Abstract: A transportation preparation operation for transporting a semiconductor wafer from a treatment chamber is started before a temperature of the semiconductor wafer decreases to a transportable temperature. A gate valve is closed after a treatment on the semiconductor wafer is started, and an operation of transporting the semiconductor wafer into the treatment chamber is completed. A period of time for treating the semiconductor wafer and a period of time for transporting the semiconductor wafer in and out are overlapped with each other, thus a time required for transporting the semiconductor wafer W into and out of the treatment chamber can be reduced.
Abstract: A substrate processing device includes a holding member for holding a substrate, and an opposed member having a body portion and an extended portion extending from at least a part of a peripheral edge part of the body portion. A protrusion is provided on one part of a tip side part of the extended portion and a side surface part of the holding member, and the other part is provided with a restricting structure disposed opposite to the protrusion and restricting relative motion of the protrusion. The relative motion between the holding member and the opposed member is restricted, and the substrate processing device further includes a rotating mechanism, and a nozzle for discharging a processing solution and the protrusion and the restricting structure are disposed below an upper surface of the holding member.
Abstract: In a print control device 10, a page data correction portion 140 receives page data Dpg included in manuscript data Dd and, when the page data Dpg includes a predetermined type of barcode font with a data resolution different from a print resolution, corrects font data within barcode data while maintaining a barcode length, such that any bars and spaces included in a character represented by the barcode font have widths corresponding to natural numbers of pixels with a resolution that is a natural number multiple of the print resolution. A rasterization processing portion 160 rasterizes corrected page data with a high resolution and thereafter anti-aliases the rasterized page data, thereby generating print-resolution raster data Drs.
Abstract: A gallium nitride (GaN) substrate is injected with magnesium as a p-type dopant. The GaN substrate undergoes preheating through irradiation with light from halogen lamps in an atmosphere containing nitrogen and hydrogen, and further undergoes heating to a high temperature for a super-short time through irradiation with flashes of light from flash lamps. Heating the GaN substrate in the atmosphere containing nitrogen and hydrogen complements removed nitrogen, thus preventing nitrogen shortage. Such a heating process also enables heat treatment while supplying hydrogen to the GaN substrate. The heating process further enables crystal defects in the GaN substrate to be recovered. With these effects, the p-type dopant injected into the GaN substrate is activated with high efficiency.
Abstract: In equipment that executes a drying process of forming a liquid membrane on a top surface of a substrate W which is held horizontally and gradually enlarging a dry area from which the liquid membrane has been removed, quality of the drying process is determined. Specifically, first, the top surface of the substrate is repeatedly imaged by an imaging unit during execution of the drying process. Then, it is determined whether the dry area is in a normal state based on a plurality of captured images acquired by the imaging. Accordingly, it is possible to quantitatively determine whether a dry area is in a normal state based on a plurality of captured images.
Abstract: An outer peripheral end of a substrate is held with a plurality of chuck pins provided at a spin plate abutting against a plurality of portions of the outer peripheral end of the substrate, and the spin plate is rotated about a rotation axis. A cleaning head is moved by a head moving mechanism while being pressed against a back surface of the substrate held by the plurality of chuck pins by the head moving mechanism, and foreign matter on the back surface of the substrate is removed by polishing with the cleaning head. A reaction force against a load applied to the back surface of the substrate by the cleaning head is generated in the substrate by auxiliary pins. Alternatively, the back surface of the substrate, which has been cleaned or is being cleaned by the cleaning head, is further cleaned by a cleaning brush.
Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.
Abstract: A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered.
Abstract: A liquid film of a processing liquid containing at least one of sulfuric acid, a sulfate, peroxosulfuric acid, and a peroxosulfate, or a processing liquid containing hydrogen peroxide is formed on a substrate. A plasma is radiated to the liquid film. Thereby, a substrate processing method in which substrate processing using an oxidizing power of the processing liquid can be efficiently performed is provided.
Abstract: A workpiece having an outer peripheral portion rotationally symmetric about a symmetry axis can be inspected with high-accuracy while reducing cycle time of the inspection. In an inspection for each of the workpieces, on the basis of the image of the workpiece acquired by executing a first step of capturing an image of the workpiece while holding the workpiece at a pre-alignment position using a holding table and rotating the workpiece about a rotary axis, a position of the workpiece at the holding table is corrected so as to eliminate misalignment of the symmetry axis with respect to the rotary axis. Thereafter, on the basis of the image acquired by executing a fifth step of capturing an image of the workpiece while rotating the workpiece about the rotary axis at an inspection position, the workpiece is inspected. In the inspection of the workpiece, the fifth step for a previous workpiece of two consecutive workpieces and the first step for a next workpiece are executed in parallel with each other.
Abstract: The present application discloses an inkjet printing device in which a nozzle that caused a print defect, such as an ejection failure, is reliably identified by a simple process even when an end of a test pattern is not recorded. In a configuration example of the inkjet printing device, a test pattern TPat to be printed for identifying a recording head nozzle that caused a print defect consists of an ejection failure detection pattern DPat and a position detection pattern PPat. The position detection pattern PPat consists of a position mark PM4 and pairs of position marks (PM1 and PM1; PM2 and PM2; and PM3 and PM3) symmetrically arranged with respect to the position mark PM4 in a sheet width direction. Each position mark consists of three linear patterns having the same length and disposed at equal intervals. Moreover, the position detection pattern PPat is configured such that linear pattern length decreases with increasing distance from a center position mark.
Abstract: A ring support is attached to an inner wall surface of a chamber that houses a semiconductor wafer to support a susceptor. When the semiconductor wafer is placed on the susceptor, an inner space of the chamber is separated into an upper space and a lower space. Particles are likely to accumulate on a lower chamber window as a floor part of the chamber. However, since the upper space and the lower space are separated, the semiconductor wafer can be prevented from being contaminated by the particles flowing into the upper space and adhering to a surface of the semiconductor wafer even when the particles on the lower chamber window are blown up by irradiation with flash light.
Abstract: A displacement amount calculation part in a base material processing apparatus calculates the degree of matching between an upstream data section and a downstream data section included in an upstream and a downstream detection results, which indicate time-varying changes in the positions of an edge of the base material in the width direction at an upstream and a downstream detection positions. This calculation uses the results of comparison between signals in a predetermined frequency band extracted from the upstream detection result and signals in the predetermined frequency band extracted from the downstream detection result. Accordingly, a downstream data section that is highly matched with the upstream data section can be identified with high accuracy, and the amount of displacement of the base material in the transport direction can be detected with high accuracy on the basis of an identification result.
Abstract: An optical scanner including micro-electromechanical system phased-arrays suitable for use in a LiDAR system, and methods of operating the same are described. Generally, the scanner includes an optical transmitter having first phased-arrays to receive light from a light source, form a swath of illumination in a far field scene and to modulate phases of the light to sweep or steer the swath over the scene in two-dimensions (2D). An optical receiver in the scanner includes second phased-arrays to receive light from the far field scene and direct at least some of the light onto a detector. The second phased-arrays are configured to de-scan the received light by directing light reflected from the far field scene onto the detector while rejecting background light. In one embodiment the second phased-arrays direct light from a slice of the far field scene onto a 1D detector array.
August 24, 2020
March 11, 2021
SCREEN HOLDINGS CO., LTD.
Yuki Ashida, Stephen Hamann, Olav Solgaard, Alexander Payne, Lars Eng, James Hunter
Abstract: A first imaging unit images a first region to be subjected to mirror finish treatment of an inspection region of a surface of the object. A second imaging unit images a second region not to be subjected to the mirror finish treatment of the inspection region of the surface of the object. An inspection unit inspects a form of the first region based on a first picked-up image taken by the first imaging unit, and a form of the second region based on a second picked-up image taken by the second imaging unit. During imaging, a holder holds the object so as to have a positional relationship in which the first region has a normal along a first direction rather than a second direction.
Abstract: An object of the invention is to provide an image processing technique for generating an all-in-focus image with less distortion from images obtained by imaging an imaging object carried together with a liquid in a well at different focus positions. An image processing method of the invention includes obtaining a plurality of images captured by imaging an imaging object carried together with a liquid in a well with a focus position changed in a direction substantially perpendicular to a liquid surface, calculating a local movement amount between the plurality of images, determining a correlation between a distance from a center of the well and an image distortion amount based on the local movement amount, and synthesizing the plurality of images by correcting pixels in each image based on the correlation and generating an all-in-focus image.
Abstract: A displacement amount calculation part in a base material processing apparatus calculates the degree of matching between an upstream data section and a downstream data section included in a first and a second detection results, which indicate time-varying changes in the positions of an edge of a base material in the width direction at an upstream and a downstream detection positions. This calculation uses calculation results obtained by sequentially calculating the degrees of matching between sub-data sections in the upstream data section and downstream sub-data sections in the downstream data section. This reduces the amount of computation and enables highly accurate detection of the amount of displacement of the base material in the transport direction on the basis of an identification result of the downstream data section that is highly matched with the upstream data section.
Abstract: A substrate treatment apparatus is provided with a plurality of substrate treatment parts and a liquid treatment system. The substrate treatment part has a substrate retaining part, which retains a substrate, and a discharge nozzle, which discharges a treatment liquid to the substrate retained by the substrate retaining part. The liquid treatment system has: a storage tank that stores in the treatment liquid; a supply piping part that is connected to the storage tank and forms a supply passage through which the treatment liquid to be supplied to the discharge nozzle passes; a return piping part that is connected to the storage tank and forms a return passage that returns the treatment liquid passed through the supply piping part to the storage tank; and a gas supply part that supplies a nitrogen gas different from oxygen dissolved in the treatment liquid into the return passage of the return piping part.
Abstract: TMAH, hydrogen peroxide and water are mixed to make alkaline etching liquid containing TMAH, the hydrogen peroxide and the water and not containing hydrogen fluoride compound. The etching liquid is supplied to a substrate on which a polysilicon film and a silicon oxide film are exposed, thereby etching the polysilicon film while inhibiting etching the silicon oxide film.
Abstract: Heating treatment is performed on a semiconductor wafer in an ammonia atmosphere formed in a chamber by light irradiation from halogen lamps and flash lamps. For the formation of the ammonia atmosphere in the chamber, pressure in the chamber is once reduced. The pressure in the chamber is also reduced after the heating treatment of the semiconductor wafer. Light irradiation from the halogen lamps is performed to heat the atmosphere in the chamber before the pressure in the chamber is reduced by exhausting the atmosphere from the chamber. The heating of the atmosphere in the chamber before the pressure reduction activates the thermal motion of gas molecules in the atmosphere and decreases a gas density. As a result, the gas molecules in the chamber are discharged rapidly during the pressure reduction, so that the pressure in the chamber is reduced to a predetermined pressure in a short time.