to a substrate and a scrubber cleaning an exhaust by bringing the exhaust in contact with a scrubbing liquid. The scrubber includes an exhaust passage that guides the exhaust, generated at the processing unit and containing the chemical liquid, toward an exhaust equipment disposed outside the substrate processing apparatus and a discharger that is able to discharge each of a plurality of types of scrubbing liquids that clean the exhaust individually inside the exhaust passage. A controller selects any one of the plurality of types of scrubbing liquids based on the type of chemical liquid contained in the exhaust and makes the selected scrubbing liquid be discharged from the discharger.
Abstract: In a state where an ammonia atmosphere is formed in a chamber for housing a semiconductor wafer, heating treatment is applied to the semiconductor wafer by emitting a flash of light to a front surface of the substrate using a flash lamp. When the semiconductor wafer cracks during flash heating, supplying gas into the chamber as well as exhausting gas therefrom is temporarily stopped. Then, gas in the chamber is exhausted at an exhaust flow rate smaller than a steady exhaust flow rate. The steady exhaust flow rate is an exhaust flow rate when heating treatment is applied to a semiconductor wafer. This enables ammonia in the chamber to be discharged by exhausting gas in the chamber while preventing fragments of the semiconductor wafer from being caught in the vacuum pump.
Abstract: Vacuum ultraviolet rays are emitted to a surface to be processed of a substrate to be processed by a light source. During an emission period in which the vacuum ultraviolet rays are emitted from the light source to the substrate, part of the vacuum ultraviolet rays is received by an illuminometer, and illuminance of the received vacuum ultraviolet rays is measured. A light receiving surface of the illuminometer is located at a constant height that is based on the surface to be processed of the substrate during the emission period of the vacuum ultraviolet rays. An exposure amount of the substrate is calculated based on the illuminance measured by the illuminometer. Emission of the vacuum ultraviolet rays from the light source to the substrate is stopped based on the calculated exposure amount of the substrate.
Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.
June 14, 2016
Date of Patent:
October 8, 2019
SCREEN Holdings Co., Ltd.
Rei Takeaki, Koji Ando, Tadashi Maegawa, Yosuke Yasutake
Abstract: A substrate having a surface on which a resist film is formed and that has undergone pattern exposure processing and development processing is conveyed into a chamber and held by a holding plate. The surface of the substrate W held by the holding plate is irradiated with flash light emitted from flash lamps. The spectral distribution of the flash light has a peak in a wavelength range of 200 nm to 300 nm. The spectral distribution of the flash light also shows that the relative intensity at a wavelength of 300 nm is 20% or more higher than that at a wavelength of 500 nm. Since the resist film absorbs ultraviolet rays, the resist film can be selectively heated by irradiating the resist film with flash light that includes a large number of wavelength components in the ultraviolet region.
Abstract: A printing apparatus for printing on an elongate printing medium includes the following elements: a transport mechanism for transporting the printing medium; a printing unit including a plurality of print heads arranged at intervals in a transport direction; a detecting unit including at least three detectors arranged as spaced from one another for detecting positions in a width direction of the printing medium; a variation history acquirer for deriving, for each detection cycle, a function approximate curve based on positions of the same location in the transport direction of the printing medium detected by the respective detectors, and acquiring from each function approximate curve, and as a variation history, a deviation amount in the width direction in each of the printing positions; a predicted position calculator for calculating, from the variation history, a predicted position in the width direction for each of the printing position; and a printing controller for printing while correcting the position
Abstract: First, shading charts are printed on a surface of a recording medium. Then, a plurality of captured images is acquired for a region of the same density of the shading charts printed on the recording medium. At this time, the amounts of displacement in the position of the recording medium in the main scanning direction, which is the direction of arrangement of nozzles, are also detected. Then, one super-resolution image with a higher resolution than the captured images is generated on the basis of the captured images and the amounts of displacement in the position of the recording medium in the main scanning direction. Thereafter, a variable-density correction amount is calculated for each of the nozzles on the basis of the generated super-resolution image.
Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.
Abstract: A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.
Abstract: An upper end of a tubular member surrounding a common pipe line is closed by a lid member. The lid member has an opening formed therein for supplying liquids to adjacent the rotation center on the back surface of a wafer. Deionized water supplied at normal temperature to the interior of the tubular member, after serving to cool the common pipe line, flows out of a lower end of the tubular member.
Abstract: Force for biasing a roller member is changed according to the contact state of first and second plate-like bodies during the travel of the roller member. By that, the pressing force per unit area given from the second plate-like body to the first plate-like body during travel is suppressed. An object to be transferred is satisfactorily transferred despite a change in the contact state of the plate-like bodies during the travel of the roller member.
Abstract: A substrate processing apparatus has a base part facing a surface of a rotation table, and the base part is equipped with a plate member which is rotated by a rotation drive unit together with the rotation table while the base member is being disposed between the rotation table and a substrate W held by a plurality of substrate holding members. The substrate processing apparatus is further equipped with: a heating fluid supply unit and a cooling fluid supply unit each of which is provided between the rotation table and the plate member and supplies a temperature regulating fluid for temperature regulation of the plate member; and a controller which controls supply of the temperature regulating fluids from the heating fluid supply unit and the cooling fluid supply unit.
Abstract: An editing device generates a first public key and a first private key, receives a manuscript data encrypted using the first public key from an ordering device, and decrypts the encrypted manuscript data using the first private key. The editing device generates, based on the manuscript data, print data encrypted using a second public key generated in a RIP processing device, and deletes the first private key after finishing execution of a job. Using a third public key, the editing device encrypts a log which shows an execution process of the job, the log including information that a finish processing has been executed. The editing device may store the first private key before starting execution of the job, and may control whether the job is to be executed, based on a job ID received from the ordering device.
Abstract: A plate-like base of a substrate holder has an upper surface perpendicular to a central axis. A supporter is disposed circumferentially around the central part of the base and protrudes upward from the upper surface of the base to support the lower surface of a substrate. A flexible seal is disposed around the entire periphery of the supporter. An upper edge portion of the seal is located above the supporter. When the substrate holder adsorbs a substrate, gas present between the base and the substrate is sucked through a suction port with the upper edge portion of the seal being in contact with the lower surface of the substrate. This allows the substrate to approach the base and come in contact with the supporter while making the seal bend down. As a result, even if there is a warp in a substrate, the substrate can be held suitably.
Abstract: A scheduling method includes a first step where a controller prepares the schedule so that a preliminary processing process and a substrate processing process are performed in that order by a processing unit in common, a second step where, when an abnormality occurs in a substrate processing apparatus in a period from the start of the preliminary processing process to before the start of the substrate processing process, the controller stops the substrate processing process at the processing unit designated in the first step, and a third step where, when the abnormality is resolved, the controller prepares the schedule so that a post-resolution preliminary processing process and the substrate processing process are performed in that order at the processing unit designated in the first step.
Abstract: This invention is to provide a technique capable of detecting a displacement of a positioning object with respect to a reference position in an actual space with high accuracy. A position of an imaging object detected in an imaged image is converted into a displacement of the positioning object with respect to the reference position in the actual space based on conversion information representing a correlative relationship between the position of the imaging object in the image and the displacement of the positioning object from the reference position. The conversion information is determined in advance based on positions of the imaging object detected from a plurality of images respectively imaged with the positioning object positioned at each of a plurality of imaging positions.
Abstract: This application discloses a print control device suppressing paper waste without reducing the size of a print sheet that is to form a section upon printing for bookbinding. In one configuration example of the print control device, the numbers Np1 and Np2 of first and second print sheets to be used, which correspond to two pieces of imposition information Dfly1 and Dfly2 prepared for manuscript data Dd for a single print job, are determined so as not to waste paper, on the basis of the numbers of pages imposed on the first and second print sheets and a total page number Npg in the manuscript data Dd. On the basis of the determined numbers Np1 and Np2 and the two pieces of imposition information Dfly1 and Dfly2, overall imposition for the manuscript data Dd is determined such that, of the first and second print sheets, the shorter print sheets are sandwiched between the longer print sheets.
Abstract: An atmosphere in a processing chamber in which a substrate is stored is discharged by a suction device. At a time point at which oxygen concentration in the processing chamber is lowered to predetermined exposure starting concentration, emission of vacuum ultraviolet rays from a light source to the substrate is started. The emission of the vacuum ultraviolet rays to the substrate is stopped at a time point at which the exposure amount of the substrate increases to a predetermined set exposure amount. The exposure starting concentration is defined in advance to be higher than 1% and lower than oxygen concentration in the air, and is defined in advance such that ozone generated from oxygen atoms by the emission of the vacuum ultraviolet rays do not damage the film on the surface to be processed of the substrate.
Abstract: A system, including a structured illumination stage to provide a spatially modulated imaging field is provided. The system further includes a spatial frequency modulation stage to adjust the frequency of the spatially modulated imaging field, a sample interface stage to direct the spatially modulated imaging field to a sample, and a sensor configured to receive a plurality of fluorescence emission signals from the sample. The system also includes a processor configured to reduce a sample scattering signal and to provide a fluorescence emission signal from a portion of the sample including the spatially modulated imaging field. A method for using the above system to form an image of the sample is also provided.
December 15, 2017
Date of Patent:
September 3, 2019
SCREEN HOLDINGS, CO., LTD., THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
Joseph Russell Landry, Ryosuke Itoh, Michael J. Mandella, Olav Solgaard